High frequency switching devices
Switching devices using various circuits of electronic or mechanical elements depending on the operating conditions and purpose of the switching were investigated and their uses are discussed.
Prigoda, B. A.↗
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Automatic channel switching device
Automatic channel switching device operates with all three triple modular redundant channels when there are no errors. When a failure occurs, channel and module switching isolate the failure to a specific channel. Since only one must operate correctly, reliability is increased.
Ball, M.↗
Electrical switching device Patent
Electrical switching device comprising conductive liquid confined within square loop of deformable nonconductive tubing also used for leveling
Edman, C. W.↗
Photonic Switching Devices Using Light Bullets
A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.
Goorjian, Peter M.↗
Photonic Switching Devices Using Light Bullets
The present invention is directed toward a unique ultra-fast, all-optical switching device or switch made with readily available, relatively inexpensive, highly nonlinear photonic glasses. These photonic glasses have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counterpropagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide, and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. One advantage presented by the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another feature of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in highly nonlinear glasses.
Goorjian, Peter M.↗
Investigation of design of high voltage, high current solid state switching devices Final technical report
High voltage, high current switching devices using semiconductor controlled rectifiers
Graf, E. R.↗
Power Switching Device
The MOS-Controlled Thyristor is a new type of power switching device for faster and more efficient control and management of power electronics. It enables power electronic switching at frequencies of 50 to 100 thousand times a second with much lower power losses than other semiconductor devices. Advantages include electric power savings and smaller space. The device is used in motor and power controllers, AC & DC motor drives and induction heating. Early development was supported by Lewis Research Center (LEW) and other agencies. General Electric''s power semiconductor operation, the initial NASA contractor, was later purchased by Harris Semiconductor.
Source record↗
A wide-band wattmeter for the measurement and analysis of power dissipation in semiconductor switching devices
Wideband wattmeter for measurement and analysis of power dissipation in semiconductor switching devices, considering occurrence of peaks, frequency dependency of average dissipation, etc
Schwarz, F. C.↗
Electronic Rectification and Ballistic Switching Devices with Carbon Nanotube Y-Junctions
Viewgraphs of electronic rectification and ballistic switching devices with Carbon Nanotube Y-Junctions are presented.
Srivastava, Deepak↗
A new planar injection-gated bulk switching device based upon deep impurity trapping
Under the proper conditions, double-injection (DI) diodes with partially compensated deep impurities will exhibit 'S'-type switching characteristics similar to conventional silicon-controlled rectifiers (SCR's). A practical injection-gating scheme has been achieved for the first time in a planar configuration to control the switching behavior of these devices, marked by extreme sensitivity of the gate over a range of switching voltages. An experiment to demonstrate the feasibility of these devices for practical application is described. Finally, a phenomenological explanation is presented for the gate-controlled switching of these devices.
Kapoor, A. K.↗
Cascaded transformerless DC-DC voltage amplifier with optically isolated switching devices
A very high voltage amplifier is provided in which plural cascaded banks of capacitors are switched by optically isolated control switches so as to be charged in parallel from the preceding stage or capacitor bank and to discharge in series to the succeeding stage or capacitor bank in alternating control cycles. The optically isolated control switches are controlled by a logic controller whose power supply is virtually immune to interference from the very high voltage output of the amplifier by the optical isolation provided by the switches, so that a very high voltage amplification ratio may be attained using many capacitor banks in cascade.
Sridharan, Govind↗
Double-throw microwave device switches two lines quickly
By combining a single-throw microwave switch with a microwave circulator in a circuit, two input lines can be switched quickly. There is only a brief transition time when both /or neither/ of the two lines are connected to an output line.
Clauss, R.↗
Development of mathematical models for solid state switching devices
Models are developed for two types of remote power controllers (RPC). The models give the equations for the currents and voltages for all elements of passive loads as a function of time for both turn-on and turn-off. It is shown that the RPC can be considered as a combination of current and voltage sources. Equations are given for these sources which are essentially independent of the load being turned on and off. Experimental results are given for several types of loads and comparisons are made with the results obtained using the models.
Raburn, W. D.↗
Hall-effect toggle switch
Device performs same switching functions as mechanical switches, occupies same or less panel space, requires only one power source (which is compatible with the load), and operates under severe conditions of temperature, vibration, and shock.
Chevalier, S. A.↗
High Temperature Gas-Gap Thermal Switch
Device set to allow heat to flow across gap (switch "on") or decrease rate of transfer of heat to relatively low value (switch "off"). Operates at temperatures in approximate range of 100 to 1,500 degree C. Central cylindrical object thermally connected to (or disconnected from) environment by filling gap between inner and outer sleeves of switch (or evacuating gap) to increase (or decrease) thermal conduction across gap.
Bard, Steven↗
Kilovolt dc solid state remote power controller development
The experience gained in developing and applying solid state power controller (SSPC) technology at high voltage dc (HVDC) potentials and power levels of up to 25 kilowatts is summarized. The HVDC switching devices, power switching concepts, drive circuits, and very fast acting overcurrent protection circuits were analyzed. A 25A bipolar breadboard with Darlington connected switching transistor was built. Fault testing at 900 volts was included. A bipolar transistor packaged breadboard design was developed. Power MOSFET remote power controller (RPC) was designed.
Mitchell, J. T.↗
Silicon Carbide Solar Cells Investigated
The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.
Bailey, Sheila G.↗
Apparatus for Controlling Low Power Voltages in Space Based Processing Systems
A low power voltage control circuit for use in space missions includes a switching device coupled between an input voltage and an output voltage. The switching device includes a control input coupled to an enable signal, wherein the control input is configured to selectively turn the output voltage on or off based at least in part on the enable signal. A current monitoring circuit is coupled to the output voltage and configured to produce a trip signal, wherein the trip signal is active when a load current flowing through the switching device is determined to exceed a predetermined threshold and is inactive otherwise. The power voltage control circuit is constructed of space qualified components.
Petrick, David J.↗