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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

Development and Testing of a Variable Conductance Thermal Acquisition, Transport, and Switching System

This paper describes the development and testing of a scalable thermal control architecture for instruments, subsystems, or systems that must operate in severe space environments with wide variations in sink temperature. The architecture is comprised by linking one or more hot-side variable conductance heat pipes (VCHPs) in series with one or more cold-side loop heat pipes (LHPs). The VCHPs provide wide area heat acquisition, limited distance thermal transport, modest against gravity pumping, concentrated LHP startup heating, and high switching ratio variable conductance operation. The LHPs provide localized heat acquisition, long distance thermal transport, significant against gravity pumping, and high switching ratio variable conductance operation. Combining two variable conductance devices in series ensures very high switching ratio isolation from severe environments like the Earth's moon, where each lunar day spans 15 Earth days (270 K sink, with a surface-shielded/space viewing radiator) and each lunar night spans 15 Earth days (80-100 K radiative sink, depending on location). The single VCHP-single LHP system described herein was developed to maintain thermal control of International Lunar Network (ILN) anchor node lander electronics, but it is also applicable to other variable heat rejection space missions in severe environments. The LHPVCHP system utilizes a stainless steel wire mesh wick ammonia VCHP, a Teflon wick propylene LHP, a pair of one-third square meter high  radiators (one capillary-pumped horizontal radiator and a second gravity-fed vertical radiator), a half-meter of transport distance, and a wick-bearing co-located flow regulator (CLFR) to allow operation with a hot (deactivated) radiator. The VCHP was designed with a small reservoir formed by extending the length of its stainless steel heat pipe tubing. The system was able to provide end-to-end switching ratios of 300-500 during thermal vacuum testing at ATK, including 3-5 W/K ON conductance and 0.01 W/K OFF conductance. The test results described herein also include an in-depth analysis of VCHP condenser performance to explain VCHP switching operation in detail. Future multi-VCHP/multi-LHP thermal management system concepts that provide scalability to higher powers/longer transport lengths are also discussed in the paper.

Bugby, D. C.↗
DOE OSTI2025

Origin of large variations of current on/off ratio and switching voltage in atomically thin memristors: an exascale ab initio transport study

Nonvolatile resistive switching in two-dimensional monolayers opens a new avenue for high-density memory/computing devices. However, questions remain as to why the current on/off ratio and switching voltage vary significantly among different devices. Here, we simulate electronic transport of large systems consisting of a h-BN monolayer sandwiched by gold electrodes, enabled by an implementation of the nonequilibrium Green’s function method in the exascale density functional theory (DFT) code: Real-space MultiGrid. Systematic calculations reveal that the wide range of on/off ratios is due to variations in interface distances between the electrode and h-BN that significantly modulate their wavefunction overlap. In addition, DFT calculations demonstrate that the energy barrier of a gold atom dissociating from the electrode to h-BN increases dramatically with the interface distance, thereby explaining the strong dependence of the switching voltage on distance. Our work demonstrates the significance of interface distance in governing the current on/off ratio and switching voltage.

Electronic devices↗
NASA NTRS2013

Development and Testing of a Variable Conductance Thermal Acquisition, Transport, and Switching System

This paper describes the development and testing of a scalable thermal management architecture for instruments, subsystems, or systems that must operate in severe space environments with wide variations in sink temperature. The architecture involves a serial linkage of one or more hot-side variable conductance heat pipes (VCHPs) to one or more cold-side loop heat pipes (LHPs). The VCHPs provide wide area heat acquisition, limited distance thermal transport, modest against gravity pumping, concentrated LHP startup heating, and high switching ratio variable conductance operation. The LHPs provide localized heat acquisition, long distance thermal transport, significant against gravity pumping, and high switching ratio variable conductance operation. The single-VCHP, single-LHP system described herein was developed to maintain thermal control of a small robotic lunar lander throughout the lunar day-night thermal cycle. It is also applicable to other variable heat rejection space missions in severe environments. Operationally, despite a 60-70% gas blocked VCHP condenser during ON testing, the system was still able to provide 2-4 W/K ON conductance, 0.01 W/K OFF conductance, and an end-to-end switching ratio of 200-400. The paper provides a detailed analysis of VCHP condenser performance, which quantified the gas blockage situation. Future multi-VCHP/multi-LHP thermal management system concepts that provide power/transport length scalability are also discussed.

Bugby, David C.↗
NASA NTRS2003

Design and Test of Passively Operated Heat Switches for 0.2 to 15 K

Heat switches have many uses in cryogenics, from regulating heat flow between refrigeration stages to thermally isolating components once they have cooled to low temperature. Among the techniques one can use for thermal switching, the gas-gap technique has the advantages of wide operating temperature range, high switching ratio, and no moving parts. The traditional gas-gap switch uses copper conductors separated by a small gap and an external getter. The switch is activated by heating and cooling the getter by moving gas into and out of the gap, turning the switch on and off. We have designed, built and tested heat switches that use an internal getter to passively turn off at temperatures between 0.2 and 15 K. The getter is thermally anchored to one side of the switch, and when that side of the switch cools through a transition region, gas adsorbs onto the getter and the switch turns off. The challenges are to make the transition region very narrow and tailorable to a wide range of applications, and to achieve high gas conductance when the switch is on. We have made switches using He-3, He-4, hydrogen, and neon gas, and have used charcoal and various metal substrates as getters. Switching ratios range from 1000 to over 10,000. Design and performance of these switches will be discussed in detail.

DiPirro, M. J.↗
DOE OSTI2023

Ferroelectric Domain Wall Engineering Enables Thermal Modulation in PMN–PT Single Crystals

Acting like thermal resistances, ferroelectric domain walls can be manipulated to realize dynamic modulation of thermal conductivity ( k ), which is essential for developing novel phononic circuits. Despite the interest, little attention has been paid to achieving room-temperature thermal modulation in bulk materials due to challenges in obtaining a high thermal conductivity switching ratio ( k high / k low ), particularly in commercially viable materials. Here, room-temperature thermal modulation in 2.5 mm-thick Pb(Mg 1/3 Nb 2/3 )O 3 – x PbTiO 3 (PMN– x PT) single crystals is demonstrated. With the use of advanced poling conditions, assisted by the systematic study on composition and orientation dependence of PMN– x PT, a range of thermal conductivity switching ratios with a maximum of ≈1.27 is observed. Further, simultaneous measurements of piezoelectric coefficient (d 33 ) to characterize the poling state, domain wall density using polarized light microscopy (PLM), and birefringence change using quantitative PLM reveal that compared to the unpoled state, the domain wall density at intermediate poling states (0< d 33 33,max ) is lower due to the enlargement in domain size. At optimized poling conditions (d 33,max ), the domain sizes show increased inhomogeneity that leads to enhancement in the domain wall density. This work highlights the potential of commercially available PMN– x PT single crystals among other relaxor-ferroelectrics for achieving temperature control in solid-state devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Demonstration and characterization of insertable passive thermal switches for dynamic building envelopes

A dynamic building envelope integrated with thermal energy storage, such as phase change material (PCM), is an emerging technology that offers a promising solution to improve the energy efficiency of buildings. This study reports the development of insertable thermal switches, which modulate thermal resistance, thereby making building envelopes dynamic and enhancing the use of free ambient heating and cooling. The reported thermal switches are passive, meaning they work solely based on indoor and outdoor temperatures. A single switch when inserted into 10 × 10-in (0.064-m 2 ) XPS foam board insulation demonstrates effective thermal conductivity of 0.050 W/m-K in the resistive state and 0.285 W/m-K in the conductive state. Thermal switches exhibit an effective switching ratio of 5.7, with no noticeable degradation in performance over 770 cycles. Additionally, when integrated into a wall sample containing a PCM layer, switches significantly reduce the PCM solidification time by 43.2% during the cooling process.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS2014

Heat Switches for ADRs

Heat switches are key elements in the cyclic operation of Adiabatic Demagnetization Refrigerators (ADRs). Several of the types of heat switches that have been used for ADRs are described in this paper. Key elements in selection and design of these switches include not only ON/OFF switching ratio, but also method of actuation, size, weight, and structural soundness. Some of the trade-off are detailed in this paper.

adiabatic demagnetization refrigerator↗
DOE OSTI2023

Bio-Based Phase Change Materials (PCMs) for Thermal Energy Storage (Final Scientific/Technical Report)

The goal of this project is to develop a novel bio-based phase change material (PCM) derived from squid ring teeth (SRT) proteins, and design a prototype heat exchanger based on these bio-based PCMs for energy storage and dynamic heat exchange for building thermal energy storage systems. The PCMs, derived from SRT proteins, will demonstrate room temperature energy storage capacities and switchable thermal conductivities that redefine the current state-of-the-art (SOA) for building thermal energy storage. Further, in a single material and with a single manufacturing processes, our proposed thermal battery will be developed with “on demand” thermal conductivity for rapid charging/discharging but superior insulation during energy storage periods. More specifically, our bio-based PCMs have demonstrated: 1) the potential for increased energy storage capacity (i.e., greater than paraffines at room temperature); 2) tunability in thermal conductivity with the largest thermal conductivity switching ratios for an intrinsic material reported to date, and 3) a 100% recyclable and biodegradable PCM with low volatility and toxicity and scalability in its manufacture for both residential and commercial applications. The already established ability for roll-to-roll processing of these non-toxic, non-flammable SRT composites along with their carbon-neutral manufacturing processes that has been pioneered by our team make this solution a disruptive and impactful technology to redefine the current SOA of energy storage technologies. The outcomes of this effort have been: 1) the identification of new bio-based PCM that establishes a new SOA for thermal conductivity and energy storage density at room temperature and 2) the development of a new experimental technique to measure the energy storage density via latent heat measurements during melting of thin films. This new technique can be applied to thin films (as thin as < 1 micrometer), and represents a novel approach for thin film energy storage density measurements. Dynamic thermal energy storage is the missing technology that will enable a grid- interactive efficient building (GEB). For a “smart” building capable of connecting with the power grid, the media must be inexpensive and possess thermal switching capabilities to control the time-dependent heat flow into (and out of) the PCM on demand. Unique to the material system in this program, programmable SRT-based PCM show improvements as compared to traditionally used PCMs, and thus its technical performance will represent a leap forward for the future GEB concept.

25 ENERGY STORAGE↗
DOE OSTI2025

Dielectric-Engineered Monolayer MoS 2 Memtransistors for Brain-Inspired Computing with High Recognition Accuracy

Two-dimensional transition metal dichalcogenides (2D-TMDs)-based memtransistors have emerged as promising candidates for neuromorphic hardware due to their exceptional ability to emulate synaptic behavior. However, many existing 2D-TMDs memtransistors rely on polycrystalline channels with grain boundaries or defects introduced through postgrowth treatments, raising concerns about material integrity and the preservation of intrinsic properties. Here, in this work, we demonstrate a monocrystalline monolayer MoS 2 memtransistor fabricated on a silicon nitride (SiN X ) substrate, achieving a large resistive switching ratio of 10 4 , a dynamic range exceeding 90, along with highly linear and symmetric weight updates, minimal cycle-to-cycle variability, and low device-to-device variability. These attributes are critical for enabling high-performance neuromorphic hardware. Based on experimental data, we further show that these artificial synapses enable a recognition accuracy of more than 97% on the MNIST handwritten digits data set. Our findings present a straightforward approach to realizing 2D-TMDs memtransistors through dielectric engineering, offering a promising platform for next-generation neuromorphic computing systems.

2D TMDs↗
DOE OSTI2023

Record high room temperature resistance switching in ferroelectric-gated Mott transistors unlocked by interfacial charge engineering

Abstract The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore’s Law era. The close to metallic carrier density in the Mott channel, however, imposes the bottleneck for achieving substantial field effect modulation via a solid-state gate. Previous studies have focused on optimizing the thickness, charge mobility, and carrier density of single-layer correlated channels, which have only led to moderate resistance switching at room temperature. Here, we report a record high nonvolatile resistance switching ratio of 38,440% at 300 K in a prototype Mott transistor consisting of a ferroelectric PbZr 0.2 Ti 0.8 O 3 gate and an R NiO 3 ( R : rare earth)/La 0.67 Sr 0.33 MnO 3 composite channel. The ultrathin La 0.67 Sr 0.33 MnO 3 buffer layer not only tailors the carrier density profile in R NiO 3 through interfacial charge transfer, as corroborated by first-principles calculations, but also provides an extended screening layer that reduces the depolarization effect in the ferroelectric gate. Our study points to an effective material strategy for the functional design of complex oxide heterointerfaces that harnesses the competing roles of charge in field effect screening and ferroelectric depolarization effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Domain wall enabled steep slope switching in MoS2 transistors towards hysteresis-free operation

Abstract The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation mechanisms remain a central topic of debate. In this work, we report steep slope switching in MoS 2 transistors back-gated by single-layer polycrystalline PbZr 0.35 Ti 0.65 O 3 . The devices exhibit current switching ratios up to 8 × 10 6 within an ultra-low gate voltage window of $$V_{{{\mathrm{g}}}} = \pm \! 0.5$$ V g = ± 0.5 V and subthreshold swing (SS) as low as 9.7 mV decade −1 at room temperature, transcending the 60 mV decade −1 Boltzmann limit without involving additional dielectric layers. Theoretical modeling reveals the dominant role of the metastable polar states within domain walls in enabling the NC mode, which is corroborated by the relation between SS and domain wall density. Our findings shed light on a hysteresis-free mechanism for NC operation, providing a simple yet effective material strategy for developing low-power 2D nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Defect-engineered monolayer MoS 2 with enhanced memristive and synaptic functionality for neuromorphic computing

Two-dimensional transition metal dichalcogenides (TMDs)-based memristors are promising candidates for realizing artificial synapses in next-generation computing. However, practical implementation faces several challenges, such as high non-linearity and asymmetry in synaptic weight updates, limited dynamic range, and cycle-to-cycle variability. Here, utilizing optimal-power argon plasma treatment, we significantly enhance the performance matrix of memristors fabricated from monolayer MoS 2 . Our approach not only improves linearity and symmetry in synaptic weight updates but also increases the number of available synaptic weight updates and enhances Spike-Time Dependent Plasticity. Notably, it broadens the switching ratio by two orders, minimizes cycle-to-cycle variability, reduces non-linear factors, and achieves an energy consumption of ~30 fJ per synaptic event. Implementation of these enhancements is demonstrated through Artificial Neural Network simulations, yielding a learning accuracy of ~97% on the MNIST hand-written digits dataset. Our findings underscore the significance of defect engineering as a powerful tool in advancing the synaptic functionality of memristors.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Nanoscale Quantum Imaging of Field-Free Deterministic Switching of a Chiral Antiferromagnet

Recently, unconventional spin-orbit torques (SOTs) with tunable spin generation have opened new pathways for designing novel magnetization control for cutting-edge spintronics innovations. A leading research thrust is to develop field-free deterministic magnetization switching for implementing scalable and energy favorable magnetic recording and storage, which have been demonstrated in conventional ferromagnetic and antiferromagnetic material systems. Here, in this work, we extend this advanced magnetization control strategy to chiral antiferromagnet Mn 3 ⁢Sn using spin currents with out-of-plane canted polarization generated from low-symmetry van der Waals (vdW) material WTe 2 . Numerical calculations suggest that dampinglike SOT of spins injected perpendicular to the kagome plane of Mn 3⁢ Sn serves as a driving force to rotate the chiral magnetic order, while the fieldlike SOT of spin currents with polarization parallel to the kagome plane provides the bipolar deterministicity to the magnetic switching in the absence of an external magnetic field. We further introduce scanning quantum microscopy to visualize nanoscale evolutions of Mn 3 ⁢Sn magnetic domains during the field-free switching process, corroborating the exceptionally large magnetic switching ratio up to 90%. Our results highlight the opportunities provided by hybrid SOT material platforms consisting of noncollinear antiferromagnets and low-symmetry vdW spin source materials for developing next-generation spintronic logic devices.

2-dimesional systems↗
NASA NTRS1971

Inorganic photochromic and cathodochromic recording materials.

Discussion of studies at RCA Laboratories of the properties of rare-earth-doped CaF2, transition-metal-doped SrTiO3 and iron- or sulfur-doped sodalite as photochromic materials which change color during light or electron beam exposures. Particular attention is given to their photochromic characteristics in single-crystal and powder forms and to their cathodochromic properties in powder form. Details are given on the photochromic mechanisms, spectra, optical density, thermal decay rates, and coloring and bleaching efficiency of their single crystals and on the diffuse reflectance spectra, saturated photochromic contrast ratio, switching and erase sensitivities, and cathodochromic excitation of their photochromic powders. The many attractive characteristics of these materials when used in display storage systems are indicated.

Duncan, R. C., Jr.↗
NASA NTRS1990

Describing-function analysis of a ripple regulator with slew-rate limits and time delays

The effects of time delays and slew-rate limits on the steady-state operating points and performance of a free-running ripple regulator are evaluated using describing-function analysis. The describing function of an ideal comparator (no time delays or slew rate limits) has no phase shift and is independent of frequency. It is found that turn-on delay and turn-off delay have different effects on gain and phase and cannot be combined. Comparator hysteresis affects both gain and phase; likewise, time delays generally affect both gain and phase. It is found that the effective time delay around the feedback loop is one half the sum of turn-on and turn-off delays, regardless of whether the delays are caused by storage time or slew rate limits. Expressions are formulated for the switching frequency, switch duty ratio, dc output, and output ripple. For the case of no hysteresis, a simple, graphical solution for the switching frequency is possible, and the resulting switching frequency is independent of first-order variations of input or load.

Wester, Gene W.↗
NASA NTRS1974

Versatile, analog-to-digital, power-regulator controller

Power controller uses digital techniques to vary duty ratio of switching-type power regulators. Duty ratio is adjusted by comparing error signal with ramp voltage signal. As compared to previously-used switching regulators, controller uses fewer components and no magnetics and is readily adaptable to thick-film technology.

Mclyman, W. T.↗
NASA NTRS2005

Series-Connected Buck Boost Regulators

A series-connected buck boost regulator (SCBBR) is an electronic circuit that bucks a power-supply voltage to a lower regulated value or boosts it to a higher regulated value. The concept of the SCBBR is a generalization of the concept of the SCBR, which was reported in "Series-Connected Boost Regulators" (LEW-15918), NASA Tech Briefs, Vol. 23, No. 7 (July 1997), page 42. Relative to prior DC-voltage-regulator concepts, the SCBBR concept can yield significant reductions in weight and increases in power-conversion efficiency in many applications in which input/output voltage ratios are relatively small and isolation is not required, as solar-array regulation or battery charging with DC-bus regulation. Usually, a DC voltage regulator is designed to include a DC-to-DC converter to reduce its power loss, size, and weight. Advances in components, increases in operating frequencies, and improved circuit topologies have led to continual increases in efficiency and/or decreases in the sizes and weights of DC voltage regulators. The primary source of inefficiency in the DC-to-DC converter portion of a voltage regulator is the conduction loss and, especially at high frequencies, the switching loss. Although improved components and topology can reduce the switching loss, the reduction is limited by the fact that the converter generally switches all the power being regulated. Like the SCBR concept, the SCBBR concept involves a circuit configuration in which only a fraction of the power is switched, so that the switching loss is reduced by an amount that is largely independent of the specific components and circuit topology used. In an SCBBR, the amount of power switched by the DC-to-DC converter is only the amount needed to make up the difference between the input and output bus voltage. The remaining majority of the power passes through the converter without being switched. The weight and power loss of a DC-to-DC converter are determined primarily by the amount of power processed. In the SCBBR, the unswitched majority of the power is passed through with very little power loss, and little if any increase in the sizes of the converter components is needed to enable the components to handle the unswitched power. As a result, the power-conversion efficiency of the regulator can be very high, as shown in the example of Figure 1. A basic SCBBR includes a DC-to-DC converter (see Figure 2). The switches and primary winding of a transformer in the converter is connected across the input bus, while the secondary winding and switches are connected in series with the output bus, so that the output voltage is the sum of the input voltage and the secondary voltage of the converter. In the breadboard SCBBR, the input voltage applied to the primary winding is switched by use of metal oxide/semiconductor field-effect transistors (MOSFETs) in a full bridge circuit; the secondary winding is center-tapped, with two MOSFET switches and diode rectifiers connected in opposed series in each leg. The sets of opposed switches and rectifiers are what enable operation in either a boost or a buck mode. In the boost mode, input voltage and current, and the output voltage and current are all positive; that is, the secondary voltage is added to the input voltage and the net output voltage can be regulated at a value equal or greater than the input voltage. In the buck mode, input voltage is still positive and the current still flows in the same direction in the secondary, but the switches are controlled such that some power flows from the secondary to the primary. The voltage across the secondary and the current into the primary are reversed. The result is that the output voltage is lower than the input voltage, and some power is recirculated from the converter secondary back to the input. Quantitatively, the advantage of an SCBBR is a direct function of the regulation range required. If, for example, a regulation range of 20 percent is required for a 500-W supply, th it suffices to design the DC-to-DC converter in the SCBBR for a power rating of only 100 W. The switching loss and size are much smaller than those of a conventional regulator that must be rated for switching of all 500 W. The reduction in size and the increase in efficiency are not directly proportional to switched-power ratio of 5:1 because the additional switches contribute some conduction loss and the input and output filters must be larger than those typically required for a 100-W converter. Nevertheless, the power loss and the size can be much smaller than those of a 500-W converter.

Birchenough, Arthur G.↗