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At least 19 records

Structural changes across thermodynamic maxima in supercooled liquid tellurium: a water-like scenario

Liquid polymorphism is an intriguing phenomenon which has been found in a few single-component systems, the most famous being water. By supercooling liquid Te to more than 130 K below its melting point and performing simultaneous small-angle and wide-angle X-ray scattering measurements, we observe clear maxima in its thermodynamic response functions around 615 K, suggesting the possible existence of liquid polymorphism. A close look at the underlying structural evolution shows the development of intermediate-range order upon cooling, most strongly around the thermodynamic maxima, which we attribute to bond-orientational ordering. The striking similarities between our results and those of water, despite the lack of hydrogen-bonding and tetrahedrality in tellurium, indicate that water-like anomalies may be a general phenomenon among liquid systems with competing bond- and density-ordering.

36 MATERIALS SCIENCE↗

Mid-Infrared Photoluminescence from Tellurium Thin Films

Tellurium is an elemental semiconductor with a 0.34 eV optical band gap, showing promise for mid-infrared (MIR) optoelectronics including light-emitting diodes. However, quantitative measurement of the tellurium luminescence efficiency has not yet been investigated, and growing optically active films remain challenging. Here, we demonstrate the low-temperature growth of bright tellurium thin films by using physical vapor transport. The sample morphology is controlled by varying the growth temperature, yielding continuous thin films, microparticles, or nanowires. Additionally, we demonstrated patterned growth by using a seed layer for selective nucleation. Quantitative photoluminescence measurements at room temperature reveal an internal quantum yield of 2.0% at 0.34 eV for the as-grown tellurium films, comparable to the best-reported efficiencies of III-V and II-VI compound semiconductors with similar band gaps. Furthermore, we demonstrate band-gap tunability with Te-Se alloys, where up to 20% selenium incorporation gradually blue-shifts the band gap to 0.55 eV. The work demonstrates the potential use of tellurium for efficient MIR devices.

Wang, Shu↗

Intrinsic helical twist and chirality in ultrathin tellurium nanowires

Robust atomic-to-meso-scale chirality is now observed in the one-dimensional form of tellurium. This enables a large and counter-intuitive circular-polarization dependent second harmonic generation response above 0.2 which is not present in two-dimensional tellurium. Orientation variations in 1D tellurium nanowires obtained by four-dimensional scanning transmission electron microscopy (4D-STEM) and their correlation with unconventional non-linear optical properties by second harmonic generation circular dichroism (SHG-CD) uncovers an unexpected circular-polarization dependent SHG response from 1D nanowire bundles – an order-of-magnitude higher than in single-crystal two-dimensional tellurium structures – suggesting the atomic- and meso-scale crystalline structure of the 1D material possesses an inherent chirality not present in its 2D form; and which is strong enough to manifest even in the aggregate non-linear optical (NLO) properties of aggregates.

36 MATERIALS SCIENCE↗

Tellurium Corrosion of Type 304/304L Stainless Steel, Iron, Chromium, and Nickel in High-Temperature Liquid Sodium

Investigating tellurium (Te) corrosion on structural materials is crucial for sodium-cooled fast reactors (SFRs) due to radionuclide presence and knowledge gaps. In this study, Type 304/304L stainless steel (SS304), chromium (Cr), iron (Fe), and nickel (Ni) samples were immersed in low-oxygen environments with Te in liquid sodium at 773 K for 30 days. At 10 ppm oxygen, SS304 showed multiple oxide layers, including a compact NaCrO 2 interlayer and porous Na-Fe-Ni-O outer layers. Tellurium penetrated through the porous layers but was hindered by the NaCrO 2 interlayer. At 0.01 ppm oxygen, Cr had no oxide layer, while Fe and Ni had unstable ones. Tellurium-induced pitting was deeper in Fe and Ni compared to Cr. Oxygen levels and Cr composition are critical factors affecting stable oxide compound layer formation and mitigating Te-induced pitting.

36 MATERIALS SCIENCE↗

Desorption characteristics of selenium and tellurium thin films

The temperature-dependent desorption behavior of selenium and tellurium is investigated using a heated quartz crystal microbalance. Prior to heating the quartz crystal microbalance, selenium and tellurium films with varying thickness were deposited using thermal effusion cells in a molecular beam epitaxy system for subsequent determination of temperature-dependent mass loss of the deposited films. The desorption rate for tellurium was found to exhibit one sharp peak around 190°C, indicating the loss of the entire film irrespective of film thickness within a temperature window of 20°C, which was completely evaporated at 200°C. Similar experiments for selenium revealed that the thermal desorption took place via a two-stage process with a smaller portion of the material desorbing within an even narrower temperature window of 5°C at a much lower peak temperature of 65°C, while most selenium desorbed within a temperature range of 10°C around 90°C. This two-stage behavior indicated the presence of at least two chemically distinct selenium species or binding states. The direct and quantitative determination of the chalcogen desorption process provides important insights into the kinetics of chalcogenide-based film growth and is in addition of applied benefit to the research community in the area of Se/Te capping and decapping of air sensitive materials as it provides temperature ranges and rates at which full desorption is achieved. Our work furthermore points toward the need for a more detailed understanding of the chemical composition state of atomic and molecular beams supplied from thermal evaporation sources during growth.

36 MATERIALS SCIENCE↗

Technological survey of tellurium and its compounds

Review includes data on the chemical and physical properties of tellurium, its oxides, and fluorides, pertinent to the process problem of handling fission product tellurium in fluoride form. The technology of tellurium handling in nonaqueous processing of nuclear fuels is also reviewed.

Steindler, M. J.↗

Anode-free, Lean-Electrolyte Lithium-Sulfur Batteries Enabled by Tellurium-Stabilized Lithium Deposition

For realizing practically viable lithium-sulfur (Li-S) batteries, it is imperative to stabilize Li deposition and improve cyclability while reducing excess Li and electrolyte. We have discovered that introducing tellurium (Te) into the Li-S system as a cathode additive significantly improves the reversibility of Li plating and stripping by forming a tellurized and sulfide-rich solid-electrolyte interphase (SEI) layer on the Li surface. A remarkable improvement in cyclability is demonstrated in anode-free full cells with limited Li inventory and large-area Li-S pouch cells under lean electrolyte conditions. Tellurium reacts with polysulfides to generate soluble polytellurosulfides that migrate to the anode side and form stabilizing lithium thiotellurate and lithium telluride in situ as SEI components. A significant reduction in electrolyte decomposition on the Li surface is also engendered. This work demonstrates Te inclusion as a viable strategy for stabilizing Li deposition and establishes a robust evaluation framework for preserving electrochemical performance under limited Li and limited electrolyte conditions.

36 MATERIALS SCIENCE↗

A method to load tellurium in liquid scintillator for the study of neutrinoless double beta decay

Herein, a method has been developed to load tellurium into liquid scintillator so as to permit searches for neutrinoless double beta decay with high sensitivity. The approach involves the synthesis of an oil-soluble tellurium compound from telluric acid and an organic diol. The process utilises distillable chemicals that can be safely handled underground and affords low radioactive backgrounds, low optical absorption and high light yields at loading levels of at least several percent Te by weight.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Femtosecond Laser-Induced Nano-Joining of Volatile Tellurium Nanotube Memristor

Nanowire/nanotube memristor devices provide great potential for random-access high-density resistance storage. However, fabricating high-quality and stable memristors is still challenging. This paper reports multileveled resistance states of tellurium (Te) nanotube based on the clean-room free femtosecond laser nano-joining method. The temperature for the entire fabrication process was maintained below 190 °C. A femtosecond laser joining technique was used to form nanowire memristor units with enhanced properties. Femtosecond (fs) laser-irradiated silver-tellurium nanotube-silver structures resulted in plasmonic-enhanced optical joining with minimal local thermal effects. This produced a junction between the Te nanotube and the silver film substrate with enhanced electrical contacts. Noticeable changes in memristor behavior were observed after fs laser irradiation. Capacitor-coupled multilevel memristor behavior was observed. Compared to previous metal oxide nanowire-based memristors, the reported Te nanotube memristor system displayed a nearly two-order stronger current response. The research displays that the multileveled resistance state is rewritable with a negative bias.

42 ENGINEERING↗

Orientated Growth of Ultrathin Tellurium by van der Waals Epitaxy

Abstract Tellurium, as an elemental van der Waals semiconductor, has intriguing anisotropic physical properties owing to its inherent 1D crystal structure. To exploit the anisotropic and thickness‐dependent behavior, it is important to realize orientated growth of ultrathin tellurium. Here, van der Waals epitaxial growth of Te on the surface of 2D transition metal dichalcogenides is systematically investigated. Orientated growth of Te with a thickness down to 5 nm is realized on three‐fold symmetric substrates (WSe 2 , WS 2 , MoSe 2 , and MoS 2 ), where the atomic chains of Te are aligned with the armchair directions of substrates. 1D/2D moiré superlattices are observed for the Te/WSe 2 heterostructure. This method is extended to the growth of SeTe alloys, providing flexibility for band engineering. Finally, growth of textured Te film is demonstrated on the lower‐symmetry surface of WTe 2 .

Zhao, Chunsong↗

Thermally Stable Ruthenium Contact for Robust p‑Type Tellurium Transistors

Tellurium (Te) is attractive for p-channel transistors due to its high hole mobility. Despite having a low thermal budget suitable for back-end-of-line (BEOL) monolithic integration, the practical realization of Te transistors is hindered by its thermal stability. In this work, we investigate thermal stability for Te thin films grown via scalable thermal evaporation. Our findings identify ruthenium as a more thermally stable contact for p-type Te transistors, capable of withstanding temperatures up to 250 °C. Ruthenium exhibits significantly lower diffusivity in Te compared to other contact metals commonly used such as nickel and palladium. Using the transfer-length method, we measured a contact resistance of 1.25 kΩ·μm at the ruthenium-tellurium interface. Additionally, the incorporation of high-κ ZrO2 encapsulation not only suppresses the sublimation of the Te channel at elevated temperatures but also serves as the gate dielectric in top-gate devices operating at 1 V, achieving an on/off current ratio of 105.

Rahman, I K M Reaz↗

Dynamic magneto-chiral instability in photoexcited tellurium

In systems of charged chiral fermions out of equilibrium, an electric current parallel to a magnetic field can generate a dynamic instability that amplifies electromagnetic waves. Whether this mechanism also operates in chiral solid-state systems has remained uncertain. Here we observe signatures of a dynamic magneto-chiral instability in elemental tellurium, a structurally chiral crystal, using time-domain terahertz emission spectroscopy. Under transient photoexcitation in a moderate magnetic field, we observe terahertz radiation with coherent modes that grow in amplitude over time. We present a theoretical model that describes this behaviour based on a dynamic instability of electromagnetic waves interacting with infrared-active oscillators of acceptor states in tellurium, giving rise to an amplifying polariton. These results demonstrate that magneto-chiral instabilities can emerge in solid-state systems and establish a mechanism for terahertz-wave amplification in chiral materials.

42 ENGINEERING↗

Quantitative characterization of ZrO2 gate dielectric interface with tellurium

Tellurium (Te) has recently emerged as a promising p-type semiconductor that can be processed at low temperatures, compatible with back end of line CMOS integration. Characterization of tellurium–dielectric interfaces is essential for further device advancements. Here, the interface quality of Te with ZrO2 gate dielectric is studied in a metal-oxide semiconductor capacitor structure. The interface trap density (Dit) is measured as a function of atomic layer deposition (ALD) temperature, without the use of a seed layer. Given the low thermal budget of Te, the ALD temperature is shown to be particularly important. The lowest Dit of 5 × 1012 states/cm2 eV is obtained at a low ALD process temperature of 120 °C. To further assess the impact of Dit on device performance, field-effect transistors (FETs) were fabricated. The subthreshold swing and effective hole mobility of the FETs were analyzed in relation to Dit, emphasizing the importance of a defect-minimized interface for enhancing Te transistor performance.

Byeon, Kyeong-Jae↗

Uncertainties in tellurium-based dark matter searches stemming from nuclear structure uncertainties

Using tellurium dioxide as a target, we calculate uncertainties on 90% upper confidence limits of Galilean effective field theory (Galilean EFT) couplings to a weakly interacting massive particle (WIMP) dark matter candidate due to uncertainties in nuclear shell models. We find that these uncertainties in naturally occurring tellurium isotopes are comparable across the different Galilean EFT couplings to uncertainties in xenon, with some reaching over 100%. We also consider the effect these nuclear uncertainties have on estimates of the annual modulation of dark matter from these searches, finding that the uncertainties in the modulation amplitude are proportional to the nonmodulating upper confidence limit uncertainties. We also show that the determination of the modulation phase is insensitive to changes in the nuclear model for a given isotope.

79 ASTRONOMY AND ASTROPHYSICS↗

Cultivation and Use of Acidithiobacillus ferrooxidans in Tellurium Biorecovery

The use of Acidithiobacillus ferrooxidans, Thiobacillus thiooxidans, and other chemoautotrophic microbes in bioleaching have been implemented in a variety of processes.1 In industry, bioleaching has been studied for its potential to extract valuable metals from low grade ores that would otherwise be cost prohibitive to recover.2 Other applications of bioleaching include the ability of certain microbes to detoxify waste products and even heavy metal contaminated soils.3 Another potential application for such bio-oxidative microbial activity is the extraction of tellurium (Te) from mine tailings, a low-cost abundant resource. Tellurium is one of the least common elements on Earth; it is found in the planetary crust at about 1 µg/kg, a rarity most comparable to that of platinum.4 A major use of Te in the U.S. is in cadmium-telluride (CdTe) solar panels5. Te is primarily imported into the U.S. from Canada, and it is usually recovered as a byproduct of copper refining.6 Since CdTe photovoltaic (PV) cells are the most efficient, cost-effective, and environmentally friendly PV chemistry, the renewables market has seen an increased demand for CdTe PV cells causing some concerns about sustainability and the limited global availability of Te. Acidithiobacillus ferroxidans is a microorganism that can oxidize iron and sulfur to produce ferric iron and sulfuric acid, and it is possible that it could also solubilize Te from sulfidic mine tailings. In this project, different media for growth of A. ferroxidans were evaluated, and a plan for testing the ability of A. ferroxidans to leach Te from mine tailings was developed. Initial characterization of A. ferroxidans cultures grown in the presence of copper tailings suggests that conditions suitable for Te bioleaching can be established.

60 APPLIED LIFE SCIENCES↗

Lithium-tellurium bimetallic cell has increased voltage

Lithium-tellurium secondary cell with a fused lithium halide electrolyte, tested in the temperature range 467 degrees to 500 degrees C, showed improvement over the sodium bismuth cell. The voltage of this bimetallic cell was increased by using the more electropositive anode material, lithium, and the more electronegative cathode material, tellurium.

Cairns, E. J.↗

Upstream Extraction of Tellurium from Copper Concentrates

A major barrier to increasing CdTe PV module production is the availability of tellurium (Te), an element necessary to manufacture CdTe PV cells that currently has a very limited supply. Most Te is obtained from ore extracted for copper mining, but the current processing methods only extract 3-4% of the available Te in this ore, with the rest being discarded during other processing steps. This project aims to increase Te supply by developing an innovative extraction method that will recover more Te from the copper ore earlier in the process. This method will also extract toxic elements like antimony and arsenic, making the copper mining process more environmentally friendly.

14 SOLAR ENERGY↗