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All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Impact of Arsenic- and Indium-Terminated InGaAs Stressors on Carrier Confinement, Strain, Defects, and Transport Properties of Tensile-Strained Ge

Device-quality tensile-strained Ge (ε-Ge) grown on a large bandgap semiconductor with superior electrical and optical carrier confinement is essential for group-IV-based optoelectronics. Properties of ε-Ge active layers synthesized on In 0.24 Ga 0.76 As buffers with two different surface terminations─arsenic-rich and indium-rich─were experimentally demonstrated, highlighting the factors not considered in theoretical calculations. High-resolution X-ray diffraction and Raman spectroscopy analyses of these ε-Ge/In 0.24 Ga 0.76 As heterostructures confirmed the fully strained (1.6%) and partially relaxed (0.82%) nature of the ε-Ge bonded with arsenic-terminated (Ge As-terminated ) and indium-terminated (Ge In-terminated ) In 0.24 Ga 0.76 As stressors, respectively. High-resolution cross-sectional transmission electron microscopy showed a coherent, sharp, and fully strained ε-Ge/In 0.24 Ga 0.76 As heterointerface in the Ge As-terminated heterostructure, whereas microtwin defects were present in the Ge In-terminated heterostructure. These heterostructures were further characterized by evaluating the minority carrier lifetimes, high for Ge As-terminated (525 ns) and low for Ge In-terminated (69 ns), using the photoconductive decay technique. Moreover, band alignment was constructed using X-ray photoelectron spectroscopy, where the Ge As-terminated heterostructure revealed that both holes and electrons were confined within the ε-Ge active layer as a type-I band alignment with ΔE V, As-terminated = 0.22 eV and ΔE C,As-terminated = 0.38 eV. On the other hand, the Ge In-terminated heterostructure exhibited a type-II band alignment with ΔE V,In-terminated = – 0.02 eV and ΔE C,In-terminated = 0.53 eV. Furthermore, the magnetotransport properties revealed high mobility (321 cm 2 /(V s)) with single-electron transport in Ge As-terminated heterostructure and low mobility (3.34 cm 2 /(V s)) with multihole transport in the Ge In-terminated heterostructure. Therefore, preferring the ε-Ge on the arsenic-rich surface of In 0.24 Ga 0.76 As stressor over the indium-rich surface during material synthesis offers device-quality materials with high carrier lifetime and superior carrier confinement, which can provide an opportunity to fabricate efficient group-IV-based optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Enhanced critical axial tensile strain limit of CORC ® wires: FEM and analytical modeling

Abstract Conductor on Round Core (CORC ® ) cables and wires are composed of spiraled high-temperature superconducting (HTS) rare-earth barium copper oxide (REBCO) tapes, wound in multiple layers, and can carry very high currents in background magnetic fields of more than 20 T. They combine isotropic flexibility and high resilience to electromagnetic and thermal loads. The brittle nature of HTS tapes limits the maximum allowable axial tensile strain in superconducting cables. An intrinsic tensile strain above about 0.45% will introduce cracks in the REBCO layer of straight HTS tapes resulting in irreversible damage. The helical fashion at which the REBCO tapes are wound around the central core allows tapes to experience only a fraction of the total axial tensile strain applied to the CORC ® wire. As a result, the critical strain limit of CORC ® wires can be increased by a factor of more than 10 that of REBCO tapes. Finite element (FE) and analytical models are developed to predict the performance of CORC ® wires under axial tensile strain. A parametric analysis is carried out by varying the winding angle, the Poisson’s ratio of the CORC ® wire core, the core diameter, and the tape width. The results show that a small variation in winding angle can have a significant impact on the cable’s axial tensile strain tolerance. While the radial contraction of the helically wound tapes in a CORC ® wire under axial tensile strain depends on its winding angle, it is mostly driven by the Poisson’s ratio of the central core, affecting the tape strain state and thus its performance. Contact pressure from multiple layers within the CORC ® wire also affects the CORC ® wire performance. The FE model can be used to optimize the cable design for specific application conditions, resulting in an irreversible strain limit of CORC ® cables and wires as high as 7%.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Heavy boron doping effects on biaxially tensile strained germanium (>1.5%) investigated via structural characterization, effective lifetime assessment and atomistic modeling

Highly tensile strained germanium (ε-Ge) represents an essential material system for emerging electronic and photonics applications. Moreover, adjusting the doping levels to moderate or high concentrations can effectively tailor the properties of ε-Ge for specific applications. This article combines experimental characterization with a theoretical framework to examine the effects of heavy elemental boron (B) doping on pseudomorphic sub-50 nm ε-Ge. High resolution X-ray diffractometry is used to validate tensile strain levels of 1.53% and 1.68% in Ge epilayers, surpassing the indirect-to-direct band gap crossover point at ∼1.5% biaxial tensile strain. Cross-sectional transmission electron microscopy revealed visual evidence of stacking faults and surface roughening in 1.68% ε-Ge, although a coherent and abrupt Ge/III–V heterointerface is observed, devoid of interfacial misfit dislocations. Effective lifetime measurements demonstrated approximately twofold enhancement in 1.53% B-doped ε-Ge (N B ∼7 × 10 19 cm −3 ) compared to its unstrained B-doped counterpart, while no such improvement was observed in 1.68% B-doped ε-Ge. This lack of enhancement is attributed to the presence of stacking faults and surface roughness within the ε-Ge epilayer. Through density functional theory calculations, we independently demonstrate that substitutional B atoms induce local deformation of Ge–Ge bonds in both unstrained Ge and ε-Ge epilayers, resulting in an additive tensile strain. This phenomenon could potentially lead to dynamic reduction and overcoming of the critical layer thickness for the system, facilitating the nucleation and subsequent glide of 90° leading Shockley partial dislocations, thereby generating stacking faults. In essence, these findings establish an upper limit on the B-doping concentration that can be achieved in highly ε-Ge epilayers, and collectively, offer valuable insights into the significance of heavy doping in Ge-based heterostructures. As such, this study delineates a fundamental constraint for integrating heavily doped ε-Ge in high-performance optoelectronic systems, necessitating precise strain-doping co-optimization to avoid performance degradation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Compact in situ probe for magnetotransport measurements of 2D materials under variable tensile strain

The recent development of freestanding oxide membranes has opened new opportunities for strain engineering of transition metal oxides beyond values accessible in bulk samples. While a number of studies have been performed with fixed strain, the ability to dynamically control the strain state during measurement would be greatly enabling. To this end, we present an in situ uniaxial strain probe optimized for transport measurements of tensile-strained 2D or quasi-2D materials down to 2 K. Utilizing a flexible polyimide substrate as the stress transfer medium, our platform simplifies the sample preparation process and allows precise alignment of strain fields relative to the crystalline axes. An in situ optical microscope monitors the macroscopic strain state operando and makes it possible to complete an entire magnetotransport study at cryogenic temperatures under continuous strain variations. We demonstrate the capabilities of the probe on a freestanding LaNiO 3 membrane, where we induce tensile strain up to 8% and observe a corresponding strong transport anisotropy. In view of the rapid developments in low-dimensional materials synthesis and the plethora of novel quantum phenomena they exhibit, this strain probe provides general instrumentation for examining and controlling these properties via strain.

2D materials↗
DOE OSTI2024

Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double Heterostructures

Extensive research efforts of strained germanium (Ge) are currently underway due to its unique properties, namely, (i) possibility of band gap and strain engineering to achieve a direct band gap, thus exhibiting superior radiative properties, and (ii) higher electron and hole mobilities than Si for upcoming technology nodes. Realizing lasing structures is vital to leveraging the benefits of tensile-strained Ge (ε-Ge). Here, we use a combination of different analytical tools to elucidate the effect of the underlying InGaAs/InAlAs and InGaAs overlaying heterostructures on the material quality and strain state of ε-Ge grown by molecular beam epitaxy. Using X-ray analysis, we show the constancy of tensile strain in sub-50 nm ε-Ge in a quantum-well (QW) heterostructure. Further, effective carrier lifetime using photoconductive decay as a function of buffer type exhibited a high (low) defect-limited carrier lifetime of ~68 ns (~13 ns) in 0.61% (0.66%) ε-Ge grown on an InGaAs (InAlAs) buffer. These results correspond well with the measured surface roughness of 1.289 nm (6.303 nm), consistent with the surface effect of the ε-Ge/III–V heterointerface. Furthermore, a reasonably high effective lifetime of ~78 ns is demonstrated in a QW of ~30 nm 1.6% ε-Ge, a moderate reduction from ~99 ns in uncapped ε-Ge, alluding to the surface effect of the overlying heterointerface. Thus, the above results highlight the prime quality of ε-Ge that can be achieved via III–V heteroepitaxy and paves a path for integrated Ge photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Tunable Mid-Infrared Interband Emission from Tensile-Strained InGaAs Quantum Dots

We demonstrate the ability to tailor self-assembled growth of In 0.5 Ga 0.5 As quantum dots (QDs) on GaSb(111)A surfaces by molecular beam epitaxy. Spontaneous formation via the Volmer–Weber growth mode produces QDs with excellent structural and optical quality. By harnessing tensile strain to reduce their band gap energy, these QDs are characterized by light emission that extends into the midwave infrared wavelength range of 3.2–3.9 μm (0.318–0.388 eV). As we increase QD size, we can tune the band alignment from type-III to type-II, where light emission occurs due to interband recombination between quantum confined electrons in the InGaAs QDs and holes in the GaSb barriers. Of particular interest is an unusual blue-shift in emission wavelength with increasing QD size, which we attribute to the incorporation of Sb into the InGaAs QDs from the GaSb barriers. By expanding this approach to produce tensile-strained QDs from other narrow band gap semiconductors, we anticipate the development of a range of highly tunable mid-infrared light sources.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Strain engineering can modulate the material properties of two-dimensional (2D) sem- iconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS 2 , a 2D semiconductor, but the effects of biaxial strain on charge transport are not well-understood in 2D semiconductors. Here, we use biaxial tensile strain on flexible substrates to probe the electron mobility in monolayer WS 2 and MoS 2 transistors. Further, this approach experimentally achieves ~2× higher on-state current and mobility with ~0.3% applied biaxial strain in WS 2 , the highest mobility improvement at the lowest strain reported to date. We also examine the mechanisms behind this improvement through density functional theory simulations, concluding that the enhancement is primarily due to reduced intervalley electron-phonon scattering. These results underscore the role of strain engineering 2D semiconductors for flexible electronics, sensors, integrated circuits, and other opto-electronic applications.

2D materials↗
DOE OSTI2026

Interplay of Quantum Size Effect and Tensile Strain on Surface Morphology of β-Sn(100) Islands

The quantum size effect (QSE) and strain effect are two key factors influencing the surface morphology of thin films, which can increase film surface roughness through QSE-induced thickness oscillation and strain-induced island formation, respectively. Surface roughness usually manifests in the early stages of film growth and diminishes beyond a critical thickness. In this work, we employ molecular beam epitaxy (MBE) to grow β-Sn(100) islands with varying thickness N on bilayer graphene-terminated 6H-SiC(0001) substrates. Scanning tunneling microscopy and spectroscopy measurements reveal an inverse surface roughness effect that highlights the interplay of QSE and misfit strain in shaping the surface morphology of β-Sn(100) islands. For N ≤ 10, the islands exhibit flat surfaces, while for N ≥ 26, the island surfaces become corrugated and patterned. For the intermediate range, i.e., 12 ≤ N ≤ 24, both flat and patterned surfaces coexist, with the percentage coverage of the patterned surface oscillating as a function of N. By performing density functional theory calculations, we demonstrate that the unusual surface pattern evolution in our MBE-grown β-Sn(100) islands is a result of the interplay between QSE-induced surface roughing and tensile strain-induced smoothening effect.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

High-temperature superconducting CORC ® wires with record-breaking axial tensile strain tolerance present a breakthrough for high-field magnets

Cuprate high-temperature superconductors (HTS), such as RE-Ba 2 Cu 3 O 7–δ (REBCO, RE = rare earth), (Bi,Pb) 2 Sr 2 Ca 2 Cu 3 O 10–x and Bi 2 Sr 2 CaCu 2 O 8–x , have enabled the development of high-field superconducting magnets capable of generating magnetic fields far exceeding 20 T. The brittle nature of HTS requires elaborate means to protect them against the high stresses and strains associated with high-field magnet operation, and so far, has prevented reliable high-field HTS magnets from becoming a reality. Here we report a more than tenfold increase in the irreversible strain limit under axial tension (epsilonirr) to over 7% in optimized high-current conductor on round core (CORC®) conductors, compared to the REBCO tapes from which the CORC® conductor is wound. Minimizing the tape winding pitch of the helical wind mechanically decouples the brittle REBCO film from the overall conductor. The REBCO tapes behave as springs, limiting the rate at which applied strain is transferred to the ceramic film. In addition, high-strength alloy cores allow the critical stress (ϵ crit ) under axial tension at which initial degradation of CORC® conductors occurs to exceed 600 MPa, making them one of the strongest superconductors available. Mechanically decoupling the ceramic REBCO films from the overall CORC® conductor allows effective protection against the high operating stresses in high-field magnets. Furthermore, this breakthrough presents a monumental shift for HTS magnet technology, bringing reliable high-field superconducting magnets for compact fusion machines, the next generation of particle accelerators, and 40–60 T research solenoids within reach.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Thermal Conductivity of Graphene Coated Copper Under Uniaxial Tensile Mechanical Strain

Graphene continues to demonstrate promise as a highly effective barrier coating, even at only one atom thick. The thermal properties of this coating are also promising to allow diffusion of heat across the surface, as the isolated graphene is an intrinsically good thermal conductor, yet this and its behavior under mechanical deformation has been less extensively studied. This report demonstrates that the in-plane thermal conductivity and interfacial thermal conductance of graphene coatings on copper are affected by mechanical strain. By inducing a strain in the copper substrate, the Raman-active 2D peak exhibits a change in position as well as a change in laser power dependence as the copper substrate is uniaxially elongated to a maximum of 0.5%. Non-linear trends in thermal conductivity are observed with tensile strain in samples with differing strain transfer rates from the substrate, indicating the close correlation between intrinsic thermal conduction and interfacial properties in atomically thin coatings transferred onto metals.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Real-Time Modulation of Hydrogen Evolution Activity of Graphene Electrodes Using Mechanical Strain

This paper reports the effect of mechanically applied elastic strain on the hydrogen evolution reaction (HER) activity of graphene under acidic conditions. Here, applied tensile strain of 0.2% on a graphene electrode is shown to lead to a 1–3% increase of HER current. Tensile strain increases HER activity while compressive strain decreases it. Density functional theory (DFT) calculations using a periodic graphene slab model show increasing in the adsorption energy of H atom with growing tensile strain, leading to a corresponding enhancement of current density in HER, similar to that observed experimentally.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Material processing, microstructure, and composite properties of low carbon Engineered Cementitious Composites (ECC)

Traditional PVA fiber-reinforced Engineered Cementitious Composites (ECC) show high tensile ductility and superior durability with tight crack width, but the high cost and embodied carbon can hinder its wider application in infrastructures. The objective of this study is to develop a better understanding of the fresh and hardened properties of an ECC that employs a lower embodied-carbon binder, Limestone Calcined Clay Cement (LC3), and lower-cost PP fiber that is widely available. Specifically, the interrelations between material processing, microstructure, and composite properties were studied experimentally. The results showed that ECC with high tensile ductility up to 9% tensile strain and tight crack width with 50 μm at 2% tensile strain can be achieved. It was found that a matrix paste with higher viscosity generally enhanced fiber dispersion uniformity and robustness in tensile strain-hardening. The paste viscosity is increased when OPC is replaced by LC3 and can be tuned with superplasticizer content. Larger maximum flaw size leads to lower first crack strength, beneficial for microcrack initiation and multiple cracking. This study generates fundamental knowledge linking processing-microstructure-performance of PP-LC3-ECC. This class of low embodied carbon ECC with tight crack width is expected to contribute to reducing the carbon footprint of the built environment.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Rapid solidified ductile Cu-Al-Mn ribbon and its elastocaloric potential

Abstract Cu-Al-Mn alloys display martensitic transformation over a wide range of temperatures. In addition to low cost, this alloy is known for its low transformation stress with reasonable latent heat favoring elastocaloric applications. However, the ductility of Cu-Al-Mn can be limited owing to ordering and intergranular fracture. Through rapid solidification by melt spinning, we show that Cu-Al-Mn ribbon can be made highly ductile (greater than 8% tensile strain in the as-spun state and 10% tensile strain after heat treatment). The ductility of the melt-spun ribbon is related to the suppression of L2 1 ordering that is characterized through magnetic property measurement. Heat treatment of the ribbon promotes bamboo grain formation, and the latent heat is increased to 6.4 J g −1 . Under tensile conditions, we show that the ribbon exhibited about 4 °C temperature change (4.4 °C on heating and 4.2 °C on cooling from 6.3% strain).

36 MATERIALS SCIENCE↗
DOE OSTI2022

Straintronic Effect on Phonon-Mediated Superconductivity of Nb 2 CT 2 (T = O, S, Se, or Te) MXenes

Here, the electronic structures, phonon dispersions, and electron–phonon coupling of Nb 2 CT 2 (T = O, S, Se, or Te) MXenes were investigated via first-principles calculations. Different models of Nb 2 CT 2 were constructed, and the results show that the low-energy models of Nb 2 CT 2 are intrinsic phonon-mediated superconductors. Of the four Nb 2 CT 2 MXenes, Nb 2 CO 2 MXene exhibits the largest superconducting critical temperature ($T_c$) of 14.43 K. The existence of soft modes induced by Kohn anomalies and the contribution of Nb atoms to the Fermi level lead to strong electron–phonon coupling (λ = 0.92) in Nb 2 CO 2 MXene. The $T_c$ of Nb 2 CO 2 is further enhanced by biaxial tensile strain and reaches up to 18.28 K under 4% tensile strain. The predicted $T_c$ of Nb 2 CS 2 is 4.5 K, which is comparable with experimental data. These findings will further stimulate the search for superconducting MXenes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Interplay Between Strain and Thickness on the Effective Carrier Lifetime of Buffer-Mediated Epitaxial Germanium Probed by the Photoconductance Decay Technique

We report contactless effective minority carrier lifetime of epitaxially grown unstrained and in-plane <110> biaxially tensile-strained (001) germanium (..epsilon..-Ge) epilayers measured using microwave-reflectance photoconductance decay measurements. Strained Ge epilayers were grown using InxGa1-xAs linearly graded buffers on (001) GaAs substrates. Using homogeneous excitation of unstrained Ge epilayers, thickness-dependent separation of minority carrier lifetime components under low injection conditions yielded a bulk lifetime of 114 +/- 2 ns and low surface recombination velocity of 21.3 +/- 0.04 cm/s. More notably, an effective minority carrier lifetime of >100 ns obtained from sub-50 nm 1.6% tensile-strained Ge epilayers showed no degradation relative to the unstrained counterpart. Detailed material characterization using X-ray diffractometry revealed successful strain transfer of 0.61 and 0.89% to the Ge epilayers via InxGa1-xAs metamorphic buffers and confirms pseudomorphic growth. Lattice coherence observed at the e-Ge epilayer and InxGa1-xAs buffer heterointerfaces via transmission electron microscopy substantiates the prime material quality achieved. The relatively high carrier lifetimes achieved are an indicator of excellent material quality and provide a path forward to realize low-threshold Ge laser sources.

bulk lifetime↗
DOE OSTI2023

Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Abstract We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe 3- x GeTe 2 and the ferroelectric In 2 Se 3 . It is observed that gate voltages applied to the Fe 3- x GeTe 2 /In 2 Se 3 heterostructure device modulate the magnetic properties of Fe 3- x GeTe 2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In 2 Se 3 and Fe 3- x GeTe 2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe 3- x GeTe 2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Strain-Dependent Surface Defect Equilibria of Mixed Ionic-Electronic Conducting Perovskites

We report understanding the surface defect chemistry and its strain dependency is essential in developing next-generation electrochemical devices. However, due to their nanoscale dimensions, surface defects cannot be accessed by conventional techniques used in bulk defect studies. Here, we constructed the strain-dependent surface defect equilibria (i.e., the Brouwer diagram) of mixed ionic-electronic conducting perovskite oxides with near ambient pressure X-ray absorption spectroscopy. Using coherently strained thin-film La 0.6 Sr 0.4 Fe O3 (LSF) as model systems, we probed their surface defect equilibria at 400 °C in oxygen partial pressures between 1 to 10 -5 Torr. We found that the electron holes on the LSF surfaces have strong oxygen character, regardless of the strain states. Nevertheless, tensile strain makes the LSF surface more reducible than the compressed counterpart. These two observations were then validated using first-principles calculations. Finally, with the aid of thermodynamic analyses, we showed that the strain-dependent surface defect equilibria of LSF can be captured by bulk-like ideal solution defect models with shifted oxygen chemical potentials. The findings and methodology presented in this study enable quantitative determination of the surface defect chemistry, which is crucial to understanding and designing functional surfaces for efficient conversions of energy and fuels.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Monolithically Integrated $\varepsilon$-Ge/In x Ga 1-x As Quantum Well Laser Design: Experimental and Theoretical Investigation

Here, we have analyzed the electrical and optical phenomenon occurring in a $\varepsilon$-Ge/In x Ga 1-x -Ge/In x Ga 1-x As quantum well (QW) laser through self-consistent physical solvers calibrated using in-house experimental results. A separate confinement heterostructure QW design is proposed to enable lasing from tensile strained germanium ($\varepsilon$-Ge/In x Ga 1-x -Ge) in the range of 1.55 um to 4 um wavelengths as a function of QW thickness and indium (In) composition. Different recombination mechanisms were analyzed as a function of tensile strain in $\varepsilon$-Ge/In x Ga 1-x -Ge QW. Minority carrier lifetime and band alignment are key attributes of a QW laser, which were measured using microwave photoconductive decay and x-ray photoelectron spectroscopy (as a function of In composition), respectively. The transition point of Ge to a direct bandgap material is re-affirmed to be at $\varepsilon$-Ge/In x Ga 1-x = 1.6% (In ~24%) and the transition from type I to type II for $\varepsilon$-Ge/In x Ga 1-x -Ge/In x Ga 1-x As QW is found to be at In ~55%. Also, the transition to a TM mode dominant laser is identified at In ~15%. Using a tunable waveguide design to optimize confinement as a function of In composition, strain, wavelength, QW thickness, refractive index, and geometry, the $\varepsilon$-Ge/In x Ga 1-x -Ge QW laser design provided a net material gain of ~2000 cm -1 and a threshold current density of ~5 kA/cm 2 , which is an improvement over existing Ge based lasers. In conclusion, the impact of In composition and QW thickness on the band structure, polarized gain spectra, and various lasing metrics were analyzed to show $\varepsilon$-Ge/In x Ga 1-x -Ge/InGaAs QW lasers as promising for integrated photonics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗