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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Spin-based detection of terahertz and sub-terahertz electromagnetic radiation

Systems and methods for spin-based detection of electromagnetic radiation at terahertz and sub-terahertz frequencies is provided. The detector can include a heterostructure, a magnetic field generator, and an electrical circuit. The heterostructure can include a first layer formed of an antiferromagnetic material (AFM) in contact with a second layer of a heavy metal (HM) or a topological insulator. The magnetic field generator can generate a magnetic field oriented approximately parallel to an easy axis of the first layer and approximately parallel to a propagation direction of electromagnetic radiation. The circuit can be in electrical communication with the second layer. The first layer can inject a spin current into the second layer in response to receipt of electromagnetic radiation having a sub-terahertz or terahertz frequency. The second layer can convert the injected spin current into a potential difference. The circuit can be configured to output a signal corresponding to the potential difference.

Shi, Jing↗
DOE OSTI2021

Quantifying Bulk and Surface Recombination in CdTe Solar Cells Using Time-Resolved Terahertz Spectroscopy

Understanding the nature of recombination mechanisms is essential for higher power conversion efficiency in photovoltaic (PV) devices. Here we use a combination of time-resolved terahertz spectroscopy and numerical modeling to determine the bulk Shockley-Read-Hall lifetime and interface and back surface recombination velocities in CdTe thin film stacks. Furthermore, the measurement was facilitated by fabricating wire-grid device structures using conventional laser scribing. Evaluation of a glass/FTO/SnO2/CdS/CdTe stack treated with CdCl2 allowed separation of the CdTe absorber bulk lifetime, 1.6 ns, from the back surface recombination velocity, ~6x10 4 cm/s, and indicated that CdTe/CdS interface recombination velocity had no significant impact on carrier dynamics.

14 SOLAR ENERGY↗
DOE OSTI2024

InAs Terahertz Metalens Emitter for Focused Terahertz Beam Generation

Metasurfaces have opened doors to combining multiple photonic functionalities in a single compact device. In particular, the ability to generate short terahertz (THz) pulses with precise wavefront engineering in a single THz metasurface redefined the role metasurfaces can play in THz systems. Here, an InAs metalens emitter which generates and focuses a THz pulse beam is demonstrated using a 130 nm thick InAs metasurface designed as a binary‐phase Fresnel zone plate. The THz beam is focused to a spot of ≈430 μm at 1 THz with a short focal length of 5 mm and large numerical aperture of 0.5. Nanoscale InAs Mie resonators comprising the metasurface enable THz generation with an amplitude as high as 20 times compared to plasmonic THz emitters and several times compared to a 1 mm thick ZnTe crystal. This InAs metasurface emitter provides a new paradigm for designing THz imaging, spectroscopy, and communication systems, where THz beam generation and shaping are performed with a single device without compromising the generation efficiency, while eliminating losses and avoiding limitations of phase matching of conventional nonlinear optics approaches.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

A room-temperature polarization-sensitive CMOS terahertz camera based on quantum-dot-enhanced terahertz-to-visible photon upconversion

Detection of terahertz (THz) radiation has many potential applications, but presently available detectors are limited in many aspects of their performance, including sensitivity, speed, bandwidth and operating temperature. Most do not allow the characterization of THz polarization states. Recent observation of THz-driven luminescence in quantum dots offers a possible detection mechanism via field-driven interdot charge transfer. Here, we demonstrate a room-temperature complementary metal–oxide–semiconductor THz camera and polarimeter based on quantum-dot-enhanced THz-to-visible upconversion mechanism with optimized luminophore geometries and fabrication designs. Besides broadband and fast responses, the nanoslit-based sensor can detect THz pulses with peak fields as low as 10 kV cm–1. A related coaxial nanoaperture-type device shows a to-date-unexplored capability to simultaneously record the THz polarization state and field strength with similar sensitivity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Giant terahertz polarization rotation in ultrathin films of aligned carbon nanotubes

For easy manipulation of polarization states of light for applications in communications, imaging, and information processing, an efficient mechanism is desired for rotating light polarization with a minimum interaction length. Here, we report giant polarization rotations for terahertz (THz) electromagnetic waves in ultrathin ( ∼ <#comment/> 45 n m ), high-density films of aligned carbon nanotubes. We observed polarization rotations of up to ∼ <#comment/> 20 ∘ <#comment/> and ∼ <#comment/> 110 ∘ <#comment/> for transmitted and reflected THz pulses, respectively. The amount of polarization rotation was a sensitive function of the angle between the incident THz polarization and the nanotube alignment direction, exhibiting a “magic” angle at which the total rotation through transmission and reflection becomes exactly 90°. Our model quantitatively explains these giant rotations as a result of extremely anisotropic optical constants, demonstrating that aligned carbon nanotubes promise ultrathin, broadband, and tunable THz polarization devices.

Baydin, Andrey (ORCID:0000000225673506)↗
DOE OSTI2022

Broadband Solenoidal Haloscope for Terahertz Axion Detection

We introduce the Broadband Reflector Experiment for Axion Detection (BREAD) conceptual design and science program. This haloscope plans to search for bosonic dark matter across the [ 10 - 3 , 1 ] eV ([0.24, 240] THz) mass range. BREAD proposes a cylindrical metal barrel to convert dark matter into photons, which a novel parabolic reflector design focuses onto a photosensor. This unique geometry enables enclosure in standard cryostats and high-field solenoids, overcoming limitations of current dish antennas. A pilot 0.7 m 2 barrel experiment planned at Fermilab is projected to surpass existing dark photon coupling constraints by over a decade with one-day runtime. Axion sensitivity requires < 10 - 20 W / Hz sensor noise equivalent power with a 10 T solenoid and 10 m 2 barrel. We project BREAD sensitivity for various sensor technologies and discuss future prospects.

Liu, Jesse↗
DOE OSTI2022

Ultrafast carrier dynamics in terahertz photoconductors and photomixers: beyond short-carrier-lifetime semiconductors

Abstract Efficient terahertz generation and detection are a key prerequisite for high performance terahertz systems. Major advancements in realizing efficient terahertz emitters and detectors were enabled through photonics-driven semiconductor devices, thanks to the extremely wide bandwidth available at optical frequencies. Through the efficient generation and ultrafast transport of charge carriers within a photo-absorbing semiconductor material, terahertz frequency components are created from the mixing products of the optical frequency components that drive the terahertz device – a process usually referred to as photomixing. The created terahertz frequency components, which are in the physical form of oscillating carrier concentrations, can feed a terahertz antenna and get radiated in case of a terahertz emitter, or mix with an incoming terahertz wave to down-convert to DC or to a low frequency photocurrent in case of a terahertz detector. Realizing terahertz photoconductors typically relies on short-carrier-lifetime semiconductors as the photo-absorbing material, where photocarriers are quickly trapped within one picosecond or less after generation, leading to ultrafast carrier dynamics that facilitates high-frequency device operation. However, while enabling broadband operation, a sub-picosecond lifetime of the photocarriers results in a substantial loss of photoconductive gain and optical responsivity. In addition, growth of short-carrier-lifetime semiconductors in many cases relies on the use of rare elements and non-standard processes with limited accessibility. Therefore, there is a strong motivation to explore and develop alternative techniques for realizing terahertz photomixers that do not rely on these defect-introduced short-carrier-lifetime semiconductors. This review will provide an overview of several promising approaches to realize terahertz emitters and detectors without short-carrier-lifetime semiconductors. These novel approaches utilize p-i-n diode junctions, plasmonic nanostructures, ultrafast spintronics, and low-dimensional materials to offer ultrafast carrier response. These innovative directions have great potentials for extending the applicability and accessibility of the terahertz spectrum for a wide range of applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Coherent terahertz radiation with 2.8-octave tunability through chip-scale photomixed microresonator optical parametric oscillation

High-spectral-purity frequency-agile room-temperature sources in the terahertz spectrum are foundational elements for imaging, sensing, metrology, and communications. Here we present a chip-scale optical parametric oscillator based on an integrated nonlinear microresonator that provides broadly tunable single-frequency and multi-frequency oscillators in the terahertz regime. Through optical-to-terahertz down-conversion using a plasmonic nanoantenna array, coherent terahertz radiation spanning 2.8-octaves is achieved from 330 GHz to 2.3 THz, with ≈20 GHz cavity-mode-limited frequency tuning step and ≈10 MHz intracavity-mode continuous frequency tuning range at each step. By controlling the microresonator intracavity power and pump-resonance detuning, tunable multi-frequency terahertz oscillators are also realized. Furthermore, by stabilizing the microresonator pump power and wavelength, sub-100 Hz linewidth of the terahertz radiation with 10 –15 residual frequency instability is demonstrated. The room-temperature generation of both single-frequency, frequency-agile terahertz radiation and multi-frequency terahertz oscillators in the chip-scale platform offers unique capabilities in metrology, sensing, imaging and communications.

42 ENGINEERING↗
DOE OSTI2025

Efficient on-chip terahertz generation and detection with GaN photoconductive emitters

Photoconductive emitters for terahertz generation hold promise for highly efficient down-conversion of optical photons because it is not constrained by the Manley-Rowe relation. Existing terahertz photoconductive devices, however, faces limits in efficiency due to the semiconductor properties of commonly used GaAs materials. Here, we demonstrate that large bandgap semiconductor GaN, characterized by its high breakdown electric field, facilitates the highly efficient generation of terahertz waves in a coplanar stripline waveguide. Towards this goal, we investigated the excitonic contribution to the electro-optic response of GaN under static electric field both through experiments and first-principles calculations, revealing a robust excitonic Stark shift. Using this electro-optic effect, we developed a novel ultraviolet pump-probe spectroscopy for in-situ characterization of the terahertz electric field strength generated by the GaN photoconductive emitter. Our findings show that terahertz power scales quadratically with optical excitation power and applied electric field over a broad parameter range. We achieved an optical-to-terahertz conversion efficiency approaching 100% within the 0.03–1 THz bandwidth at the highest bias field (116 kV/cm) in our experiment. Further optimization of GaN-based terahertz generation devices could achieve even greater optical-to-terahertz conversion efficiencies.

Uzundal, Can B↗
DOE OSTI2023

Ultrafast snapshots of terahertz electric potentials across ring-shaped quantum barriers

Probing the time evolution of the terahertz electric field within subwavelength dimensions plays a crucial role in observing the nanoscale lightwave interactions with fundamental excitations in condensed-matter systems and in artificial structures, such as metamaterials. Here, we propose a novel probing method for measuring terahertz electric potentials across nanogaps using a combination of optical and terahertz pulse excitations. To achieve this, we employ ring-shaped nanogaps that enclose a metallic island, allowing us to capture tunneling charges when subjected to terahertz electromagnetic pulse illumination. By controlling and manipulating the terahertz tunneling charges through a focused optical gate pulse, we can obtain the terahertz potential strength as a function of spatial coordinates and time delays between pulses. To accurately quantify the time evolution of terahertz electric potential across quantum barriers, we carefully calibrate the recorded nonlinear tunneling current. Its on-resonance and off-resonance behaviors are also discussed, providing valuable insights into the antenna’s characteristics and performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Plasmonic photoconductive terahertz focal-plane array with pixel super-resolution

Abstract Imaging systems operating in the terahertz part of the electromagnetic spectrum are attractive due to their ability to penetrate many opaque materials and provide unique spectral signatures of various chemicals. However, the use of terahertz imagers in real-world applications has been limited by the slow speed, large size, high cost and complexity of present systems, largely due to the lack of suitable terahertz focal-plane array detectors. Here we report a terahertz focal-plane array that can directly provide the spatial amplitude and phase distributions, along with the ultrafast temporal and spectral information of an imaged object. It consists of a two-dimensional array of ~0.3 million plasmonic photoconductive nanoantennas optimized to rapidly detect broadband terahertz radiation with a high signal-to-noise ratio. We utilized the multispectral nature of the amplitude and phase data captured by these plasmonic nanoantennas to image different objects, including super-resolved etched patterns in a silicon substrate and defects in battery electrodes. By eliminating the need for raster scanning and spatial terahertz modulation, our terahertz focal-plane array offers more than a 1,000-fold increase in the imaging speed compared with the state of the art and potentially suits a broad range of applications in industrial inspection, security screening and medical diagnosis, among others.

Optics↗
DOE OSTI2022

Bias-free terahertz generation from a silicon-compatible photoconductive emitter operating at telecommunication wavelengths

Here, we present a telecommunication-compatible bias-free photoconductive terahertz emitter composed of a bilayer InAs structure directly grown on a high-resistivity silicon substrate. The bilayer InAs structure includes p + -doped and undoped InAs layers, inducing a strong built-in electric field that enables terahertz generation without requiring any external bias voltage. A large-area plasmonic nanoantenna array is used to enhance and confine optical generation inside the photoconductive region with the highest built-in electric field, leading to the generation of a strong ultrafast photocurrent and broadband terahertz radiation. Thanks to a higher terahertz transmission through the silicon substrate and a shorter carrier lifetime in the InAs layers grown on silicon, higher signal-to-noise ratios are achieved at high terahertz frequencies compared with previously demonstrated bias-free terahertz emitters realized on GaAs. In addition to compatibility with silicon integrated optoelectronic platforms, the presented bias-free photoconductive emitter provides more than a 6 THz radiation bandwidth with more than 100 dB dynamic range when used in a terahertz time-domain spectroscopy system.

42 ENGINEERING↗
DOE OSTI2023

Terahertz-Driven Local Dipolar Correlation in a Quantum Paraelectric

Light-induced ferroelectricity in quantum paraelectrics is a new avenue of achieving dynamic stabilization of hidden orders in quantum materials. In this Letter, we explore the possibility of driving a transient ferroelectric phase in the quantum paraelectric KTaO 3 via intense terahertz excitation of the soft mode. We observe a long-lived relaxation in the terahertz-driven second harmonic generation (SHG) signal that lasts up to 20 ps at 10 K, which may be attributed to light-induced ferroelectricity. Through analyzing the terahertz-induced coherent soft-mode oscillation and finding its hardening with fluence well described by a single-well potential, we demonstrate that intense terahertz pulses up to 500 kV=cm cannot drive a global ferroelectric phase in KTaO 3 . Instead, we find the unusual long-lived relaxation of the SHG signal comes from a terahertz-driven moderate dipolar correlation between the defect-induced local polar structures. We discuss the impact of our findings on current investigations of the terahertz-induced ferroelectric phase in quantum paraelectrics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

High-throughput terahertz imaging: progress and challenges

Abstract Many exciting terahertz imaging applications, such as non-destructive evaluation, biomedical diagnosis, and security screening, have been historically limited in practical usage due to the raster-scanning requirement of imaging systems, which impose very low imaging speeds. However, recent advancements in terahertz imaging systems have greatly increased the imaging throughput and brought the promising potential of terahertz radiation from research laboratories closer to real-world applications. Here, we review the development of terahertz imaging technologies from both hardware and computational imaging perspectives. We introduce and compare different types of hardware enabling frequency-domain and time-domain imaging using various thermal, photon, and field image sensor arrays. We discuss how different imaging hardware and computational imaging algorithms provide opportunities for capturing time-of-flight, spectroscopic, phase, and intensity image data at high throughputs. Furthermore, the new prospects and challenges for the development of future high-throughput terahertz imaging systems are briefly introduced.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Topology-empowered membrane devices for terahertz photonics

Control of terahertz waves offers a profound platform for next-generation sensing, imaging, and information communications. However, all conventional terahertz components and systems suffer from bulky design, sensitivity to imperfections, and transmission loss. We propose and experimentally demonstrate on-chip integration and miniaturization of topological devices, which may address many existing drawbacks of the terahertz technology. We design and fabricate topological devices based on valley-Hall photonic structures that can be employed for various integrated components of on-chip terahertz systems. We demonstrate valley-locked asymmetric energy flow and mode conversion with topological waveguide, multiport couplers, wave division, and whispering gallery mode resonators. Our devices are based on topological membrane metasurfaces, which are of great importance for developing on-chip photonics and bring many features into terahertz technology.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Efficient photoconductive terahertz detection through photon trapping in plasmonic nanocavities

We present a photoconductive terahertz detector that employs a plasmonic nanocavity to offer high-sensitivity and broadband operation when used in a terahertz time-domain spectroscopy system even at very low optical pump power levels. By employing a plasmonic nanocavity, all of the photocarriers are generated within a 100 nm distance from the photoconductor contact electrodes, enabling a short transport time for almost all of the photogenerated carriers. As a result, the photoconductive detector maintains high quantum efficiency and ultrafast operation simultaneously, enabling high-sensitivity and broadband operation at very low optical pump power levels. We utilize a photoconductive detector based on a plasmonic nanocavity optimized for operation at a 770 nm optical wavelength in a terahertz time-domain spectroscopy system and demonstrate a 100 dB signal-to-noise ratio and a 0.1–6 THz noise-equivalent bandwidth at a record-low average optical pump power of 0.1 mW, compared to the state-of-the-art photoconductive terahertz detectors. The extremely low optical power budget of the demonstrated photoconductive detector makes this detector attractive for multi-pixel terahertz imaging systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Frequency combs in optically injected terahertz ring quantum cascade lasers

Quantum cascade lasers (QCLs) have emerged as promising candidates for generating chip-scale frequency combs in mid-infrared and terahertz wavelengths. In this work, we demonstrate frequency comb formation in ring terahertz QCLs using the injection of light from a distributed feedback (DFB) laser. The DFB design frequency is chosen to match the modes of the ring cavity (near 3.3 THz), and light from the DFB is injected into the ring QCL via a bus waveguide. By controlling the power and frequency of the optical injection, we show that combs can be selectively formed and controlled in the ring cavity. Numerical modeling suggests that this comb is primarily frequency-modulated in character, with the injection serving to trigger comb formation. We also show that the ring can be used as a filter to control the output of the DFB QCL, potentially being of interest in terahertz photonic integrated circuits. Our work demonstrates that waveguide couplers are a compelling approach for injecting and extracting radiation from ring terahertz combs and offer exciting possibilities for the generation of new comb states in terahertz, such as frequency-modulated waves, solitons, and more.

47 OTHER INSTRUMENTATION↗