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Results for “theory, design and simulation of reactors”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2008

Gas Core Reactor Numerical Simulation Using a Coupled MHD-MCNP Model

Analysis is provided in this report of using two head-on magnetohydrodynamic (MHD) shocks to achieve supercritical nuclear fission in an axially elongated cylinder filled with UF4 gas as an energy source for deep space missions. The motivation for each aspect of the design is explained and supported by theory and numerical simulations. A subsequent report will provide detail on relevant experimental work to validate the concept. Here the focus is on the theory of and simulations for the proposed gas core reactor conceptual design from the onset of shock generations to the supercritical state achieved when the shocks collide. The MHD model is coupled to a standard nuclear code (MCNP) to observe the neutron flux and fission power attributed to the supercritical state brought about by the shock collisions. Throughout the modeling, realistic parameters are used for the initial ambient gaseous state and currents to ensure a resulting supercritical state upon shock collisions.

Kazeminezhad, F.↗

NASA NTRS1991

Inverse energy cascades in three-dimensional turbulence

Fully three-dimensional magnetohydrodynamic (MHD) turbulence at large kinetic and low magnetic Reynolds numbers is considered in the presence of a strong uniform magnetic field. It is shown by numerical simulation of a model of MHD that the energy inverse cascades to longer length scales when the interaction parameter is large. While the steady-state dynamics of the driven problem is three-dimensional in character, the behavior has resemblance to two-dimensional hydrodynamics. These results have implications in turbulence theory, MHD power generator, planetary dynamos, and fusion reactor blanket design.

Hossain, Murshed↗

NASA NTRS1998

Predictive Models for Semiconductor Device Design and Processing

The device feature size continues to be on a downward trend with a simultaneous upward trend in wafer size to 300 mm. Predictive models are needed more than ever before for this reason. At NASA Ames, a Device and Process Modeling effort has been initiated recently with a view to address these issues. Our activities cover sub-micron device physics, process and equipment modeling, computational chemistry and material science. This talk would outline these efforts and emphasize the interaction among various components. The device physics component is largely based on integrating quantum effects into device simulators. We have two parallel efforts, one based on a quantum mechanics approach and the second, a semiclassical hydrodynamics approach with quantum correction terms. Under the first approach, three different quantum simulators are being developed and compared: a nonequlibrium Green's function (NEGF) approach, Wigner function approach, and a density matrix approach. In this talk, results using various codes will be presented. Our process modeling work focuses primarily on epitaxy and etching using first-principles models coupling reactor level and wafer level features. For the latter, we are using a novel approach based on Level Set theory. Sample results from this effort will also be presented.

Meyyappan, Meyya↗