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Results for “thermal annealing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Chemical nature of silicon nitride-indium phosphide interface and rapid thermal annealing for InP MISFETs

A rapid thermal annealing (RTA) process in pure N2 or pure H2 was developed for ion-implanted and encapsulated indium phosphide compound semiconductors, and the chemical nature at the silicon nitride-InP interface before and after RTA was examined using XPS. Results obtained from SIMS on the atomic concentration profiles of the implanted silicon in InP before and after RTA are presented, together with electrical characteristics of the annealed implants. Using the RTA process developed, InP metal-insulator semiconductor FETs (MISFETS) were fabricated. The MISFETS prepared had threshold voltages of +1 V, transconductance of 27 mS/mm, peak channel mobility of 1200 sq cm/V per sec, and drain current drift of only 7 percent.

Biedenbender, M. D.↗
NASA NTRS1989

Thermal annealing of GaAs concentrator solar cells

The thermal annealing of GaAs concentrator cells after electron irradiation is reported. Results are given for cells annealed at 150, 200, and 250 C. Isochronal annealing was done for 20 min intervals up to 350 C. For cells irradiated with electrons of energies between 0.7 and 2.3 MeV, the recovery decreases with increasing electron energy. Isothermal and isochronal annealing produce the same recovery. Cells irradiated to 3 x 10 to the 15th or 1 x 10 to the 16th e/sq cm recover to similar unannealed fractions. Significant annealing is seen starting at 150 C, although very long times are required.

Curtis, H. B.↗
NASA NTRS1985

ac susceptibility of thermally annealed and neutron irradiated Cu-Ni alloys

Thermal annealing and high-flux neutron irradiation are used to vary the degree of short-range atomic order in Cu-Ni alloys of composition 40, 50, and 60 at. pct Ni. The magnetic state is measured by ac magnetic susceptibility measurements. It is shown that annealing at 350 C causes significant changes in the susceptibility of all the samples. In the 50 and 60 at. pct Ni samples, the transition is broadened and extended to higher temperatures, while the 40 at. pct Ni sample changes from a paramagnetic system to a weakly ferromagnetic system. The neutron irradiation, in contrast to the thermal treatment, causes the development of smaller size cluster formations. The irradiated 60 at. pct Ni sample exhibits no change in the shape of its susceptibility curve from that of the quenched sample, whereas, the 40 pct alloy is changed, by irradiation, from a paramagnetic system to a spin-glass system.

Catchings, R. M., III↗
NASA NTRS1987

Rapid thermal annealing of indium phosphide compound semiconductors

The rapid thermal annealing (RTA) of indium phosphide (InP) substrates using a proximity contact method and silicon nitride encapsulation is investigated. The surface conditions of the InP substrates following cleaning with procedures A and B are analyzed. Procedure A involves using an iodic acid solution to remove work-damage InP surface layers and B is a degasssing process and hydrofluoric acid solution for native oxide removal. AES, XPS, and SIMS data of the proximity contact and silicon nitride encapsulated annealed samples are examined. The data reveal that RTA using proximity contact with silicon wafers does not provide adequate protection; however, the InP sample is successfully annealed when protected by a silicon nitride encapsulant.

Biedenbender, Michael D.↗
NASA NTRS1981

Activation energies of thermal annealing of radiation-induced damage in n- and p-channels of CMOS integrated circuits. II

The procedures described by Danchenko et al. (1980) are applied to devices of RCA's Z-process (100,000 rad-hard). A thermal annealing investigation of the Z-process reveals an annealing behavior of the p-channels that is anomalous when compared with the p-channels of the commercial and J-processes. It is noted that the thermal annealing-induced shift of the threshold potential extends far below the original value; this necessitated the development of a new mathematical treatment, the treatment presented in the paper.

Danchenko, V.↗
NASA NTRS1987

Raman scattering from rapid thermally annealed tungsten silicide

Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.

Kumar, Sandeep↗
NASA NTRS1982

Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

Danchenko, V.↗
NASA NTRS1980

Effects of thermal annealing on the deep-level defects and I-V characteristics of 200 keV proton irradiated AlGaAs-GaAs solar cells

Detailed characterization of deep-level defects and analysis of dark I-V data in 200 keV proton irradiated AlGaAs-GaAs solar cells have been carried out for several proton fluences (5 x 10 to the 11th, 10 to the 12th, and 10 to the 13th P/sq cm), using DLTS, C-V, and I-V measurement techniques. To study the effect of low temperature thermal annealing on the deep-level defect properties, these irradiated samples were annealed in vacuum at 300 C for one hour. Comparison was then made on the measured defect parameters (i.e., defect energy levels and densities) and the dark I-V characteristics for both the annealed and unannealed samples.

Li, S. S.↗
NASA NTRS1991

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN bipolar junction transistors (BJTs), metal-oxide-semiconductor field effect transistors (MOSFETs), and static induction transistors (SITs) are given. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Postirradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Schwarze, G. E.↗
NASA NTRS1991

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Schwarze, G. E.↗