Thermal Expansion Matched Glass Frits used for Sealing Assemblies for Alpha Detection
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
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Conductive heat spreader and heat sink assembly for optical devices
Matching of coefficient of thermal expansion for heat spreaders and carrier die can facilitate optoelectronic die alignment. In one example, an apparatus comprises a carrier die comprising a first coefficient of thermal expansion, two or more optoelectronic die disposed on the carrier die, and a spreader. The spreader can comprise a second material coefficient of thermal expansion matched to the first coefficient of thermal expansion. Additionally, a thermal interface material is disposed between the spreader and the one or more optoelectronic die.
Doany, Fuad Elias↗
Significantly Promoting the Thermal Conductivity and Machinability of Negative Thermal Expansion Alloy via In Situ Precipitation of Copper Networks
Rapid advancements in electronic devices yield an urgent demand for high-performance electronic packaging materials with high thermal conductivity, low thermal expansion, and great mechanical properties. However, it is a great challenge for current design philosophies to fulfill all the requirements simultaneously. Here, an effective strategy is proposed for significantly promoting the thermal conductivity and machinability of negative thermal expansion alloy (Zr,Nb)Fe 2 through eutectic precipitation of copper networks. The eutectic dual-phase alloy exhibits an isotropic chips-matched thermal expansion coefficient and a thermal conductivity enhancement exceeding 200% compared with (Zr,Nb)Fe 2 , along with an ultimate compressive strength of 550 MPa. The addition of copper reorganizes the composition of (Zr,Nb)Fe 2 , which smooths the magnetic transition and shifts it toward higher temperature, resulting in linear low thermal expansion in a wide temperature range. The highly fine eutectic copper lamellae construct high thermal conductivity networks within (Zr,Nb)Fe 2 , serving as highways for heat transfer electrons and phonons. The in situ forming of eutectic copper lamellae also facilitates the mechanical properties by enhancing interfacial bonding and bearing additional stress after yielding of (Zr,Nb)Fe 2 . This work provides a novel strategy for promoting thermal conductivity and mechanical properties of negative thermal expansion alloys via eutectic precipitation of copper networks.
36 MATERIALS SCIENCE↗
Thermal Management of Discretized Heaters Using CuW Microchannel Heat Sinks and FC3283
Single-phase cooling using microchannel heat sinks (MCHS) has become a popular approach for overcoming the thermal challenges associated with high-powered microelectronic devices. Thermal management is one of the largest barriers to higher power densities in electronics and frequently limits overall device performance. The implementation of forced convective cooling via single-phase liquid cooling in MCHS reduces the thermal resistance resulting in lower device temperatures at high-power conditions, which can decrease the package size and extend the lifespan of devices. The goal of the work described in this article was to investigate practical cooling solutions for laser diode bars. This study examined the effectiveness of a copper tungsten (CuW) microchannel heat sink paired with a dielectric coolant (FC3283) for dissipating both discrete and uniform heat fluxes up to 600 W/cm2 across a 0.25-cm2 surface area through a numerical and experimental study. CuW was chosen as the MCHS material because it is thermal expansion matched to GaAs, which is a common laser diode substrate. FC3283 serves as a dielectric coolant that is compatible with power electronics cooling. The microchannels utilized in this work were approximately $365$ $μ$ m deep and $100$ $μ$ m wide resulting in a hydraulic diameter of $160$ $μ$ m. The study investigated the cooling performance across a variety of applied power loads and flow rates to determine optimal effectiveness. The resulting thermal resistance ranged from 0.15 cm2 K/W at the highest flow rate to 0.26 cm2 K/W at the lowest flow rate. Further, the resulting thermal performance from this study demonstrates the importance of considering discrete heat sources separately from uniform heat sources and proved that the unique combination of CuW microchannels with FC3283 can be a promising cooling option toward future advancements of laser diode bars and other high-power microelectronics.
42 ENGINEERING↗
Carbon Fiber and Polymer Composites
Tooling is an integral part of composites manufacturing. Composite tools, also called ‘soft’ tools, are more easily constructed than ‘hard’ metal tools and, because they are made from materials similar to the manufactured composite part, they can be made in-house and have a good co-efficient of thermal expansion match. However, as the ‘soft’ designation suggests, they are more vulnerable to wear and typically find application in relatively low-volume production. Additive manufacturing of thermoplastics has proven to be a lucrative option that can help improve the tooling functionalities, as it offers more design flexibility. Owing to the inherent nature of additive manufacturing, the possibility of printing sensors within the tool material and at proximity to otherwise inaccessible areas of the tool become a reality. Continuous carbon fiber (CCF)-reinforced three-dimensional (3D) printing of engineering thermoplastics has proven to be a viable option to strengthen a part well beyond the ideal moduli of unmodified thermoplastic. Furthermore, adding nanotubes or graphene to the thermoplastic matrix will also improve both the thermal conductivity and interlaminar shear strength within the tool. Carbon nanotubes (CNTs) and carbon fibers (CFs) are microwave susceptors; exploiting the physics of Joule heating to increase the energy efficiency of tool hardening and cure rates is a core goal of this project. Because of the rapid volumetric heating enabled by the absorption of microwave or radio frequency energy and electromagnetic (EM) annealing presents an attractive opportunity to significantly reduce manufacturing cycle times while improving part performance.
Craps, Matthew G.↗
High temperature thick film sensor development based on doped lanthanum chromites refractory semiconductors materials
High temperature advanced sensing materials have generated high demand due the high accuracy temperature measurements requirements for process optimization, controlling and sensing. Some technological applications of harsh conditions sensing include monitoring tiles of space shuttles, rotating bearings in aircraft engines, turbines, jet engines dynamics and chemical reactors. High temperature conditions limit the sensing strategies, where typically traditional metal thermocouples are unstable, and the sensing options are limited to optical spectroscopy methods. Recently, refractory semiconductors thick- and thin-film thermocouples have been developed and, in many cases, preferred over conventional metallic thermocouples due their spatial resolution, and capability of direct deposition on any surface. Rare earth chromites ceramics materials, exhibit some properties of interest for high temperature sensing technologies development, such as: high microstructure and sintering stability, excellent conductive behavior at high temperatures, and matching thermal expansion coefficients relative to other conductors and refractory ceramics. In this work, high performance ultra-high temperature thermocouples using p-type and n-type doped lanthanum chromites materials were fabricated and tested at temperatures up to 1500 o C. Thermoelectric voltage, Seebeck Coefficients were established for all devices, evidencing high stability and performance in prolongated operational time and harsh conditions.
20 FOSSIL-FUELED POWER PLANTS↗
Group-III nitride devices and systems on IBAD-textured substrates
A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111> oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.
36 MATERIALS SCIENCE↗
Group-III nitride devices and systems on IBAD-textured substrates
A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a <111>oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer. Electronic devices such as LEDs can be manufactured from such structures. Because the substrate can act as both a reflector and a heat sink, transfer to other substrates, and use of external reflectors and heat sinks, is not required, greatly reducing costs. Large area devices such as light emitting strips or sheets may be fabricated using this technology.
Matias, Vladimir↗
High Temperature Thick Film Sensor Development Based on Refractory Oxide Semiconductors
Solid-state, high-temperature sensing devices are required for accurate temperature, strain/stress, and failure monitoring for a range of advanced manufacturing, transportation, and military applications. High temperature conditions limit sensing strategies, where typically traditional metal and semiconductor materials are unstable, and the sensing options are limited to optical spectroscopy methods. In addition, strategies to embed the sensors directly within active components and protective thermal refractory are of interest that permit near-environment sensing which is not possible with the traditional electronic materials and components. Rare-earth chromite semiconductors exhibit some properties of interest for high temperature sensing technologies, such as: high microstructure and chemical stability, relatively high electronic conductivity at high temperatures, and relative thermal expansion coefficient matching to refractory thermal protective insulation (such as high-zirconia and -alumina ceramics). In this work, n-type and p-type doped lanthanum chromites compositions were computationally modelled and prepared, and the electrical, thermoelectric, and thermomechanical properties were measured for the obtained material systems. A few compositions were then processed into thick film health and temperature sensors and tested at high temperatures. To establish relative stability under harsh environment conditions, post- mortem microstructure and chemical composition was characterized after extended and cycle testing at high temperatures.
20 FOSSIL-FUELED POWER PLANTS↗
High Entropy Rare-earth Oxide (HERO) Coatings for Refractory Alloys
The HERO coating was developed to protect refractory alloys for application in the harsh hot section of the turbine engine environment addressing ARPA-E ULTIMATE Project Topic 2: Coating Development. The effort was both innovative in its utilization of high entropy rare earth oxides as well as transformational in our approach: holistic design of a single layer thermal/environmental barrier coating (T/EBC) for refractory alloys, with an excellent coefficient of thermal expansion (CTE) match to the alloy substrate, chemical compatibility with the underlying alloy, low oxidant permeability, stability in combustion environments, low thermal conductivity, thermal shock resistance, and resistance to degradation by siliceous debris (calcium magnesium alumino-silicates-CMAS). The high entropy rare earth oxide approach enables two critical coating properties: tailoring CTE match to the substrate and, most significantly, substantially reduced thermal conductivity. The summation of these proposed coating capabilities goes well beyond the technical requirements specified in the ULTIMATE program objectives, and additionally is essential for a successful first stage turbine blade application.
36 MATERIALS SCIENCE↗
Designing Ta C Virtual Substrates for Vertical Al x Ga 1 − x N Power Electronics Devices
Power electronics are critical for a sustainable energy future, playing a key role in electrification and integration of renewable energy sources into the grid. Advances in ultrawide band gap materials are needed to handle higher powers in smaller form factors while reducing electrical and thermal losses. High Al content Al x Ga 1 − x N is theoretically capable of meeting these demands, but its impact in power electronics has been severely restricted by a lack of substrates that can satisfy conductivity, lattice matching, and/or thermal expansion requirements. We demonstrate that electrically conductive Ta C can be used as a virtual substrate for Al x Ga 1 − x N heteroepitaxy. Scaleably sputtered Ta C grown on Al 2 O 3 , followed by high-temperature face-to-face annealing, produces a thin film Ta C template with an effective hexagonal lattice constant matched to Al 0.70 Ga 0.30 N . Annealing of the Ta C promotes recrystallization, significantly improving crystallinity and reducing crystalline defects from as-deposited columnar grains to a step-and-terrace surface morphology, enabling the subsequent growth of high-quality Al 0.70 Ga 0.30 N by molecular beam epitaxy. X-ray diffraction and scanning transmission electron microscopy confirm that the Al x Ga 1 − x N layer is heteroepitaxially aligned, strain-free, and lattice-matched, transitioning abruptly from Ta C to Al x Ga 1 − x N without intermediate phases. These results demonstrate Ta C virtual substrates as electrically conductive, lattice-matched, and thermally compatible templates for vertical Al x Ga 1 − x N devices that can meet the growing power needs of a sustainable energy future. Published by the American Physical Society 2024
36 MATERIALS SCIENCE↗
Superconducting magnesium diboride films for levitation of laser targets
Inertial confinement fusion targets would benefit from being levitated inside hohlraums to avoid capsule support-related implosion perturbations. Levitation inside a magnetic trap requires coating the capsule with a thin film that is superconducting at 20 K. Such non-epitaxial film growth on non-planar substrates is challenging. Here, we study Mg vapor annealing and solid-phase reactive inter-diffusion methods to form superconducting magnesium diboride (MgB 2 ) films on different planar and spherical carbon substrates, evaluating glassy carbon, polycrystalline diamond made by chemical vapor deposition, and carbon deposited by magnetron sputtering of graphite targets. Thin films of B and Mg are produced by magnetron sputtering onto stationary planar or rolling spherical substrates and annealed at either 600 or 850 °C in Mg vapor. The films are characterized by a combination of high-energy ion scattering, electron microscopy, and magnetometry. Results show that the critical superconducting temperature of resultant films depends on film microstructure and oxygen impurity content. The formation of MgB 2 films is also strongly substrate dependent, even in this case of non-epitaxial growth. Important factors to consider are oxygen outgassing of the substrate during thermal processing, substrate surface roughness, and the matching of thermal expansion coefficients of different layers in the multilayer structure.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Mechanically-, Thermally, and Chemically-Robust High-Temperature Ceramic Composites
In an effort to lower the levelized cost of electricity generated by Concentrated Solar Power (CSP) plants, the heat-to-electricity conversion efficiency may be increased by operating such plants with higher turbine inlet temperatures using closed Brayton cycles with high-pressure, supercritical carbon dioxide (sCO 2 ) as the working fluid. For example, if the turbine inlet temperature is raised to ≥750°C, in combination with sCO2 closed Brayton cycles, the relative heat-to-electricity efficiency may be raised by more than 20% (compared to subcritical steam Rankine cycles operating with turbine inlet temperatures ≤550°C). The associated reduction in the cost of dispatchable electricity from such CSP plants (utilizing high-temperature thermal energy storage) would be an important breakthrough on the path towards direct competition with fossil-fuel-based plants. A key barrier to achieve such high-temperature efficient operation has been the limited thermomechanical performance of metal alloys used in compact, primary printed circuit- type heat exchangers (PCHEXs) for heat transfer to high-pressure sCO 2 . The maximum allowed stresses for the use of conventional stainless steels and nickel-based superalloys at high sCO 2 pressures (≥20 MPa) decline rapidly at temperatures ≥550°C. This project has been focused on demonstrating the desired high-temperature properties and attractive manufacturing characteristics of mechanically-, thermally-, and chemically-robust ceramic/metal composites (cermets), in order to allow for the use of such composites in primary PCHEXs for heat transfer to sCO 2 at ≥750°C and ≥20 MPa in CSP plants. Prior work with high-temperature, co-continuous carbide/refractory metal cermets, such as ZrC/W composites, has already demonstrated: i) the attractive combination of high-temperature properties exhibited by such materials (e.g., high values of stiffness, failure strength, and thermal conductivity at 800°C), and ii) cost-effective processes for manufacturing PCHEX plates comprised of such cermets with tailorable channel patterns. However, ZrC/W cermets were not found to be inherently corrosion resistant in sCO 2 at 750°C and 20 MPa. While the application of a Cu coating to ZrC/W surfaces, along with a modest addition (50 ppm) of CO to CO 2 , rendered such composites resistant to corrosion for 1000 h in such sCO 2 -based fluids at 750°C, such additional steps would increase the design complexity of such cermet-based components. An alternative approach (the focus of this project) is to develop mechanically-robust, cost- effective cermets that are inherently resistant to high-temperature oxidation in air and CO 2 . The overall goals of this project have been to demonstrate: i) the oxidation resistance of at least one cermet at 750°C in air and in CO 2 (i.e., with a projected annual corrosion ≤30 μm), ii) the mechanically robust nature of at least one cermet at 750°C (i.e., with an average failure strength ≥200 MPa), and iii) that the selected cermet can be manufactured via low-cost forming techniques.
14 SOLAR ENERGY↗
Highly-Conductive and Durable SOFC Cathode-Side Contact Based on Reactively-Sintered Mn-Co Spinel
A cathode-side contact layer with well-matched coefficient of thermal expansion is needed to prevent cracking of solid oxide fuel cell stacks from thermal cycling during stack operations. An Mn 1.25 Co 1.75 O 4 (MCO) spinel layer synthesized via reactive sintering with a metal-containing precursor was proposed as a highly conductive and durable contact material. Compared to the interconnect/contact/cathode assemblies with the (La 0.80 Sr 0.20 ) 0.95 MnO 3-x and La(Mn 0.45 Co 0.35 Cu 0.2 )O 3 contacts, the assembly with the MCO contact exhibited the lowest area-specific resistance at 800 °C (8.2 mΩ·cm 2 ) during 2000-h cyclic exposure and was crack-free based on the cross-sectional examination, indicative of the superiority of the spinel contact over the perovskite counterparts.
Electrochemistry↗
Remote Epitaxial Growth of Compound Semiconductors through Graphene
Epitaxial growth has been widely used for high-quality growth of crystalline materials. However, epitaxial growth techniques usually require lattice match and similar thermal expansion coefficient between growth material and substrate, which blocks this growth technique from wide applicability. Recently, van der Waals (vdW) epitaxy has been demonstrated that allows to relax the limitation of epitaxial growth. vdW epitaxy on layered or two-dimensional (2D) materials is mediated by weak vdW interactions. In addition to these interactions, a substrate below 2D materials also plays a role to intervene in the epitaxial growth process, leaving room to realize a novel epitaxial growth process: remote epitaxy. Potential fluctuation—the difference between potential energy maxima and minima along the surface of the substrate—is influenced by this remote interaction; the fluctuation is predominant over the vdW force, due to the atomic thickness of 2D materials. The remote interactions can be controlled by modulation of polarities of 2D materials and epitaxy materials. Polar-material-based heterostructure, such as GaAs, InP, GaP and GaN with their substrate sandwiching 2D materials, enables the semiconductor film to be exfoliated from the underlying substrates through the 2D materials. This process is expected to open a novel avenue for the field of non-silicon electronics and photonics, where the ability to re-use graphene-coated substrates allows savings on the high cost of non-silicon substrates.
Lee, Kyusang↗
Computational Design of Cost-Effective High-Entropy Thermal/Environmental Barrier Coatings
Developing cost-effective thermal/environmental barrier coatings (TEBC) requires balance among various properties including low thermal conductivity, matching coefficient of thermal expansion (CTE), high thermal stability, high fracture toughness, and high recession resistance while being affordable. Low oxygen diffusivity is desirable as it can slow down oxygen transport to reach the underlying bond coating and hence delay oxidation of the bond coating. This project aims to design low-cost high-performance TEBC based on high entropy rare earth disilicates to protect SiC-based ceramic matrix composites from chemical and thermal attack for better performance of components in the hot section of gas turbine engines. To accelerate the TEBC design, we utilize first-principles density functional theory to predict key properties including phase stability, CTE, lattice thermal conductivity, temperature-dependent elastic constants, and oxygen diffusivity. Alloying elements including Yb, Y, Er, Eu, Gd, Lu, La, and Ce are considered, and modeling prediction are compared with available experimental results.
coefficient of thermal expansion↗
The Detection of Monoclinic Zirconia and Non-Uniform 3D Crystallographic Strain in a Re-Oxidized Ni-YSZ Solid Oxide Fuel Cell Anode
The solid oxide fuel cell (SOFC) anode is often composed of nickel (Ni) and yttria-stabilized zirconia (YSZ). The yttria is added in small quantities (e.g., 8 mol %) to maintain the crystallographic structure throughout the operating temperatures (e.g., room-temperature to >800 °C). The YSZ skeleton provides a constraining structural support that inhibits degradation mechanisms such as Ni agglomeration and thermal expansion miss-match between the anode and electrolyte layers. Within this structure, the Ni is deposited in the oxide form and then reduced during start-up; however, exposure to oxygen (e.g., during gasket failure) readily re-oxidizes the Ni back to NiO, impeding electrochemical performance and introducing complex structural stresses. In this work, we correlate lab-based X-ray computed tomography using zone plate focusing optics, with X-ray synchrotron diffraction computed tomography to explore the crystal structure of a partially re-oxidized Ni/NiO-YSZ electrode. These state-of-the-art techniques expose several novel findings: non-isotropic YSZ lattice distributions; the presence of monoclinic zirconia around the oxidation boundary; and metallic strain complications in the presence of variable yttria content. This work provides evidence that the reduction–oxidation processes may destabilize the YSZ structure, producing monoclinic zirconia and microscopic YSZ strain, which has implications upon the electrode’s mechanical integrity and thus lifetime of the SOFC.
25 ENERGY STORAGE↗
Effect of Off-Stoichiometry on Electrical Conductivity in Ni-Fe and Mn-Co Spinel Systems
This study seeks to clarify the effects of off-stoichiometry on the electrical conductivity of spinels in the (Ni,Fe) 3 O 4 and (Mn,Co) 3 O 4 systems. Spinels with the compositions Ni x Fe 3–x O 4 (where x = 0.85, 0.875, 0.9, 1.0, 1.05, and 1.15) and Mn x Co 3–x O 4 (where x = 1.0, 1.2, 1.35, 1.5, 1.75, and 2.0) were prepared using conventional solid-state process. Electrical conductivity measurements were taken between 500 °C and 800 °C using the 4-point DC method. The conductivity in Ni-Fe spinels increased with increasing Fe content. Similarly, the conductivity of Mn-Co spinels increased drastically with increasing Co content. The coefficients of thermal expansion (CTEs) of these samples were also evaluated. All the (Ni,Fe) 3 O 4 spinels were found to exhibit excellent CTE matching with prospective stack components. However, thermal expansion characteristics were highly dependent on the composition in the (Mn,Co) 3 O 4 system, and only a narrow range of compositions was well-matched in CTE with prospective stack components. The significant effect of cation off-stoichiometry and sample preparation on the electrical behavior of spinels was discussed as a possible explanation for the large discrepancies in reported conductivity values for both systems.
08 HYDROGEN↗