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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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6 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Thermionic microwave gun for terahertz and synchrotron light sources

Conventional thermionic microwave and radiofrequency (RF) guns can offer high average beam current, which is important for synchrotron light and terahertz (THz) radiation source facilities, as well as for industrial applications. For example, the Advanced Photon Source at Argonne National Laboratory is a national synchrotron radiation light source research facility that utilizes thermionic RF guns. Yet, these existing thermionic guns are bulky, difficult to handle and install, easily detuned, very sensitive to thermal expansion, and are due for a major upgrade and replacement. Here, we present the design of a new, more stable and reliable gun with optimized electromagnetic performance, improved thermal engineering and a more robust cathode mounting technique, which is a critical step to improve the performance of existing and future light sources, industrial accelerators, and electron beam-driven terahertz sources. We will also present a fabricated gun prototype and show results of high-power and beam tests.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Gridded RF Gun Design for SRF Linac Applications

The thermionic gridded gun is described which generates short electron bunches for further acceleration in a Nb3Sn conduction cooled SRF linac. The gun is built into the first cavity of the 250 keV injector [1] for the 20 kW, 10 MeV, 1.3 GHz CW conduction cooled one-cavity linac. The beam current is 2 mA. The RF gun design is presented as well as the results of perveance measurements, which are in a good agreement with the design parameters. The design of the RF resonator of the gun is presented also. The beam generated by the gun is matched to the injector to provide lack of current interception in the SRF cavity.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

Cathode Side-emission Mitigation for Linear Induction Accelerators

Linear induction accelerators (LIAs) are one of the main technologies used in creating flash x-rays used for diagnosing hydrodynamic experiments. The quality of the data produced in these experiments is dependent on the dose of x-rays generated via bremsstrahlung radiation. There are several electron beam quantities that effect the amount of dose extracted from the bremsstrahlung radiation, such as beam instabilities, corkscrew motion, and beam emittance. Injector design is key in delivering well-behaved electron beams to the accelerator, and design choices include components such as anode-cathode (AK) gap dimensions based on required voltage and current, shroud shaping, and cathode type and composition. Thermionic cathodes have shown reliable performance in electron emission, however, if enough of the cathode side is subject to high-enough electric field values, electrons can be emitted. This issue is more likely to happen when the cathode is treated with materials that have lower work functions, which is common for cathodes used in LIAs. These extra electrons can work their way through the rest of the beam, inducing high non-linearities in phase space which can increase the emittance of this beam. In this paper we outline conducted trade-space studies where we examined different shaping parameters of the cathode shroud design to decrease the effect side electrons may have on the beam emittance. Particle trajectories are determined by electric potential contours across the face of the cathode shroud component, and so we hypothesize that the proper shaping of the cathode-shroud interface can tune the electric field to mitigate the effect of side electrons. Electron beam transport is simulated down the length of the injector and the beam quality is diagnosed by studying the emittance as a function of position. Acceptable emittance increase is recorded and noted to meet radiographic requirements.

42 ENGINEERING↗
DOE OSTI2024

GRIDDED RF GUN DESIGN FOR SRF LINAC APPLICATIONS

The thermionic gridded gun is described which gener-ates short electron bunches for further acceleration in a Nb3Sn conduction cooled SRF linac. The gun is built into the first cavity of the 250 keV injector [1] for the 20 kW, 10 MeV, 1.3 GHz CW conduction cooled one-cavity linac. The beam current is 2 mA. The RF gun design is presented as well as the results of perveance measure-ments, which are in a good agreement with the design parameters. The design of the RF resonator of the gun is presented also. The beam generated by the gun is matched to the injector to provide lack of current inter-ception in the SRF cavity.

Gonin, I.↗
DOE OSTI2024

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.

Electroluminescence↗
DOE OSTI2024

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

The efficiency of operation of GaN-based light emitting diodes (LEDs) to a large degree relies on realization of a uniform hole distribution between multiple quantum wells (QWs) of the active region. Since the direct thermionic transport between the QWs is inefficient, the hole injection through semipolar {$10\bar{1}1$} QWs that form on the facets of V-defects has been suggested as an alternative approach. However, for an efficient LED operation, the carrier distribution should be uniform not only vertically, between the QWs but also laterally, within individual QWs. In this work, the lateral carrier distribution in long wavelength InGaN/GaN QW LEDs is studied by the scanning near-field optical microscopy. The measurements have shown that emission is concentrated around the V-defect injectors. At high currents, the diffusion length of holes in polar QWs was found to be ∼0.6–1 μm and the hole diffusion coefficient ∼0.6 cm 2 /s. The obtained data should aid design of the V-defect injectors for a laterally uniform carrier distribution in the active region QWs.

Current crowding↗