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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

A practical field guide to thermoelectrics: Fundamentals, synthesis, and characterization

The study of thermoelectric materials spans condensed matter physics, materials science and engineering, and solid-state chemistry. The diversity of the participants and the inherent complexity of the topic mean that it is difficult, if not impossible, for a researcher to be fluent in all aspects of the field. This review, which grew out of a one-week summer school for graduate students, aims to provide an introduction and practical guidance for selected conceptual, synthetic, and characterization approaches and to craft a common umbrella of language, theory, and experimental practice for those engaged in the field of thermoelectric materials. This review does not attempt to cover all major aspects of thermoelectric materials research or review state-of-the-art thermoelectric materials. Rather, the topics discussed herein reflect the expertise and experience of the authors. We begin by discussing a universal approach to modeling electronic transport using Landauer theory. The core sections of the review are focused on bulk inorganic materials and include a discussion of effective strategies for powder and single crystal synthesis, the use of national synchrotron sources to characterize crystalline materials, error analysis, and modeling of transport data using an effective mass model, and characterization of phonon behavior using inelastic neutron scattering and ultrasonic speed of sound measurements. The final core section discusses the challenges faced when synthesizing carbon-based samples and the measuring or interpretation of their transport properties. We conclude this review with a brief discussion of some of the grand challenges and opportunities that remain to be addressed in the study of thermoelectrics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Microstructure investigations of Yb- and Bi-doped Mg{sub 2}Si prepared from metal hydrides for thermoelectric applications

Within the field of thermoelectric materials for energy conversion magnesium silicide, Mg{sub 2}Si, is an outstanding candidate due to its low density, abundant constituents and low toxicity. However electronic and thermal tuning of the material is a required necessity to improve its Figure of Merit, zT. Doping of Yb via reactive YbH{sub 2} into the structure is performed with the goal of reducing the thermal conductivity. Hydrogen is released as a by-product at high temperatures allowing for facile incorporation of Yb into the structure. We report on the properties of Yb- and Bi-doped Mg{sub 2}Si prepared with MgH{sub 2} and YbH{sub 2} with the focus on the synthetic conditions, and samples’ microstructure, investigated by various electron microscopy techniques. Yb is found in the form of both Yb{sub 3}Si{sub 5} inclusions and Yb dopant segregated at the grain boundary substituting for Mg. The addition of 1 at% Yb concentration reduced the thermal conductivity, providing a value of 30 mW/cm K at 800 K. In order to adjust carrier concentration, the sample is additionally doped with Bi. The impact of the microstructure on the transport properties of the obtained material is studied. Idealy, the reduction of the thermal conductivity is achieved by doping with Yb and the electronic transport is adjusted by doping with Bi. Large grain microstructure facilitates the electronic transport. However, the synthetic conditions that provide the optimized microstructure for electrical transport do not facilitate the additional Yb dopant incorporation. Therefore, the Yb and Bi containing sample with the optimized microstructure provides a zT=0.46 at 800 K. - Graphical abstract: 1% or less addition of YbH{sub 2} to Mg{sub 2}Si significantly reduces the thermal conductivity of the material. Yb replaces some Mg in Mg{sub 2}Si and the remainder is distributed as Yb{sub 3}Sb{sub 5} in the Yb-doped Mg{sub 2}Si matrix. Correlation between the observed grain size and transport show the difficulty in simultaneously reducing the thermal conductivity with optimal electronic properties.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Metal phosphides as potential thermoelectric materials

We report there still exists a crucial need for new thermoelectric materials to efficiently recover waste heat as electrical energy. Although metal phosphides are stable and can exhibit excellent electronic properties, they have traditionally been overlooked as thermoelectrics due to expectations of displaying high thermal conductivity. Based on high-throughput computational screening of the electronic properties of over 48000 inorganic compounds, we find that several metal phosphides offer considerable promise as thermoelectric materials, with excellent potential electronic properties (e.g. due to multiple valley degeneracy). In addition to the electronic band structure, the phonon dispersion curves of various metal phosphides were computed indicating low-frequency acoustic modes that could lead to low thermal conductivity. Several metal phosphides exhibit promising thermoelectric properties. The computed electronic and thermal properties were compared to experiments to test the reliability of the calculations indicating that the predicted thermoelectric properties are semi-quantitative. As a complete experimental study of the thermoelectric properties in MPs, cubic-NiP2 was synthesized and the low predicted lattice thermal conductivity (~1.2 W m -1 K -1 at 700 K) was confirmed. The computed Seebeck coefficient is in agreement with experiments over a range of temperatures and the phononic dispersion curve of c-NiP 2 is consistent with the experimental heat capacity. Finally, the predicted high thermoelectric performance in several metal phosphides and the low thermal conductivity measured in NiP 2 encourage further investigations of thermoelectric properties of metal phosphides.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Enhanced Thermoelectric Properties for PEDOT:PSS/Undoped Ge Thin-Film Bilayered Heterostructures

Modulation doping is one of the strategies to improve thermoelectric power factors of nanocomposites and thin-film bilayered heterostructures by effectively increasing electrical conductivity. Here, it is reported that thin-film heterostructures of heavily doped p-type organic conducting polymer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and undoped thin-film Ge can enhance thermoelectric power factor by modulation doping. The maximum power factor and Seebeck coefficient of the bilayered heterostructures are 154 µW m -1 K -2 and 398 µV K -1 , respectively, corresponding to 47-fold and 41-fold increases compared to those of bulk PEDOT:PSS and 64-fold increase compared to power factor of undoped Ge. The enhancements in power factor and Seebeck coefficient are quantitatively described by the hole transfer from PEDOT:PSS to Ge, which takes into account the band alignment at the interface detected by Kraut's method. Agreement between the simulation and experiment results also implies predictability of thermoelectric performances of nanoscale bilayered heterostructures in general, when band offset, Fermi level, and individual electronic properties are available. This work can be further extended to predict performance of other nanoscale combinations of thermoelectric and other electronic materials in general.

charge transport↗
DOE OSTI2018

Comparison of the electronic and thermoelectric properties of three layered phases Bi 2 Te 3 , PbBi 2 Te 4 and PbBi 4 Te 7 : LEGO thermoelectrics

The electronic and thermoelectric properties of Bi 2 Te 3 , PbBi 2 Te 4 and PbBi 4 Te 7 were examined on the basis of density functional theory (DFT) calculations and thermoelectric transport property measurements. The layered phase PbBi 4 Te 7 is composed of the slabs forming the layered phases Bi 2 Te 3 and PbBi 2 Te 4 . The electronic structure of PbBi 4 Te 7 around the valence band maximum and conduction band minimum exhibits those of Bi 2 Te 3 and PbBi 2 Te 4 . The band gap of PbBi 4 Te 7 lies in between those of Bi 2 Te 3 and PbBi 2 Te 4 , and the density of states of PbBi 4 Te 7 is well approximated by the sum of those of Bi2Te3 and PbBi 2 Te 4 . In terms of the carrier concentration, the carrier mobility, the carrier lifetime, the electrical conductivity normalized to the carrier lifetime, and the effective mass, the layered phases Bi 2 Te 3 , PbBi 2 Te 4 and PbBi 4 Te 7 form a group of thermoelectrics, which have the structures composed of several different slabs and whose thermoelectric properties are approximated by the average of those of the constituent slabs. We propose to use the term “LEGO thermoelectrics” to describe such a family of thermoelectric materials that operate in a desired temperature range and possess predictable thermoelectric properties.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Thermoelectric power generation: from new materials to devices

Thermoelectric technology offers the opportunity of direct conversion between heat and electricity, and new and exciting materials that can enable this technology to deliver higher efficiencies have been developed in recent years. This mini-review covers the most promising advances in thermoelectric materials as they pertain to their potential in being implemented in devices and modules with an emphasis on thermoelectric power generation. Classified into three groups in terms of their operating temperature, the thermoelectric materials that are most likely to be used in future devices are briefly discussed. Here, we summarize the state-of-the-art thermoelectric modules/devices, among which nanostructured PbTe modules are particularly highlighted. At the end, key issues and the possible strategies that can help thermoelectric power generation technology move forward are considered.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2018

High thermoelectric performance in Bi 0.46 Sb 1.54 Te 3 nanostructured with ZnTe

Defect engineering and nano-structuring are the core stratagems for improving thermoelectric properties. In bismuth telluride alloys nanosizing individual crystallites has been extensively studied in efforts to reduce the thermal conductivity, but nanostructuring with second phases has been more challenging. In this study, we demonstrate a thermoelectric figure of merit ZT of 1.4 at 400 K, realized in Zn-containing BiSbTe alloys (specifically Bi 0.46 Sb 1.54 Te 3 ) by integrating defect complexity with nanostructuring. We have succeeded in creating nanostructured BiSbTe alloys containing ZnTe nanoprecipitates. We present a melt-spinning-based synthesis that forms in situ ZnTe nanoprecipitates to produce an extremely low lattice thermal conductivity of ~0.35 W m –1 K –1 at 400 K, approaching the amorphous limit in the Bi 2–x Sb x Te 3 system, while preserving the high power factor of Bi 0.46 Sb 1.54 Te 3 . These samples show excellent repeatability and thermal stability at temperatures up to 523 K. DFT calculations and experimental results show that Zn is inclined to form dual site defects, including two substitutional defects ZnBi/Sb' and a Te vacancy, to achieve full charge compensation, which was further explicitly corroborated by Positron annihilation measurement. The strong enhancement of thermoelectric properties was validated in a thermoelectric module fabricated with the melt-spun p-legs (ZnTe-nanostructured BiSbTe) and zone-melt n-legs (conventional BiTeSe) which achieved a thermoelectric conversion efficiency of 5.0% when subjected to a temperature gradient of 250 K, representing about 40% improvement compared with a commercial zone-melt-based module. Furthermore, the results presented here represent a significant step forward for applications in thermoelectric power generation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermoelectric materials based on tetrahedrite structure for thermoelectric devices

Thermoelectric materials based on tetrahedrite structures for thermoelectric devices and methods for producing thermoelectric materials and devices are disclosed. The thermoelectric device has a pair of conductors and a p-type thermoelectric material disposed between the conductors. The thermoelectric material is at least partially formed of a hot pressed high energy milled tetrahedrite formed of tetrahedrite ore and pure elements to form a tetrahedrite powder of Cu12-xMxSb4S13 disposed between the conductors, where M is at least one of Zn and Fe.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Computational strategies for design and discovery of nanostructured thermoelectrics

Abstract The contribution of theoretical calculations and predictions in the development of advanced high-performance thermoelectrics has been increasingly significant and has successfully guided experiments to understand as well as achieve record-breaking results. In this review, recent developments in high-performance nanostructured bulk thermoelectric materials are discussed from the viewpoint of theoretical calculations. An effective emerging strategy for boosting thermoelectric performance involves minimizing electron scattering while maximizing heat-carrying phonon scattering on many length scales. We present several important strategies and key examples that highlight the contributions of first-principles-based calculations in revealing the intricate but tractable relationships for this synergistic optimization of thermoelectric performance. The integrated optimization approach results in a fourfold design strategy for improved materials: (1) a significant reduction of the lattice thermal conductivity through multiscale hierarchical architecturing, (2) a large enhancement of the Seebeck coefficient through intramatrix electronic band convergence engineering, (3) control of the carrier mobility through band alignment between the host and second phases, and (4) design of intrinsically low-thermal-conductivity materials by maximizing vibrational anharmonicity and acoustic-mode Gruneisen parameters. These combined effects serve to enhance the power factor while reducing the lattice thermal conductivity. This review provides an improved understanding of how theory is impacting the current state of this field and helps to guide the future search for high-performance thermoelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Pd 2 Se 3 Monolayer: A Promising Two-Dimensional Thermoelectric Material with Ultralow Lattice Thermal Conductivity and High Power Factor

A high power factor and low lattice thermal conductivity are two essential ingredients of highly efficient thermoelectric materials. Although monolayers of transition-metal dichalcogenides possess high power factors, high lattice thermal conductivities significantly impede their practical applications. Our first-principles calculations show that these two ingredients are well fulfilled in the recently synthesized Pd 2 Se 3 monolayer, whose crystal structure is composed of [Se 2 ] 2- dimers, Se 2- anions, and Pd 2+ cations coordinated in a square-planar manner. Our detailed analysis of third-order interatomic force constants reveals that the anharmonicity and soft phonon modes associated with covalently bonded [Se 2 ] 2- dimers lead to ultralow lattice thermal conductivities in Pd 2 Se 3 monolayers (1.5 and 2.9 W m -1 K -1 along the a- and b-axes at 300 K, respectively), which are comparable to those of high-performance bulk thermoelectric materials such as PbTe. Moreover, the “pudding-mold” type band structure, caused by Pd 2+ (d 8 ) cations coordinated in a square-planar crystal field, leads to high power factors in Pd 2 Se 3 monolayers. Consequently, both electron- and hole-doped thermoelectric materials with a considerably high zT can be achieved at moderate carrier concentrations, suggesting that Pd 2 Se 3 is a promising two-dimensional thermoelectric material. Our results suggest that hierarchical chemical bonds, that is, coexistence of different types of chemical bonds, combined with a square-planar crystal field is a promising route for designing high-efficiency thermoelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2019

High Thermoelectric Performance in PbSe–NaSbSe 2 Alloys from Valence Band Convergence and Low Thermal Conductivity

PbSe is an attractive thermoelectric material due to its favorable electronic structure, high melting point, and lower cost compared to PbTe. Herein, the hitherto unexplored alloys of PbSe with NaSbSe 2 (NaPb m SbSe m+2 ) are described and the most promising p-type PbSe-based thermoelectrics are found among them. Surprisingly, it is observed that below 500 K, NaPb m SbSe m+2 exhibits unorthodox semiconducting-like electrical conductivity, despite possessing degenerate carrier densities of ≈10 20 cm -3 . Here, it is shown that the peculiar behavior derives from carrier scattering by the grain boundaries. It is further demonstrated that the high solubility of NaSbSe 2 in PbSe augments both the thermoelectric properties while maintaining a rock salt structure. Namely, density functional theory calculations and photoemission spectroscopy demonstrate that introduction of NaSbSe 2 lowers the energy separation between the L- and Σ-valence bands and enhances the power factors under 700 K. The crystallographic disorder of Na + , Pb 2+ , and Sb 3+ moreover provides exceptionally strong point defect phonon scattering yielding low lattice thermal conductivities of 1–0.55 W m -1 K -1 between 400 and 873 K without nanostructures. As a consequence, NaPb 10 SbSe 12 achieves maximum ZT ≈1.4 near 900 K when optimally doped. More importantly, NaPb 10 SbSe 12 maintains high ZT across a broad temperature range, giving an estimated record ZT avg of ≈0.64 between 400 and 873 K, a significant improvement over existing p-type PbSe thermoelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Absence of Nanostructuring in NaPb m SbTe m+2 : Solid Solutions with High Thermoelectric Performance in the Intermediate Temperature Regime

Thermoelectric devices directly convert heat into electrical energy and are highly desired for emerging applications in waste heat recovery. Currently, PbTe based compounds are the leading thermoelectric materials in the intermediate temperature regime (~800 K); however, integration into commercial devices has been limited. This is largely because the performance of PbTe, which is maximized ~900 K, is too low over the temperatures of interest for most potential commercial applications (generally under 600 K). Improving the low temperature performance of PbTe based materials is therefore critical to achieve usage outside of existing niche applications. Here, we provide an in-depth study of the cubic NaPb m SbTe m+2 system of compounds (m = 1-20) and report that it is an excellent class of low- to medium-temperature thermoelectrics when m = 10-20. Here, we show that the as-cast polycrystalline ingots exhibit degenerate p-type conduction and high maximum ZTs of 1.2-1.4 at 650 K when m = 6-20. Because the ingots are found to be extremely brittle, we utilize spark plasma sintering (SPS) to prepare more mechanically robust samples, and surprisingly, find that SPS results in an undesired change in charge transport toward n-type behavior. We show this unanticipated transition from p-type behavior as ingots to n-type after SPS is due to dissolution of secondary phases that are present in the ingots into the primary matrix during the SPS process, resulting in a transformation from an inhomogeneous state to a solid solution without any observable evidence of nanoscale precipitation. This is in sharp contrast to the seemingly similar AgPb m SbTe m+2 (LAST) system, which is heavily nanostructured. The SPSed NaPb m SbTe m+2 is doped p-type by tuning the cation stoichiometry, i.e., Na 1+x Pb m-x Sb 1-y Te m+2 . The optimized compounds have very low lattice thermal conductivities of 1.1-0.55 W·m -1 ·K -1 over 300-650 K, which enhances the low intermediate temperature performance and gives rise to maximum ZT values up to 1.6 at 673 K as well as an excellent ZT avg of 1.1 over 323-673 K for m = 10, 20, making Na 1+x Pb m-x Sb 1-y Te m+2 among the highest performing PbTe-based thermoelectrics under 650 K.

Electrical conductivity↗
DOE OSTI2017

Giant Pressure-Induced Enhancement of Seebeck Coefficient and Thermoelectric Efficiency in SnTe

The thermoelectric properties of polycrystalline SnTe have been measured up to 4.5 GPa at 330 K. SnTe shows an enormous enhancement in Seebeck coefficient, greater than 200 % after 3 GPa, which correlates to a known pressure-induced structural phase transition that is observed through simultaneous in situ X-ray diffraction measurement. Electrical resistance and relative changes to the thermal conductivity were also measured, enabling the determination of relative changes in the dimensionless figure of merit (ZT), which increases dramatically after 3 GPa, reaching 350 % of the lowest pressure ZT value. The results demonstrate a fundamental relationship between structure and thermoelectric behaviours and suggest that pressure is an effective tool to control them.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗