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Thermoelectric properties of Co(x)Ni(4-x)Sb(12-y)Sn(y) ternary skutterudites
Thermoelectric materials based on the skutterudite crystal structure have demonstrated enhanced performance (ZT greater than 1), along with good thermal stability and favorable mechanical properties. Binary skutterudites, with single and multiple fillers, have been intensively studied in recent years. Compared to binary skutterudites, the ternary systems have received less attention, e.g. Ni4Sb8Sn4. Ternary skutterudites are isoelectronic variants of binary skutterudites; cation substitutions appear to be isostructural to their binary analogues. In general, ternary skutterudites exhibit lower thermal conductivity. Ternary systems of Ni4Bi8Ge4, Ni4Sb8Ge4, and Ni4Sb8Sn4 were investigated using combined solidification and sintering steps. Skutterudite formation was not achieved in the Ni4Bi8Ge4 and Ni4Sb8Ge4 systems; skutterudite formation occurred in Ni4Sb8Sn4 system. P-type material was achieved by Co substitution for Ni. Thermoelectric properties were measured from 298 K to 673 K for Ni4Sb8Sn4, Ni4 Sb7Sn5 and Co2Ni2Sb7Sn5. N-type Ni4Sb8Sn4 exhibit the highest figure of merit of 0.1 at 523 K.
Thermoelectric materials with filled skutterudite structure for thermoelectric devices
A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.
Thermoelectric materials with filled skutterudite structure for thermoelectric devices
A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.
Thermoelectric Materials with Skutterudite Structure: New Results
Skutterudite semiconductors possess attractive transport properties and have a good potential for.
Aerogels for Thermal Insulation of Thermoelectric Devices
Silica aerogels have been shown to be attractive for use as thermal-insulation materials for thermoelectric devices. It is desirable to thermally insulate the legs of thermoelectric devices to suppress lateral heat leaks that degrade thermal efficiency. Aerogels offer not only high thermal- insulation effectiveness, but also a combination of other properties that are especially advantageous in thermoelectric- device applications. Aerogels are synthesized by means of sol-gel chemistry, which is ideal for casting insulation into place. As the scale of the devices to be insulated decreases, the castability from liquid solutions becomes increasingly advantageous: By virtue of castability, aerogel insulation can be made to encapsulate devices having any size from macroscopic down to nanoscopic and possibly having complex, three-dimensional shapes. Castable aerogels can permeate voids having characteristic dimensions as small as nanometers. Hence, practically all the void space surrounding the legs of thermoelectric devices could be filled with aerogel insulation, making the insulation highly effective. Because aerogels have the lowest densities of any known solid materials, they would add very little mass to the encapsulated devices. The thermal-conductivity values of aerogels are among the lowest reported for any material, even after taking account of the contributions of convection and radiation (in addition to true thermal conduction) to overall effective thermal conductivities. Even in ambient air, the contribution of convection to effective overall thermal conductivity of an aerogel is extremely low because of the highly tortuous nature of the flow paths through the porous aerogel structure. For applications that involve operating temperatures high enough to give rise to significant amounts of infrared radiation, opacifiers could be added to aerogels to reduce the radiative contributions to overall effective thermal conductivities. One example of an opacifier is carbon black, which absorbs infrared radiation. Another example of an opacifier is micron- sized metal flakes, which reflect infrared radiation. Encapsulation in cast aerogel insulation also can help prolong the operational lifetimes of thermoelectric devices that must operate in vacuum and that contain SiGe or such advanced skutterudite thermoelectric materials as CoSb3 and CeFe3.5Co0.5Sb12. The primary cause of deterioration of most thermoelectric materials is thermal decomposition or sublimation (e.g., sublimation of Sb from CoSb3) at typical high operating temperatures. Aerogel present near the surface of CoSb3 can impede the outward transport of Sb vapor by establishing a highly localized, equilibrium Sb vapor atmosphere at the surface of the CoSb3.
Thermoelectric Materials With the Skutterudite Structure: New Results
New experimental findings on semiconductors with the relatively complex 32 atom unit cell skutterudite crystal structure show that these materials possess attractive transport properties and have a good potential for achieving ZT values larger than for state-of- the-art thermoelectric materials. An overview of recent results is provided, and current approaches to experimentally achieving high ZT in skutterudite materials are discussed.
High Figure of Merit in Ce-Filled Skutterudites
New thermoelectric materials with superior transport properties at high temperatures have been discovered. These materials are part of the large family of skutterudites, a class of compounds which have shown a good potential for thermoelectric applications [1-4].
Thermoelectric Skutterudite Compositions and Methods for Producing the Same
Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermoelectric materials such as n-type and p-type skutterudites with high thermoelectric figures-of-merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated can be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non-Skutterudite-based materials, or combinations of such materials.
Thermoelectric devices based on materials with filled skutterudite structures
A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.
Skutterudites: a New Class of Promising Thermoelectric Materials
Based on literature data and experimental findings at JPL, semiconductors with the skutterudite structure TPn(sub 3) (where T is a transition metal element such as Co, Rh, Ir, Ni and Pd, and Pn is a pnicogen element such as P, As and Sb) possess attractive characteristics and show a good potential for high ZT values. the high degree of covalency results in high mobility and low electrical resistivity values while a relatively complex 32-atom unit cell results in a reasonably low thermal conductivity.
Modeling of the Thermoelectric Properties of p-Type IrSb(sub 3)
IrSb(sub 3) is a compound of the skutterudite family of materials now being investigated at JPL. A combination of experimental and theoretical approaches has been recently applied at JPL to evaluate the potential of several thermoelectric materials such as n-type and p-type Si(sub 80) Ge(sub 20) alloys, n-type and p-type Bi(sub 2) Te(sub 3)-based alloys and p-type Ru(sub 2) Ge(sub 3) compound. The use of a comprehensive model for the thermal and electrical transport properties of a given material over its full temperature range of usefulness is a powerful tool for guiding experimental optimization of the composition, temperature and doping level as well as for predicting the maximum ZT value likely to be achieved.
Solid Solutions Formation: Improving the Thermoelectric Properties of Skutterudites
Materials with skutterudite structure have been known for a long time. Some of them are semiconductors. A typical skutterudite is CoSb(sub 3) and its thermoelectric properties were partially studied in the 1960's. Recently, it has been discovered that many skutterudite compounds are thermoelectrics with promising future.
Preparation and Characterization of the Skutterudite-Related Phase Ru0.5Pd0.5 Sb3
A new skutterudite phase Ru0.5Pd0.5 Sb3 was prepared. It adds to the many materials with the skutterudite structure that have shown a good potential for thermoelectric applications. Single- phase polycrystalline samples were prepared and characterized by x-ray analysis, electron probe microanalysis, density, sound velocity, thermal expansion coefficient, and differential thermal analysis measurements.
Skutterudites for Thermoelectric Applications
ct given. Summary - This paper says an exploratory search at JPL for new, high-performance thermoelectric materials identified a skutterudite family. Skutterudites might be of interest for electronics, and other applications. Several skutterudites have shown very interesting properties: very low thermal conductivity, very high p-type mobility values, large n-type Seebeck values, large number of isostructural materials. A systematic investigation of skutterudites found: it's necessary to understand trends in properties, and the goal should be to determine the best approach for high ZT.
Process in the Search for Advanced Thermoelectric Materials for Terrestrial Applications at the Jet
The thermoelectric properties of several materials with the skutterudite structure have been.
Preparation and Some Properties of N-Type IrxCo1-xSB3 Solid Solutions
A number of studies have been recently devoted to the preparation and characterization of binary skutterudite materials to investigate their potential as advanced thermoelectric materials. These studies show that the potential of these binary skutterudite compounds is limited because of their relatively large thermal conductivity. In order to achieve high thermoelectric figure of merits for these materials, efforts should focus on thermal conductivity reduction. Recent results obtained on n-type CoSb3 and IrSb3 compounds have shown that n-type skutterudite materials might have a better potential for thermoelectric applications than p-type materials. The thermoelectric properties of p-type IrxCo1-xSb3 solid solutions have been recently investigated and it was shown that a substantial reduction in thermal conductivity was achieved. We prepared and measured some properties of n-type IrxCo1-xSb3 solid solutions. The samples are characterized by large Seebeck coefficient values and significantly lower thermal conductivity values than those measured on the binary compounds CoSb3 and IrSb3. A maximum ZT value of about 0.4 was obtained at a temperature of about 300(deg)C. Improvements in the figure of merit are possible in this system by optimization of the doping level.
Thermoelectric materials development
A systematic search for advanced thermoelectric materials was initiated at JPL several years ago to evaluate candidate materials which includes consideration of the following property attributes: (1) semiconducting properties; (2) large Seebeck coefficient; (3) high carrier mobility and high electrical conductivity; (4) low lattice thermal conductivity; and (5) chemical stability and low vapor pressure. Through this candidate screening process, JPL identified several families of materials as promising candidates for improved thermoelectric materials including the skutterudite family. As part of an ongoing effort to develop skutterudite materials with lower thermal conductivity values, several solid solutions and filled skutterudite materials were investigated under the effort sponsored by DOE. The efforts have primarily focused on: (1) study of existence and properties of solid solutions between the binary compounds CoSb3 and IrSb3, and RuSb2Te, and (2) CeFe(4-x)Sb12 based filled compositions. For the solid solutions, the lattice thermal conductivity reduction was expected to be reduced by the introduction of the Te and Ru atoms while in the case of CeFe(4-x)Ru(x)Sb12 based filled compositions. For the solid solutions, the lattice thermal conductivity reduction was expected to be reduced by the introduction of the Te and Ru atoms while in the case of CeFe(4-x)Ru(x)Sb12 filled compositions, the reduction would be caused by the rattling of Ce atoms located in the empty voids of the skutterudite structure and the substitution of Fe for Ru. The details of the sample preparation and characterization of their thermoelectric properties are reported in this report.