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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Spatial profiles of photon chemical potential in near-field thermophotovoltaic cells

Emitted photons stemming from the radiative recombination of electron–hole pairs carry chemical potential in radiative energy converters. This luminescent effect can substantially alter the local net photogeneration in near-field thermophotovoltaic cells. Several assumptions involving the luminescent effect are commonly made in modeling photovoltaic devices; in particular, the photon chemical potential is assumed to be zero or a constant prescribed by the bias voltage. The significance of photon chemical potential depends upon the emitter temperature, the semiconductor properties, and the injection level. Hence, these assumptions are questionable in near-field thermophotovoltaic devices with nanoscale separation distances between the emitter and the cell. In the present work, an iterative solver that combines fluctuational electrodynamics with the drift-diffusion model is developed to tackle the coupled photon and charge transport problem, enabling the determination of the spatial profile of photon chemical potential beyond the detailed balance approach. Here, the difference between the results obtained by allowing the photon chemical potential to vary spatially and by assuming a constant value demonstrates the limitations of the conventional approaches. This study is critically important for performance evaluation of near-field thermophotovoltaic systems with nanoscale vacuum gaps.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Large Area Near‐Field Thermophotovoltaics for Low Temperature Applications

Abstract Thermophotovoltaics, devices that convert thermal infrared photons to electricity, offer a key pathway for a variety of critical renewable energy technologies including thermal energy storage, waste heat recovery, and direct solar‐thermal power generation. However, conventional far‐field devices struggle to generate reasonable powers at lower temperatures. Near‐field thermophotovoltaics provide a pathway to substantially higher powers by leveraging photon tunneling effects. Here a large area near‐field thermophotovoltaic device is presented, created with an epitaxial co‐fabrication approach, that consists of a self‐supported 0.28 cm 2 emitter‐cell pair with a 150 nm gap. The device generates 1.22 mW at 460 °C, a 25‐fold increase over the same cell measured in a far‐field configuration. Furthermore, the near‐field device demonstrates short circuit current densities greater than the far‐field photocurrent limit at all the temperatures tested, confirming the role of photon tunneling effects in the performance enhancement. Modeling suggests several practical directions for cell improvements and further increases in power density. These results highlight the promise of near‐field thermophotovoltaics, especially for low temperature applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Accurate calibration of thermophotovoltaic efficiency

Abstract The new record efficiency in Thermophotovoltaics relies upon a highly reflective rear mirror. The excellent rear mirror boosts voltage by enhancing the luminescence extraction, and separately also reflects low energy photons, which would otherwise be useless in thermophotovoltaics. The reflected low energy photons reheat the thermal emitter, and regenerate above-bandgap energy photons. The efficiency calibration for such regenerative thermophotovoltaics depends on several factors, yet predominantly on the accurate measurement of the rear mirror reflectivity. Here, we report on the technique for accurate measurement of mirror reflectivity, and of record thermophotovoltaic efficiency 29.1 ± 0.6%, at 1207 °C.

14 SOLAR ENERGY↗
NASA NTRS2009

Quantum-Well Thermophotovoltaic Cells

Thermophotovoltaic cells containing multiple quantum wells have been invented as improved means of conversion of thermal to electrical energy. The semiconductor bandgaps of the quantum wells can be tailored to be narrower than those of prior thermophotovoltaic cells, thereby enabling the cells to convert energy from longer-wavelength photons that dominate the infrared-rich spectra of typical thermal sources with which these cells would be used. Moreover, in comparison with a conventional single-junction thermophotovoltaic cell, a cell containing multiple narrow-bandgap quantum wells according to the invention can convert energy from a wider range of wavelengths. Hence, the invention increases the achievable thermal-to-electrical energy-conversion efficiency. These thermophotovoltaic cells are expected to be especially useful for extracting electrical energy from combustion, waste-heat, and nuclear sources having temperatures in the approximate range from 1,000 to 1,500 C.

Freudlich, Alex↗
DOE OSTI2024

InP- and GaAs-Based 0.6 eV GaInAs Devices for Thermophotovoltaics and Laser Power Conversion

Emerging applications such as thermal energy grid storage, waste heat recovery and portable power generation require efficient thermophotovoltaic (TPV) converters tuned to temperatures near 1000 Degrees Celsius or below. Metamorphic GaInAs with larger lattice constants than InP present a promising option for these needs. The ability to grow these devices on GaAs substrates instead of more expensive InP would enhance the scalability of these devices. In this talk, we present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. These devices are realized using InAsP or GaInP/InAsP compositionally graded buffers which exhibit threading dislocation densities of 1.3 +/- 0.6 x 106 cm-2 and 8.9 +/- 1.7 x 106 cm-2 on InP and GaAs, respectively. Despite this difference in defect density, the devices generate similar open-circuit voltages of 0.386 V and 0.383 V, respectively, under irradiance producing a short-circuit current density of -10 A/cm2, with bandgap-voltage offsets of 0.20 and 0.21 V. We estimate their thermophotovoltaic efficiency using these measurements coupled with broadband reflectance measurments. The InP-based cell is estimated to yield 1.09 W/cm2 at 1100 Degrees Celsius vs. 0.92 W/cm2 for the GaAs-based cell, with TPV efficiencies of 16.8 vs. 9.2%. Both devices are limited by sub-bandgap absorption, which we assess largely occurs in the graded buffers. We estimate that the 1100 Degrees Celsius thermophotovoltaic efficiencies would increase to 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application as laser power converters in the 2.0-2.3 um atmospheric window. We estimate efficiencies of 36.8% and 32.5% under 2.0 um monochromatic irradiance of 1.86 W/cm2 and 2.81 W/cm2, respectively.

ENGINEERING,MATERIALS SCIENCE,SOLAR ENERGY↗
NASA NTRS1995

High efficiency radioisotope thermophotovoltaic prototype generator

A radioisotope thermophotovoltaic generator space power system (RTPV) is lightweight, low-cost alternative to the present radioisotope thermoelectric generator system (RTG). The fabrication of such an RTPV generator has recently become feasible as the result of the invention of the GaSb infrared sensitive photovoltaic cell. Herein, we present the results of a parametric study of emitters and optical filters in conjuction with existing data on gallium antimonide cells. We compare a polished tungsten emitter with an Erbia selective emitter for use in combination with a simple dielectric filter and a gallium antimonide cell array. We find that the polished tungsten emitter is by itself a very selective emitter with low emissivity beyond 4 microns. Given a gallium antimonide cell and a tungsten emitter, a simple dielectric filter can be designed to transmit radiant energy below 1.7 microns and to reflect radiant energy between 1.7 and 4 microns back to the emitter. Because of the low long wavelength emissivity associated with the polished tungsten emitter, this simple dielectric filter then yields very respectable system performance. Also as a result of the longer wavelength fall-off in the tungsten emissivity curve, the radiation energy peak for a polished tungsten emitter operating at 1300 K shifts to shorter wavelengths relative to the blackbody spectrum so that the radiated energy peak falls right at the gallium antimonide cell bandedge. The result is that the response of the gallium antimonide cell is well matched to a polished tungsten emitter. We propose, therefore, to fabricate an operating prototype of a near term radioisotope thermophotovoltaic generator design consisting of a polished tungsten emitter, standard gallium antimonide cells, and a near-term dielectric filter. The Jet Propulsion Laboratory will design and build the thermal cavity, and JX Crystals will fabricate the gallium antimonide cells, dielectric filters, and resultant receiver panels. With 250 Watts of heat input, we expect this prototype to produce over 300 Watts of electrical energy output for a system energy conversion efficiency of over 12%. This low risk, near term design provides advances relative to present radioisotope thermophotovoltaic generators and has the additional advantage of allowing component and system development and testing to begin immediately. Improved cells and filters can easily be incorporated in this baseline system if they should become available in the future.

Avery, James E.↗
DOE OSTI2022

Efficient and scalable GaInAs thermophotovoltaic devices

We report thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste-heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm 2 ), scalable, single-junction 0.75-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8% +/- 2.0% and an electrical power density of 3.78 W/cm 2 at an emitter temperature of 1,850 °C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral management with an optimized cell architecture, excellent material quality, and low series resistance. Importantly, fabrication of 12 high-performing devices on a 2-in wafer is shown to be repeatable, and the cell design can be readily transferred to commercial epitaxy on even larger wafers. Further improvements in efficiency can be obtained by using a multijunction architecture, illustrated by early results for a two-junction 0.84-eV GaInPAs/0.75-eV GaInAs device.

14 SOLAR ENERGY↗
DOE OSTI2025

Empirical thermophotovoltaic performance predictions and limits

Significant progress has been made in the field of thermophotovoltaics, with efficiency recently rising to over 40% due to improvements in cell design and material quality, higher emitter temperatures, and better spectral management. However, inconsistencies in trends for efficiency with semiconductor bandgap energy across various temperatures pose challenges in predicting optimal bandgaps or expected performance for different applications. To address these issues, here we present realistic performance predictions for various types of single-junction cells over a broad range of emitter temperatures using an empirical model based on past cell measurements. Our model is validated using data from different authors with various bandgaps and emitter temperatures, and an excellent agreement is seen between the model and the experimental data. Using our model, we show that in addition to spectral losses, it is important to consider practical electrical losses associated with series resistance and cell quality to avoid overestimation of system efficiency. Here, we also show the effect of modifying various system parameters such as bandgap, above and below-bandgap reflectance, saturation current, and series resistance on the efficiency and power density of thermophotovoltaics at different temperatures. Finally, we predict the bandgap energies for best performance over a range of emitter temperatures for different cell material qualities.

14 SOLAR ENERGY↗
DOE OSTI2021

Coupled Charge and Radiation Transport Processes in Thermophotovoltaic and Thermoradiative Cells

Accurate modeling of charge transport and both thermal and luminescent radiation is crucial to the understanding and design of radiative thermal energy converters. Charge-carrier dynamics in semiconductors are well-described by the Poisson-drift-diffusion equations, and thermal radiation in emitter-absorber structures can be computed using multilayer fluctuational electrodynamics. These two types of energy flows interact through radiation absorption or luminescence and charge-carrier generation or recombination. However, past research has typically only assumed limited interaction, with thermal radiation absorption as an input for charge-carrier models to predict device performance. To examine this assumption, we develop a fully coupled iterative model of charge and radiation transport in semiconductor devices, and we use our model to analyze near-field and far-field GaSb thermophotovoltaic and thermoradiative systems. By comparing our results with past methods that do not consider cross-influences between charge and radiation transport, we find that a fully coupled approach is necessary to accurately model photon recycling and near-field enhancement of external luminescence. As these effects can substantially alter device performance, our modeling approach can aid in the design of efficient thermophotovoltaic and thermoradiative systems.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2022

Record Efficiency InGaAs Thermophotovoltaic Cells For Energy Storage Applications

Utility-scale energy storage is a significant technical challenge and a key barrier to widespread adoption of renewable energy. An efficient, modular, and scalable solution can be achieved by storing energy in the form of high-temperature heat and then extracting energy, on demand, using thermophotovoltaic (TPV) cells to convert the heat back to electricity. The ideal thermal emitter temperature is determined by balancing the desire for higher power densities, high-temperature compliant materials, and efficient, cost-effective thermophotovoltaic cells, among other considerations. 0.74-eV InGaAs lattice-matched to InP is a good choice for a cell absorber, and here we describe our development of InGaAs TPV cells with efficiencies of 38.8% from an ~1850 degrees celsius source temperature. This is the highest efficiency yet measured and reported for a single-junction TPV device. This efficiency was achieved by carefully quantifying and then reducing the parasitic absorption in the semiconductor layers, and by significantly reducing the series resistance to minimize the power loss.

ENERGY STORAGE,ENGINEERING,SOLAR ENERGY↗
DOE OSTI2020

High-efficiency solar thermophotovoltaic system using a nanostructure-based selective emitter

Herein, we present the design, fabrication, optimization, and experimental results of a high-efficiency planar solar thermophotovoltaic (STPV) system utilizing a micro-textured absorber and a nanostructure multilayer metal-dielectric coated selective emitter fabricated on a tungsten (W) substrate. Light absorptance of more than 90% was achieved at visible and near-infrared wavelengths using the microtextured absorbing surface. The nanostructure selective emitter consists of two thin-film optical coatings of silicon nitride (Si3N4) and a layer of W in between to increase the surface emissivity in spectral regimes matching the quantum efficiency of the thermophotovoltaic (TPV) cells. Gallium antimonide (GaSb)-based TPV cells are used in our STPV design. The experiment was conducted at different operating temperatures using a high-power continuous wave laser diode stack as a simulated source of concentrated incident radiation. Our experimental setup measured a maximum electrical output power density of 1.71 W/cm 2 at 1676 K STPV temperature, and the overall power conversion efficiency of 8.4% after normalizing the output power density to the emitter area. This is the highest STPV system efficiency reported so far for any experimental STPV device. The incident optical laser power on the absorber side was 131 W. This is equivalent to a solar concentration factor of ~2100, which is within the practical limit and readily achievable with Fresnel lens setup.

14 SOLAR ENERGY↗
DOE OSTI2020

High-temperature thermal energy storage with thermophotovoltaic energy conversion (Final Report)

This project began with a simple concept: that thermal energy storage paired with thermophotovoltaic power conversion could be a cost-effective solution to the challenge of renewables variability. Renewable energy sources such as solar and wind energy are clean, affordable, and abundant worldwide, but their variability presents a major problem for the incorporation of a large amount of these resources in global power systems. Systems with high penetrations of renewables frequently see periods of overproduction, where renewable energy is thrown away, and periods of underproduction, where expensive and polluting fossil fuel resources must be used to fill in the gaps. While energy storage technologies such as lithium ion batteries can help store energy from times of overproduction to times the energy is needed, current and projected future prices for these technologies are not low enough to support very renewables-heavy power grids. The research also focused on the techno-economics of using thermal energy storage and thermophotovoltaics to store the energy from solar and wind energy sources when they are available and release this energy back to the grid when it is needed. One of the biggest outcomes of this research was the conclusion that battery prices must drop 10x from their current values in order to meet this need, and this is unlikely to happen with current technologies such as lithium ion batteries.

14 SOLAR ENERGY↗
NASA NTRS1987

Thermophotovoltaic space power system, phase 3

Work performed on a research and development program to establish the feasibility of a solar thermophotovoltaic space power generation concept was summarized. The program was multiphased. The earlier work is summarized and the work on the current phase is detailed as it pertains to and extends the earlier work. Much of the experimental hardware and materials development was performed on the internal program. Experimental measurements and data evaluation were performed on the contracted effort. The objectives of the most recent phase were: to examine the thermal control design in order to optimize it for lightweight and low cost; to examine the concentrator optics in an attempt to relieve pointing accuracy requirements to + or - 2 degrees about the optical axis; and to use the results of the thermal and optical studies to synthesize a solar thermophotovoltaic (STPV) module design that is optimized for space application.

Horne, W. E.↗
NASA NTRS1995

InGaAsSb/GaSb thermophotovoltaic cells

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In(1 - x)Ga(x)As(1 -y)Sb(y) alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x, y); and is closely lattice-matched to the GaSb substrate The use of the quaternary alloy, as opposed to a ternary alloy - such as, for example, InGaAs/InP - permits low bandgap devices optimized for 1000 to 1500 C thermal sources with, with at the time, near-exact lattice matching to the GaSb substrate. Lattice-matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. For bandgaps of 0.52 eV,Fo internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/sq cm is 0.220 volts and 0.260 V for current densities of 2 A/sq cm. Fill factors of 56% have also been measured. These preliminary results lead to the conclusion that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1000 to 1500 C source temperatures.

Mauk, M. G.↗
NASA NTRS1996

InGaAsSb/GaSb thermophotovoltaic cells

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a tvo-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate The (direct) bandgap of the In(1-x)Ga(x)As(1-y)Sb(y) alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy as opposed to a ternary alloy -- such as, for example, InGaAs/InP -- permits low bandgap devices optimized for 1000 to 1500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice-matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm(exp 2) is 0.220 volts and 0.260 V for current densities of 2 A/cm(exp 2). Fill factors of 56% have been measured at 60 mA/cm(exp 2). However as current density increases there is some decrease in fill factor. Our results to date snow that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1000 to 1500 C source temperatures.

Shellenbarger, Z. A.↗
NASA NTRS1995

Thermophotovoltaic Generators Using Selective Metallic Emitters

In the literature to date on thermophotovoltaic (TPV) generators, two types of infrared emitter's have been emphasized : gray body emitters and rare earth oxide selective emitters. The gray body emitter is defined as an emitter with a spectral emissivity independent of wavelength whereas the rare earth oxide selective emitter is idealized as a delta function emitter with a high emissivity at a select wavelength and a near zero emissivity at all other wavelengths. Silicon carbide is an example of a gray body emitter and ER-YAG is an example of a selective emitter. The Welsbach mantle in a common lantern is another example of an oxide selective emitter. Herein, we describe an alternative type of selective emitter, a selective metallic emitter. These metallic emitters are characterized by a spectral emissivity curve wherein the emissivity monotonically increases with shorter infrared wavelengths as is shown. The metal of curve "A", tungsten, typifies this class of selective metallic emitter's. In a thermophotovoltaic generator, a photovoltaic cell typically converts infrared radiation to electricity out to some cut-off wavelength. For example, Gallium Antimonide (GaSb) TPV cells respond out to 1.7 microns. The problem with gray body emitters is that they emit at all wavelengths. Therefore, a large fraction of the energy emitted will be outside of the response band of the TPV cell. The argument for the selective emitter is that, ideally, all the emitted energy can be in the cells response band. Unfortunately, rare earth oxide emitters are not ideal. In order to suppress the emissivity toward zero away from the select wavelength, the use of thin fiber's is necessary. This leads to a fragile emitter typical of a lantern mantle. Even given a thin ER-YAG emitter, the measured emissivity at the select wavelength of 1.5 microns has been reported to be 0.6 while the off wavelength background emissivity falls to only 0.2 at 5 microns. This gives a selectivity ratio of only 3. Another problem with a delta function selective emitter is its low power density at practical temperatures because of its narrow emission bandwidth. The concept of selectivity can be generalized by noting that we simply wish to maximize the ratio of in-cell-band power to out-of-cell-band power. Using this generalized selectivity concept and assuming a GaSb cell covered by a simple dielectric filter, we note that the emissivity selectivity ratio for tungsten is 0.3 (at 1.5 microns) / 0.07 (at 5 microns) = 4.3. In the folloy4ng sections, we note that the selective metallic emitters can be valuable in both radioisotope TPV generators in space and in hydrocarbon fired TPV generators here on earth.

Fraas, Lewis M.↗
NASA NTRS1997

Thermophotovoltaic Cell Technology Transferred to the Department of Energy Laboratory and a Commercial Manufacturer

Researchers in the NASA Lewis Research Center's Photovoltaic Branch have developed novel photovoltaic device, called a Monolithically Interconnected Module (MIM), for use in thermophotovoltaic (TPV) power systems. TPV power systems function by heating an emitter to produce light. This light is then converted into electricity by a photovoltaic device or a solar cell. Possible heat sources for the system include concentrated solar energy, the combustion of various fuels, and nuclear decay. NASA has an interest in TPV systems for deep space (nuclear-powered) and near-Sun (solar-powered) missions. There also are many commercial and military applications for TPV, given its potential for high efficiency, low noise, and reliable power. The Monolithically Interconnected Module consists of many small solar cells that are series-interconnected on a common substrate. The cells are fabricated from indium gallium arsenide (InGaAs), which can convert the near-infrared portion of the emitter output spectrum into electricity. The InGaAs devices are deposited on an indium phosphide (InP) substrate that provides electrical isolation. On the bottom the InP substrate is an infrared reflector that returns all the photons that are not converted by the InGaAs device back to the emitter where they are absorbed. This process helps maintain the emitter temperature and dramatically improves the system efficiency. Monolithically Interconnected Module InGaAs thermophotovoltaic cell developed by Lewis. Compared with conventional TPV cells, this TPV device has higher output voltages and lower resistive losses, higher output power density, simplified thermal management, improved reliability, and higher efficiency. The Monolithically Interconnected Module was initially developed under an internally funded effort (Director's Discretionary Fund). Development is now being funded by another government agency, and prototype devices are being produced by a commercial solar cell manufacturer.

Wilt, David M.↗
NASA NTRS2012

Inverted Three-Junction Tandem Thermophotovoltaic Modules

An InGaAs-based three-junction (3J) tandem thermophotovoltaic (TPV) cell has been investigated to utilize more of the blackbody spectrum (from a 1,100 C general purpose heat source GPHS) efficiently. The tandem consists of three vertically stacked subcells, a 0.74-eV InGaAs cell, a 0.6- eV InGaAs cell, and a 0.55-eV InGaAs cell, as well as two interconnecting tunnel junctions. A greater than 20% TPV system efficiency was achieved by another group with a 1,040 C blackbody using a single-bandgap 0.6- eV InGaAs cell MIM (monolithic interconnected module) (30 lateral junctions) that delivered about 12 V/30 or 0.4 V/junction. It is expected that a three-bandgap tandem MIM will eventually have about 3 this voltage (1.15 V) and about half the current. A 4 A/cm2 would be generated by a single-bandgap 0.6-V InGaAs MIM, as opposed to the 2 A/cm2 available from the same spectrum when split among the three series-connected junctions in the tandem stack. This would then be about a 50% increase (3xVoc, 0.5xIsc) in output power if the proposed tandem replaced the single- bandgap MIM. The advantage of the innovation, if successful, would be a 50% increase in power conversion efficiency from radioisotope heat sources using existing thermophotovoltaics. Up to 50% more power would be generated for radioisotope GPHS deep space missions. This type of InGaAs multijunction stack could be used with terrestrial concentrator solar cells to increase efficiency from 41 to 45% or more.

Wojtczuk, Steven↗