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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Doping CdSexTe1-x/CdTe Graded Absorber Films with Arsenic for Thin-Film Photovoltaics

CdTe thin-film photovoltaics have demonstrated some of the lowest costs of electricity generation owing to its low material cost and ease of manufacturing. However, the full potential of polycrystalline CdTe photovoltaics can only be realized if the open-circuit voltage can be increased beyond 1 V Open-circuit voltage ~850-900 mV has been consistently observed for state-of-the-art polycrystalline CdTe solar cells. Open-circuit voltage of over 1V has been demonstrated for single crystal CdTe devices by doping with Group V elements. Therefore, this study is aimed at understanding behavior of polycrystalline CdTe devices with arsenic doping, its activation and process and performance optimization in order to overcome current voltage limitations in CdTe solar cells.

14 SOLAR ENERGY↗
NASA NTRS1993

Flexible polycrystalline thin-film photovoltaics for space applications

Polycrystalline thin-film photovoltaics (PV), such as CIS and CdTe, have received considerable attention recently with respect to space power applications. Their combination of stability, efficiency, and economy from large-scale monolithic-integration of modules can have significant impact on cost and weight of PV arrays for spacecraft and planetary experiments. An added advantage, due to their minimal thickness (approximately 6 microns sans substrate), is the ability to manufacture lightweight, flexible devices (approximately 2000 W/kg) using large-volume manufacturing techniques. The photovoltaic effort at Martin Marietta and ISET is discussed, including large-area, large-volume thin-film deposition techniques such as electrodeposition and rotating cylindrical magnetron sputtering. Progress in the development of flexible polycrystalline thin-film PV is presented, including evaluation of flexible CIS cells. In addition, progress on flexible CdTe cells is presented. Finally, examples of lightweight, flexible arrays and their potential cost and weight impact is discussed.

Armstrong, J. H.↗
NASA NTRS1994

Advances in polycrystalline thin-film photovoltaics for space applications

Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical methods. Both laser and mechanical scribing operations are used to monolithically integrate (series interconnect) the individual cells into modules. Results will be presented at the cell and module development levels with a brief description of the test methods used to qualify these devices for space applications. The approach and development efforts are directed towards large-scale manufacturability of established thin-film, polycrystalline processing methods for large area modules with less emphasis on maximizing small area efficiencies.

Lanning, Bruce R.↗
DOE OSTI2021

Colossal Grains for a New Structural Paradigm in Thin-Film Photovoltaics

II-VI based thin-film photovoltaics (PV) have experienced substantial commercial success on a foundation of fast large-scale deposition and processing. This type of processing, regardless of material type, nearly always results in small grain (nm to several um diameters) polycrystalline material that, if not for effective grain boundary (GB) and defect passivation, would severely limit PV performance. In the case of CdTe based PV technology, the nearly ubiquitous CdCl2 treatment is used, in part, to passivate the polycrystalline p-type absorber even though Cl is known to (and used to) compensate p-type II-VI materials. Given that VOC is still the most limited performance metric and it can only be improved through higher p-type absorber concentrations, CdCl2 treatments may be holding the technology back. In this talk, we will discuss results related to a process by which small grain CdSeTe material is rapidly transformed into very large grain material (100-1000um diameters, Fig. 1a). This explosive recrystallization, which we have termed colossal grain growth (CGG), occurs by a Cl free process with thin films (<10um) deposited using the same fast deposition techniques the industry has relied on for more than a decade. Our modeling suggests that GB recombination becomes significantly less important at these grain sizes and thus may eliminate the need for a CdCl2 treatment. This result is complimented by previous results of epitaxial growth at high rates on single crystal seed layers. Thin CdSeTe CGG seed layers can be used for rapid epitaxy of CdTe to complete a standard device stack (Fig.1b). This is an optimistic view and the current limitations and challenges related to this process and these materials will also be discussed, including alloy and substrate roughness sensitivity, intragrain material quality, and complex defect chemistry. These challenges are not insignificant but overcoming them may enable a new structural paradigm for thin-film PV.

CdTe↗
NASA NTRS2004

Analysis of Electrical Characteristics of Thin Film Photovoltaic Cells

Solar energy is the most abundant form of energy in many terrestrial and extraterrestrial environments. Often in extraterrestrial environments sunlight is the only readily available form of energy. Thus the ability to efficiently harness solar energy is one of the ultimate goals in the design of space power systems. The essential component that converts solar energy into electrical energy in a solar energy based power system is the photovoltaic cell. Traditionally, photovoltaic cells are based on a single crystal silicon absorber. While silicon is a well understood technology and yields high efficiency, there are inherent disadvantages to using single crystal materials. The requirements of weight, large planar surfaces, and high manufacturing costs make large silicon cells prohibitively expensive for use in certain applications. Because of silicon s disadvantages, there is considerable ongoing research into alternative photovoltaic technologies. In particular, thin film photovoltaic technologies exhibit a promising future in space power systems. While they are less mature than silicon, the better radiation hardness, reduced weight, ease of manufacturing, low material cost, and the ability to use virtually any exposed surface as a substrate makes thin film technologies very attractive for space applications. The research group lead by Dr. Hepp has spent several years researching copper indium disulfide as an absorber material for use in thin film photovoltaic cells. While the group has succeeded in developing a single source precursor for CuInS2 as well as a unique method of aerosol assisted chemical vapor deposition, the resulting cells have not achieved adequate efficiencies. While efficiencies of 11 % have been demonstrated with CuInS2 based cells, the cells produced by this group have shown efficiencies of approximately 1 %. Thus, current research efforts are turning towards the analysis of the individual layers of these cells, as well as the junctions between them, to determine the cause of the poor yields. As a student of electrical engineering with some material science background, my role in this research is to develop techniques for analyzing the electrical characteristics of the CuInS2 cells. My first task was to design a shadow mask to be used to place molybdenum contacts under a layer of CuInS;! in order to analyze the contact resistance between the materials. In addition, I have also analyzed evaporated aluminum top contacts and have tested various methods of increasing their thicknesses in order to decrease series resistance. More recently I have worked with other members of the research group in reviving a vertical cold-wall reactor for experimentation with CuInS2 quantum dots. As part of that project, I have improved the design for a variable frequency and pulse width square wave generator to be used in driving the precursor injection process. My task throughout the remainder of my tenure is to continue to analyze and develop tools for the analysis of electrical properties of the CuInS2 cells with the ultimate goal of discovering ways to improve the efficiency of our photovoltaic cells. Traditionally, photovoltaic cells are based on a single crystal silicon absorber. While The research group lead by Dr. Hepp has spent several years researching copper indium

Kasick, Michael P.↗
NASA NTRS2007

Exploration of CIGAS Alloy System for Thin-Film Photovoltaics on Novel Lightweight and Flexible Substrates

Thin-film photovoltaics (TFPV) on lightweight and flexible substrates offer the potential for very high solar array specific power (W/kg). ITN Energy Systems, Inc. (ITN) is developing flexible TFPV blanket technology that has potential for specific power greater than 2000 W/kg (including space coatings) that could result in solar array specific power between 150 and 500 W/kg, depending on array size, when mated with mechanical support structures specifically designed to take advantage of the lightweight and flexible substrates.(1) This level of specific power would far exceed the current state of the art for spacecraft PV power generation, and meet the needs for future spacecraft missions.(2) Furthermore the high specific power would also enable unmanned aircraft applications and balloon or high-altitude airship (HAA) applications, in addition to modular and quick deploying tents for surface assets or lunar base power, as a result of the high power density (W/sq m) and ability to be integrated into the balloon, HAA or tent fabric. ITN plans to achieve the high specific power by developing single-junction and two-terminal monolithic tandem-junction PV cells using thin-films of high-efficiency and radiation resistant CuInSe2 (CIS) partnered with bandgap-tunable CIS-alloys with Ga (CIGS) or Al (CIAS) on novel lightweight and flexible substrates. Of the various thin-film technologies, single-junction and radiation resistant CIS and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of TFPV device performance, with the best efficiency reaching 19.5% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys will achieve the highest levels of thin-film space and HAA solar array performance.

Woods, Lawrence M.↗
NASA NTRS1988

Electromigration in thin-film photovoltaic module metallization systems

Electromigration as a possible thin-film module failure mechanism was investigated using several specially made, fully aluminized thin-film photovoltaic (TF-PV) modules. The effect of electromigration, as determined experimentally by measuring increases in electrical resistance across scribe lines, can be expressed as the product of a damage function, which correlates degradation rate with operating conditions such as current density and temperature, and a susceptibility function, which is defined by module design parameters, particularly aluminum purity and the configuration of the intercell region. Experimental measurements and derived acceleration factors suggest that open-circuit failure resulting from electromigration should not be a serious problem in present state-of-the-art TF-PV modules. Nevertheless, significant intercell resistance increases can result from long-term electromigration exposure, especially in future high-efficiency modules. The problem can be alleviated, however, by appropriate metallization applications and/or proper design of the intercell region.

Wen, L.↗
NASA NTRS1988

Electrochemical and galvanic corrosion effects in thin-film photovoltaic modules

The electrochemical and galvanic corrosion properties of thin-film photovoltaic (TF-PV) modules and module subcomponents are determined and interpreted in the light of established corrosion science. Results of a detailed study of thin-film aluminum metallization corrosion are presented. Bar-graph corrosion, observed in fielded modules, has been induced experimentally and found to be electrochemical in nature. Corrosion rates and passivation techniques for TF-PV modules are discussed.

Mon, G.↗
DOE OSTI2025

Comprehensive model for evaluating voltage losses and performance improvements in thin-film photovoltaic devices

Progress of state-of-the-art and next-generation thin-film photovoltaic devices is often stymied by open-circuit voltage (𝑉 oc ) that is significantly lower than theoretical and practical limits. Yet, effectively diagnosing the primary sources of voltage loss remains challenging. Herein, a sequence of device-level characterization techniques and simulations are employed to identify and rank loss mechanisms. For the research-based Cd⁡(Se,Te) device under study, most of the loss was at the front semiconductor heterointerface due to a clifflike conduction-band offset that lowered the recombination activation energy. Additional losses due to band tails were quantified by photoluminescence analysis. The latter provided the absorption coefficient and activation energy reduction associated with band tails as inputs to device models. Simulations showed that alleviating front-interface issues would improve 𝑉 oc , but it would then be limited by bulk recombination. Further improvement of the bulk would then lead to back-contact limitations. Reducing band tails is beneficial in any circumstance. In conclusion, this analysis provides guidance for reaching toward the radiative 𝑉 oc limit.

14 SOLAR ENERGY↗
NASA NTRS1985

Reliability and Engineering of Thin-Film Photovoltaic Modules. Research forum proceedings

A Research Forum on Reliability and Engineering of Thin Film Photovoltaic Modules, under sponsorship of the Jet Propulsion Laboratory's Flat Plate Solar Array (FSA) Project and the U.S. Department of Energy, was held in Washington, D.C., on March 20, 1985. Reliability attribute investigations of amorphous silicon cells, submodules, and modules were the subjects addressed by most of the Forum presentations. Included among the reliability research investigations reported were: Arrhenius-modeled accelerated stress tests on a Si cells, electrochemical corrosion, light induced effects and their potential effects on stability and reliability measurement methods, laser scribing considerations, and determination of degradation rates and mechanisms from both laboratory and outdoor exposure tests.

Ross, R. G., Jr.↗
NASA NTRS2006

Experimental Results of Thin-Film Photovoltaic Cells in a Low Density LEO Plasma Environment: Ground Tests

Plasma ground testing results, conducted at the Glenn Research Center (GRC) National Plasma Interaction (N-PI) Facility, are presented for a number of thin-film photovoltaic cells. The cells represent a mix of promising new technologies identified by the Air Force Research Laboratory (AFRL) under the CYGNUS Space Science Technology Experiment (SSTE-4) Program. The current ground tests are aimed at characterizing the performance and survivability of thin film technologies in the harsh low earth orbital space environment where they will be flown. Measurements of parasitic current loss, charging/dielectric breakdown of cover-slide coatings and arcing threshold tests are performed for each individual cell. These measurements are followed by a series of experiments designed to test for catastrophic arc failure mechanisms. A special type of power supply, called a solar array simulator (SAS) with adjustable voltage and current limits on the supply s output, is employed to bias two adjacent cells at a predetermined voltage and current. The bias voltage is incrementally ramped up until a sustained arc results. Sustained arcs are precursors to catastrophic arc failure where the arc current rises to a maximum value for long timescales often ranging between 30 to 100 sec times. Normal arcs by comparison, are short lived events with a timescale between 10 to 30 sec. Sustained arcs lead to pyrolization with extreme cell damage and have been shown to cause the loss of entire array strings in solar arrays. The collected data will be used to evaluate the suitability of thin-film photovoltaic technologies for future space operations.

Galofaro, Joel T.↗
NASA NTRS1985

Reliability and engineering of thin-film photovoltaic modules

Objectives were to: examine thin-film cell attributes that influence module performance and reliability, explore the lessons and applicability of crystalline-silicon module technology to thin-film modules, review the current status of thin-film module technologies, and identify problem areas and needed research. A major need is to separate the effects and resons for reversible degradatin from nonreversible degradation. Amorphous-silicon (a-Si) reliability investigations are focusing on exploratory research investigations, accelerated Arrhenius-type testing of a-Si cells, real-time outdoor exposure testing of a-Si cells, cell failure analysis, and failure mechanism research. Studies included the reduction in strength of glass by high temperature depositions on glass and laser scribing, encapsulation materials development needs, and the testing of modules. The new materials and processes in thin-film modules will require a delinquent reliability effort, including: establishment of mechanism-specific reliability goals; quantification of mechanism parameter dependencies; prediction of expected long-term degradation; identification of cost-effective solutions; and testing and failure analysis of trial solutions.

Royal, E. L.↗
DOE OSTI2023

CdTe-based thin film photovoltaics: Recent advances, current challenges and future prospects

Cadmium telluride (CdTe)-based cells have emerged as the leading commercialized thin film photovoltaic technology and has intrinsically better temperature coefficients, energy yield, and degradation rates than Si technologies. More than 30 GW peak (GWp) of CdTe-based modules are installed worldwide, multiple companies are in production, modules are shipping at up to 18.6% efficiency, and lab cell efficiency is above 22%. We review developments in the science and technology that have occurred over approximately the past decade. These achievements were enabled by manufacturing innovations and scaling module production, as well as maximizing photocurrent through window layer optimization and alloyed CdSe x Te 1-x (CST) absorbers. Improved chlorine passivation processes, film microstructure, and serendipitous Se defect passivation significantly increased minority carrier lifetime. Efficiencies >22% have been realized for both Cu and As doped CST-based cells. The path to further efficiency gains hinges primarily on increasing open circuit voltage (V oc ) and fill factor (FF) through innovations in materials, fabrication methods, and device stacks. Replacing the longstanding Cu doping with As doping is resulting in better module stability and is being translated to large-scale production. To realize 25% efficiency and >1 V V oc , research and development is needed to increase the minority carrier lifetime beyond 100 ns, reduce grain boundary and interface recombination, and tailor band diagrams at the front and back interfaces. Many of these goals have been realized separately however combining them together using scalable manufacturing approaches has been elusive to date. We review these achievements and outstanding opportunities for this remarkable photovoltaic technology.

14 SOLAR ENERGY↗