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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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9 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Increased Static Charge–Induced Threshold Voltage Shifts and Memristor Activity in Pentacene OFETs Comprising Polystyrene–Based Gate Dielectrics Containing Electroactive Small Molecule Crystallites

Top-contact bottom-gate pentacene OFETs are fabricated with single layer dielectrics comprised of either polystyrene (PS), poly(4-methylstyrene) (P4MS), or poly(4-tert-butylstyrene) (P4TBS). The polystyrenes are blended with varying concentrations of two different small molecules, dibenzotetrathiafulvalene (DBTTF) and 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT), to form small, separated crystallites contained throughout the polymer dielectric layer. The OFET characteristics of these devices are investigated and their threshold voltage shifts are measured after –70 V static charging for 5 min. Two-terminal measurements are conducted using multiple different gate biases in the range of –50 to +50 V to investigate memristor behavior in the devices. OFETs containing DBTTF exhibited ΔVth increases as large as 330% relative to control OFETs containing no DBTTF, while OFETs containing at least 7.5 wt.% DBTTF exhibited memristor activity, with currents ranging from 20 nA to 44 µA depending on the applied bias. Furthermore, this work demonstrates that including small, separated crystallites in polymer dielectrics enhances their charge storage ability and can be promising for creating nonbinary memory devices for data processing. Additionally, the observed memristor activity indicates the OFETs in this work can be used in development of neuromorphic systems that aim to mimic the synaptic behavior of the human nervous system.

25 ENERGY STORAGE↗
DOE OSTI2025

Investigation of the Effect of Gate Oxide Screening with Adjustment Pulse on Commercial SiC Power MOSFETs

This paper presents a method to recover the negative threshold voltage shift during high field gate oxide screening of 1.2 kV 4H-SiC MOSFETs with an additional adjustment gate voltage pulse. To reduce field failure rates of the MOSFETs in operation, manufacturers perform a screening treatment to remove devices with extrinsic defects in the oxide. Current gate oxide screening procedures are limited to oxide fields at or below ~9 MV/cm for short durations (<1 s), which is not enough to remove all the devices with extrinsic defects. The results show that by implementing a lower field gate pulse, the threshold voltage shift can be partially recovered, and therefore the maximum screening field and time can be increased. However, both the initial screening pulse and the adjustment pulse require careful calibration to prevent significant degradation of the device threshold voltage, on-resistance, interface state density, or intrinsic lifetime. With a well calibrated set of pulses, higher screening fields can be utilized without significantly damaging the devices. This leads to an improvement in the overall screening efficiency of the process, reducing the number of devices with extrinsic oxide defects entering the field, and improving the reliability of the SiC MOSFETs in operation.

42 ENGINEERING↗
DOE OSTI2025

Radiation Response of Ga 2 O 3 MOSFETs Probed via Focused Particle Beams

Gallium Oxide (Ga 2 O 3 ), particularly in its β-phase, is attracting lots of interest for high-power and high-voltage electronics due to its wide bandgap, high breakdown field, and thermal stability. This study investigates the radiation response of Ga 2 O 3 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Total Ionizing Dose (TID) and Displacement Damage (DD) conditions, which are critical for applications in radiation environments. Utilizing a dual-beam Focused Ion Beam and Scanning Electron Microscope setup, microscale analysis of radiation effects on individual devices is performed. The findings reveal distinct behaviors under TID and DD + TID conditions, with TID leading to threshold voltage shifts due to trapped charges, while DD results in decreased drive current attributed to increased carrier scattering from lattice defects. Notably, it is demonstrated that the TID effect can be mitigated through dynamic threshold voltage adjustments and that the predicted TID from ions calculated by Monte Carlo simulations overestimates actual TID due to unaccounted charge yield effects. In conclusion, this research enhances the understanding of Ga2O3 MOSFETs' performance in harsh radiation environments, providing insights for the design of robust electronic devices for space and nuclear applications.

MOSFET↗
DOE OSTI2025

Characterization of proton-induced damage in thick, p-channel skipper-CCDs

Here, in this work, we characterize the radiation-induced damage in two thick, p-channel skipper-CCDs irradiated unbiased and at room temperature with 217-MeV protons. We evaluate the overall performance of the sensors and demonstrate their single-electron/single-photon sensitivity after receiving a fluence on the order of 10 10 protons/cm 2 . Using the pocket-pumping technique, we quantify and characterize the proton-induced defects from displacement damage. We report an overall trap density of 0.134 traps/pixel for a displacement damage dose of 2.3 × 10 7 MeV/g. Three main proton-induced trap species were identified, V 2 , C i O i and V n O m , and their characteristic trap energies and cross sections were extracted. We found that while divacancies are the most common proton-induced defects, C i O i defects have a greater impact on charge integrity at typical operating temperatures because their emission-time constants are comparable or larger than typical readout times. To estimate ionization damage, we measure the characteristic output transistor curves. We found no threshold voltage shifts after irradiation. Our results highlight the potential of skipper-CCDs for applications requiring high-radiation tolerance and can be used to find the operating conditions in which effects of radiation-induced damage are mitigated.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al 2 O 3 /GaN characterized by sputter-assisted ToF-SIMS

Deposition techniques, like atomic layer deposition (ALD), are used to form high-quality dielectrics for GaN-based metal–oxide–semiconductor (MOS) gate structures due to the lack of a reliable thermal oxide in GaN. Moreover, interfacial GaO x from pre-existing native oxides is thought to adversely impact channel carrier dynamics and induce undesired threshold voltage shifts in GaN-based MOS gate structures. Exposure of the GaN surface to the trimethylaluminum (TMA) precursor prior to standard alumina ALD decreases the native oxide layer on GaN, but the extent of chemical modification has not been well studied in the context of interface composition in a MOS gate structure. Herein, we compare annealed 55 nm Al 2 O 3 dielectric films on GaN grown using either a water-first ALD process or a process including sequential pulses of TMA immediately before the initiation of Al 2 O 3 ALD. Time-of-Flight Secondary Ion Mass Spectrometry measures differences in the interfacial GaO x content between each ALD film. Here, it also detects surface contaminant species like Si, F, S, and C. Furthermore, we report the formation of an AlN species at the Al 2 O 3 /GaN interface, which is more prominent for the film grown using the TMA pre-pulse step. In general, this work demonstrates that the TMA pre-pulse step is an effective strategy for cleaning substrate surfaces prior to ALD.

Atomic layer deposition↗
DOE OSTI2025

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers

GeSn is an emerging material with potential applications in next‐generation integrated optoelectronics and quantum information processing. While GeSn/SiGeSn quantum wells exhibit promising optical properties, their electrical transport characteristics and governing electrostatics in gated structures remain unexplored. Heterostructure field‐effect transistors are fabricated using GeSn/SiGeSn quantum wells and electronic transport properties of 2D holes are characterized. At 2 K, heterostructure field‐effect transistors with well/barrier compositions of Ge 0.945 Sn 0.055 /Si 0.03 Ge 0.93 Sn 0.04 and Ge 0.9 Sn 0.1 /Si 0.017 Ge 0.927 Sn 0.056 , show peak mobilities of 9000 and 19 000 cm 2 /Vs, respectively, the latter setting a record for the highest mobility reported for GeSn quantum wells with a Sn concentration around 6 % or greater. Remarkably, at low carrier densities, devices with a SiGeSn barrier exhibit mobilities several times higher than previously reported for GeSn quantum wells with a Ge barrier. This higher mobility contrasts with the expectation that alloy scattering from the barrier would reduce carrier mobility. Two mechanisms based on atom probe tomography data analyses are proposed: i) unintentionally improved SiGeSn/GeSn interface and/or ii) reduced alloy scattering from short‐range order. Significant current–voltage hysteresis is observed, with the effective threshold gate voltage shifting by more than 5 V, attributed to non‐equilibrium trapped charge at various interfaces within the SiGeSn heterostructure.

GeSn↗
DOE OSTI2026

TCAD-Machine Learning Enabled TID Compact Model Development for Commercial SiC MOSFET

We propose a TCAD (Technology Computer Aided Design)-machine learning coupled approach that combines a TCAD tool (Charon), optimization/uncertainty quantification tool (Dakota), surrogate models, and Bayesian learning capabilities. The coupling approach is used for accurate modeling and calibration of total ionizing dose (TID) induced threshold voltage (V th ) shifts in Commercial-Off-The-Shelf (COTS) semiconductor devices and to develop physics-informed TID compact models. This versatile approach is applied to model the TID effect in an exemplar COTS 3.3 kV SiC power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). With the Charon-Dakota coupling, we can determine key device geometry and doping values based on device physics, which are difficult to obtain or not available for COTS devices but important for TCAD simulation; additionally, we can efficiently generate thousands of simulation results in a large parameter space, which makes it possible to develop data-driven surrogate models and perform Bayesian calibration. Utilizing the full tool-coupling approach, we achieve calibrated TCAD simulation models that accurately capture the average TID-induced V th shifts behavior with total doses and V th shifts saturation at high doses as observed in experimental data. More importantly, the calibrated TCAD simulations are obtained with determined TID model parameters (e.g., hole trap density and capture cross section) values that contain well quantified uncertainties. Furthermore, we can isolate and quantify the noises that are not captured by the TCAD models but exist in the measured data due to measurements and devices variabilities. Lastly, the calibrated surrogate models are used to develop physics-informed TID compact models. The method is generalizable to other devices and/or radiation conditions with few modifications and can provide well-determined uncertainties.

COTS↗
DOE OSTI2026

Temperature-Dependent Transport Characteristics of 2D MoS2 Channel FETs Grown Using Salt-Based Precursors

D Transition Metal Dichalcogenides (TMDs), particularly MoS2, are promising candidates for sub-10 nm Gate All Around (GAA) CMOS FETs. Salt-assisted Chemical Vapor Deposition (CVD) enable lateral MoS2 growth at atmospheric pressure and low temperatures. This work analyzes salt-based precursor-driven CVD-grown MoS2 FETs at various temperatures. MoS2 was grown using Ammonium Molybdate salt, sulfurized at 750∘C, and transferred onto p−Si3/SiO2 substrates. At room temperature, threshold voltage (VT) ranged from -35 V to -25 V, with a peak drain current of 1.2μA/μm. As temperature increased above 325K, VT shifted exponentially, and carrier mobility dropped significantly. At 400 K, the gate lost channel control, though gate leakage current remained low. These results are compared with non-salt-based MoS2 growth to assess salt precursor effects.Notice: This manuscript has been authored by UT-Battelle, LLC, under contract DE-AC05-00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (https://www.energy.gov/doe-public-access-plan).

Jones, Andrew [ORNL] (ORCID:0009000233849687)↗
DOE OSTI2025

Measurement of electrical characteristics of Ge-based diodes with thermal GeO2 films exposed to controlled humidity conditions

We investigated the impact of the interaction between gas-phase water molecules and thermally oxidized GeO2 on Ge on the performance of metal–oxide–semiconductor (MOS) structures. A vacuum-integrated setup was developed to form MOS diodes with a GeO2/Ge structure that had been exposed to controlled humidity conditions and to subsequently measure their electrical characteristics in situ. The capacitance–voltage (C–V) curves exhibited a significant negative shift, indicating the generation of positive charges at the GeO2/Ge interface when the GeO2 surface was exposed to humidity levels above approximately 1%. According to a previous study using electron spectroscopy, this threshold corresponds to the humidity level at which molecular water begins to grow on a GeO2/Ge structure. It is likely that gas-phase water molecules infiltrating the GeO2 film bind to local OH sites via hydrogen bonding, leading to the formation of positive fixed charges at the GeO2/Ge interface.

Sano, Shuto↗