Total Ionizing Dose Effects on Gallium Oxide MOSFETs
Poster showing TID data on AFRL Ga2O3 MOSFETs, the mechanisms behind the effects, and some simulations in TCAD
Cadena, Rick [Vanderbilt University]↗
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Total Ionizing Dose Observations On-Board STPSat-6 in GEO
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Heliospheric and Magnetospheric Physics↗
Total Ionizing Dose Effects on Gallium Oxide MOSFETs
This summary will be submitted for review for the 2025 HEART conference.
Smith, Michael Brandon [Sandia National Laboratori↗
A neutron fluence map of the Los Alamos National Laboratory Godiva IV critical assembly
A neutron fluence map and a total ionizing dose map of the Los Alamos National Laboratory Godiva IV fast burst critical assembly was generated using passive reactor dosimetry, comprised of sulfur pellets and thermoluminescent dosimeters. Godiva IV is an unmoderated, fast burst, critical assembly constructed of approximately 65 kg of highly enriched uranium fuel alloyed with 1.5 % molybdenum for strength. The mapping was performed during a single 75.6 ºC temperature rise burst operation, with the top and sides of the cylindrical Godiva-IV Top Hat covered in passive dosimetry. Dosimetry was placed in a symmetric pattern around the Top Hat, with higher concentrations near the control rods and burst rod. A specific portion of the lower quadrant of the burst rod was mapped to confirm a testing region where the neutron fluence varied by no more than ± 5%. The results will be used to assess the neutron, gamma, and total ionizing dose environment in three-dimensional space around the assembly for higher fidelity experiment placement, active dosimetry positioning, and radiation field characterization.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology
This abstract presents a comprehensive analysis of total ionizing dose (TID) response in GlobalFoundries’ 12LP 12nm bulk FinFET technology using 10keV X-rays. Devices with higher threshold voltages (VTs) demonstrated lower increases in off-state leakage current (IDS,OFF) post-irradiation, highlighting the mitigating role of high VT in TID response. Our data shows that transistors with fewer fins exhibit superior TID resistance, implying lower susceptibility to radiation effects. Our study also probed two bias conditions, "Gate-On" and "Pass-Gate," with the former displaying more severe TID degradation. Interestingly, p-type devices displayed negligible degradation, underscoring their inherent resilience to TID effects. Additionally, medium thick n-type devices echoed the fin-count-dependent TID response observed in other transistor types, further strengthening our findings. These results underscore the importance of strategic transistor selection and design for enhancing the TID resilience of future CMOS FinFET architectures, particularly critical in radiation-intense environments.
42 ENGINEERING↗
Radiation Response of Ga 2 O 3 MOSFETs Probed via Focused Particle Beams
Gallium Oxide (Ga 2 O 3 ), particularly in its β-phase, is attracting lots of interest for high-power and high-voltage electronics due to its wide bandgap, high breakdown field, and thermal stability. This study investigates the radiation response of Ga 2 O 3 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Total Ionizing Dose (TID) and Displacement Damage (DD) conditions, which are critical for applications in radiation environments. Utilizing a dual-beam Focused Ion Beam and Scanning Electron Microscope setup, microscale analysis of radiation effects on individual devices is performed. The findings reveal distinct behaviors under TID and DD + TID conditions, with TID leading to threshold voltage shifts due to trapped charges, while DD results in decreased drive current attributed to increased carrier scattering from lattice defects. Notably, it is demonstrated that the TID effect can be mitigated through dynamic threshold voltage adjustments and that the predicted TID from ions calculated by Monte Carlo simulations overestimates actual TID due to unaccounted charge yield effects. In conclusion, this research enhances the understanding of Ga2O3 MOSFETs' performance in harsh radiation environments, providing insights for the design of robust electronic devices for space and nuclear applications.
MOSFET↗
Effect of Gamma Radiation on TaOₓ ECRAM
Electrochemical random access memory (ECRAM) is an emerging three-terminal nonvolatile memory (NVM) with highly controllable channel conductance which is promising for use as an analog memory (or synapse) in analog in-memory computing (IMC) systems. Energy-efficient analog IMC computing is particularly desirable for power-constrained, high-radiation environments such as satellites. However, little is known about the suitability of ECRAM for use in a total ionizing dose (TID) environment. Here, this work investigates the effect of Co-60 gamma radiation on the channel conductance and noise—two properties critical for analog IMC systems—of a TaO x -based ECRAM up to 17.3 Mrad(SiO 2 ) for both low- and high-channel-conductance state devices. A transient increase in conductance is observed in response to radiation which consists of two elements: an immediate increase in conductivity due to photocurrent and a secondary increase in conductivity, which has a slower rise and saturation and can persist for hours after exposure. This secondary, persistent photoconductivity is attributed to charging caused by hole trapping. These transient effects would not likely occur in a space environment due to the low dose rate compared with this experiment. No permanent change is found in the low conductance state (LCS) following exposure and the minor shift in the high conductance change would be less significant than the regular retention decay in this state. A permanent increase in the random telegraph noise is observed, possibly due to increased traps created in the channel. This work demonstrates that TaO x -based ECRAM is suitable for use in spaceborne analog IMC systems that are subject to significant TID.
ECRAM↗
Impact of 12-nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level
Here, this article presents a comparative analysis of total ionizing dose (TID) response in GlobalFoundries’ (GF) 12 low-power (LP) and 12LP+12-nm bulk fin field effect transistor (FinFET) technologies using 10-keV X-rays. Our findings show that 12LP+ n-type transistors demonstrate higher sensitivity to TID degradation of the off-state leakage drain current compared to 12LP. Data indicate that for both 12LP and 12LP+, transistors with higher threshold voltages (VTs) exhibit lower off-state drain-source leakage postirradiation compared to transistors with lower VTs. Data consistently show that transistors with fewer fins per transistor show superior TID tolerance, in both 12LP and 12LP+ technologies. Lower VT transistors in both technologies display similar preirradiation leakage currents. On the other hand, higher VT transistors in 12LP+ show lower preirradiation leakage currents than those in 12LP, highlighting that the front-end-of-line of 12LP+ technology has been modified compared to 12LP. p-type devices in 12LP+ presented negligible degradation. Larger TID sensitivity in 12LP+ might be attributed to the implementation of dual-metal gate work functions, reduced halo doping, deeper source/drain (S/D) doping profiles, and/or 12LP+ having narrower fins compared to 12LP.
Dual-metal gate work functions↗
TCAD-Machine Learning Enabled TID Compact Model Development for Commercial SiC MOSFET
We propose a TCAD (Technology Computer Aided Design)-machine learning coupled approach that combines a TCAD tool (Charon), optimization/uncertainty quantification tool (Dakota), surrogate models, and Bayesian learning capabilities. The coupling approach is used for accurate modeling and calibration of total ionizing dose (TID) induced threshold voltage (V th ) shifts in Commercial-Off-The-Shelf (COTS) semiconductor devices and to develop physics-informed TID compact models. This versatile approach is applied to model the TID effect in an exemplar COTS 3.3 kV SiC power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). With the Charon-Dakota coupling, we can determine key device geometry and doping values based on device physics, which are difficult to obtain or not available for COTS devices but important for TCAD simulation; additionally, we can efficiently generate thousands of simulation results in a large parameter space, which makes it possible to develop data-driven surrogate models and perform Bayesian calibration. Utilizing the full tool-coupling approach, we achieve calibrated TCAD simulation models that accurately capture the average TID-induced V th shifts behavior with total doses and V th shifts saturation at high doses as observed in experimental data. More importantly, the calibrated TCAD simulations are obtained with determined TID model parameters (e.g., hole trap density and capture cross section) values that contain well quantified uncertainties. Furthermore, we can isolate and quantify the noises that are not captured by the TCAD models but exist in the measured data due to measurements and devices variabilities. Lastly, the calibrated surrogate models are used to develop physics-informed TID compact models. The method is generalizable to other devices and/or radiation conditions with few modifications and can provide well-determined uncertainties.
COTS↗
Gamma Radiation Effects in Amorphous and Crystalline Polyaryletherketones
This work investigates the effect of gamma radiation on chain scission and crosslinking in polyaryletherketone (PAEK) thermoplastic filaments, namely, polyetheretherketone (PEEK) and polyetherketoneketone (PEKK) that is either semicrystalline (PEKK-c) or highly amorphous (PEKK-a). The PAEK thermoplastic filaments were exposed to total ionizing doses (TID) of gamma radiation from 1 to 8 MGy in the Gamma Irradiation Facility at Sandia National Laboratories. A combination of thermal and FT-IR spectral analysis of the irradiated specimens was used to study the chain scission and crosslinking behavior between PEEK, PEKK-c, and PEKK-a. Crystallinity decreased with increased TID and melt enthalpy decreased. Despite clear indications of changes to melt and crystallization behavior, any change to the glass-transition temperature was minor until a post-irradiation thermal annealing occurred, which caused an increase in crystallinity. Gamma radiation impacted PEKK-a more due to the lower degree of initial crystallinity, where a reduction in melt enthalpy, crystallinity, and crystallization kinetics was observed. Despite these effects, the ability to achieve a higher degree of crystallization (X c < 20%) by annealing was not affected. The results presented here provide important insight into the performance of a class of commercialized PEKK thermoplastics exposed to a harsh radiation environment.
Crystallinity↗
Evidence for ionization damage in mid-wave infrared nBn detectors
The effects of 63 MeV proton and 60Co gamma irradiation on the operation of 4.3 μm cutoff nBn photodetectors are demonstrated separately, and both are shown to yield a total ionizing dose (TID) effect. The effect is shown here in an InAsSbBi nBn detector and has been observed in other bulk alloy nBn detectors, and is unusual as it is notably absent in superlattice nBn detectors. The non-antireflection coated detectors exhibit a pre-radiation quantum efficiency of 17% at 3.3 μm wavelength and a dark current density of 50 μA/cm2, or roughly 300× the Rule 07 expectation, at their ideal operating voltage of −0.4 V bias at 150 K. Step-wise proton irradiation and in situ measurement indicate that the dark current increases to about 400× Rule 07 at the highest proton dose level of 150 krad(Si) (9.10 × 1011 p+/cm2), while the quantum efficiency is degraded at a relatively faster rate than the majority of analogous detectors characterized by our lab. Both the photocurrent and dark current are also shown to exhibit a turn-on voltage magnitude reduction of 100 mV following either gamma or proton irradiation, a trend which is attributable to negative trapped charge at the barrier interface (TID effect). This theory is further supported by an observed capacitance density magnitude reduction with dose and affirmed with Silvaco TCAD simulations. Following both proton exposure and subsequent anneal and gamma exposure and subsequent anneal; dark current, photocurrent, and CV all approach their pre-radiation baseline values.
Physics↗
CMS High Granularity Calorimeter ECON-D ASIC overview and radiation testing results
The Compact Muon Solenoid (CMS) Experiment’s High Granularity Calorimeter (HGCAL) upgrade replaces the CMS electromagnetic and hadronic endcap calorimeters in preparation for the high-rate and high-radiation environment of the High Luminosity LHC. To effectively use the over 6 million channels of this highly-segmented “imaging” calorimeter, CMS is pioneering very front-end data compression with the Endcap Concentrator (ECON) ASICs – the ECON-T for the trigger path and the ECON-D for the data path. These 65 nm CMOS ASICs are radiation tolerant (200 Mrad) and low-power (< 2.5 mW/channel). In June 2023, we received the first full-functionality prototype of the data path concentrator ASIC, the ECON-D-P1. This talk will present an overview of the ECON-D-P1, summarize functionality and system testing, and present results from both Total Ionizing Dose (TID) and Single Event Effect (SEE) testing campaigns completed in summer 2023, validating the ECON-D radiation tolerant performance.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Design and assembling status of the Mu2e electromagnetic calorimeter mechanical structures
The muon-to-electron conversion (Mu2e) experiment at Fermilab will search for the Charged Lepton Flavour Violating neutrino-less coherent conversion of a muon into an electron in the field of an aluminum nucleus. The observation of this process would be the unambiguous evidence of physics beyond the Standard Model. The detector has been designed as a state-of-the-art crystal calorimeter and employs 1348 pure Cesium Iodide (CsI) crystals readout by UV-extended silicon photosensors and fast front-end and digitization electronics. A design consisting of two identical annular matrices (named disks ) positioned at the relative distance of 70 cm, downstream the aluminum target along the muon beamline, satisfies the Mu2e physics requirements. The hostile Mu2e operational conditions, in terms of radiation levels (total ionizing dose of 12 krad and a neutron fluence of 5 10^{10} n/cm2 @ 1 MeVeq (Si)/y), magnetic field intensity (1 T) and vacuum level (10−4 Torr) have posed tight constraints on the design of the detector mechanical structures and materials choice. The support structure of the two 674 crystal matrices employs two aluminum hollow rings and parts made of open- cell vacuum-compatible carbon fiber. The photosensors and service front-end electronics for each crystal are assembled in a unique mechanical unit inserted in a machined copper holder. The 674 units are supported by a machined plate made of vacuum-compatible plastic material. The plate also integrates the cooling system made of a network of copper lines flowing a low temperature radiation-hard fluid and placed in thermal con- tact with the copper holders. The data acquisition electronics is hosted in aluminum custom crates positioned on the external lateral surface of the two disks. The crates also integrate the electronics cooling system. In this poster we will review the constraints on the calorimeter mechanical structures, the technological choices, and the status of assembling at Fermilab.
Pasciuto, D.↗
Van de Graaff Irradiation Studies of Oxygen Sensor and Hydrated Zirconia Sorbent
Commercial-scale production of Mo-99 demands a facility-wide assessment of radiation-induced degradation across process equipment, instrumentation, and purification media. Key factors— total ionizing dose, dose rate, radiolysis-driven chemistry, thermal loads, activation, and any neutron-related effects—should inform material selection, shielding, and component layout. Purification materials (sorbents, resins, filters, seals, housing) require particular attention to ensure that irradiation does not alter selectivity or capacity, generate fines, or introduce leachables that could compromise Mo-99 purity or downstream Tc-99m generator performance. Dose mapping, accelerated irradiation testing, and studies of extractables/leachables together provide the basis for setting maintenance, calibration, and replacement intervals and for qualifying materials that retain mechanical integrity, chemical compatibility, and radiopurity over their service life.
36 MATERIALS SCIENCE↗
Effects of Ionizing Radiation on the Thermodynamic Stability of Boehmite and Gibbsite
Here, in this study, we examined the effect of gamma radiation on the stabilities of aluminum hydroxide (gibbsite) and aluminum oxyhydroxide (boehmite) nanoparticles in relation to their thermal decomposition. X-ray diffraction (XRD) patterns and scanning electron microscopy (SEM) images revealed no significant differences in mineral components or morphology before and after radiation. However, thermogravimetric and differential scanning calorimetry (TGA/DSC) analyses showed that both boehmite and gibbsite nanoparticles experienced decreased mass loss following irradiation. Raman and attenuated total reflection-Fourier transfer infrared (ATR-FTIR) spectra indicated that a fraction of the hydroxyl content in both cases was selectively cleaved by radiation, primarily at the particle surfaces. Quantitative analyses of thermal mass loss behavior demonstrated that irradiated boehmite and gibbsite nanoparticles had higher activation energies than their pristine counterparts, with the extent of the increase dependent on the total dose. Taken together, these findings suggest that exposure to a sufficient dose of ionizing radiation alters these materials such that they are less prone to decomposition by dehydration. This increased stability may be due to the decreased hydrous nature of the samples after radiation exposure, which was supported by further high temperature drop calorimetry. Additionally, a radiation-induced amorphous phase on the nanoparticle surfaces appears to have a permanent and positive influence on their thermodynamic stabilities.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Long-term, non-invasive FTIR detection of low-dose ionizing radiation exposure
Non-invasive methods of detecting radiation exposure show promise to improve upon current approaches to biological dosimetry in ease, speed, and accuracy. Here we developed a pipeline that employs Fourier transform infrared (FTIR) spectroscopy in the mid-infrared spectrum to identify a signature of low dose ionizing radiation exposure in mouse ear pinnae over time. Mice exposed to 0.1 to 2 Gy total body irradiation were repeatedly measured by FTIR at the stratum corneum of the ear pinnae. We found significant discriminative power for all doses and time-points out to 90 days after exposure. Classification accuracy was maximized when testing 14 days after exposure (specificity > 0.9 with a sensitivity threshold of 0.9) and dropped by roughly 30% sensitivity at 90 days. Infrared frequencies point towards biological changes in DNA conformation, lipid oxidation and accumulation and shifts in protein secondary structure. Since only hundreds of samples were used to learn the highly discriminative signature, developing human-relevant diagnostic capabilities is likely feasible and this non-invasive procedure points toward rapid, non-invasive, and reagent-free biodosimetry applications at population scales.
61 RADIATION PROTECTION AND DOSIMETRY↗
Updates to Composite Analysis Base Case and Null Space Monte Carlo Sensitivity Based on New Unit Dose Factors
This environmental calculation file (ECF) presents the results of the exposure route-specific and total radiological dose assessments for the groundwater exposure pathway as a part of the updated Composite Analysis for Low-Level Waste Disposal in the Hanford Site Central Plateau (FY 2022), based on revised unit dose factors (UDFs) published in CA Special Studies: Updates to the Groundwater Pathway Radiological Dose. The reason for these radiological dose assessments is to estimate the cumulative radiological impacts from all screened sources of ionizing radiation and exposure routes that could potentially contribute to the projected dose to a hypothetical member of the public. Sources of ionizing radiation can include existing or future disposal facilities and other sources including past-practice discharge sites. Additionally, the results of the exposure route-specific and total radiological dose assessments have been revised for the groundwater pathway based on the null space Monte Carlo (NSMC) groundwater concentrations and the most recent updates to the UDFs as a part an uncertainty analysis for the updated Hanford Site CA.
12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
Effects of Proton Irradiation on the Performance of Skipper CCDs
Skipper CCDs are a mature detector technology that has been suggested for future space telescope instruments requiring sub-electron readout noise in the near-ultraviolet to the near-infrared. While modern skipper CCDs inherit from the radiation-tolerant p-channel detectors developed by LBNL, the effects of high doses of ionizing radiation on skipper CCDs (such as those expected in space) remains largely unmeasured. We report preliminary results on the performance of p-channel skipper CCDs following irradiation with 217-MeV protons at the Northwestern Medicine Proton Center. The total nonionizing energy loss (NIEL) experienced by the detectors exceeds 6 years at the Sun-Earth Lagrange Point 2 (L2). We demonstrate that the skipper amplifier continues to function as expected following this irradiation. Owing to the low readout noise of these detectors, controlled irradiation tests can be used to sensitively characterize the charge transfer inefficiency, dark current, and the density and time constants of charge traps as a function of proton fluence. We conclude with a brief outlook toward future tests of these detectors at other proton and gamma-ray facilities.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗