Twist-Angle Controls Interlayer Exciton Dynamics in Transition Metal Dichalcogenide (TMD) Bilayers
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Choi, Junho↗
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Molecular Reaction Imaging of a Surface Recombination Process Explains Performance Variation Among Smooth MoS 2 Photoelectrodes
Transition metal dichalcogenides (TMD) such as WSe 2 and MoS 2 are highly efficient and stable light absorbers in TMD∣I − ,I 3 − ∣Pt liquid junction solar cells. It is generally accepted that TMD crystals with a large fraction of exposed edge sites exhibit lower power conversion efficiencies (PCEs) than apparently smooth crystals. However, one open question is why does the PCE vary significantly from one crystal to another? Answering this critical question could lead to robust syntheses for high quality and uniform TMD samples. In this work, we apply nanoscale photoelectrochemical microscopy techniques to study n-type TMD nanoflake∣I − ,I 3 − ∣Pt cells. Using a combination of near-diffraction-limited photocurrent mapping and molecular reaction imaging techniques, we reveal a previously hidden surface recombination process: photogenerated holes in hidden p-type domains travel micron-scale distances parallel to the solid/liquid interface and preferentially react with iodide at step-edges. The overall efficiency of the nanoflake, as evidenced from whole nanoflake-level photoelectrochemical measurements, is dictated by the size, efficiency, and location of n- and p-type domains. Furthermore, these results provide a unifying view of efficiency losses in smooth TMD photoelectrodes and open the possibility to design electrode architectures that leverage the long-range lateral charge transport property for photoelectrocatalysis.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Optical image analysis of WSe 2 − thresholding for layer detection
The fast and reliable layer identification of two-dimensional transition metal dichalcogenide (TMD), such as WSe 2 , is essential to investigating their thickness-dependent electronic and optical properties. This article presents efficient optical image thresholding methodology designed to segment the mono, bi, and tri-layer regions of WSe 2 flakes mechanically exfoliated onto a SiO 2 /Si substrate. The optical images were first preprocessed to exclude the background effect and analyzed using the pixel medians and interquartile ranges for fundamental color channels—red, green, and blue (RGB). The analysis of red channel pixel intensities yielded three distinct ranges, serving as thresholds for layer segmentation: monolayer (111.0–118.0), bilayer (103.0–110.0), and tri-layer (93.0–103.0). Similarly, thresholds were established for each color channel, facilitating a comparative study of the segmentation performances. Further, the intersection-over-union ($IoU$) calculations revealed that the red and green channels demonstrated greater than 99 % and 90 % accuracy in differentiating each layer, respectively. This approach yields remarkable results without substantial data calibration that utilizes time-intensive heuristic techniques. Moreover, the proposed methodology offers the flexibility to compare performances across different color channels, expanding the applicability for other 2D material systems.
2D Materials↗
Observation of topological superconductivity in a stoichiometric transition metal dichalcogenide 2M-WS 2
Topological superconductors (TSCs) are unconventional superconductors with bulk superconducting gap and in-gap Majorana states on the boundary that may be used as topological qubits for quantum computation. Despite their importance in both fundamental research and applications, natural TSCs are very rare. Here, combining state of the art synchrotron and laser-based angle-resolved photoemission spectroscopy, we investigated a stoichiometric transition metal dichalcogenide (TMD), 2M-WS 2 with a superconducting transition temperature of 8.8 K (the highest among all TMDs in the natural form up to date) and observed distinctive topological surface states (TSSs). Furthermore, in the superconducting state, we found that the TSSs acquired a nodeless superconducting gap with similar magnitude as that of the bulk states. These discoveries not only evidence 2M-WS 2 as an intrinsic TSC without the need of sensitive composition tuning or sophisticated heterostructures fabrication, but also provide an ideal platform for device applications thanks to its van der Waals layered structure.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Sequential order dependent dark-exciton modulation in bi-layered TMD heterostructure
We report the emergence of dark-excitons in transition-metal-dichalcogenide (TMD) heterostructures that strongly rely on the stacking sequence, i.e., momentum-dark K-Q exciton located exclusively at the top layer of the heterostructure. The feature stems from band renormalization and is distinct from those of typical neutral excitons or trions, regardless of materials, substrates, and even homogeneous bilayers, which is further confirmed by scanning tunneling spectroscopy. To understand the unusual stacking sequence, we introduce the excitonic Elliot formula by imposing strain exclusively on the top layer that could be a consequence of the stacking process. We further find that the intensity ratio of Q- to K-excitons in the same layer is inversely proportional to laser power, unlike for conventional K-K excitons. This can be a metric for engineering the intensity of dark K-Q excitons in TMD heterostructures, which could be useful for optical power switches in solar panels.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Clean 2D superconductivity in a bulk van der Waals superlattice
Alternative route to a 2D superconductor Single layers of transition metal dichalcogenides exhibit exotic properties, including superconductivity. The usual route to obtaining such samples is to exfoliate a three-dimensional (3D) crystal. Devarakonda et al. instead grew a superlattice comprising alternating layers of the transition metal dichalcogenide hexagonal NbS 2 and the material Ba 3 NbS 5 (see the Perspective by Schoop). The inert Ba 3 NbS 5 layers serve to dissociate the superconducting NbS 2 layers from one another, resulting in 2D superconductivity with high carrier mobility. The combination of high mobility and reduced dimensionality may give rise to exotic quantum phases. Science , this issue p. 231 see also p. 170
Science & Technology - Other Topics↗
Singlet, triplet, and pair density wave superconductivity in the doped triangular-lattice moiré system
Recent experimental progress has established the twisted bilayer transition metal dichalcogenide (TMD) as a highly tunable platform for studying many-body physics. Particularly, the homobilayer TMDs under displacement field are believed to be described by a generalized triangular-lattice Hubbard model with a spin-dependent hopping phase θ. To explore the effects of θ on the system, we perform density matrix renormalization group calculations for the relevant triangular lattice t-J model. By changing θ at small hole doping, we obtain a region of quasi-long-range superconducting order coexisting with charge and spin density wave within 0 < θ < π/3. The superconductivity is composed of a dominant spin singlet d-wave and a subdominant triplet p-wave pairing. Intriguingly, the S z = ±1 triplet pairing components feature pair-density waves. In addition, we find a region of triplet superconductivity coexisting with charge-density wave and ferromagnetism within π/3 < θ < 2π/3, which is related to the former phase at smaller θ by a combined operation of spin-flip and gauge transformation. Furthermore, our findings provide insights and directions for experimental search for exotic superconductivity in twisted TMD systems.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Competing magnetic states in transition metal dichalcogenide moiré materials
Small-twist-angle transition metal dichalcogenide (TMD) heterobilayers develop isolated flat moiré bands that are approximately described by triangular lattice generalized Hubbard models. In this paper we explore the metallic and insulating states that appear under different control conditions at a density of one electron per moiré period and the transitions between them. By combining fully self-consistent Hartree-Fock theory calculations with strong-coupling expansions around the atomic limit, we identify four different magnetic states and one nonmagnetic state near the model phase diagram’s metal-insulator phase transition line. Here, ferromagnetic insulating states, stabilized by nonlocal direct exchange interactions, are surprisingly prominent.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
GW band structure of monolayer MoS 2 using the SternheimerGW method and effect of dielectric environment
Monolayers of transition-metal dichalcogenides (TMD) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can affect the electronic and optical properties of these two-dimensional (2D) materials. Here, we perform many-body GW calculations using the SternheimerGW method to investigate the quasiparticle band structure of monolayer MoS 2 subject to an effective dielectric screening model, which is meant to approximately describe substrate polarization in real device applications. We show that, within this model, the dielectric screening has a sizeable effect on the quasiparticle band gap, for example the gap renormalization is as large as 250 meV for MoS 2 with model screening corresponding to SiO 2 . Within the G 0 W 0 approximation, we also find that the inclusion of the effective screening induces a direct band gap, in contrast to the unscreened monolayer. We also find that the dielectric screening induces an enhancement of the carrier effective masses by as much as 27% for holes, shifts plasmon satellites, and redistributes quasiparticle weight. Our results highlight the importance of the dielectric environment in the design of 2D TMD-based devices.
36 MATERIALS SCIENCE↗
Moiré Kanamori-Hubbard model for transition metal dichalcogenide homobilayers
Ab initio and continuum model studies predicted that the Γ valley transition metal dichalcogenide (TMD) homobilayers could simulate the conventional multiorbital Hubbard model on the moiré honeycomb lattice. Here, in this work, we perform the Wannierization starting from the continuum model and show that a more general moiré Kanamori-Hubbard model emerges, beyond the extensively studied standard multiorbital Hubbard model, which can be used to investigate the many-body physics in the Γ valley TMD homobilayers. Using the unrestricted Hartree-Fock and Lanczos techniques, we study these half-filled multiorbital moiré bands. By constructing the phase diagrams we predict the presence of an antiferromagnetic state and in addition we found unexpected and dominant states, such as a S = 1 ferromagnetic insulator and a charge density wave state. Our theoretical predictions made using this model can be tested in future experiments on the Γ valley TMD homobilayers.
2-dimensional systems↗
Strain-Induced Trapping of Indirect Excitons in MoSe 2 /WSe 2 Heterostructures
Understanding and control of excitons in transition metal dichalcogenide (TMD) materials are essential for the exploration of the rich many-body physics in TMDs and their applications in photonic and optoelectronic devices. Local strain modulation has been utilized as an effective approach for creating potential traps and localizing intralayer excitons in TMD monolayers. Here, we investigate the effect of strains on indirect excitons in TMD heterostructures. The emergence of narrow spectral peaks from the strained sites together with their drastically reduced lifetimes indicates the formation of potential traps in the heterostructures and the trapping of indirect excitons in them. The absence of photon-antibunching from these trapped indirect excitons further reveals their weak localization in the potential traps. Here, our study indicates that, compared to the case of intralayer excitons, narrower potential traps are required for obtaining highly localized indirect excitons due to their unique properties. These findings have important implications for creating long-wavelength quantum emitters in TMD heterostructures and the exploration of indirect exciton condensation and motion in TMDs.
36 MATERIALS SCIENCE↗
Anomalous Behavior of 2D Janus Excitonic Layers under Extreme Pressures
Newly discovered 2D Janus transition metal dichalcogenides layers have gained much attention from a theory perspective owing to their unique atomic structure and exotic materials properties, but little to no experimental data are available on these materials. Here, experimental and theoretical studies establish the vibrational and optical behavior of 2D Janus S–W–Se and S–Mo–Se monolayers under high pressures for the first time. Chemical vapor deposition (CVD)-grown classical transition metal dichalcogenides (TMD) monolayers are first transferred onto van der Waals (vdW) mica substrates and converted to 2D Janus sheets by surface plasma technique, and then integrated into a 500 µm size diamond anvil cell for high-pressure studies. Overall, the results show that 2D Janus layers do not undergo phase transition up to 15 GPa, and in this pressure regime, their vibrational modes exhibit a nonmonotonic response to the applied pressures (dω/dP). Interestingly, these 2D Janus monolayers exhibit unique blueshift in photoluminescence (PL) upon compression, which is in contrast to many other traditional semiconductor materials. Overall theoretical simulations offer in-depth insights and reveal that the overall optical response is a result of competition between the ab-plane (blueshift) and c-axis (redshift) compression. The overall findings shed the very first light on how 2D Janus monolayers respond under extreme pressures and expand the fundamental understanding of these materials.
2D Janus monolayers↗
Energy-valley-dependent charge transfer in few-layer transition metal dichalcogenide heterostructures
The effect of the energy valley on interlayer charge transfer in transition metal dichalcogenide (TMD) heterostructures is studied by transient absorption spectroscopy and density functional theory. First-principles calculations confirm that the Λ min valley in the conduction band of few-layer WSe 2 evolves from above its K valley in the monolayer (1L) to below it in 4L. Heterostructure samples of nL–WSe 2 /1L–MoS 2 , where n = 1,2,3, and 4, are obtained by mechanical exfoliation and dry transfer. Photoluminescence spectroscopy reveals a thickness-dependent WSe 2 band structure and efficient interlayer charge transfer. Transient absorption measurements show that the electron transfer time from the Λ min valley of 4L WSe 2 to the K valley of MoS 2 is on the order of 30 ps. This process is much slower than the K-K charge transfer in 1L/1L TMD heterostructures. Furthermore, the momentum-indirect interlayer excitons formed after charge transfer have lifetimes >1 ns.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Layered Nano-Mosaic of Niobium Disulfide Heterostructures by Direct Sulfidation of Niobium Carbide MXenes for Hydrogen Evolution
MXene-transition metal dichalcogenide (TMD) heterostructures are synthesized through a one-step heat treatment of Nb 2 C and Nb 4 C 3 . These MXenes are used without delamination or any pre-treatment. Heat treatments accomplish the sacrificial transformation of these MXenes into TMD (NbS 2 ) at 700 and 900 °C under H 2 S. This work investigates, for the first time, the role of starting MXene phase in the derivative morphology. It is shown that while treatment of Nb 2 C at 700 °C leads to the formation of pillar-like structures on the parent MXene, Nb 4 C 3 produces nano-mosaic layered NbS 2 . At 900 °C, both MXene phases, of the same transition metal, fully convert into nanomosaic layered NbS 2 preserving the parent MXene’s layered morphology. When tested as electrodes for hydrogen evolution reaction, Nb 4 C 3 -derived hybrids show better performance than Nb 2 C derivatives. The Nb 4 C 3 -derived heterostructure exhibits a low overpotential of 198 mV at 10 mA cm -2 and a Tafel slope of 122 mV dec -1 , with good cycling stability in an acidic electrolyte
36 MATERIALS SCIENCE↗
Discovery of Charge Order in the Transition Metal Dichalcogenide Fe x NbS 2
The Fe intercalated transition metal dichalcogenide (TMD), Fe 1/3 NbS 2 , exhibits remarkable resistance switching properties and highly tunable spin ordering phases due to magnetic defects. We conduct synchrotron x-ray scattering measurements on both underintercalated ( x = 0.32 ) and overintercalated ( x = 0.35 ) samples. We discover a new charge order phase in the overintercalated sample, where the excess Fe atoms lead to a zigzag antiferromagnetic order. The agreement between the charge and magnetic ordering temperatures, as well as their intensity relationship, suggests a strong magnetoelastic coupling as the mechanism for the charge ordering. In conclusion, our results reveal the first example of a charge order phase among the intercalated TMD family and demonstrate the ability to stabilize charge modulation by introducing electronic correlations, where the charge order is absent in bulk 2H - NbS 2 compared to other pristine TMDs.
36 MATERIALS SCIENCE↗
Defect-Enabled Phase Programming of Transition Metal Dichalcogenide Monolayers
The ability to tune the local electronic transport properties of group VI transition metal dichalcogenide (TMD) monolayers by strain-induced structural phase transformations (“phase programming”) has stimulated much interest in the potential applications of such layers as ultrathin programmable and dynamically switchable nanoelectronics components. In this manuscript, we propose a new approach toward controlling TMD monolayer phases by employing macroscopic in-plane strains to amplify heterogeneous strains arising from tailored, spatially extended defects within the monolayer. Furthermore, the efficacy of our proposed approach is demonstrated via numerical simulations of emerging domains localized around arrays of holes, grain boundaries, and compositional heterointerfaces. Quantitative relations between the macroscopic strains required, spatial resolution of domain patterns, and defect configurations are developed. In particular, the introduction of arrays of holes is identified as the most feasible phase programming route.
2D materials↗
Valley-Coherent Quantum Anomalous Hall State in AB-Stacked MoTe 2 / W S e 2 Bilayers
Moiré materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct manifestation of the intrinsic topological properties of a material and an appealing attribute for low-power electronics applications. The QAH effect has been observed in both graphene and transition metal dichalcogenide (TMD) moiré materials. It is thought to arise from the interaction-driven valley polarization of the narrow moiré bands. Here, we show that the newly discovered QAH state in AB-stacked MoTe 2 / W S e 2 moiré bilayers is not valley polarized but valley coherent. The layer- and helicity-resolved optical spectroscopy measurement reveals that the QAH ground state possesses spontaneous spin (valley) polarization aligned (antialigned) in two TMD layers. In addition, saturation of the out-of-plane spin polarization in both layers occurs only under high magnetic fields, supporting a canted spin texture. Our results call for a new mechanism for the QAH effect and highlight the potential of TMD moiré materials with strong electronic correlations and spin-orbit interactions for exotic topological states. Published by the American Physical Society 2024
2-dimensional systems↗
Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes
We report electrically tunable spin singlet and triplet exciton emission from atomically aligned transition metal dichalcogenide (TMD) heterostructures. Furthermore, the observation of these states in both 0° and 60° heterostructures provides the stacking orientation degree of freedom for polarization switching in interlayer excitons. We confirm the spin configurations of the light-emitting excitons employing magnetic fields to measure effective exciton g factors. The interlayer tunneling current across the TMD heterostructure enables the electrical generation of singlet and triplet exciton emission in this atomically thin p-n junction. We demonstrate tunability between the singlet and triplet exciton photoluminescence via electrostatic gates and excitation power. By tuning the gates and interlayer bias voltage, the electroluminescence of the singlet and triplet can be switched with ratios of 10:1. Atomically thin TMD heterostructure light-emitting diodes thus enable a route for optoelectronic devices that can configure spin and valley quantum states independently.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗