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At least 19 records

Chalcogenide Perovskite YScS 3 as a Potential p-Type Transparent Conducting Material

Transparent conducting materials (TCMs) have been widely used in optoelectronic applications such as touchscreens, flat panel displays and thin film solar cells. These applications of TCMs are currently dominated by n-type doped oxides. High-performance p-type TCMs are still lacking due to their low hole mobility or p-type doping bottleneck, which impedes efficient device design and novel applications such as transparent electronics. Here, based on first-principles calculations, we propose chalcogenide perovskite YScS 3 as a promising p-type TCM. According to our calculations, its optical absorption onset is above 3 eV, which allows transparency to visible light. Its hole conductivity effective mass is 0.48m 0 , which is among the smallest in p-type TCMs, suggesting enhanced hole mobility. It could be doped to p-type by group-II elements on cation sites, all of which yield shallow acceptors. Here, combining these properties, YScS 3 holds great promise to enhancing the performance of p-type TCMs toward their n-type counterparts.

36 MATERIALS SCIENCE↗

Recent Progress in Transparent Conductive Materials for Photovoltaics

Transparent conducting materials (TCMs) are essential components for a variety of optoelectronic devices, such as photovoltaics, displays and touch screens. In recent years, extensive efforts have been made to develop TCMs with both high electrical conductivity and optical transmittance. Based on material types, they can be mainly categorized into the following classes: metal oxides, metal nanowire networks, carbon-material-based TCMs (graphene and carbon nanotube networks) and conjugated conductive polymers (PEDOT:PSS). This review will discuss the fundamental electrical and optical properties, typical fabrication methods and the applications in solar cells for each class of TCMs and highlight the current challenges and potential future research directions.

14 SOLAR ENERGY↗

Methods of epsilon-near-zero optical modulation

A method of optical modulation in a non-resonant epsilon-near-zero (EMZ) plasmonic electro-optical modulator is provided. An optical carrier is injected into a waveguide optically coupled to a layer of transparent conductive material having an epsilon-near-zero (ENZ) wavelength. The transparent conductive material layer constitutes a portion of a capacitive structure that includes a gate dielectric layer. A time-varying bias voltage applied across the gate dielectric layer shifts the ENZ wavelength toward the carrier wavelength, and thereby impresses a phase modulation pattern on the carrier wave.

Wood, Michael↗

Nonlinear Loss Engineering in Near‐Zero‐Index Bulk Materials

Transparent conducting oxides (TCOs) show unprecedented optical nonlinearities in the near infrared wavelength range, where the real part of their linear refractive index approaches zero. More specifically, the Kerr nonlinearities of these materials have sparked widespread attention due to their magnitude and speed. However, due to the absorptive nature of these nonlinear processes, it is of fundamental interest to further investigate the imaginary component of the nonlinear index. The present work studies the nonlinear optical absorption properties of aluminium‐doped zinc oxide (AZO) thin films in their near‐zero‐index (NZI) spectral window. It is found that the imaginary part of the refractive index is reduced under optical excitation such that the field penetration depth more than doubles. An optically induced shift of the NZI bandwidth of ≈120 nm for a pump intensity of 1.3 TW cm −2 is also demonstrated. Looking into the optically induced spectral redistribution of the probe signal, local net gain is recorded, which is ascribed to a nonlinear adiabatic energy transfer. The present study adds key information about the fundamental interplay between real and imaginary nonlinear indices in NZI media, while advancing parametric amplification as viable direction for loss compensation.

36 MATERIALS SCIENCE↗

Silver Nanowire-Indium Zinc Oxide Composite Flexible Transparent Conducting Electrodes Made by Spin- coating and Photonic Curing

Realizing high-throughput, low-cost perovskite solar cell (PSC) manufacturing is highly sought-after in photovoltaic (PV) research in recent years. To fully achieve roll-to-roll (R2R) manufacturing of PSCs, it is important to consider the flexible transparent electrode (TE). PET/ITO is a commonly used substrate for making flexible PSCs. When optimizing transparent conducting materials, there is a tradeoff between sheet resistance (Rsh) and optical transparency. Because commercial PET/ITO substrates are made with slow (~1 m/min) vacuum deposition processes, they tend to be expensive. Therefore, it would be advantageous to develop a high-throughput, R2R compatible, solution-deposition approach for fabricating the TE on PET substrates. While various solution-deposition processes, such as blade coating or slot-die coating, can achieve the desired web speed of > 10 m/min, there is still a need to improve the post-deposition annealing step. One promising post-deposition processing technique is intense-pulsed-light processing, also known as photonic curing. Photonic curing delivers short (0.01 – 100 ms) pulses of broadband (200 – 1500 nm) light from a xenon flash lamp to the samples. Any materials in the sample stack that absorb light will convert the impinging light pulse into heat within the sample, which drives changes in the sample (calcination, phase change, crystallization, etc.). Photonic curing has three main advantages over thermal annealing: 1. Faster processing speed (milliseconds or seconds). 2. Compatibility with plastic substrates. 3. Smaller physical footprint and less wasted energy. Since the light pulses are on for a short time, the intensity can be high while the total energy delivered to the sample is low, minimizing damages to the plastic substrates. In this work, a hybrid TE material is fabricated on PET substrates using photonic curing. The hybrid TE material contains a layer of silver nanowires (AgNWs) and a layer of metal-oxide (InOx, ITO, IZO, etc.). The AgNWs increase the light absorbed by the film during the photonic curing process, which leads to higher processing temperatures, possibly improving the conversion of the metal-oxide layer. The AgNWs also enhance the electrical conductivity of the final TE layer after photonic curing. A AgNW and metal-oxide bilayer is formed by spin coating each solution onto the PET substrate sequentially followed by a single photonic curing process. We use average optical transmittance (Tavg) from 400 to 700 nm and average Rsh to evaluate the TE performance. The following photonic curing parameters are varied to optimize Tavg (maximize) and Rsh (minimize): Pulse voltage, pulse envelope, number of micro-pulses, duty cycle, number of pulses, and pulse repetition rate. Preliminarily, we also observe a significant impact on the TE properties by the volume of AgNW deposited during the spin coating deposition step. Using dispense volumes of 80 µL and 20 µL, we achieve samples with Tavg = 73%, Rsh = 19 Ω/sq, and roughness = 9 nm, and Tavg = 83%, Rsh = 58 Ω/sq, and roughness = 5.6 nm, respectively, after photonic curing.

14 SOLAR ENERGY↗

Freestanding SrNbO 3 membranes as flexible transparent conductors

Synthesizing flexible transparent conducting materials is important for applications in flexible optoelectronics. Metallic oxide membranes offer great promise due to their large elasticity and high transparency. Among them, SrNbO 3 , a correlated metal, stands out as a promise transparent conducting oxide. However, synthesizing freestanding SrNbO 3 membranes poses a challenge because it easily undergoes oxidation, resulting in degraded conductivity. To address this, we utilize epitaxial BaTiO 3 capping layers, which effectively prevents SrNbO 3 oxidation. We successfully fabricate millimeter-sized transparent conducting BaTiO 3 /SrNbO 3 /BaTiO 3 membranes using water-soluble sacrificial layers. The obtained SrNbO 3 (10 nm thick) membrane exhibits a room temperature sheet resistance (R S ) of 174 Ω/sq and a transmittance (T) of 92% at a wavelength of 550 nm. The figure of merit (T 10 /R S ) of this transparent conductor reaches 2.2 × 10 −3 Ω −1 in the visible regime, comparable to SrNbO 3 films on rigid substrates. These results open possibilities for applications as flexible transparent conductors.

Ko, Eun Kyo [SLAC National Accelerator Laboratory ↗

Boron phosphide as a p-type transparent conductor: Optical absorption and transport through electron-phonon coupling

Boron phosphide has recently been identified as a potential high-hole-mobility transparent conducting material. This promise arises from its low hole effective masses. However, boron phosphide has a relatively small, 2 eV, indirect bandgap which will affect its transparency. In this study, we computationally study both optical absorption across the indirect gap and phonon-limited electronic transport to quantify the potential of boron phosphide as a p-type transparent conductor. We find that phonon-mediated indirect optical absorption is weak in the visible spectrum and that the phonon-limited hole mobility is very high (around 900 cm 2 /Vs) at room temperature. This exceptional mobility comes from the combination of a low hole effective mass and very weak scattering by polar phonon modes. We rationalize the weak scattering by the less ionic bonding in boron phosphide compared to oxides. We suggest that this could be a general advantage of nonoxides for p-type transparent conducting applications. Using our computed properties, we assess the transparent conductor figure of merit of boron phosphide and show that it exceeds by one order of magnitude that of established p-type transparent conductors, confirming the potential of this material.

36 MATERIALS SCIENCE↗

Heterogeneous Structural Evolution of In–Zn–O Thin Films during Annealing

Amorphous In-Zn-O (a-IZO) thin films are among the most promising transparent conducting materials. Applications of a-IZO include thin film transistors for display technology and photovoltaic devices. However, the use of this material in practical devices has been impeded by limitations in our understanding of the relationship between a-IZO film structure and electrical properties. Here, we use in situ X-ray reflectivity to provide experimental evidence for a vertically heterogeneous, thermally induced structural relaxation that had been predicted for amorphous oxide films but not previously observed. The structural relaxation is shown to be dependent on the thermal annealing environment. Complementary in situ current-voltage curves and ex situ Van der Pauw measurements further show that thermal annealing also influences the electrical performance of the films. Here our results suggest that both oxygen uptake and structural relaxation contribute to the reduction in free carriers within a-IZO films during postdeposition processing. The structural heterogeneity and loss of carriers that occur during thermal annealing are only partly reversible. We anticipate that this insight into the structure-processing-property relationships within a-IZO will help to enable a-IZO-based devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High optical transparent two-dimensional electronic conducting system and process for generating same

Hybrid transparent conducting materials are disclosed with combine a polycrystalline film and conductive nanostructures, in which the polycrystalline film is “percolation doped” with the conductive nanostructures. The polycrystalline film preferably is a single atomic layer thickness of polycrystalline graphene, and conductive nanostructures preferably are silver nanowires.

Alam, Muhammad Ashraful↗

High optical transparent two-dimensional electronic conducting system and process for generating same

Hybrid transparent conducting materials are disclosed which combine a polycrystalline film and conductive nanostructures, in which the polycrystalline film is “percolation doped” with the conductive nanostructures. The polycrystalline film preferably is a single atomic layer thickness of polycrystalline graphene, and the conductive nanostructures preferably are silver nanowires.

Alam, Muhammad Ashraful↗

Rain droplet erosion mechanisms in transparent plastic materials

Tests were conducted to determine the damaging effects of rain erosion on optically transparent materials. The rotating arm test equipment used for the tests is described. Typical transparent materials such as those found in windshields, infrared windows, lasers, and television systems were tested. Nominal velocities of 400, 500, and 600 miles per hour and rainfall conditions of one inch per hour simulated rainfall were used in the tests. It was determined that an 80 percent reduction in laser transmittance can occur in plastics submitted to rain erosion. Significant results of the environmental tests are explained.

Schmitt, G. F., Jr.↗

A model to separate conduction and radiation in high temperature laser flash measurements for semi-transparent materials

Laser flash analysis (LFA) is a widely used technique in the scientific and industrial communities for measuring the thermal diffusivity and conductivity of materials. However, traditional fitting methods based solely on heat conduction do not account for radiation heat transfer in transparent and semi-transparent materials, which becomes significant at high temperatures. In this study, we have developed a coupled radiation-conduction model that considers the optical properties of materials to accurately extract thermal diffusivity from LFA measurements. We conducted LFA measurements on fused silica glass samples of varying thicknesses and within the temperature range of 25 to 1000 °C and fitted the data with the model. Since the coupled model requires optical properties as input parameters, which are often unavailable for new materials, we have also proposed a modified transparent model. Compared to the coupled model, results from the modified transparent model generally overestimate thermal conductivity, but the errors are acceptable in silica glass with small thickness. Here, we also investigated the applicability of the modified transparent model with materials of different optical properties.

14 SOLAR ENERGY↗

Transparent conductive coatings

Thin film transparent conductors are discussed. Materials with electrical conductivity and optical transparency are highly desirable in many optoelectronic applications including photovoltaics. Certain binary oxide semiconductors such as tin oxide (SnO2) and indium oxide (In2O3) offer much better performance tradeoff in optoelectronics as well as better mechanical and chemical stability than thin semitransparent films. These thin-film transparent conductors (TC) are essentially wide-bandgap degenerate semiconductors - invariably n-type - and hence are transparent to sub-bandgap (visible) radiation while affording high electrical conductivity due to the large free electron concentration. The principal performance characteristics of TC's are, of course, electrical conductivity and optical transmission. The TC's have a refractive index of around 2.0 and hence act as very efficient antireflection coatings. For using TC's in surface barrier solar cells, the photovoltaic barrier is of utmost importance and so the work function or electron affinity of the TC is also a very important material parameter. Fabrication processes are discussed.

Ashok, S.↗

Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells

Silicon heterojunction (SHJ) solar cell efficiencies are limited by parasitic absorption from the hydrogenated amorphous silicon (a-Si:H) front contact, but this may be mitigated by selecting an alternative carrier selective contact material with a wider band gap. When choosing such a material as the hole-selective contact (“p-layer”), the alignment of the material's valence band edge energy (E VB ) with that of crystalline silicon (c-Si) is an important criterion, but several other material parameters can also influence the band bending at the contact interface. Here, we simulate an (n)c-Si/(i)a-Si:H/p-layer interface to explore the influence of six materials parameters in a variable p-layer on the SHJ performance. We find a strong influence on the fill factor (FF) from thickness, doping, and E VB , and on V OC from the interfacial defect density; notably, optimal E VB is ~ 0.1 eV higher than the valence band edge energy of a-Si:H. Multiparameter sensitivity analyses demonstrate how performance is simultaneously influenced by E VB and doping; thus, both parameters should be optimized alongside one another. To assess the influence of these parameters experimentally, we grow p-type NiO x as a test-case p-layer, which shows that FFs decrease with the oxygen content likely from the increased misalignment of E VB . Although modest efficiencies are achieved experimentally (>7%), what is important is that our model simulates performance trends. With these results, we apply a materials discovery pipeline to suggest new materials (e.g., ZnTe and BeTe) to try as p-layers in the SHJ. This combination of simulations, experiments, and materials discovery informs a better understanding of contact selection in SHJ cells.

14 SOLAR ENERGY↗

The Role of Phonons and Oxygen Vacancies in Non-Cubic SrVO 3

Combining neutron diffraction with pair distribution function analysis, we have uncovered hidden reduced symmetry in the correlated metallic d 1 perovskite, SrVO 3 . Specifically, we show that both the local and global structures are better described using a GdFeO 3 distorted (orthorhombic) model as opposed to the ideal cubic ABO 3 perovskite type. Recent reports of imaginary phonon frequencies in the density functional theory (DFT)-calculated phonon dispersion for cubic SrVO 3 suggest a possible origin of this observed non-cubicity. Namely, the imaginary frequencies computed could indicate that the cubic crystal structure is unstable at T = 0 K. However, our DFT calculations provide compelling evidence that point defects in the form of oxygen vacancies, and not an observable symmetry breaking associated with calculated imaginary frequencies, primarily result in the observed non-cubicity of SrVO 3 . These experimental and computational results are broadly impactful because they reach into the thin-film and theoretical communities who have shown that SrVO 3 is a technologically viable transparent conducting oxide material and have used SrVO 3 to develop theoretical methods, respectively.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride

Both gallium oxide and gallium nitride have great potential for use as high power transparent conducting oxide materials for a wide range of optoelectronic applications. It is, therefore, important to determine the dynamic optical field breakdown for these materials. Here, we report laser damage thresholds for Ga 2 O 3 and GaN using 9 fs few-cycle pulses with a center wavelength near 760 nm. We determine laser-induced damage thresholds (LIDTs) for both single pulse and multi-pulse exposures, with multi-pulse LIDT showing significant reduction compared to single pulse LIDT (in some cases, >50%), possibly due to laser-induced defects. We show that Ga 2 O 3 and GaN have an ultrafast optical field breakdown of 23 and 18 GV/m when nearly polarized along their [010] and [111] planes, respectively, extending their suitability for high power applications to the ultrashort pulse regime. To accurately characterize the excited carrier density criteria in which apparent laser damage occurs, carrier excitation dynamics for the entire laser pulse interaction were simulated using a modified Keldysh ionization model. For the measured single-shot threshold fluences, the plasma critical density was surpassed by 2 orders of magnitude and 2D finite-difference time-domain simulations were employed to understand the pulse interaction near the surface.

Tripepi, Michael↗

Improved Transparent Furnace For Crystal-Growth Experiments

Novel design and fabrication process for transparent crystal-growing furnace developed. Design consists of one or more heater zones in which heating wire coiled around insides of quartz tubes. Ampoule of material supported inside furnace by guide wire. Crystal then grown by directional freezing of material in ampoule. Distinct feature of use of quartz is capability of direct visual observation of crystal-growth process during experiment. Study of transparent electronic materials conducted in new furnaces.

Rosenthal, Bruce N.↗

Optically Transparent Split-Ring Antennas for 1 to 10 GHz

Split-ring antennas made from optically transparent, electrically conductive films have been invented for applications in which there are requirements for compact antennas capable of operation over much or all of the frequency band from 1 to 10 GHz. Primary examples of such applications include wireless local-area networks and industrial, scientific, and medical (ISM) applications. These antennas can be conveniently located on such surfaces as those of automobile windows and display screens of diverse hand-held electronic units. They are fabricated by conventional printed-circuit techniques and can easily be integrated with solid-state amplifier circuits to enhance gain. The structure of an antenna of this type includes an antenna/feed layer supported on the top or outer face of a dielectric (e.g., glass) and, optionally, a ground layer on the bottom or inner face of the substrate. The ring can be in the form of either a conductive strip or a slot in the antenna/feed layer. The ring can be of rectangular, square, circular, elliptical, or other suitable shape and can be excited by means of a microstrip, slot line, or coplanar waveguide. For example, the antenna shown in the figure features a square conductive-strip split ring with a microstrip feed. In general, an antenna fed at its external boundary in the manner of this invention presents very high impedance, thereby creating an impedance-matching problem. Splitting the ring . that is, cutting a notch through the ring . offers a solution to the problem in that the notch fixes the location of maximum electric field, which location is directly related to the impedance. Thus, an excellent impedance match can be achieved through proper choice of the location of the notch. In geometric layout, such a ring antenna structure is typically between 1.4 and 1.3 the size of a patch antenna capable of operating in the same frequency range. This miniaturization of the antenna is desirable, not only because it contributes to overall miniaturization of equipment, but also because minimization of the extent of the optically transparent, electrically conductive film helps to minimize the electrical loss associated with the surface resistance ( 5 ohms per square) of the transparent, electrically conductive film material. Incidentally, even at 5 ohms per square, this surface resistance is significantly less than that of indium tin oxide film (typically > 25 ohms per square), which, heretofore has been the transparent, electrically conductive film material of choice. At the time of writing this article, information on the composition of the lower-resistance film used in the antennas of this invention was not available.

Lee, Richard Q.↗