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Results for “transparent semiconductors”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Efficient photovoltaic heterojunctions of indium tin oxides on silicon

Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60

Dubow, J. B.↗
NASA NTRS1994

Cubic GaS: A Surface Passivator For GaAs

Thin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.

Hepp, Aloysius F.↗
NASA NTRS1993

Transparent conductive coatings in the far ultraviolet

In certain cases a space-borne optical instrument with a dielectric window requires a transparent conductive coating deposited on the window to remove the electrostatic charge collected due to the bombardment of ionized particles. Semiconductor and metal films are studied for use as transparent conductive coatings for the front window of far ultraviolet camera. Cr is found to be the best coating material. The theoretical search for the semiconductor and metal coating materials and experimental results for ITO and Cr films are reported.

Kim, Jongmin↗
NASA NTRS1983

Transparent conductive coatings

Thin film transparent conductors are discussed. Materials with electrical conductivity and optical transparency are highly desirable in many optoelectronic applications including photovoltaics. Certain binary oxide semiconductors such as tin oxide (SnO2) and indium oxide (In2O3) offer much better performance tradeoff in optoelectronics as well as better mechanical and chemical stability than thin semitransparent films. These thin-film transparent conductors (TC) are essentially wide-bandgap degenerate semiconductors - invariably n-type - and hence are transparent to sub-bandgap (visible) radiation while affording high electrical conductivity due to the large free electron concentration. The principal performance characteristics of TC's are, of course, electrical conductivity and optical transmission. The TC's have a refractive index of around 2.0 and hence act as very efficient antireflection coatings. For using TC's in surface barrier solar cells, the photovoltaic barrier is of utmost importance and so the work function or electron affinity of the TC is also a very important material parameter. Fabrication processes are discussed.

Ashok, S.↗
NASA NTRS2015

Advanced Antireflection Coatings for High-Performance Solar Energy Applications

Phase II objectives: Develop and refine antireflection coatings incorporating lanthanum titanate as an intermediate refractive index material; Investigate wet/dry thermal oxidation of aluminum containing semiconductor compounds as a means of forming a more transparent window layer with equal or better optical properties than its unoxidized form; Develop a fabrication process that allows integration of the oxidized window layer and maintains the necessary electrical properties for contacting the solar cell; Conduct an experimental demonstration of the best candidates for improved antireflection coatings.

Pan, Noren↗
NASA NTRS1985

High-Output Injection Laser

Terraced double-heterojunction large optical cavity laser features high output in single optical mode. Semiconductor laser consists of body of single-crystal semiconductor material, typically composed of Group III to V compounds in form of rectangular parallelepiped. One of laser end faces partially transparent so that light may be emitted from it. Lateral thickness variation of active and guide layers in semiconductor laser produces confinement of propagating laser beam in lateral direction.

Connolly, J. C.↗
NASA NTRS1967

Fused diode provides visual indication of fuse condition

Fused diode combines a semiconductor diode and a circuit protective fuse within a common transparent cartridge. It provides visual indication of fuse condition which precludes the necessity of making resistance checks with an ohmmeter.

Jenkins, K. H.↗
NASA NTRS2003

Improved Crystal Quality by Detached Solidification in Microgravity

The goals of our work on detached solidification have been to: Develop a complete understanding of all of the phenomena of detached solidification; Make it possible to achieve detached solidification reproducibly; Increase crystallographic perfection through detached solidification. Specifically, we aimed in this project to: Identify a system and develop methods that would allow viewing of the melt surface and convection in the melt during detached solidification in microgravity; Improve understanding of the origination and evolution of detachment through experiments and theoretical treatments; Achieve detachment on earth. The project resulted in 14 publications, 15 presentations, completion of 2 Ph.D. theses, and completion of 2 M.S. theses. Two additional papers are currently being reviewed for publication. Copies of most of the papers are attached as appendices. Among the accomplishments are: Achievement of detached solidification of InSb on earth and determination of the conditions favoring detachment on earth. Development of a new method for coating the interior of silica growth ampoules with transparent boron nitride, which yields the high contact angles for semiconductor melts that favor detachment. Development of a new coating for the interior of Pyrex ampoules yielding very high contact angles for water and molten organic compounds. Development of a material-balance model for steady detached solidification that provides greatly improved insight into the process, both in microgravity and on earth. Dimensionless parameters were found that clarify the role of operating conditions and physical properties. The reason for the occurrence of two steady states was clarified, along with their relative stability. Observation of periodic gas tubes during directional solidification of water and organic compounds. Gas bubbles did not propagate around the periphery to yield full detachment. Failure to obtain detachment is attributed to the ready plastic deformation of these materials, so that the frozen material continues to adhere to the ampoule wall during cooling.

Regel, Liya L.↗
NASA NTRS2016

Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

Singh, N. B.↗
NASA NTRS2016

Growth Mechanism of Nanowires: Ternary Chalcogenides

In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

Singh, N. B.↗
NASA NTRS1982

Gravity-driven convection studies in compound semiconductor crystal growth by physical vapor transport

Experimental results are summarized, and it is pointed out that gravity-driven convection can alter the diffusive-advective mass transport behavior in the growth of crystals by physical vapor transport. Specially designed and constructed transparent furnaces are described which are being used to study the effects of gravity in the crystal growth of the compound semiconductors PbTe and CdTe. The theory underlying vapor transport behavior is reviewed, with attention given to the vapor-solid behavior of compound materials, to one-dimensional mass transport, and to gravity-induced (natural) convection. In the transparent furnaces, the quartz capillary tube mounted along the axis of the main quartz ampoule is used to measure the temperature at the growth surface (vapor-solid crystal interface) and the source, as well as the complete temperature profile along the axis of the tube. The light-pipe works to remove heat from the growth end of the ampoule by radiative heat transfer. The ampoules are sealed after being evacuated to the low 10 to the -8th torr range with a cryogenic vacuum pump.

Zoutendyk, J. A.↗
NASA NTRS1981

Time delay and integration detectors using charge transfer devices

An imaging system comprises a multi-channel matrix array of CCD devices wherein a number of sensor cells (pixels) in each channel are subdivided and operated in discrete intercoupled groups of subarrays with a readout CCD shift register terminating each end of the channels. Clock voltages, applied to the subarrays, selectively cause charge signal flow in each subarray in either direction independent of the other subarrays. By selective application of four phase clock voltages, either one, two or all three of the sections subarray sections cause charge signal flow in one direction, while the remainder cause charge signal flow in the opposite direction. This creates a form of selective electronic exposure control which provides an effective variable time delay and integration of three, six or nine sensor cells or integration stages. The device is constructed on a semiconductor sustrate with a buried channel and is adapted for front surface imaging through transparent doped tin oxide gates.

Mccann, D. H.↗
NASA NTRS1992

Properties Of Plasma-Deposited Amorphous Hydrogenated Carbon

Report reviews experimental research on plasma-deposited films of hydrogenated amorphous carbon. Such films exhibit electrical resistivity, semi-transparency, mechanical hardness, and chemical inertness. Useful as gate dielectrics and passivating layers in semiconductor devices, insulators for metal/insulator/metal devices, and masks in nanometer lithography. Show promise as wear-resistant, hard solid lubricating coats for bearings and optical components.

Miyoshi, Kazuhisa↗
NASA NTRS2007

Mosaic-Detector-Based Fluorescence Spectral Imager

A battery-powered, pen-sized, portable instrument for measuring molecular fluorescence spectra of chemical and biological samples in the field has been proposed. Molecular fluorescence spectroscopy is among the techniques used most frequently in laboratories to analyze compositions of chemical and biological samples. Heretofore, it has been possible to measure fluorescence spectra of molecular species at relative concentrations as low as parts per billion (ppb), with a few nm spectral resolution. The proposed instrument would include a planar array (mosaic) of detectors, onto which a fluorescence spectrum would be spatially mapped. Unlike in the larger laboratory-type molecular fluorescence spectrometers, mapping of wavelengths to spatial positions would be accomplished without use of relatively bulky optical parts. The proposed instrument is expected to be sensitive enough to enable measurement of spectra of chemical species at relative concentrations <1 ppb, with spectral resolution that could be tailored by design to be comparable to a laboratory molecular fluorescence spectrometer. The proposed instrument (see figure) would include a button-cell battery and a laser diode, which would generate the monochromatic ultraviolet light needed to excite fluorescence in a sample. The sample would be held in a cell bounded by far-ultraviolet-transparent quartz or optical glass. The detector array would be, more specifically, a complementary metal oxide/ semiconductor or charge-coupled- device imaging photodetector array, the photodetectors of which would be tailored to respond to light in the wavelength range of the fluorescence spectrum to be measured. The light-input face of the photodetector array would be covered with a matching checkerboard array of multilayer thin film interference filters, such that each pixel in the array would be sensitive only to light in a spectral band narrow enough so as not to overlap significantly with the band of an adjacent pixel. The wavelength interval between adjacent pixels (and, thus, the spectral resolution) would typically be chosen by design to be approximately equal to the width of the total fluorescence wavelength range of interest divided by the number of pixels. The unitary structure comprising the photodetector array overlaid with the matching filter array would be denoted a hyperspectral mosaic detector (HMD) array.

Son, Kyung-Ah↗
NASA NTRS2000

Convection Induced by High Frequency Rotating Magnetic Field in Ionic Aqueous Solutions

Rotating magnetic fields (RMF) have found applications in modern metallurgy. Examples are casting and semiconductor crystal growth technology. Rotating convective flows can also be induced in ionic fluids. Due to optical transparency, these fluids offer a great opportunity to visualize convection. In this work, we investigate the dynamics of convection induced by a high frequency (100 kHz range) RMF. A dye injected into a cylindrical column of salty water serves as an indicator of the flow. The developed technique has been used to study mixing phenomena induced by a RMF both when the direc'tion of the field rotation is constant and when it is alternated. Optical recording has been used to analyze this process. A numerical model describing RMF mixing in the laminar regime will also be presented.

Volz, Martin P.↗