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Results for “trimethylaluminum”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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7 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1960

Combustion of Highly Reactive Fuels in Supersonic Airstreams

The feasibility of adding heat to supersonic airstreams by combustion was studied in a small wind tunnel. Aluminum borohydride, pentaborane, hydrocarbon-aluminum borohydride mixtures, trimethylaluminum, diethylaluminum hydride, alkylboranes, alkylboron hydrides and vinylsilane were tested. The first three ignited easily and burned well. The others either failed to ignite or burned only in the diffuser. Trimethylaluminum and diethylaluminum hydride produced light and other evidence of heat evolution when water was simultaneously injected into the tunnel. Gross effects on flow were studied by observation of shock patterns and water sprays injected from the tunnel walls. Examples are given which illustrate the use of these techniques in aerodynamic studies in larger wind tunnels.

Fletcher, Edward A.↗
NASA NTRS1983

Photodeposition of aluminum oxide and aluminum thin films

Uniform films of Al2O3 have been photodeposited using an excimer laser operating at 248 nm (KrF) or at 193 nm (ArF) and trimethylaluminum and N2O as the reactants. Deposition rates were typically 2000 A/min and the physical, chemical, and electrical properties of the photodeposited Al2O3 films are comparable to films deposited using conventional techniques. Properties of photodeposited aluminum films are also presented.

Solanki, R.↗
NASA NTRS1984

Photodeposition of Nitride Insulators on 3-5 Substrates

Laser assisted chemical vapor deposition (LCVD) of nitride insulators, using an excimer laser operating on either KrF or ArF transitions (248 nm or 193 nm respectively) was explored. The properties of silicon nitride films Deposited with 193 nm photons on quartz and silicon substrates in a SiH4, NH3, N2 and He mixture are discussed. Aluminum films were deposited at substrate temperatures from room temperature to 200 C using 248 nm or 193 nm photons to dissociate trimethylaluminum (TMA). Deposition of Al films were investigated to isolate problems associated with TMA such as C and O contamination during AlN depositions. The Al film properties were evaluated on SiO2 and Si substrates. Preliminary results were obtained for aluminum nitride films using TMA and NH3 as the gas phase Al and N donors. The properties of Cr films deposited over areas 5 square cm using 193 nm or 248 nm photons to dissociate Cr(CO) were investigated.

Collins, G. J.↗
NASA NTRS1990

Atmospheric pressure organometallic vapor-phase epitaxial growth of (Al/x/Ga/1-x/)0.51In0.49P (x from 0 to 1) using trimethylalkyls

This paper describes growth of (Al/x/Ga/1-x)0.51In0.49P layers (with x from 0 to 1) lattice-matched to (001)-oriented GaAs substrates by atmospheric-pressure OMVPE, using trimethylindium, trimethylaluminum, and trimethylgallium and PH3 as source materials in a horizontal reactor. Excellent surface morphologies were obtained over the entire range of Al compositions at a growth temperature of 680 C. Photoluminescence (PL) was observed for all samples with x values not below 0.52, with PL peak energies as high as 2.212 eV. The PL FWHM for Ga(0.51)In(0.49)P was 7.2 meV at 10 K and 35 meV at 300 K. At 10 K, the PL intensity was nearly a constant over the composition range from x = 0 to 0.52.

Cao, D. S.↗
NASA NTRS1992

Growth and characterizaton of 3C-SiC and 6H-SiC films on 6H-SiC wafers

Single crystal SiC films were grown by CVD on vicinal (0001) SiC wafers cut from boules produced by the modified sublimation method. Wafers with tilt angles less than 0.5 deg yielded 3C-SiC; tilt angles of 3 to 4 deg resulted in 6H-SiC films. The surface morphology of these films, up to 24 microns thick, were investigated as a function of growth parameters such as the Si/C ratio in the input gases and the presence of dopant materials such as nitrogen and trimethylaluminum.

Powell, J. A.↗
NASA NTRS1992

Ignition delays, heats of combustion, and reaction rates of aluminum alkyl derivatives used as ignition and combustion enhancers for supersonic combustion

The subject of this paper is the design of supersonic combustors which will be required in order to achieve the needed reaction rates in a reasonable sized combustor. A fuel additive approach, which is the focus of this research, is the use of pyrophorics to shorten the ignition delay time and to increase the energy density of the fuel. Pyrophoric organometallic compounds may also provide an ignition source and flame stabilization mechanism within the combustor, thus permitting use of hydrocarbon fuels in supersonic combustion systems. Triethylaluminum (TEA) and trimethylaluminum (TMA) were suggested for this application due to their high energy density and reactivity. The objective here is to provide comparative data for the ignition quality, the energy content, and the reaction rates of several different adducts of both TEA and TMA. The results of the experiments indicate the aluminum alkyls and their more stable derivatives reduce the ignition delay and total reaction time to JP-10 jet fuel. Furthermore, the temperature dependence of ignition delay and total reaction time of the blends of the adducts are significantly lower than in neat JP-10.

Ryan, Thomas W., III↗