EXPERIMENTAL INVESTIGATION OF A 90 DEG FLAT-PLATE MAGNETIC TRIODE FOR DIRECT ENERGY CONVERSION
A 90-degree flat-plate triode for direct energy conversion - thermionics
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A 90-degree flat-plate triode for direct energy conversion - thermionics
Cadmium sulfide thin film vacuum analog triodes
Development of thin film space charge limited triode
Thin film space-charge-limited triode employing dielectric surface gate structure
Silicon-sapphire space charge limited triode development
Thin film silicon on sapphire space charge limited triodes
Germanium solid state triode controlling electron currents of space charge limited regime by means of gate conductors in solid state diode
Electrostatic grid controls conduction cycle of thermionic diode to convert low dc output voltages to high ac power without undesirable power loss. An ac voltage applied to the grid of this new thermionic triode enables it to convert heat directly into high voltage electrical power.
Triode is constructed from rectangular filament made of near-intrinsic n-type silicon. Collector and emitter are formed on opposite faces of filament and are spaced approximately 0.13 mm apart. Gate electrodes are alloyed to filament and extend longitudinally along midsection of other two opposite sides, approximately 0.06 mm apart.
A solid-state triode is provided from a wafer of nearinstrinsic semiconductor material sliced into filaments of rectangular cross section. Before slicing, emitter and collector regions are formed on the narrow sides of the filaments, and after slicing gate regions are formed in arrow strips extending longitudinally along the midsections of the wide sides of the filaments. Contacts are then formed on the emitter, collector and gate regions of each filament individually for a single filament device, or in parallel for an array of filament devices to increase load current.
The fabrication techniques of integrated vacuum circuits are described in detail. Data obtained from a specially designed test circuit are presented. The data show that the emission observed in reverse biased devices is due to cross-talk between the devices and can be eliminated by electrostatic shielding. The lifetime of the cathodes has been improved by proper activation techniques. None of the cathodes on life test has shown any sign of failure after more than 3500 hours. Life tests of triodes show a decline of anode current by a factor of two to three after a few days. The current recovers when the large positive anode voltage (100 V) has been removed for a few hours. It is suggested that this is due to trapped charges in the sapphire substrate. Evidence of the presence of such charges is given, and a model of the charge distribution is presented consistent with the measurements. Solution of the problem associated with the decay of triode current may require proper treatment of the sapphire surface and/or changes in the deposition technique of the thin metal films.
Over a decade of cesium vapor thermionic converter research has yielded sufficient understanding of the basic plasma processes to permit application of this understanding to improvement of converter performance. A performance index is defined which relates such converter improvements directly to increases in system performance. A prime practical objective of current research is to reduce or eliminate the arc potential drop presently required to sustain the plasma in the ignited cesium diode. This will substantially increase the energy conversion efficiency, and will permit operation at substantially lower emitter temperatures without requiring lower collector (heat rejection) temperature. Present work is concentrating on evaluating and reducing to practice the several methods employing auxiliary ion sources to eliminate the arc drop which were demonstrated over a decade ago: i.e., various ignited and unignited triode concepts, and the pulse-enhanced diode and triode. These methods are reviewed in light of present understanding and recent experimental data.
The objective is to improve thermionic converter performance by means of reduced interelectrode losses, greater emitter capabilities, and lower collector work functions until the converter performance level is suitable for out-of-core space reactors and radioisotope generators. Electrode screening experiments have identified several promising collector materials. Back emission work function measurements of a ZnO collector in a thermionic diode have given values less than 1.3 eV. Diode tests were conducted over the range of temperatures of interest for space power applications. Enhanced mode converter experiments have included triodes operated in both the surface ionization and plasmatron modes. Pulsed triodes were studied as a function of pulse length, pulse potential, inert gas fill pressure, cesium pressure, spacing, emitter temperature and collector temperature. Current amplifications (i.e., mean output current/mean grid current) of several hundred were observed up to output current densities of one amp/sq cm. These data correspond to an equivalent arc drop less than 0.1 eV.
Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.
Thin film triodes, magnetic permeability films, metal base transistor devices, inductors, dielectrics, and high frequency substrates for communications and telemetry system
Semiconductor devices, tunnel diodes, transistors, varactor diodes, vacuum tube amplifiers, triodes, klystrons, and traveling wave tubes for communication satellite output devices
Improved thin film triodes of cadmium selenide and tellurium, metal based transistor junctions, and substrate evaluation
Thin film triode fabrication, metal base transistor, and circuit design for thin film personal communications and telemetry system