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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Synthesis and Photodriven Hydrogenation of Tungsten Nitride Complexes Prepared from Dinitrogen Cleavage

Oxidation of the Chatt-type tungsten dinitrogen compound, trans-(depe) 2 W(N 2 ) 2 (depe = Et 2 PCH 2 CH 2 PEt 2 ), with [(η 5 -C 5 H 5 ) 2 Fe][BAr F 4 ] (BAr F 4 = B(3,5-(CF 3 ) 2 C 6 H 3 ) 4 ) resulted in isolation of [(depe) 2 WN][BAr F 4 ], a rare example of a tungsten(IV) nitride prepared from N 2 cleavage. A bimetallic μ-N 2 ditungsten intermediate supported by terminal N 2 ligands was identified, and irradiation with visible light promoted dinitrogen cleavage and formation of [(depe) 2 WN][BAr F 4 ]. Performing the analogous one-electron oxidation of the related tungsten dinitrogen compound, trans-(dppe) 2 W(N 2 ) 2 (dppe = Ph 2 PCH 2 CH 2 PPh 2 ), furnished the corresponding cationic, 17-electron tungsten dinitrogen complex, [(dppe) 2 W(N 2 ) 2 ][BAr F 4 ], that was characterized by X-ray diffraction and vibrational and EPR spectroscopies. The generation of [(dppe) 2 W(N)][BAr F 4 ] was observed in low yield from the in situ formed mixed N 2 -bridged compound, [(N 2 )(depe) 2 W(μ-N 2 )W(dppe) 2 (N 2 )][BAr F 4 ] 2 , and was confirmed by independent synthesis using 1-azidoadamantane. Addition of ammonia or water to [(depe) 2 WN][BAr F 4 ] resulted in formation of the cationic imide and hydroxide complexes, [(depe) 2 W(NH)(X)][BAr F 4 ] (X = NH 2 , OH). Irradiation of [(depe) 2 WN][BAr F 4 ] with 440 nm visible light in the presence of Ir(ppy) 3 (ppy = 2-phenylpyridine) under 4 atm of dihydrogen resulted in hydrogenation of the tungsten nitride to the cationic tungsten pentahydride, [(depe) 2 WH 5 ][BAr F 4 ], with the release of free ammonia in 21% yield, a rare example of ammonia generation from dinitrogen and dihydrogen from a well-defined tungsten nitride.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Localizing Tungsten Single Atoms around Tungsten Nitride Nanoparticles for Efficient Oxygen Reduction Electrocatalysis in Metal–Air Batteries

Combining isolated atomic active sites with those in nanoparticles for synergizing complex multistep catalysis is being actively pursued in the design of new electrocatalyst systems. However, these novel systems have been rarely studied due to the challenges with synthesis and analysis. Herein, a synergistically catalytic performance is demonstrated with a 0.89 V (vs reversible hydrogen electrode) onset potential in the four-step oxygen reduction reaction (ORR) by localizing tungsten single atoms around tungsten nitride nanoparticles confined into nitrogen-doped carbon (W SAs/WNNC). Through density functional theory calculations, it is shown that each of the active centers in the synergistic entity feature a specific potential-determining step in their respective reaction pathway that can be merged to optimize the intermediate steps involving scaling relations on individual active centers. Impressively, the W SAs/WNNC as the air cathode in all-solid-state Zn-air and Al-air batteries demonstrate competitive durability and reversibility, despite the acknowledged low activity of W-based catalyst toward the ORR.

25 ENERGY STORAGE↗

High‐Pressure Synthesis of Ultra‐Incompressible, Hard and Superconducting Tungsten Nitrides

Abstract Transition metal nitrides, particularly those of 5 d metals, are known for their outstanding properties, often relevant for industrial applications. Among these metal elements, tungsten is especially attractive given its low cost. In this high‐pressure investigation of the W–N system, two novel ultra‐incompressible tungsten nitride superconductors, namely W 2 N 3 and W 3 N 5 , are successfully synthesized at 35 and 56 GPa, respectively, through a direct reaction between N 2 and W in laser‐heated diamond anvil cells. Their crystal structure is determined using synchrotron single‐crystal X‐ray diffraction. While the W 2 N 3 solid's sole constituting nitrogen species are N 3‐ units, W 3 N 5 features both discrete N 3‐ as well as N 2 4‐ pernitride anions. The bulk modulus of W 2 N 3 and W 3 N 5 is experimentally determined to be 380(3) and 406(7) GPa, and their ultra‐incompressible behavior is rationalized by their constituting WN 7 polyhedra and their linkages. Importantly, both W 2 N 3 and W 3 N 5 are recoverable to ambient conditions and stable in air. Density functional theory calculations reveal W 2 N 3 and W 3 N 5 to have a Vickers hardness of 30 and 34 GPa, and superconducting transition temperatures at ambient pressure (50 GPa) of 11.6 K (9.8 K) and 9.4 K (7.2 K), respectively. Additionally, transport measurements performed at 50 GPa on W 2 N 3 corroborate with the calculations.

Chemistry↗

Amorphous metallic films in silicon metallization systems

Diffusion barrier research was focussed on lowering the chemical reactivity of amorphous thin films on silicon. An additional area of concern is the reaction with metal overlays such as aluminum, silver, and gold. Gold was included to allow for technology transfer to gallium arsenide PV cells. Amorphous tungsten nitride films have shown much promise. Stability to annealing temperatures of 700, 800, and 550 C were achieved for overlays of silver, gold, and aluminum, respectively. The lower results for aluminum were not surprising because there is an eutectic that can form at a lower temperature. It seems that titanium and zirconium will remove the nitrogen from a tungsten nitride amorphous film and render it unstable. Other variables of research interest were substrate bias and base pressure during sputtering.

So, F.↗

Synthesis of LaWN 3 nitride perovskite with polar symmetry

Perovskite structured materials have a variety of uses as photovoltaics, capacitors, and micromechanical actuators, along with other applications. Oxides, halides, and chalcogenides all have large numbers of perovskite structured materials. Examples of perovskite nitrides are conspicuously absent, but Talley et al managed to synthesize one (see the Perspective by Hong). Lanthanum tungsten nitride in the perovskite structure turns out to be piezoelectric, which is ideal for a variety of applications. Perovskite structured nitrides are very attractive because they could easily integrate with the large number of nitride-based semiconducting devices already in use.

36 MATERIALS SCIENCE↗

Simulation of Gas Mixtures in RF Discharges for Nitride Deposition

Tungsten and titanium nitride films have long been grown by chemical vapor deposition (CVD) methods. However, there has been recent interest in low temperature growth using plasma enhanced CVD. For the present work, we focus on the radio frequency (BE) discharge characteristics of gas mixtures used in nitride deposition (for example, WF6 and ammonia). Because the radial variations for a standard 200 mm, parallel plate reactor are limited to a small zone near the edges of the electrodes, a 1-D (one-dimensional) analysis is considered. This model consists of a self-consistent, 3-D (three-dimensional) moment fluid simulation that solves the continuity, momentum, and energy equations for neutral and charged species. The results in terms of plasma structure, radical concentrations, and local deposition rate will be presented. We will also compare the 1-D results with those obtained from a 2-D hybrid plasma equipment model (HPEM) developed at the University of Illinois.

Hwang, Helen H.↗

Bismuth Passivation Technique for High-Resolution X-Ray Detectors

The Athena-plus team requires X-ray sensors with energy resolution of better than one part in 3,000 at 6 keV X-rays. While bismuth is an excellent material for high X-ray stopping power and low heat capacity (for large signal when an X-ray is stopped by the absorber), oxidation of the bismuth surface can lead to electron traps and other effects that degrade the energy resolution. Bismuth oxide reduction and nitride passivation techniques analogous to those used in indium passivation are being applied in a new technique. The technique will enable improved energy resolution and resistance to aging in bismuth-absorber-coupled X-ray sensors. Elemental bismuth is lithographically integrated into X-ray detector circuits. It encounters several steps where the Bi oxidizes. The technology discussed here will remove oxide from the surface of the Bi and replace it with nitridized surface. Removal of the native oxide and passivating to prevent the growth of the oxide will improve detector performance and insulate the detector against future degradation from oxide growth. Placing the Bi coated sensor in a vacuum system, a reduction chemistry in a plasma (nitrogen/hydrogen (N2/H2) + argon) is used to remove the oxide and promote nitridization of the cleaned Bi surface. Once passivated, the Bi will perform as a better X-ray thermalizer since energy will not be trapped in the bismuth oxides on the surface. A simple additional step, which can be added at various stages of the current fabrication process, can then be applied to encapsulate the Bi film. After plasma passivation, the Bi can be capped with a non-diffusive layer of metal or dielectric. A non-superconducting layer is required such as tungsten or tungsten nitride (WNx).

Chervenak, James↗

Polynomial Expressions for Estimating Elastic Constants From the Resonance of Circular Plates

Two approaches were taken to make convenient spread sheet calculations of elastic constants from resonance data and the tables in ASTM C1259 and E1876: polynomials were fit to the tables; and an automated spread sheet interpolation routine was generated. To compare the approaches, the resonant frequencies of circular plates made of glass, hardened maraging steel, alpha silicon carbide, silicon nitride, tungsten carbide, tape cast NiO-YSZ, and zinc selenide were measured. The elastic constants, as calculated via the polynomials and linear interpolation of the tabular data in ASTM C1259 and E1876, were found comparable for engineering purposes, with the differences typically being less than 0.5 percent. Calculation of additional v values at t/R between 0 and 0.2 would allow better curve fits. This is not necessary for common engineering purposes, however, it might benefit the testing of emerging thin structures such as fuel cell electrolytes, gas conversion membranes, and coatings when Poisson s ratio is less than 0.15 and high precision is needed.

Salem, Jonathan A.↗

Thermophysical Properties of a Uranium Nitride–Molybdenum-Tungsten Composite Fuel for Nuclear Thermal Propulsion

The thermal conductivity of a ceramic-metal composite consisting of 60 vol % uranium nitride incorporated into a molybdenum-tungsten matrix has been measured up to a temperature of 1200°C. Compositing nuclear fuel with refractory materials is considered a viable way to improve the thermal and mechanical properties of fuels, and more recently, has been investigated as a way to improve hydrogen compatibility in a nuclear thermal propulsion rocket reactor. Here, we demonstrate that high-density composites can be produced from direct current sintering and that the resulting thermal conductivity is improved compared to the pure.

33 ADVANCED PROPULSION SYSTEMS↗

Preparation of refractory cermet structures for lithium compatibility testing

High-purity nitride and carbide cermets were synthesized for compatability testing in liquid lithium. A process was developed for the preparation of high-purity hafnium nitride powder, which was subsequently blended with tungsten powder or tantalum nitride and tungsten powders and fabricated into 3 in diameter billets by uniaxial hot pressing. Specimens were then cut from the billets for compatability testing. Similar processing techniques were applied to produce hafnium carbide and zirconium carbide cermets for use in the testing program. All billets produced were characterized with respect to chemistry, structure, density, and strength properties.

Heestand, R. L.↗

Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films

Ferroelectric hafnium zirconium oxide holds great promise for a broad spectrum of complementary metal–oxide–semiconductor (CMOS) compatible and scaled microelectronic applications, including memory, low-voltage transistors, and infrared sensors, among others. An outstanding challenge hindering the implementation of this material is polarization instability during field cycling. Herein, the nanoscale phenomena contributing to both polarization fatigue and wake-up are reported. Using synchrotron X-ray diffraction, the conversion of non-polar tetragonal and polar orthorhombic phases to a non-polar monoclinic phase while field cycling devices comprising noble metal contacts is observed. This phase exchange accompanies a diminishing ferroelectric remanent polarization and provides device-scale crystallographic evidence of phase exchange leading to ferroelectric fatigue in these structures. A reduction in the full width at half-maximum of the superimposed tetragonal (101) and orthorhombic (111) diffraction reflections is observed to accompany wake-up in structures comprising tantalum nitride and tungsten electrodes. Combined with polarization and relative permittivity measurements, the observed peak narrowing and a shift in position to lower angles is attributed, in part, to a phase exchange of the non-polar tetragonal to the polar orthorhombic phase during wake-up. These results provide insight into the role of electrodes in the performance of hafnium oxide-based ferroelectrics and mechanisms driving wake-up and fatigue, and demonstrate a non-destructive means to characterize the phase changes accompanying polarization instabilities.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗