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At least 19 records

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NASA NTRS1972

Exploratory development and services for preparing and examining ultrathin polished sections of lunar rocks and particulates, part 1

Development of improved procedures is reported for three classes of lunar materials: dense rocks, breccias, and particulates. High quality ultrathin sections of these materials are obtained. Lists of equipment and supplies, procedures, photomicrographic documentation, and training are provided. Advantages of ultrathin polished sections for conventional and unconventional optical microscopy methods are described. Recommendations are provided for use of ultrathin sections in lunar rock studies, for further refinement of ultrathinning procedures, and for additional training efforts to establish a capability at the Manned Space Center. For Part 2, See N72-50754.

Beauchamp, R. H.↗

NASA NTRS2011

Real-Time Deposition Monitor for Ultrathin Conductive Films

A device has been developed that can be used for the real-time monitoring of ultrathin (2 or more) conductive films. The device responds in less than two microseconds, and can be used to monitor film depositions up to about 60 thick. Actual thickness monitoring capability will vary based on properties of the film being deposited. This is a single-use device, which, due to the very low device cost, can be disposable. Conventional quartz/crystal microbalance devices have proven inadequate to monitor the thickness of Pd films during deposition of ultrathin films for hydrogen sensor devices. When the deposited film is less than 100 , the QCM measurements are inadequate to allow monitoring of the ultrathin films being developed. Thus, an improved, high-sensitivity, real-time deposition monitor was needed to continue Pd film deposition development. The new deposition monitor utilizes a surface acoustic wave (SAW) device in a differential delay-line configuration to produce both a reference response and a response for the portion of the device on which the film is being deposited. Both responses are monitored simultaneously during deposition. The reference response remains unchanged, while the attenuation of the sensing path (where the film is being deposited) varies as the film thickness increases. This device utilizes the fact that on high-coupling piezoelectric substrates, the attenuation of an SAW undergoes a transition from low to very high, and back to low as the conductivity of a film on the device surface goes from nonconductive to highly conductive. Thus, the sensing path response starts with a low insertion loss, and as a conductive film is deposited, the film conductivity increases, causing the device insertion loss to increase dramatically (by up to 80 dB or more), and then with continued film thickness increases (and the corresponding conductivity increases), the device insertion loss goes back down to the low level at which it started. This provides a continuous, real-time monitoring of film deposition. For use with different films, the device would need to be calibrated to provide an understanding of how film thickness is related to film conductivity, as the device is responding primarily to conductivity effects (and not to mass loading effects) in this ultrathin film regime.

Hines, Jacqueline↗

NASA NTRS1993

Heteroepitaxial InP, and ultrathin, directly glassed, GaAs 3-5 solar cells

The commercial application of Indium Phosphide solar cells in practical space missions is crucially dependent upon achieving a major cost reduction which could be offered by heteroepitaxy on cheaper, more rugged substrates. Furthermore, significant mass reduction, compatibility with mechanically stacked multijunction cells, and elimination of the current loss through glue discoloration, is possible in III-V solar cells by the development of ultrathin, directly glassed cells. The progress of a UK collaborative program to develop high efficiency, homojunction InP solar cells, grown by MOCVD on Si substrates, is described. Results of homoepitaxial cells (is greater than 17 percent 1 Sun AM0) are presented, together with progress in achieving low dislocation density heteroepitaxy. Also, progress in a UK program to develop ultrathin directly-glassed GaAs cells is described. Ultrathin (5 micron) GaAs cells, with 1 Sun AM0 efficiencies up to 19.1 percent, are presented, together with progress in achieving a direct (adhesive-less) bond between the cell and coverglass. Consequential development to, for example, cell grids, are also discussed.

Hardingham, C. M.↗

NASA NTRSDate not supplied

A Multifunctional Bistable Ultrathin Composite Boom for In-Space Monitoring of Deployment Dynamics

A novel concept of a multifunctional deployable ultrathin composite boom with flexible electronics and circuits integrated in a highly compact configuration, which can monitor its deployment dynamics in space, is presented in this paper. This concept is particularly suitable for CubeSats with extremely limited payload volume. The multifunctional deployable boom will be flight hardware installed in a 3U CubeSat that is scheduled to be launched to the International Space Station (ISS) in 2023 as an in-space technology demonstration. The multifunctional boom consists of a bistable self-deployable ultrathin composite boom, flexible electronics and circuitry for dynamics monitoring, and embedded flexible thin wires for power delivery and data transmission. The design, materials, and fabrication methods for the multifunctional boom are presented. Tests in simulated space environments showed the survivability and stability of the flexible electronics within a temperature range of 7 °C to 50 °C and under a high vacuum level of approximately 1 × 10−6 Torr. Ground-based vibration and deployment tests demonstrated the overall design of the multifunctional boom, data acquisition system, and deployment mechanism. Analyses of the data obtained from the integrated flexible electronics successfully captured the deployment dynamics and identified the natural frequencies of the boom in the range of 0–100 Hz. These results demonstrate that the concept is a promising approach to future multifunctional ultrathin deployable space structures.

Yao Yao↗

NASA NTRSDate not supplied

A Multifunctional Bistable Ultrathin Composite Boom for In-Space Monitoring of Deployment Dynamics

Yao Yao↗

NASA NTRS1979

High efficiency ultrathin silicon solar cells

This paper summarizes developments in ultrathin, (50 micron), silicon solar cells for high power-to-weight ratio space power systems. The fabrication technology developments included uniformly thinning oriented silicon slices, enhancement of internal reflection, optimizing high-temperature processes, surface texturing and back surface field enhancement. The best textured-surface ultrathin cells have achieved 14.3% AMO efficiency, while pilot-manufacturing quantities of smooth-surfaced cells have been fabricated with efficiencies of 12%. Data are presented on cell structure, fabrication collection efficiencies and optical properties.

Storti, G.↗

NASA NTRS1990

Study of temperature-dependent ultrathin oxide growth on Si(111) using variable-angle spectroscopic ellipsometry

The monolayer-sensitive variable-angle spectroscopic ellipsometry technique was used to study the temperature-dependent growth mechanisms of an ultrathin oxide layer on top of silicon. The oxidation was done in atomic oxygen produced in a pure oxygen plasma and driven by an RF power source. The results have been compared with the recently proposed model of Murali and Murarka for ultrathin oxide growth on top of silicon. The activation energies of different growth parameters associated with the oxide growth have also been determined.

De, Bhola N.↗

NASA NTRS1993

Optical response of an ultrathin film and a large-angle grain-boundary in superconducting YBa2Cu3O(7-delta)

We have investigated the optical response of epitaxial ultrathin (3 nm) YBa2Cu3O(7-delta) film on an NdGaO3 substrate and thin (50 nm) film of YBa2Cu3O(7-delta) on a bicrystal SrTiO3 substrate. While the current-voltage characteristics of the ultrathin film indicate a Kosterlitz-Thouless transition (associated with vortex-antivortex unbinding) at a temperature T(KT), we do not observe any optical response at or below T(KT). An enhanced optical response with nonbolometric characteristics was observed from the grain-boundary as compared to the bolometric optical response of the epitaxial film at the resistive transition. These results indicate that the grain-boundary weak links play a significant role in the enhanced optical response near Tc.

Bhattacharya, S.↗

NASA NTRS1967

Precision trimmer aids in preparing biomedical specimen blocks for ultrathin sectioning

Precision trimmer, which neatly trims biomedical specimen blocks for ultrathin sectioning, eliminates the risk of human error. Four inches in diameter and 3 inches in height, it supports the block and serves as a support for a cutting tool and can be adjusted in three dimensions.

Tahmisian, T. N.↗

NASA NTRS1979

Ultrathin films as photomechanical transducer

Stretched ultrathin, metallized polyimide film is used as photochemical transducer for detection and measurement of total exposure to light. Film is potential nonelectrical replacement for solar cells.

Fedors, R. F.↗

NASA NTRS1978

Ultrathin metallized PBI paper

A study to determine the feasibility of preparing ultrathin papers with a target weight of 3.5 g/m squared from polybenzimidazole (PBI) fibrids was undertaken. Small hand sheets of target weight were fabricated. They were light brown, low density materials with sufficient strength to be readily handleable. Characterization of these sheets included strength, fold endurance, thermal gravimetric analysis in air and nitrogen and photomicrographs. Two different batches of PBI fibrids were studied and differences in fabrication performance were noted. In neither case could target weight papers be prepared using conventional paper making techniques.

Chenevey, E. C.↗

NASA NTRS1979

Ultrathin films as photomechanical transducers

In order to investigate the photomechanical effect in ultrathin films, several commercially available polymers of various structure and properties have been studied experimentally below the glass transition temperature. In the experiments using an Instron test machine equipped with a 200-g load cell and a microscope stage illuminator as the light source, the load at the fixed strain was recorded as a function of time. Plots of the steady-state change in stress as a function of the intensity of the incident radiation are presented for several of the materials studied. The response is found to be linear; the greater the intensity of the incident radiation, the greater is the change in stress.

Sarbolouki, M. N.↗

NASA NTRS1980

High efficiency ultrathin coplanar back contact cells

Efforts to fabricate high efficiency, ultrathin coplanar back contact cells are described. Included is a description of design considerations, cell fabrication, and theoretical and experimental analyses of loss mechanisms. The results of these efforts has been the fabrication of a 11.8% AM0 efficient, 50 micron cell when measured at 25 C. Design and process changes required to increase the efficiency are indicated.

Storti, G.↗

NASA NTRS2000

Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate Oxide

In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) "atomistic" simulation technique described else-where. MOSFET's with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveal that even in devices with a single crystal gate the gate depletion and the random dopants in it are responsible for a substantial fraction of the threshold voltage fluctuations when the gate oxide is scaled-in the range of 1-2 nm. Simulation experiments have been used in order to separate the enhancement in the threshold voltage fluctuations due to an effective increase in the oxide thickness associated with the gate depletion from the direct influence of the random dopants in the gate depletion layer. The results of the experiments show that the both factors contribute to the enhancement of the threshold voltage fluctuations, but the effective increase in the oxide-thickness has a dominant effect in the investigated range of devices. Simulations illustrating the effect or the polysilicon grain boundaries on the threshold voltage variation are also presented.

Asenov, Asen↗

NASA NTRS1971

Ultrathin gate valve for high vacuum operation

Thin, compact, high-vacuum gate valve used to join two vacuum systems together demonstrates multiple operation reliability. Valve measurements and non-protruding handle make valve usable in confined areas.

Ugiansky, R. J.↗

NASA NTRS1972

Exploratory development and services for preparing and examining ultrathin polished sections of lunar rocks and particulates, part 2

General principles and details of the actual procedure are presented for the preparator. Some background information is given on why certain lapping, polishing, and gluing procedures are needed. It is directed toward the innovative preparator who wishes to further refine procedures or to use some of his own techniques for some steps in the processing sequence. Specific details on the single procedure found to be most successful for lunar dense rocks, breccias, and particulates are outlined. A complete listing of equipment and supplies is appended.

Beauchamp, R. H.↗

NASA NTRS1978

The production of ultrathin polyimide films for the solar sail program and Large Space Structures Technology (LSST): A feasibility study

Polyimide membranes of a thickness range from under 0.01 micron m to greater than 1 micron m can be produced at an estimated cost of 50 cents per sq m (plus the cost of the polymer). The polymer of interest is dissolved in a solvent which is solube in water. The polymer or casting solution is allowed to flow down an inclined ramp onto a water surface where a pool of floating polymer develops. The solvent dissolves into the water lowering the surface tension of the water on equently, the contact angle of the polymer pool is very low and the edge of the pool is very thin. The solvent dissolves from this thin region too rapidly to be replenished from the bulk of the pool and a solid polymer film forms. Firm formation is rapid and spontaneous and the film spreads out unaided, many feet from the leading edge of the pool. The driving force for this process is the exothermic solution of the organic solvent from the polymer solution into the water.

Forester, R. H.↗

NASA NTRS1978

Effects of ultrathin oxides in conducting MIS structures on GaAs

Schottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.

Childs, R. B.↗