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Unconventional unidirectional magnetoresistance in heterostructures of a topological semimetal and a ferromagnet

Unidirectional magnetoresistance (UMR) in a bilayer heterostructure, consisting of a spin-source material and a magnetic layer, refers to a change in the longitudinal resistance on the reversal of magnetization and originates from the interaction of non-equilibrium spin accumulation and magnetization at the interface. Since the spin polarization of an electric-field-induced non-equilibrium spin accumulation in conventional spin-source materials is restricted to be in the film plane, the ensuing UMR can only respond to the in-plane component of magnetization. However, magnets with perpendicular magnetic anisotropy are highly desired for magnetic memory and spin-logic devices, whereas the electrical read-out of perpendicular magnetic anisotropy magnets through UMR is critically missing. Here, in this study, we report the discovery of an unconventional UMR in the heterostructures of a topological semimetal (WTe 2 ) and a perpendicular magnetic anisotropy ferromagnetic insulator (Cr 2 Ge 2 Te 6 ), which allows to electrically read the up and down magnetic states of the Cr 2 Ge 2 Te 6 layer through longitudinal resistance measurements.

Kao, I-Hsuan [Carnegie Mellon Univ., Pittsburgh, P↗

Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures

Unidirectional spin Hall magnetoresistance (USMR) has been widely reported in the heavy metal/ferromagnet bilayer systems. We observe the USMR in Pt/α-Fe 2 ⁢O 3 bilayers where the α-Fe 2 ⁢O 3 is an antiferromagnetic (AFM) insulator. Systematic field and temperature dependent measurements confirm the magnonic origin of the USMR. The appearance of AFM-USMR is driven by the imbalance of creation and annihilation of AFM magnons by spin orbit torque due to the thermal random field. However, unlike its ferromagnetic counterpart, theoretical modeling reveals that the USMR in Pt/α-Fe 2 ⁢O 3 is determined by the antiferromagtic magnon number with a non-monotonic field dependence. In conclusion, our findings extend the generality of the USMR which pave the ways for the highly sensitive detection of AFM spin state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Large Spin-Orbit-Torque Efficiency and Room-Temperature Magnetization Switching in Sr Ir O 3 / Co-Fe-B Heterostructures

Spin-orbit-torque (SOT) switching is a potentially energy-efficient mechanism by which electrical current can control magnetization. We demonstrate room-temperature SOT switching in nanometer-thick Co⁢Fe⁢B/Sr⁢Ir⁢O 3 bilayers despite the amorphous nature of CoFeB and the interface. This behavior is attributed to the large spin Hall angle in Sr⁢Ir⁢O 3 as well as high spin transmission at the interface that contribute to the SOT efficiency ξ SOT . Our bilayers exhibit large ξ SOT of up to 1.4 and effective spin Hall conductivity of 0.9 ×10 5 (ℏ/2e)Ω –1 ⁢m –1 . In our bilayers, we observe unidirectional magnetoresistance and current-induced magnetization switching with a low critical current density of 1.38 ×10 10 A/m 2 at room temperature. Finally, our results are promising for heterostructures combining technologically relevant CoFeB with high spin-orbit-coupling oxides.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Spin orbit torque in ferromagnet/topological-quantum-material heterostructures

The main objective of this proposal was to investigate the spin-orbital driven phenomena in topological insulator (TI)/ferromagnet (FM) or transition metal (TM) heterostructures. In particularly, we tried to utilize the spin-momentum locking properties on the surface of TIs to achieve ideal spin-orbit torques (SOTs). In practice, we found that the surface properties have been greatly modified, resulting in much more complicated magneto-transport behaviors than what is expected in SOT-driven magnetotransport. Through systematic and extended investigations, we start to unravel that the nonlinear magnetotransport properties, which was, in the past, mainly attributed to SOT-driven phenomena, can be used to infer the modification of the electronic band structures of TIs and spin textures in FMs which are closely related with charge-spin interconversion phenomena. Regarding the band structures In TIs, we find under electrostatic perturbations imposed by deposition of nonmagnetic TMs, the quantum well states formed on the surface of TIs develop substantial Rashba spin-splitting, which is detected as a bilinear magnetoresistance (BMR). Under magnetic perturbations, the nonlinear planar Hall effect (NPHE) in the topological surface states is greatly enhanced, possibly reflecting the modified surface band structure due to time-reversal symmetry breaking. In a double HM/FM heterostructure where the magnetic anisotropy can be robustly tuned, we observed second-harmonic Hall voltage responses corresponding to domain wall structures with fixed chirality, stabilized by interfacial Dzyaloshinskii–Moriya interaction (DMI). In addition, in the linear transport regime, we utilized inverse-SHE-induced anomalous Hall effect in Pt to probe the exchange bias on the surface of a doped magnetic insulator Tm 3 Fe 5 O 12 .

36 MATERIALS SCIENCE↗