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Results for “valley degeneracy”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Tuning valley degeneracy with band inversion

Valley degeneracy is a key feature of the electronic structure that benefits the thermoelectric performance of a material. Despite recent studies which claim that high valley degeneracy can be achieved with inverted bands, our analysis of rock-salt IV–VI compounds using first-principles calculations and k•p perturbation theory demonstrates that mere band inversion is an insufficient condition for high valley degeneracy; rather, there is a critical degree to which the bands must be inverted to induce multiple carrier pockets. The so-called “band inversion parameter” is formalized as a chemically-tunable property, offering a design route to achieving high valley degeneracy in compounds with inverted bands. In conclusion, we predict that the valley degeneracy of rock-salt IV–VI compounds can be increased from N V = 4 to N V = 24, which could result in a corresponding increase in the thermoelectric figure of merit zT .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

The Importance of Avoided Crossings in Understanding High Valley Degeneracy in Half‐Heusler Thermoelectric Semiconductors

Abstract Half‐Heusler (hH) compounds are promising candidates for inexpensive, low‐toxicity thermoelectric materials. It is well known that engineering electronic bands with high valley degeneracy is an effective approach for enhancing the performance of thermoelectric materials, and there are several routes for achieving high valley degeneracy in hH systems. For instance, there are multiple locations in the first Brillouin zone where the valence band maximum can be found (at the Γ‐, L‐, or W‐point), and there are two competing low‐lying conduction bands at the X‐point, where the conduction band minimum is located. By converging the multiple valence band and conduction band extrema, the valley degeneracy, and hence, performance of these materials can be improved. Here, group theoretical and tight‐binding approaches, in addition to first‐principles density functional theory calculations, are used to study the chemical origins of various band extrema in both the n‐type and p‐type compounds, with particular focus on ZrNiSn and NbFeSb. Specifically, the importance of avoided crossings is explained. The results of this work can be used to better understand and develop design strategies for engineering better performing hH thermoelectrics.

Brod, Madison K.↗
DOE OSTI2023

Band inversion-driven warping and high valley degeneracy

Band inversion is a physical phenomenon that can warp the band structure in topological insulators, generating multiple electronic valleys for conducting carriers. However, the conditions under which band inversion induces warping are not well understood. Here, we derive two general rules that must be satisfied for band warping to occur in centrosymmetric and non-magnetic topological insulators: (1) bands must be sufficiently inverted, and (2) secondary bands must have opposite parity and be close in energy to the band edges. We chart the valley degeneracies that can emerge from band inversion in each of the 11 centrosymmetric point groups, revealing that an increase in the valley degeneracy between 2- and 48-fold is possible from band inversion. The generalized rules offer a unique band engineering approach by capitalizing on the non-trivial electronic structures of topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ga 4 C-family crystals, a new generation of star thermoelectric materials, achieved by band degeneracies, valley anisotropy, and strong phonon scattering among others

Using density functional theory combined with the Boltzmann transport equation, we uncover a new class of high-performance thermoelectric materials, i.e., supertetrahedral Ga 4 C-family materials characterized by an ultrahigh thermoelectric figure of merit (ZT), which is produced both by a large power factor and ultralow lattice thermal conductivity. The former is contributed by multiple electronic band degeneracies, flat bands and valley anisotropy, while the latter is contributed both by strong phonon scattering and low phonon group velocity. Furthermore, we find that tensile strain engineering may further suppress lattice thermal conductivity, while well retaining the multi-band degeneracies, valley anisotropy and flat bands. In addition to the band degeneracy, the scattering mechanism of the system can also dominate the power factor in the process of strain implementation. Consequently, a novel thermoelectric phenomenon, i.e., a high thermoelectric figure of merit, is observed in Ca 4 C with a ZT value larger than 4.4 under a small strain ratio (0.75%). In conclusion, our theoretical studies not only uncover a new class of high-performance thermoelectric materials integrating multiple effective mechanisms, but also establish a realistic material plateau to investigate the competitive effect of multiple factors on enhancing the thermoelectric figure of merit.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials

Half-Heusler materials are strong candidates for thermoelectric applications due to their high weighted mobilities and power factors, which is known to be correlated to valley degeneracy in the electronic band structure. However, there are over 50 known semiconducting half-Heusler phases, and it is not clear how the chemical composition affects the electronic structure. While all the n-type electronic structures have their conduction band minimum at either the Γ - or X -point, there is more diversity in the p-type electronic structures, and the valence band maximum can be at either the Γ -, L -, or W -point. Here, we use high throughput computation and machine learning to compare the valence bands of known half-Heusler compounds and discover new chemical guidelines for promoting the highly degenerate W -point to the valence band maximum. We do this by constructing an “orbital phase diagram” to cluster the variety of electronic structures expressed by these phases into groups, based on the atomic orbitals that contribute most to their valence bands. Then, with the aid of machine learning, we develop new chemical rules that predict the location of the valence band maximum in each of the phases. These rules can be used to engineer band structures with band convergence and high valley degeneracy.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Site-controlled telecom-wavelength single-photon emitters in atomically-thin MoTe2

Abstract Quantum emitters (QEs) in two-dimensional transition metal dichalcogenides (2D TMDCs) have advanced to the forefront of quantum communication and transduction research. To date, QEs capable of operating in O-C telecommunication bands have not been demonstrated in TMDCs. Here we report site-controlled creation of telecom QEs emitting over the 1080 to 1550 nm telecommunication wavelength range via coupling of 2D molybdenum ditelluride (MoTe 2 ) to strain inducing nano-pillar arrays. Hanbury Brown and Twiss experiments conducted at 10 K reveal clear photon antibunching with 90% single-photon purity. The photon antibunching can be observed up to liquid nitrogen temperature (77 K). Polarization analysis further reveals that while some QEs display cross-linearly polarized doublets with ~1 meV splitting resulting from the strain induced anisotropic exchange interaction, valley degeneracy is preserved in other QEs. Valley Zeeman splitting as well as restoring of valley symmetry in cross-polarized doublets are observed under 8 T magnetic field.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Valley-selective optical Stark effect of exciton-polaritons in a monolayer semiconductor

Selective breaking of degenerate energy levels is a well-known tool for coherent manipulation of spin states. Though most simply achieved with magnetic fields, polarization-sensitive optical methods provide high-speed alternatives. Exploiting the optical selection rules of transition metal dichalcogenide monolayers, the optical Stark effect allows for ultrafast manipulation of valley-coherent excitons. Compared to excitons in these materials, microcavity exciton-polaritons offer a promising alternative for valley manipulation, with longer lifetimes, enhanced valley coherence, and operation across wider temperature ranges. Here, we show valley-selective control of polariton energies in WS 2 using the optical Stark effect, extending coherent valley manipulation to the hybrid light-matter regime. Ultrafast pump-probe measurements reveal polariton spectra with strong polarization contrast originating from valley-selective energy shifts. This demonstration of valley degeneracy breaking at picosecond timescales establishes a method for coherent control of valley phenomena in exciton-polaritons.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Van der Waals heterostructure Pt 2 HgSe 3 / CrI 3 for topological valleytronics

We identify a valley-polarized Chern insulator in a van der Waals heterostructure, monolayer Pt 2 HgSe 3 /monolayer CrI 3 , for potential applications with interplay between electric, magnetic, optical, and mechanical effects. The interlayer proximity magnetic coupling nearly closes the band gap of monolayer Pt 2 HgSe 3 , and the strong intralayer spin-orbit coupling further lifts the valley degeneracy by over 100 meV, leading to positive and negative band gaps at opposite valleys. In the valley with negative gap, the interfacial Rashba spin-orbit coupling opens a topological band gap of 17.8 meV, which is enlarged to 30.8 meV by adding a hexagonal boron nitride (h-BN) layer. We find large orbital magnetization in the Pt 2 HgSe 3 layer that is much larger than spin, which can induce a measurable optical Kerr effect. Additionally, the valley polarization and Chern number are coupled to the magnetic order of the nearest-neighbor CrI3 layer, which is switchable by electric, magnetic, and mechanical means in experiments. The presence of h-BN protects the topological phase, allowing the construction of superlattices with valley, spin, and layer degrees of freedom.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Spin-valley locking and bulk quantum Hall effect in a noncentrosymmetric Dirac semimetal BaMnSb 2

Spin-valley locking in monolayer transition metal dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a Dirac semimetal BaMnSb 2 . This is revealed by comprehensive studies using first principles calculations, tight-binding and effective model analyses, angle-resolved photoemission spectroscopy measurements. Moreover, this material also exhibits a stacked quantum Hall effect (QHE). The spin-valley degeneracy extracted from the QHE is close to 2. This result, together with the Landau level spin splitting, further confirms the spin-valley locking picture. In the extreme quantum limit, we also observed a plateau in the z-axis resistance, suggestive of a two-dimensional chiral surface state present in the quantum Hall state. These findings establish BaMnSb 2 as a rare platform for exploring coupled spin and valley physics in bulk single crystals and accessing 3D interacting topological states.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Broken symmetries and excitation spectra of interacting electrons in partially filled Landau levels

Interacting electrons in flat bands give rise to a variety of quantum phases. One fundamental aspect of such states is the ordering of the various flavours – such as spin or valley – that the electrons can undergo and the excitation spectrum of the broken symmetry states that they form. These properties cannot be probed directly with electrical transport measurements. The zeroth Landau level of monolayer graphene with four-fold spin-valley degeneracy is a model system for such investigations, but the nature of its broken symmetry states – particularly at partial fillings – is still not understood. Here, in this study, we demonstrate a non-invasive spectroscopic technique with a scanning tunneling microscope and use it to perform measurements of the valley polarization of the electronic wavefunctions and their excitation spectrum in the partially filled zeroth Landau level of graphene. We can extract information such as the strength of Haldane pseudopotentials that characterize the repulsive interactions underlying the fractional quantum states. Our experiments also demonstrate that fractional quantum Hall phases are built upon broken symmetry states that persist at partial filling. Our experimental approach quantifies the valley phase diagram of the partially filled Landau level as a model flat band platform which is applicable to other graphene-based electronic systems.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Suppressing Charged Cation Antisites via Se Vapor Annealing Enables p-Type Dopability in AgBiSe 2 –SnSe Thermoelectrics

Cation disordering is commonly found in multinary cubic compounds, but its effect on electronic properties has been neglected because of difficulties in determining the ordered structure and defect energetics. An absence of rational understanding of the point defects present has led to poor reproducibility and uncontrolled conduction type. AgBiSe 2 is a representative compound that suffers from poor reproducibility of thermoelectric properties, while the origins of its intrinsic n-type conductivity remain speculative. Here, it is demonstrated that cation disordering is facilitated by Bi Ag charged antisite defects in cubic AgBiSe 2 which also act as a principal donor defect that greatly controls the electronic properties. Using density functional theory calculations and in situ Raman spectroscopy, how saturation annealing with selenium vapor can stabilize p-type conductivity in cubic AgBiSe 2 alloyed with SnSe at high temperatures is elucidated. With stable and controlled hole concentration, a peak is observed in the weighted mobility and the density-of-states effective mass in AgBiSnSe 3 , implying an increased valley degeneracy in this system. These findings corroborate the importance of considering the defect energetics for exploring the dopability of ternary thermoelectric chalcogenides and engineering electronic bands by controlling self-doping.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Quantum octets in high mobility pentagonal two-dimensional PdSe 2

Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe 2 sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm 2 /Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Suppression of Midinfrared Plasma Resonance Due to Quantum Confinement in δ-Doped Silicon

The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:δ layers—atomically thin sheets of phosphorus dopants in silicon that induce electronic properties beyond traditional doping. Previously it was shown that P:δ layers produce a distinct Drude tail feature in ellipsometry measurements. However, the ellipsometric spectra could not be properly fit by modeling the δ layer as a discrete layer of classical Drude metal. In particular, even for large broadening corresponding to extremely short relaxation times, a plasma resonance feature was anticipated but not evident in the experimental data. In this work, we develop a physically accurate description of this system, which reveals a general approach to designing thin films with intentionally suppressed plasma resonances. Our model takes into account the strong charge-density confinement and resulting quantum mechanical description of a P:δ layer. Here, we show that the absence of a plasma resonance feature results from a combination of two factors: (i) the sharply varying charge-density profile due to strong confinement in the direction of growth; and (ii) the effective mass and relaxation time anisotropy due to valley degeneracy. The plasma resonance reappears when the atoms composing the δ layer are allowed to diffuse out from the plane of the layer, destroying its well-confined two-dimensional character that is critical to its distinctive electronic properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Polaritonic Chern Insulators in Monolayer Semiconductors

Systems with strong light-matter interaction open up new avenues for studying topological phases of matter. Examples include exciton polaritons, mixed light-matter quasiparticles, where the topology of the polaritonic band structure arises from the collective coupling between matter wave and optical fields strongly confined in periodic dielectric structures. Distinct from light-matter interaction in a uniform environment, the spatially varying nature of the optical fields leads to a fundamental modification of the well-known optical selection rules, which were derived under the plane wave approximation. Here, in this study, we identify polaritonic Chern insulators by coupling valley excitons in transition metal dichalcogenides to photonic Bloch modes in a dielectric photonic crystal slab. We show that polaritonic Dirac points, which are markers for topological phase transition points, can be constructed from the collective coupling between valley excitons and photonic Dirac cones in the presence of both time-reversal and inversion symmetries. Lifting exciton valley degeneracy by breaking time-reversal symmetry leads to gapped polaritonic bands with nonzero Chern numbers. Through numerical simulations, we predict polaritonic chiral edge states residing inside the topological gaps. Our Letter paves the way for the further study of strong exciton-photon interaction in nanophotonic structures and for exploring polaritonic topological phases and their practical applications in polaritonic devices.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2021

Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high-fidelity quantum computing. Here we present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Cascade of electronic transitions in magic-angle twisted bilayer graphene

Magic-angle twisted bilayer graphene exhibits a variety of electronic states, including correlated insulators, superconductors and topological phases. Understanding the microscopic mechanisms responsible for these phases requires determination of the interplay between electron–electron interactions and quantum degeneracy (the latter is due to spin and valley degrees of freedom). Signatures of strong electron–electron correlations have been observed at partial fillings of the flat electronic bands in recent spectroscopic measurements, and transport experiments have shown changes in the Landau level degeneracy at fillings corresponding to an integer number of electrons per moiré unit cell. However, the interplay between interaction effects and the degeneracy of the system is currently unclear. Here in this paper we report a cascade of transitions in the spectroscopic properties of magic-angle twisted bilayer graphene as a function of electron filling, determined using high-resolution scanning tunnelling microscopy. We find distinct changes in the chemical potential and a rearrangement of the low-energy excitations at each integer filling of the moiré flat bands. These spectroscopic features are a direct consequence of Coulomb interactions, which split the degenerate flat bands into Hubbard sub-bands. We find these interactions, the strength of which we can extract experimentally, to be surprisingly sensitive to the presence of a perpendicular magnetic field, which strongly modifies the spectroscopic transitions. The cascade of transitions that we report here characterizes the correlated high-temperature parent phase from which various insulating and superconducting ground-state phases emerge at low temperatures in magic-angle twisted bilayer graphene.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Strong Zeeman splitting in orbital-hybridized valleytronic interfaces

We report stacked heterointerfaces of two-dimensional (2D) materials are well-suited to obtain novel electronic functionality at small length scales, because the intrinsic properties of both materials can be blended by interlayer coupling with remarkable effects on the electronic band structure. In particular, band degeneracy at the K and K' Brillouin zone valleys of 2D materials can be broken by symmetry reductions by applying an external magnetic field, with possible application in valleytronic devices. Nevertheless, this usually requires impractically large external magnetic fields > 100 T. An alternative and more practical route is provided via stacking a non-centrosymmetric layered material on a magnetic substrate to induce valley splitting through the magnetic proximity effect; however, the splitting magnitude can vary sharply between similar interfaces. In this work, first-principle calculations are used to calculate the valley splitting of eight low-strain interfaces with transition metal dichalcogenides stacked on 2D magnetic substrates. It is shown that the interlayer band hybridization plays a major role when the two layers’ bands are closely aligned in energy, with the resulting band repulsion and the total valley splitting being strongly dependent on the Hubbard U correction , showing up to an order of magnitude change. The WSe 2 /CrGeTe 3 interface in particular shows strong interlayer interactions, which can potentially lead to a significantly high valley splitting of 26 meV; however further experimental investigations will be needed to resolve uncertainties in the predicted valley splitting.

36 MATERIALS SCIENCE↗