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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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9 records

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NASA NTRS1974

A varistor technique to reduce the hazards of electrostatics to electroexplosive devices

Inherent to the design and construction of electroexplosive devices is a vulnerability to inadvertent initiation from electrostatic discharges. The small spacing (approx. 1 mm) between the bridgewire circuits and the body and between bridgewire circuits afford easy breakdown paths for electrostatic voltages. In some cases where metallic component pyrotechnic materials are loaded onto the bridgewire circuits the susceptability to inadvertant initiation is increased. An approach to solving this problem is reported based on the application of a new varistor (nonlinear resistor) material. Certain formulations of metal oxides normally have electrically nonconductive characteristics. However, at selective potentials they become conductive. By proper design and incorporation into electroexplosive devices a variety of breakdown potentials can be achieved. The breakdown potential of the varistor element can be adjusted to meet the requirements of the particular electroexplosive device. The varistor element can also be incorporated in an area isolated from the explosive or pyrotechnic material. Adaptation of this technique to a specific electroexplosive device and the resulting test data are presented.

Menichelli, V. J.↗

NASA NTRS1985

Theoretical efficiency for triplers using nonideal varistor diodes at submillimeter wavelengths

The theoretical efficiency for frequency triplers mutliplying from 300 to 900 GHz has been calculated for nonideal GaAs Schottky diodes operating in the varistor mode. The maximum efficiency is determined to be about 7 percent, only slightly smaller than that for ideal varistors. Guidelines for optimum bias conditions and embedding network impedances have been determined using the large-signal analysis computer program of Siegel and Kerr (1980).

Benson, K.↗

NASA NTRS1979

Direct observation of voltage barriers in ZnO varistors

Voltage barriers in a ZnO varistor have been imaged by voltage-contrast scanning electron microscopy. They are due to grain boundaries and are capable of supporting voltage differences of up to about 4 V.

Krivanek, O. L.↗

NASA NTRS1981

An integrated control panel utilizing a programmable varistor-multiplexed dichroic liquid crystal display

Due to the conflicting demands of modern aircraft for increased systems/sensors and the decrease in cockpit panel size, weight, volume, and power, conventional discrete/dedicated methods of display and control are fast becoming obsolete. A means is sought to integrate the control and display into multifunctional programmable devices, thus giving the ability to increase system functions and yet conserve panel space. A potential solution to the control portion of the problem has come to be known as the Integrated Control Panel (ICP) approach. Flat panel display technology and controls using programmable flat panel displays with transparent capacitive touch control overlays offer the largest potential advantages. The flat panel display made of varistor-multiplexed dichroic liquid crystal (LCD) developed by GE in recent years appears to offer the ideal monochrome solution.

Whitton, I. J.↗

NASA NTRS1992

Quantum-well diode frequency multipliers - Varistor case

Local oscillators for heterodyne receivers at submillimeter wavelengths are typically made using a fundamental source followed by a harmonic frequency multiplier. An investigation of the required circuit embedding conditions for a possible new harmonic generator, the quantum-well resonant-tunneling diode, is summarized. A low-frequency multiplier has been tested that employs the resistive nonlinearity of the device as opposed to the reactive nonlinearity. The results show good agreement between practice and theory.

Batelaan, Paul D.↗

NASA NTRS1978

Determination of micro amounts of iron, aluminum, and alkaline earth metals in silicon carbide

A colorimetric method for analysis of micro components in silicon carbide used as the raw material for varistors is described. The microcomponents analyzed included iron soluble in hydrochloric acid, iron, aluminum, calcium and magnesium. Samples were analyzed by the method, and the results for iron and aluminum agreed well with the N.B.S. standard values and the values obtained by the other company. The method can therefore be applied to the analysis of actual samples.

Hirata, H.↗

NASA NTRS1983

Source circuit design considerations

The cost of several circuit configurations for large (5MW) array fields were investigated to assess the relative costs of high and low voltage configurations. Three source circuit NOC voltages were evaluated: 400V (ungrounded), 800V (+ or 400V center grounded), and 2000V (+ or - 1000V center grounded). Four source circuit configurations were considered for each of the three NOC voltages. The configurations correspond to source circuit currents of 15, 30, 45, and 60 amperes, respectively. Conceptual layouts for 5MW building blocks for each of the above configurations were developed. The designs were optimized to minimize BOS electrical and structural costs. Only the BOS electrical costs were evaluated. The designs were broken down into the following elements for cost: (1) basic source circuit intermodule wiring, bypass diodes and associated hardware, source circuit to J-Box wiring, etc; (2) J-Box blocking diodes, varistors, heat sinks, and housing; (3) disconnects source circuit disconnects, fuses, and housing; (4) bus cabling J-Box to PCU interface wiring, and trenching; (5) interface bus bar, group disconnects, and fuses; and (6) fault detection shunts, signal wire, electronics, and alarm. It is concluded that high voltage low current circuits are not economical, at higher currents high and low voltage circuit costs approach each other, high voltage circuits are not likely to offer near term advantage, and development work/manufacturer stimulation is needed to develop low cost high voltage hardware.

Noel, G. T.↗

NASA NTRS1987

Theoretical Efficiencies of Microwave Diode Triplers

Report discusses computer simulations of 300- to 900-GHz triplers using nonideal GaAs Schottky diodes operating in varistor mode. Nonlinear boundary-value problem posed by diode state equations not solved in closed form. Consequently, such computer simulations needed to optimize tripler configuration and operating conditions.

Frerking, M. A.↗

NASA NTRS1988

Harmonic multiplication using resonant tunneling

This paper demonstrates the use of resonant-tunneling diodes as varistors for harmonic multiplication. It is shown that efficient odd-harmonic conversion is possible and that even harmonics do not appear because of the antisymmetry of the current-voltage (I-V) curve. It is also shown that, with the proper choice of resonant-tunneling structure and pump amplitude, most of the harmonic output power can be confined to a single odd-harmonic frequency. Fifth-harmonic multiplication was demonstrated with an output at 21.75 GHz and a power conversion efficiency of 0.5 percent, and a fifth-harmonic efficiency of 2.7 percent was achieved in a circuit simulation using an improved I-V curve.

Sollner, T. C. L. G.↗