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Computer program for differential-input voltage- controlled voltage source effects in analysis of distributed lumped active networks
Here, this paper considers the problem of designing a resilient distributed voltage control algorithm for distribution systems with high penetration of distributed energy resources in the presence of an unknown cyber-attack. The purpose of the attack is to force the system to violate the operating voltage limit by intercepting its communication channels and inserting exogenous signals to perturb and/or modify the information being exchanged. We first review the cooperative voltage control proposed in our previous work and provide a new stability analysis for it. Next, we present a resilient cooperative voltage control algorithm by introducing a virtual system interconnected with the original system such that the voltage can be maintained within the operational limit under unknown attacks. The resiliency of the proposed algorithm is demonstrated via simulations on the IEEE 8500-node system when subjected to an attack which consists of corrupting the data being exchanged in the communication network between two generation units.
Voltage fluctuation is one of the most common challenges that electric vehicle charging station (EVCS) may introduce to the power grid. Local reactive power compensation (Q-compensation) capability of bi-directional electric vehicle (EV) chargers can mitigate the steady-state voltage violations caused by the EV charging itself or changes in the neighboring loads. Power buffering, using energy storage system (ESS), can be utilized to address the voltage transients (sags and swells) as a result of EV charging at the EVCS. To address PI controller’s ‘hunting’ issue, this paper proposes a Q-sign triggered deadband voltage control (V-control) method at the point of common coupling (PCC). In addition, to ensure the ramp rate of EV charging is within the allowable limits set forth by the grid code, a ramp rate control is proposed that uses the ESS as a ‘power buffer’. Lastly, different from most reported work in the literature where no explicit limit of the power electronic converters (PECs) is considered, this work considers a reasonable apparent power capacity limit of the PECs when achieving the V-control. This limit also affects the amount of active power that can be obtained from the grid, and subsequently may require ESS to function as ‘load sharing’ device to provide supplemental active power to satisfy EV load. A case study simulated in MATLAB (interfaced with PLECS) is presented to demonstrate the effectiveness of the proposed approaches for EVCS operation.
This paper explores predictive cooperative voltage control in distribution systems with highly variable sources such as photovoltaics (PV). The goal is to maintain the voltage profile within the limits despite the fluctuations due to sudden changes in solar power generation. The predictive voltage control method relies on probabilistic solar power and load forecasts to select the optimum Voltage Regulator (VR) taps appropriately. VR taps are selected to minimize the risk of voltage violation. A modified version of the IEEE 123 system is used as the case study. A 100% penetration of solar power is assumed for the distribution system with profiles for solar generation and loads added to the system. Three different probabilistic forecast models (Quantile Regression (QR), Gaussian distribution and volatility forecasting using Generalized Autoregressive Conditional Heteroskedasticity (GARCH)) are explored in this study. The results for the VR taps and Voltage Deviation Index (VDI) are compared to find the most effective forecast model.
Two new methods of incorporating field effect transistors into circuit designs have resulted in linear response of this type transistor over a wide range of controlled voltage levels. This increases its usefulness as a voltage-controlled resistor.
A voltage controlled oscillator circuit is reported in which there are employed first and second differential amplifiers. The first differential amplifier, being employed as an integrator, develops equal and opposite slopes proportional to an input voltage, and the second differential amplifier functions as a comparator to detect equal amplitude positive and negative selected limits and provides switching signals which gate a transistor switch. The integrating differential amplifier is switched between charging and discharging modes to provide an output of the first differential amplifier which upon the application of wave shaping provides a substantially sinusoidal output signal. A two phased version with a second integrator provides a second 90 deg phase shifted output for induction motor control.
Optical-capacitive coupling is used for isolation of control voltages, such as the high-voltage level of a klystron control electrode that is not referenced to ground, to serve as error voltages referenced to system ground so that the magnitude and sense of correction may be transferred.
In real world operation, low-frequency oscillations associated with plant-level voltage control of inverter-based resources (IBRs) have been a concern of grid operators. Here, this research aims to demonstrate and analyze the effect of plant-level voltage control on system stability and potential interactions among IBRs. The experiment results of a 13.2-kV system interconnected with two IBRs—a 1-MW battery energy storage system (BESS) and a 430-kW solar photovoltaic (PV) plant—are presented. Both 0.5-Hz and 3-Hz oscillations become visible at certain conditions. The phenomenon is further explained by use of a feedback system consisting of the plant-level droop control and the effect of reactive power or var injection on voltage. The main components of the block diagram are obtained via frequency scan measurements. The analysis offers an understanding of the main contributors and other influencing factors of the 3-Hz and 0.5-Hz modes. It also reveals the role of the volt-var droop gain, the low-pass filter time constant, and the system impedance in stability.
Controlled voltage is accomplished by placing metal plate with hole in it near surface of film. During charging, thermoplastic will accumulate charge only until it reaches plate voltage; after that, all charge will be deflected to plate.
Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.
Voltage controlled oscillator /VCXO/ generates a center frequency of 100 MHz with low phase noise. VCXOs at this and lower frequencies are applied to phase-lock-loop detection systems used in tracking receivers and telemetry systems.
Digital voltage-controlled oscillator generates a variable frequency signal controlled linearly about a center frequency with high stability and is phase controlled by an applied voltage. Integration ahead of the digital circuitry provides linear operation with control voltage having appreciable noise components.
In most of the research, a conventional one degree-of-freedom type proportional-integral controller (1DOF-PI) is used for the regulation of the dc bus voltage in an Active Front-End Converter (AFEC). This paper proposes a two degree-of-freedom type proportional-integral controller (2DOF-PI) for the regulation of dc bus voltage in an AFEC. Such a controller eliminates the left-half plane (LHP) zero in the command-to-output transfer function for dc bus voltage regulation that is inherent to the conventional 1DOF-PI for this application. The dynamic model of an AFEC in the synchronous reference frame (SRF) is presented. An inner current control and outer dc voltage control loop is built for controlling the AFEC. Vector-control scheme is employed to achieve decoupled control of direct-axis and quadrature-axis currents. The outer dc voltage control loop is designed with a 2DOF-PI to complete the control system. Transfer function (TF) of the controller is derived based on the presented model and used to calculate the controller gains. Transient and steady state performance of the designed controllers are investigated in MATLAB/Simulink and results presented.
Grid emergency voltage control (GEVC) is paramount in electric power systems to improve voltage stability and prevent cascading outages and blackouts in case of contingencies. While most deep reinforcement learning (DRL)-based paradigms perform single agents in a static environment, real-world agents for GEVC are expected to cooperate in a dynamically shifting grid. Moreover, due to high uncertainties from combinatory natures of various contingencies and load consumption, along with the complexity of dynamic grid operation, the data efficiency and control performance of the existing DRL-based methods are challenged. To address these limitations, we propose a multi-agent graph-attention (GATT)-based DRL algorithm for GEVC in multi-area power systems. Here, we develop graph convolutional network (GCN)-based agents for feature representation of the graph-structured voltages to improve the decision accuracy in a data-efficient manner. Furthermore, a cutting-edge attention mechanism concentrates on effective information sharing among multiple agents, synergizing different-sized subnetworks in the grid for cooperative learning. We address several key challenges in the existing DRL-based GEVC approaches, including low scalability and poor stability against high uncertainties. Test results in the IEEE benchmark system verify the advantages of the proposed method over several recent multi-agent DRL-based algorithms.
Voltage controlled oscillators and pulse amplitude modulation for signal ratio system
Voltage control of magnetism and spintronics have been highly desirable but rarely realized. In this work, we show voltage-controlled spin–orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with voltage administered through SrTiO 3 with a high dielectric constant. We show that a DC voltage can significantly lower PMA by 45%, reduce switching current by 23%, and increase the damping-like torque as revealed by the first- and second-harmonic measurements. These are characteristics that are prerequisites for voltage-controlled and voltage-select SOT switching spintronic devices.
It is possible to synthesize a voltage-controlled negative-differential-resistance (NDR) device or circuit by use of a pair of complementary G4FETs (four-gate field-effect transistors). [For more information about G4FETs, please see the immediately preceding article]. As shown in Figure 1, the present voltage-controlled NDR device or circuit is an updated version of a prior NDR device or circuit, known as a lambda diode, that contains a pair of complementary junction field-effect transistors (JFETs). (The lambda diode is so named because its current-versus- voltage plot bears some resemblance to an upper-case lambda.) The present version can be derived from the prior version by substituting G4FETs for the JFETs and connecting both JFET gates of each G4FET together. The front gate terminals of the G4FETs constitute additional terminals (that is, terminals not available in the older JFET version) to which one can apply control voltages VN and VP. Circuits in which NDR devices have been used include (1) Schmitt triggers and (2) oscillators containing inductance/ capacitance (LC) resonant circuits. Figure 2 depicts such circuits containing G4FET NDR devices like that of Figure 1. In the Schmitt trigger shown here, the G4FET NDR is loaded with an ordinary inversion-mode, p-channel, metal oxide/semiconductor field-effect transistor (inversion-mode PMOSFET), the VN terminal of the G4FET NDR device is used as an input terminal, and the input terminals of the PMOSFET and the G4FET NDR device are connected. VP can be used as an extra control voltage (that is, a control voltage not available in a typical prior Schmitt trigger) for adjusting the pinch-off voltage of the p-channel G4FET and thereby adjusting the trigger-voltage window. In the oscillator, a G4FET NDR device is loaded with a conventional LC tank circuit. As in other LC NDR oscillators, oscillation occurs because the NDR counteracts the resistance in the tank circuit. The advantage of this G4FET-NDR LC oscillator over a conventional LC NDR oscillator is that one can apply a time-varying signal to one of the extra control input terminals (VN or VP) to modulate the conductance of the NDR device and thereby amplitude-modulate the output signal.
A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz