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Computer program for differential-input voltage- controlled voltage source effects in analysis of distributed lumped active networks
Two new methods of incorporating field effect transistors into circuit designs have resulted in linear response of this type transistor over a wide range of controlled voltage levels. This increases its usefulness as a voltage-controlled resistor.
A voltage controlled oscillator circuit is reported in which there are employed first and second differential amplifiers. The first differential amplifier, being employed as an integrator, develops equal and opposite slopes proportional to an input voltage, and the second differential amplifier functions as a comparator to detect equal amplitude positive and negative selected limits and provides switching signals which gate a transistor switch. The integrating differential amplifier is switched between charging and discharging modes to provide an output of the first differential amplifier which upon the application of wave shaping provides a substantially sinusoidal output signal. A two phased version with a second integrator provides a second 90 deg phase shifted output for induction motor control.
Optical-capacitive coupling is used for isolation of control voltages, such as the high-voltage level of a klystron control electrode that is not referenced to ground, to serve as error voltages referenced to system ground so that the magnitude and sense of correction may be transferred.
Controlled voltage is accomplished by placing metal plate with hole in it near surface of film. During charging, thermoplastic will accumulate charge only until it reaches plate voltage; after that, all charge will be deflected to plate.
Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.
Voltage controlled oscillator /VCXO/ generates a center frequency of 100 MHz with low phase noise. VCXOs at this and lower frequencies are applied to phase-lock-loop detection systems used in tracking receivers and telemetry systems.
Digital voltage-controlled oscillator generates a variable frequency signal controlled linearly about a center frequency with high stability and is phase controlled by an applied voltage. Integration ahead of the digital circuitry provides linear operation with control voltage having appreciable noise components.
Voltage controlled oscillators and pulse amplitude modulation for signal ratio system
It is possible to synthesize a voltage-controlled negative-differential-resistance (NDR) device or circuit by use of a pair of complementary G4FETs (four-gate field-effect transistors). [For more information about G4FETs, please see the immediately preceding article]. As shown in Figure 1, the present voltage-controlled NDR device or circuit is an updated version of a prior NDR device or circuit, known as a lambda diode, that contains a pair of complementary junction field-effect transistors (JFETs). (The lambda diode is so named because its current-versus- voltage plot bears some resemblance to an upper-case lambda.) The present version can be derived from the prior version by substituting G4FETs for the JFETs and connecting both JFET gates of each G4FET together. The front gate terminals of the G4FETs constitute additional terminals (that is, terminals not available in the older JFET version) to which one can apply control voltages VN and VP. Circuits in which NDR devices have been used include (1) Schmitt triggers and (2) oscillators containing inductance/ capacitance (LC) resonant circuits. Figure 2 depicts such circuits containing G4FET NDR devices like that of Figure 1. In the Schmitt trigger shown here, the G4FET NDR is loaded with an ordinary inversion-mode, p-channel, metal oxide/semiconductor field-effect transistor (inversion-mode PMOSFET), the VN terminal of the G4FET NDR device is used as an input terminal, and the input terminals of the PMOSFET and the G4FET NDR device are connected. VP can be used as an extra control voltage (that is, a control voltage not available in a typical prior Schmitt trigger) for adjusting the pinch-off voltage of the p-channel G4FET and thereby adjusting the trigger-voltage window. In the oscillator, a G4FET NDR device is loaded with a conventional LC tank circuit. As in other LC NDR oscillators, oscillation occurs because the NDR counteracts the resistance in the tank circuit. The advantage of this G4FET-NDR LC oscillator over a conventional LC NDR oscillator is that one can apply a time-varying signal to one of the extra control input terminals (VN or VP) to modulate the conductance of the NDR device and thereby amplitude-modulate the output signal.
A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz
Digital voltage controlled oscillator for phase lock loops using coherent frequency synthesizer
Voltage Controlled Oscillator /VCO/, represented by an equivalent RF circuit, is easily adjusted for optimum performance by varying the circuit parameter. It contains a crystal drive level which is also easily adjusted to obtain minimum phase noise.
Phase locked phase modulation system with voltage controlled oscillator for final phase linearity
An analysis is presented for the voltage versus frequency characteristics of a varactor modulated VHF voltage controlled oscillator in which the frequency deviation is linearized by using the nonlinear characteristics of a field effect transistor as a signal amplifier. The equations developed are used to calculate the oscillator output frequency in terms of pertinent circuit parameters. It is shown that the nonlinearity exponent of the FET has a pronounced influence on frequency deviation linearity, whereas the junction exponent of the varactor controls total frequency deviation for a given input signal. A design example for a 250 MHz frequency modulated oscillator is presented.
Solid state voltage controlled oscillator using two silicon integrated circuit chips and thin film resistor chip
Integrated Component Systems, Inc. incorporated information from a NASA Tech Briefs article into a voltage-controlled oscillator it designed for a customer. The company then applied the technology to its series of phase-locked loop synthesizers, which offer superior phase noise performance.
In 1985, Power Efficiency Corporation of Las Vegas licensed NASA voltage controller technology from Marshall Space Flight Center. In the following years, Power Efficiency made patented improvements to the technology and marketed the resulting products throughout the world as the Performance Controller and the Power Efficiency energy-saving soft start. Soft start gradually introduces power to an electric motor, thus eliminating the harsh, violent mechanical stresses of having the device go from a dormant state to one of full activity; prevents it from running too hot; and increases the motor's lifetime. The product can pay for itself through the reduction in electricity consumed (according to Power Efficiency, within 3 years), depending on the duty cycle of the motor and the prevailing power rates. In many instances, the purchaser is eligible for special utility rebates for the environmental protection it provides. Common applications of Power Efficiency's soft start include mixers, grinders, granulators, conveyors, crushers, stamping presses, injection molders, elevators with MG sets, and escalators. The device has been retrofitted onto equipment at major department store chains, hotels, airports, universities, and for various manufacturers