Ex situ bismuth doping for efficient CdSeTe thin-film solar cells with open-circuit voltages exceeding 900 mV
We dope CdTe solar cells with Bi after the device structure is completed using a solution process.
CdTe solar cell↗
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Results for “voltage exceedance”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Elevated temperature for life extension of lithium ion power cells
Lithium ion (Li-ion) cells are increasingly being used in high power applications such as Hybrid Electric Vehicles. This paper investigates how the life of lithium ion power cells can be increased by increasing their temperature. End of life (EOL) in power applications is often defined as when the battery is no longer able to provide the required charge/discharge power because the battery voltage exceeds the maximum/minimum allowable voltages associated with the battery's chemistry. Here, this paper shows that battery life can be increased by step-wise temperature increases whenever the battery voltage exceeds a voltage limit when the EOL is reached. Experiments are conducted on commercially available lithium iron phosphate batteries for six months using a charge sustaining HEV cycle. Two, 1 °C temperature increases extend the life of the cells by 2000 cycles (3 months of continuous cycling).
25 ENERGY STORAGE↗
Over-voltage protection system and method
An over-voltage protection system includes an electronic valve connected across two terminals of a circuit and an over-voltage detection circuit connected across one of the plurality of semiconductor devices for detecting an over-voltage across the circuit. The electronic valve includes a plurality of semiconductor devices connected in series. The over-voltage detection circuit includes a voltage divider circuit connected to a break-over diode in a way to provide a representative low voltage to the break-over diode and an optocoupler configured to receive a current from the break-over diode when the representative low voltage exceeds a threshold voltage of the break-over diode indicating an over-voltage condition. The representative low voltage provided to the break-over diode represents a voltage across the one semiconductor device. A plurality of self-powered gate drive circuits are connected to the plurality of semiconductor devices, wherein the plurality of self-powered gate drive circuits receive over-voltage triggering pulses from the optocoupler during the over-voltage condition and switch on the plurality of semiconductor devices to bypass the circuit.
42 ENGINEERING↗
High-Voltage Photogeneration Exclusively via Aggregation-Induced Triplet States in a Heavy-Atom-Free Nonplanar Organic Semiconductor
The electron–hole recombination kinetics of organic photovoltaics (OPVs) are known to be sensitive to the relative energies of triplet and charge-transfer (CT) states. Yet, the role of exciton spin in systems having CT states above 1.7 eV—like those in near-ultraviolet-harvesting OPVs—has largely not been investigated. Here, aggregation-induced room-temperature intersystem crossing (ISC) to facilitate exciton harvesting in OPVs having CT states as high as 2.3 eV and open-circuit voltages exceeding 1.6 V is reported. Triplet excimers from energy-band splitting result in ultrafast CT and charge separation with nonradiative energy losses of <250 meV, suggesting that a 0.1 eV driving force is sufficient for charge separation, with entropic gain via CT state delocalization being the main driver for exciton dissociation and generation of free charges. This finding can inform engineering of next-generation active materials and films for near-ultraviolet OPVs with open-circuit voltages exceeding 2 V. Contrary to general belief, this work reveals that exclusive and efficient ISC need not require heavy-atom-containing active materials. Molecular aggregation through thin-film processing provides an alternative route to accessing 100% triplet states on photoexcitation.
25 ENERGY STORAGE↗
Simulation-Based Analysis of Feeder Operation with Different PV Smart Inverter Functions on an Actual Distribution System: Preprint
High penetration of photovoltaics (PV) in distribution feeders can cause problems, such as overvoltage, reverse power flow, and large net load changes. Traditional voltage regulation devices, such as capacitors and voltage regulators, can solve some of these problems but might have some delays. Today, smart inverters are gradually being used to provide voltage regulation and frequency support in distribution systems. Different smart inverter settings have been recommended in various rules and standards; however, the potential benefits and their impacts on distribution system operation are not well compared and studied. This paper presents a comparison of different smart inverter settings as applied to a distribution system. An actual feeder model from San Diego Gas & Electric Company is used to conduct the simulation. Additionally, a load disaggregation method is proposed to disaggregate the load and PV profile for each load location using advanced metering infrastructure net load measurements. Then, different smart inverter settings are applied to the PV systems in the feeder, and the simulation results are compared. The results show that the implementation of specific functions of smart inverters can reduce voltage exceedances, and the utility can determine the specific inverter setting based on its operational requirements.
distribution system↗
A data-driven sensor placement approach for detecting voltage violations in distribution systems
Stochastic fluctuations in power injections from distributed energy resources (DERs) combined with load variability can cause constraint violations (e.g., exceeded voltage limits) in electric distribution systems. To monitor grid operations, sensors are placed to measure important quantities such as the voltage magnitudes. Here, in this paper, we consider a sensor placement problem which seeks to identify locations for installing sensors that can capture all possible violations of voltage magnitude limits. We formulate a bilevel optimization problem that minimizes the number of sensors and avoids false sensor alarms in the upper level while ensuring detection of any voltage violations in the lower level. This problem is challenging due to the nonlinearity of the power flow equations and the presence of binary variables. Accordingly, we employ recently developed conservative linear approximations of the power flow equations that overestimate or underestimate the voltage magnitudes. By replacing the nonlinear power flow equations with conservative linear approximations, we can ensure that the resulting sensor locations and thresholds are sufficient to identify any constraint violations. Additionally, we apply various problem reformulations to significantly improve computational tractability while simultaneously ensuring an appropriate placement of sensors. Lastly, we improve the quality of the results via an approximate gradient descent method that adjusts the sensor thresholds. We demonstrate the effectiveness of our proposed method for several test cases, including a system with multiple switching configurations.
24 POWER TRANSMISSION AND DISTRIBUTION↗
NREL Collaboration Breaks 1-Volt Barrier in CdTe Solar Technology
NREL scientists have worked with Washington State University and the University of Tennessee to improve the maximum voltage available from CdTe solar cells. Changes in dopants, stoichiometry, interface design, and defect chemistry improved the CdTe conductivity and carrier lifetime by orders of magnitude, thus enabling CdTe solar cells with open-circuit voltages exceeding 1 volt for the first time. Values of current density and fill factor for CdTe solar cells are already at high levels, but sub-par voltages has been a barrier to improved efficiencies. With voltages pushed beyond 1 volt, CdTe cells have a path to produce electricity at costs less than fossil fuels.
14 SOLAR ENERGY↗
Model Quality and Measurement Density Impact on Volt/Volt Ampere Reactive Optimization Performance
The operation of the utility grid is being reshaped by the continuous addition of distributed energy resources and advanced metering infrastructure, which challenge existing grid control strategies. Some utilities deploy advanced distribution management systems (ADMS) to assist with the consolidation of various applications and to augment situational awareness in response to the new power delivery dynamics. An ADMS is an integrated software platform that provides utilities with a way to enhance their reliability, control, and optimization with advanced applications, such as volt/VAR optimization (VVO). A VVO application could serve as a vehicle to deliver cost savings by providing the utility with a method to reduce rates by controlling the voltage and decreasing the energy usage in their service territory. Some utilities are reluctant to integrate an ADMS, because it is a significant investment that requires approval from the public regulatory commission and/or their customers. This paper evaluates the impact on VVO performance when using a lower-quality network model supplemented with additional measurements, which could provide an implementation for cost savings. The results show that a better model quality would provide the highest energy savings; however, some level of telemetry is necessary in all scenarios to prevent voltage exceedances.
24 POWER TRANSMISSION AND DISTRIBUTION↗
Mild pH-decoupling aqueous flow battery with practical pH recovery
Establishing a pH difference between the two electrolytes (pH decoupling) of an aqueous redox flow battery (ARFB) enables cell voltages exceeding the 1.23 V thermodynamic water-splitting window, but acid–base crossover penalizes efficiency and lifetime. Here we employ mildly acidic and mildly alkaline electrolytes to mitigate crossover, achieving high round-trip energy efficiency with open circuit voltage >1.7 V. We implemented an acid–base regeneration system to periodically restore electrolytes to their initial pH values. The combined system exhibited capacity fade rate <0.07% per day, round-trip energy efficiency >85% and approximately 99% Coulombic efficiency during stable operation for over a week. Cost analysis shows that the tolerance of acid–base crossover could be increased if the pH-decoupling ARFB achieved a higher voltage output and lower resistance. Finally, this work demonstrates principles for improving lifespan, rate capability and energy efficiency in high-voltage pH-decoupling ARFBs and pH recovery concepts applicable for pH-decoupling systems.
25 ENERGY STORAGE↗
Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV
The combination of group-V element doping and Cd-rich composition is the most promising current strategy for maximizing p-type doping while preserving long lifetime. In this study, we carefully measure the equilibrium p-type doping limit for As-doped Cd-rich CdTe single crystals and demonstrate a doping limit in the low 10 17 cm –3 range upon slow cooling. Here, we present evidence for self-compensation with rapidly decreasing doping efficiency per added As above 5 × 10 16 cm –3 , yet we also demonstrate CdTe with >10 17 cm –3 hole concentration and bulk lifetime >30 ns. Such crystals allow As-doped CdTe photovoltaic devices with open-circuit voltage exceeding 900 mV.
14 SOLAR ENERGY↗
Enabling Stable High‐Voltage LiCoO 2 Operation by Using Synergetic Interfacial Modification Strategy
Abstract Structural and interfacial instability of the LiCoO 2 cathode under a voltage exceeding 4.5 V (vs Li/Li + ) severely hinders its practical applications for high‐energy‐density lithium batteries. Herein, a modified electrolyte with nitriles (suberonitrile or 1,3,6‐hexanetricarbonitrile) and fluoroethylene carbonate (FEC) coadditives is demonstrated to form an ultrathin and uniform interface layer on LiCoO 2 cathode under a synergetic effect. As such, LiCoO 2 /Li cells display excellent cyclability at a cutoff voltage of 4.6 V with a capacity retention over 72% after 300 cycles and 60% after 200 cycles at 30 and 55 °C, respectively, even achieving operation at a high current rate (10 C) upon 500 cycles as compared to the controls with fast‐falling capacity to zero. Furthermore, an adsorption‐coordination mechanism between nitriles and cobalt and synergetic effect of coadditives are explored by the alliance of spectroscopic analysis and theoretical calculations. The contributed lone‐pairs on the N 2p orbital of nitriles in coordination lowers the real oxidation state of Co 3+/4+ so that it decreases its catalysis on electrolytes, and the synergy from nitrile‐derived species regulates FEC to form an LiF‐containing electron‐insulated interface layer. This work shares a new insight to nitriles with the synergy of coadditives and paves a way to refine (ultra)high‐voltage LiCoO 2 cathode for high‐energy‐density energy storages.
Yang, Xuerui↗
High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD
Abstract This letter reports the demonstration of Aluminum nitride (AIN) Schottky barrier diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OFF ratios of 10 6 –10 8 and excellent thermal stability from 298 to 623 K. The device Schottky barrier height increased from 0.89 to 1.85 eV, and the ideality factor decreased from 4.29 to 1.95 with increasing temperature, ascribed to the inhomogeneous metal/AlN interface. This work demonstrates the potential of AlN as an ultra-wide bandgap semiconductor for developing multi-kV AlN high-voltage and high-power devices.
Physics↗
20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Scientific/Technical Report)
This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 µm or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.
20KV↗
20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Report)
This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower-voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 um or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV-class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.
24 POWER TRANSMISSION AND DISTRIBUTION↗
Synergistic Coupling Effect of Electronic Conductivity and Interphase Compatibility on High-Voltage Na 3 V 2 (PO 4 ) 2 F 3 Cathodes
Na 3 V 2 (PO 4 ) 2 F 3 (NVPF) has been considered an up-and-coming cathode material candidate for sodium (Na) ion batteries in light of its high specific capacity and working voltage. However, an erratic cathode/electrolyte interface layer is inevitably formed, accompanied by continuous electrolyte decomposition on the NVPF surface, when the voltage exceeds 4.2 V vs Na + /Na. Herein, the interphase features of NVPF are obviously enhanced owing to the ameliorated electronic conductivity obtained by combining it with carbon nanotubes (CNT). The NVPF with 3 wt % CNT (NVPF@3% CNT) reduces the Na + diffusion kinetic energy barrier and electron transport resistance. Furthermore, the conducting network formed by CNT with sturdy structure strength can promptly accommodate the volumetric changes during sequential Na + extraction/insertion and thus effectively improve the long-term cyclic performance of NVPF/hard carbon full cells. The initial discharge capacity approaches 105 mA h g –1 at 0.5C, and it retains 94% capacity retention after 200 cycles at the temperature of –10 °C. The cathode/electrolyte interphase characterization results further demonstrate that the interphase layer on the NVPF@3% CNT cathode is thinner and more compact compared with pristine samples. Here, this research provides a competitive strategy to facilitate the interfacial compatibility between the NVPF and electrolytes and accelerate the commercialization of high-performance Na-ion batteries.
25 ENERGY STORAGE↗
Interface Characterization of Single-Crystal CdTe Solar Cells With VOC > 950 mV
Advancing CdTe solar cell efficiency requires improving the open-circuit voltage (VOC) above 900 mV. This requires long carrier lifetime, high hole density, and high-quality interfaces, where the interface recombination velocity is less than about 104 cm/s. Using CdTe single crystals as a model system, we report on CdTe/CdS electrical and structural interface properties in devices that produce open-circuit voltage exceeding 950 mV.
14 SOLAR ENERGY↗
Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes
It is established experimentally that noticeable changes in the I–V characteristics and low-frequency noise in 4H-SiC pin diodes irradiated by electrons with an energy of 0.9 MeV are observed after doses of Φ ≥ 1.4 × 10{sup 15} cm{sup –2}. The currents in the forward and reverse branches of the I–V characteristics vary nonmonotonically at voltages lower than 2 V with increasing dose, which is explained by the interaction between the excited electronic subsystem and metastable defects. In this case, a steady increase in the ideality factor and the series resistance of diodes in the region of exponential growth of the I–V characteristics at voltages exceeding 2 V is observed. The reliable operation of microwave devices with low-noise 4H-SiC pin diodes under conditions of electron irradiation is possible up to a cumulative dose of Φ ≤ 10{sup 15} cm{sup –2}. In microwave devices, the level of low-frequency noise in which is irrelevant but the stabile regime of parameters is of importance, the dose can be increased to Φ ≈ 8 × 10{sup 15} cm{sup –2}.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Addressing Spacer Channel Resistances in MCDI Using Porous and Pliable Ionic Conductors
Membrane capacitive deionization (MCDI) is a unique electrochemical separations platform that allows for energy recovery during electrode regeneration. Similar to other electrochemical separation technologies producing deionized water (e.g. electrodialysis), ohmic resistances in the spacer channel significantly hampers the performance and energy efficiency of the process. This work devised a series of ionomer coated nylon mesh nets to address spacer channel resistances in MCDI. Under constant current operation, the ionomer coated nylon meshes displayed a 300 mV lower cell voltage rise during deionization while sustaining the same deionization rate. Furthermore, energy recovery was improved by 1.4x to 5.5x depending on the saline feed concentration. The lower cell voltage rise during deionization combined with the greater energy recovery with ionomer coated meshes resulted in energy normalized adsorbed salt (ENAS) values that were 2x to 3x greater. Addressing the spacer channel resistances in MCDI allowed for 8% to 19% increase in current density without the cell voltage exceeding 1.6 V—the upper bound set for mitigating parasitic reactions. Operating at higher current density leads to smaller MCDI units for a given deionization requirement and has implications for reducing the capital costs of the MCDI unit.
Palakkal, Varada Menon (ORCID:0000000317038323)↗