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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Voltage indicator fits into cigarette lighter socket and utilizes light emitting and Zener diodes to display three levels of battery voltage. Indicator is superior to typical conventional electrical system indicators in that it gives a positive discrete indication of battery voltage. It is simple, inexpensive, and rugged.
Cryogenic experiments left unattended for days. System automatically replenishes liquid helium in cryogenic experimental apparatus as liquid evaporates. Automatic filling system transfers liquid helium from storage vessel to experimental apparatus under computer control. Gaseous helium from cylinder supplies pumping pressure. Circuit senses level of liquid helium by sensing voltage across measuring resistors in series with silicon resistance thermometers (SRT's). Low voltage indicates SRT covered, while high voltage indicates uncovered.
The phase and/or period stability of a device is determined by connecting the device in one orthogonal arm of a phase detector having a mixer. In the other arm is an adjustable, variable phase shift device. The output of the mixer is fed through an active low pass filter to derive a DC voltage indicative of the phase shift. The variable phase device is adjusted so that the DC voltage will nullify the phase shift of the tested device under normal conditions. The DC voltage level is converted into a time interval indicative of the phase change of the tested device by determining when the level equals the amplitude of a low frequency ramp voltage. The interval between adjacent equality points can be measured or the period between a reference point on the ramp voltage and the quality be measured.
The protocol for charging a lithium-ion battery would be modified, according to a proposal, to compensate for the internal voltage drop (charging current internal resistance of the battery). The essence of the modification is to provide for measurement of the internal voltage drop and to increase the terminal-voltage setting by the amount of the internal voltage drop. Ordinarily, a lithium-ion battery is charged at constant current until its terminal voltage attains a set value equal to the nominal full-charge potential. The set value is chosen carefully so as not to exceed the lithium-plating potential, because plated lithium in metallic form constitutes a hazard. When the battery is charged at low temperature, the internal voltage drop is considerable because the electrical conductivity of the battery electrolyte is low at low temperature. Charging the battery at high current at any temperature also gives rise to a high internal voltage drop. In some cases, the internal voltage drop can be as high as 1 volt per cell. Because the voltage available for charging is less than the terminal voltage by the amount of the internal voltage drop, the battery is not fully charged (see figure), even when the terminal voltage reaches the set value. In the modified protocol, the charging current would be periodically interrupted so that the zero-current battery-terminal voltage indicative of the state of charge could be measured. The terminal voltage would also be measured at full charging current. The difference between the full-current and zero-current voltages would equal the internal voltage drop. The set value of terminal voltage would then be increased beyond the nominal full-charge potential by the amount of the internal voltage drop. This adjustment would be performed repeatedly, in real time, so that the voltage setting would track variations in the internal voltage drop to afford full charge without risk of lithium plating. If the charging current and voltage settings were controlled by a computer, then this method of charge control could readily be implemented in software.
The characteristics of electrical discharges induced on silverbacked Teflon samples irradiated by a monoenergetic electron beam have been studied under controlled laboratory conditions. Measurements of breakdown threshold voltages indicate a marked anisotropy in the electrical breakdown properties of Teflon: differences of up to 10 kV in breakdown threshold voltage are observed depending on the sample orientation. The material anisotropy can be utilized in spacecraft construction to reduce the magnitude of discharge currents.
A feedback-controlled microphone includes a microphone body and a membrane operatively connected to the body. The membrane is configured to be initially deflected by acoustic pressure such that the initial deflection is characterized by a frequency response. The microphone also includes a sensor configured to detect the frequency response of the initial deflection and generate an output voltage indicative thereof. The microphone additionally includes a compensator in electric communication with the sensor and configured to establish a regulated voltage in response to the output voltage. Furthermore, the microphone includes an actuator in electric communication with the compensator, wherein the actuator is configured to secondarily deflect the membrane in opposition to the initial deflection such that the frequency response is adjusted. An acoustic beam forming microphone array including a plurality of the above feedback-controlled microphones is also disclosed.
An artifact signal attenuator for a pulse rate sensor is described. The circuit for attenuating background noise signals is connected with a pulse rate transducer which has a light source and a detector for light reflected from blood vessels of a living body. The heart signal provided consists of a modulated dc signal voltage indicative of pulse rate. The artifact signal resulting from light reflected from the skin of the body comprises both a constant dc signal voltage and a modulated dc signal voltage. The amplitude of the artifact signal is greater and the frequency less than that of the heart signal. The signal attenuator circuit includes an operational amplifier for canceling the artifact signal from the output signal of the transducer and has the capability of meeting packaging requirements for wrist-watch-size packages.
Rapid-response monitoring circuit detects voltage decrease or dropout in any single phase or all three phases simultaneously of a 3-phase 60 Hz computer power supply. It uses lamps to indicate voltage conditions and provides a digital pulse output for a chronological record of voltage irregularities.
New rechargeable battery technology is described and compared with classical primary battery back-up of SRAM PC cards. Thin solid polymer electrolyte cells with the thickness of TSOP memory components (1 mm nominal, 1.1 mm max) and capacities of 14 mAh/sq cm can replace coin cells. The SRAM PC cards with permanently installed rechargeable cells and optional electrochromic low battery voltage indicators will free the periodic PC card user from having to 'feed' their PC cards with coin cells and will allow a quick visual check of stored cards for their battery voltage status.
Infrared transmitter and receiver designed for wireless transmission of information on measured physical quantity (for example, temperature) from transducer device to remote-acquisition system. In transmitter, output of transducer amplified and shifted with respect to bias or reference level, then fed to voltage-to-frequency converter to control frequency of repetition of current pulses applied to infrared-light-emitting diode. In receiver, frequency of repetition of pulses converted back into voltage indicative of temperature or other measured quantity. Potential applications include logging data while drilling for oil, transmitting measurements from rotors in machines without using slip rings, remote monitoring of temperatures and pressures in hazardous locations, and remote continuous monitoring of temperatures and blood pressures in medical patients, who thus remain mobile.
Piezoelectric lead magnesium niobate-lead titanate (PMN-PT) single crystal is one of the most promising materials for electromechanical device applications due to its high electrical field induced strain and high electromechanical coupling factor. PMN-PT single crystal-based multilayer stack actuators and multilayer stack-based flextensional actuators have exhibited high stroke and high displacement-voltage ratios. The actuation capabilities of these two actuators were evaluated using a newly developed method based upon a laser vibrometer system under various loading conditions. The measured displacements as a function of mechanical loads at different driving voltages indicate that the displacement response of the actuators is approximately constant under broad ranges of mechanical load. The load capabilities of these PMN-PT single crystal-based actuators and the advantages of the capability for applications will be discussed.
Piezoelectric lead magnesium niobate-lead titanate (PMN-PT) single crystal is one of the most promising materials for electromechanical device applications due to its high electrical field induced strain and high electromechanical coupling factor. PMN-PT single crystal-based multilayer stack actuators and multilayer stack-based flextensional actuators have exhibited high stroke and high displacement-voltage ratios. The actuation capabilities of these two actuators were evaluated using a newly developed method based upon a laser vibrometer system under various loading conditions. The measured displacements as a function of mechanical loads at different driving voltages indicate that the displacement response of the actuators is approximately constant under broad ranges of mechanical load. The load capabilities of these PMN-PT single crystal-based actuators and the advantages of the capability for applications will be discussed.
A process, voltage, and temperature (PVT) compensation circuit and a method of continuously generating a delay measure are provided. The compensation circuit includes two delay lines, each delay line providing a delay output. The two delay lines may each include a number of delay elements, which in turn may include one or more current-starved inverters. The number of delay lines may differ between the two delay lines. The delay outputs are provided to a combining circuit that determines an offset pulse based on the two delay outputs and then averages the voltage of the offset pulse to determine a delay measure. The delay measure may be one or more currents or voltages indicating an amount of PVT compensation to apply to input or output signals of an application circuit, such as a memory-bus driver, dynamic random access memory (DRAM), a synchronous DRAM, a processor or other clocked circuit.
A system for providing an auditory display of two-dimensional patterns as an aid to the blind is described. It includes a scanning device for producing first and second voltages respectively indicative of the vertical and horizontal positions of the scan and a further voltage indicative of the intensity at each point of the scan and hence of the presence or absence of the pattern at that point. The voltage related to scan intensity controls transmission of the sounds to the subject so that the subject knows that a portion of the pattern is being encountered by the scan when a tone is heard, the subject determining the position of this portion of the pattern in space by the frequency and interaural difference information contained in the tone.
A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.
Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.
A method and apparatus are provided for detecting an arcing fault on a power line carrying a load current. Parameters indicative of power flow and possible fault events on the line, such as voltage and load current, are monitored and analyzed for an arc burst pattern exhibited by arcing faults in a power system. These arcing faults are detected by identifying bursts of each half-cycle of the fundamental current. Bursts occurring at or near a voltage peak indicate arcing on that phase. Once a faulted phase line is identified, a comparison of the current and voltage reveals whether the fault is located in a downstream direction of power flow toward customers, or upstream toward a generation station. If the fault is located downstream, the line is de-energized, and if located upstream, the line may remain energized to prevent unnecessary power outages.
The nominal input power of a 30-cm mercury bombardment ion thruster is 2.5 kW. A representative 30-cm thruster has been operated at higher power levels by increasing either the ion beam voltage or current. Initial results indicate that higher voltage (high specific impulse) operation requires only minor modifications in thruster design. Higher current (low specific impulse) operation, on the other hand, requires improvements in the capabilities of the discharge chamber and ion optics assembly designs to meet lifetime and/or performance specifications. Experimental data is presented and considerations for high power operation (up to 10 kW) are discussed.