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Low-loss millimeter-wave resonators with an improved coupling structure

Millimeter-wave superconducting resonators are a useful tool for studying quantum device coherence in a new frequency domain. However, improving resonators is difficult without a robust and reliable method for coupling millimeter-wave signals to 2D structures. We develop and characterize a tapered transition structure coupling a rectangular waveguide to a planar slotline waveguide with better than 0.5 dB efficiency over 14 GHz, and use it to measure ground-shielded resonators in the W band (75–110 GHz). Having decoupled the resonators from radiative losses, we consistently achieve single-photon quality factors above 10 5 , with a two-level-system loss limit above 10 6 , and verify the effectiveness of oxide removal treatments to reduce loss. These values are 4–5 times higher than those previously reported in the W band, and much closer to typical planar microwave resonators. The improved losses demonstrated by these on-chip millimeter-wave devices shed new light on quantum decoherence in a different frequency regime, offer increased selectivity for high-frequency detectors, and enables new possibilities for hybrid quantum experiments integrating millimeter-wave frequencies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A new model for broadband waveguide to microstrip transition design

A new model is presented which permits the prediction of the resonant frequencies created by antipodal finline waveguide to microstrip transitions. The transition is modeled as a tapered transmission line in series with an infinite set of coupled resonant circuits. The resonant circuits are modeled as simple microwave resonant cavities of which the resonant frequencies are easily determined. The model is developed and the resonant frequencies determined for several different transitions. Experimental results are given to confirm the models.

Ponchak, George E.↗

A new model for broadband waveguide-to-microstrip transition design

A new model is presented which permits the prediction of the resonant frequencies created by antipodal finline waveguide to microstrip transitions. The transition is modeled as a tapered transmission line in series with an infinite set of coupled resonant circuits. The resonant circuits are modeled as simple microwave resonant cavities of which the resonant frequencies are easily determined. The model is developed and the resonant frequencies determined for several different transitions. Experimental results are given to confirm the models.

Ponchak, George E.↗

Computing Resonances Of Waveguide-To-Microstrip Transitions

Simplified mathematical model used to predict resonant frequencies of antipodal-finline waveguide-to-microstrip transitions. Makes it possible to place undesired resonances outside desired frequency band during design process; eliminates much of iteration in design process and thereby reduces both time and cost of design.

Ponchak, George E.↗

Update on Waveguide-Embedded Differential MMIC Amplifiers

There is an update on the subject matter of Differential InP HEMT MMIC Amplifiers Embedded in Waveguides (NPO-42857) NASA Tech Briefs, Vol. 33, No. 9 (September 2009), page 35. To recapitulate: Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The MMICs are designed integrally with, and embedded in, waveguide packages. The instant work does not mention InP HEMTs but otherwise reiterates part of the subject matter of the cited prior article, with emphasis on the following salient points: An MMIC is mounted in the electric-field plane ("E-plane") of a waveguide and includes a finline transition to each differential-amplifier stage. The differential configuration creates a virtual ground within each pair of transistor-gate fingers, eliminating the need for external radio-frequency grounding. This work concludes by describing a single-stage differential submillimeter-wave amplifier packaged in a rectangular waveguide and summarizing results of tests of this amplifier at frequencies of 220 and 305 GHz.

Kangaslahti, Pekka↗

Monolithic microwave integrated circuits: Interconnections and packaging considerations

Monolithic microwave integrated circuits (MMIC's) above 18 GHz were developed because of important potential system benefits in cost reliability, reproducibility, and control of circuit parameters. The importance of interconnection and packaging techniques that do not compromise these MMIC virtues is emphasized. Currently available microwave transmission media are evaluated to determine their suitability for MMIC interconnections. An antipodal finline type of microstrip waveguide transition's performance is presented. Packaging requirements for MMIC's are discussed for thermal, mechanical, and electrical parameters for optimum desired performance.

Bhasin, K. B.↗

30/20 GHz spacecraft GaAs FET solid state transmitter for trunking and customer-premise-service application

Sixteen 30 dB 0.5 W amplifier modules were combined to satisfy the requirement for a graceful degradation. If one module fails, the output power drops by only 0.43 dB. Also, by incorporating all the gain stages within the combiner the overall combining efficiency is maximized. A 16 way waveguide divider combiner was developed to minimize the insertion loss associated with such a large corporate feed structure. Tests showed that the 16 way insertion loss was less than 0.5 dB. To minimize loss, a direct transition from waveguide to microstrip, using a finline on duroid substrate, was developed. The FETs fabricated on MBE grown material, demonstrated superior performances. For example, a 600 micrometer device was capable of 320 mW output power with 5 dB gain and 26.6% efficiency at 21 GHz. The 16 module amplifier gave 8.95 W saturated output power with 30 dB gain. The overall efficiency was 9%. The 3 dB bandwidth was 2.5 GHz. At 17.7 GHz the amplifier had 5 W output power and at 20.2 GHz it still had 4.4 W.

Saunier, P.↗

Packaging of microwave integrated circuits operating beyond 100 GHz

Several methods of packaging high speed (75-330 GHz) InP HEMT MMIC devices are discussed. Coplanar wirebonding is presented with measured insertion loss of less than 0.5dB and return loss better than -17 dB from DC to 110 GHz. A motherboard/daughterboard packaging scheme is presented which supports minimum loss chains of MMICs using this coplanar wirebonding method. Split waveguide block packaging approaches are presented in G-band (140-220 GHz) with two types of MMIC-waveguide transitions: E-plane probe andantipodal finline.

HEMT MMICS power amplifiers↗

Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have prohibitively low impedances. Yet another advantage afforded by the virtual ground of the differential configuration is elimination of the need for a ground plane and, hence, elimination of the need for back-side metallization of the MMIC chip. In turn, elimination of the back-side metallization simplifies fabrication, reduces parasitic capacitances, and enables mounting of the MMIC in the electric-field plane ("E-plane") of a waveguide. E-plane mounting is consistent with (and essential for the utility of) the finline configuration, in which transmission lines lie on a dielectric sheet in the middle of a broad side of the waveguide. E-plane mounting offers a combination of low loss and ease of assembly because no millimeter-wave wire bonds or transition substrates are required. Moreover, because there is no ground plane behind the MMIC, the impedance for the detrimental even (single-ended) mode is high, suppressing coupling to that mode. Still another advantage of E-plane mounting is that the fundamental waveguide mode is inherently differential, eliminating the need for a balun to excite the differential mode.

Kangaslahti, Pekka↗

MMIC devices for active phased array antennas

The study of printed circuit discontinuities is necessary in order to design, for example, transitions between rectangular waveguides and printed circuits. New developments with respect to the analytical approaches to this problem are discussed. A summary of the progress in the experimental approach is presented. The accurate solution for the modes in various millimeter-wave waveguides is essential in the analysis of many integrated circuit components, such as filters and impedance transformers. Problems associated with the numerical computation of these modes in two frequently used waveguide forms, namely, the finline and microstrip, are presented. The spectral domain method of formulation, with a moment method solution, is considered. This approach can be readily extended to analyze an arbitrary configuration of dielectric and metallized regions in a shielded enclosure. Galerkin's method is used, where the testing and basic functions are the same. It is shown that the mode functions, or eigenfunctions, are more sensitive to errors than the phase constants, or eigenvalues. The approximate mode functions do not satisfy the orthogonality relationship well, resulting in difficulties when these modal solutions are used to form an approximate Green's function or are used in a mode matching analysis.

Mittra, R.↗