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At least 19 records

Artesian Well Abandonment at Launch Complex 39A

The artesian well tasked for abandonment was located on the LOX side (northwest area) of the launch complex. The exact date of well installation is unknown. The well was no longer in use at the time of the abandonment request, but was previously utilized under St. Johns River Water Management District (SJRWMD) consumptive use permit (No. 50054) for the Floridian Aquifer. The exact construction details of the LOX artesian well were also unknown; however, a similar-type artesian well was previously located on the LH2 side of the site, which was abandoned in 2012. Based on discussions with the NASA RPM and review of the LH2 artesian well abandonment completion report, the LH2 artesian well was reported to be an 8-inch diameter, 330-foot deep well. The NASA RPM communicated that the LOX artesian well was likely to be an 8-inch diameter, 380-foot deep well. This information was used for scoping, and was subsequently confirmed to be substantially accurate. No additional information could be found for the LOX artesian well using the NASA Remediation Information System (RIS).

Morgan, Lindsay

Effect of Vertical Rate Error on Recovery from Loss of Well Clear Between UAS and Non-Cooperative Intruders

When an Unmanned Aircraft System (UAS) encounters an intruder and is unable to maintain required temporal and spatial separation between the two vehicles, it is referred to as a loss of well-clear. In this state, the UAS must make its best attempt to regain separation while maximizing the minimum separation between itself and the intruder. When encountering a non-cooperative intruder (an aircraft operating under visual flight rules without ADS-B or an active transponder) the UAS must rely on the radar system to provide the intruders location, velocity, and heading information. As many UAS have limited climb and descent performance, vertical position andor vertical rate errors make it difficult to determine whether an intruder will pass above or below them. To account for that, there is a proposal by RTCA Special Committee 228 to prohibit guidance systems from providing vertical guidance to regain well-clear to UAS in an encounter with a non-cooperative intruder unless their radar system has vertical position error below 175 feet (95) and vertical velocity errors below 200 fpm (95). Two sets of fast-time parametric studies was conducted, each with 54000 pairwise encounters between a UAS and non-cooperative intruder to determine the suitability of offering vertical guidance to regain well clear to a UAS in the presence of radar sensor noise. The UAS was not allowed to maneuver until it received well-clear recovery guidance. The maximum severity of the loss of well-clear was logged and used as the primary indicator of the separation achieved by the UAS. One set of 54000 encounters allowed the UAS to maneuver either vertically or horizontally, while the second permitted horizontal maneuvers, only. Comparing the two data sets allowed researchers to see the effect of allowing vertical guidance to a UAS for a particular encounter and vertical rate error. Study results show there is a small reduction in the average severity of a loss of well-clear when vertical maneuvers are suppressed, for all vertical error rate thresholds examined. However, results also show that in roughly 35 of the encounters where a vertical maneuver was selected, forcing the UAS to do a horizontal maneuver instead increased the severity of the loss of well-clear for that encounter. Finally, results showed a small reduction in the number of severe losses of well-clear when the high performance UAS (2000 fpm climb and descent rate) was allowed to maneuver vertically, and the vertical rate error was below 500 fpm. Overall, the results show that using a single vertical rate threshold is not advisable, and that limiting a UAS to horizontal maneuvers when vertical rate errors are above 175 fpm can make a UAS less safe about a third of the time. It is suggested that the hard limit be removed, and system manufacturers instructed to account for their own UAS performance, as well as vertical rate error and encounter geometry, when determining whether or not to provide vertical guidance to regain well-clear.

detect and avoid

Modeling of THz Lasers Based on Intersubband Transitions in Semiconductor Quantum Wells

In semiconductor quantum well structures, the intersubband energy separation can be adjusted to the terahertz (THz) frequency range by changing the well width and material combinations. The electronic and optical properties of these nanostructures can also be controlled by an applied dc electric field. These unique features lead to a large frequency tunability of the quantum well devices. In the on-going project of modeling of the THz lasers, we investigate the possibility of using optical pumping to generate THz radiation based on intersubband transitions in semiconductor quantum wells. We choose the optical pumping because in the electric current injection it is difficult to realize population inversion in the THz frequency range due to the small intersubband separation (4-40 meV). We considered both small conduction band offset (GaAs/AlGaAs) and large band offset (InGaAs/AlAsSb) quantum well structures. For GaAs/AlGaAs quantum wells, mid-infrared C02 lasers are used as pumping sources. For InGaAs/AlAsSb quantum wells, the resonant intersubband transitions can be excited by the near-infrared diode lasers. For three- and four-subband quantum wells, we solve the pumpfield-induced nonequilibrium distribution function for each subband of the quantum well system from a set of rate equations that include both intrasubband and intersubband relaxation processes. Taking into account the coherent interactions between pump and THz (signal) waves, we calculate the optical gain for the THz field. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. A graph shows the calculated THz gain spectra for three-subband GaAs/AlGaAs quantum wells. We see that the coherent pump and signal wave interactions contribute significantly to the gain. The pump intensity dependence of the THz gain is also studied. The calculated results are shown. Because of the optical Stark effect and pump-induced population redistribution, the maximum THz gain saturates at larger pump intensities.

Liu, Ansheng

Microscope Cells Containing Multiple Micromachined Wells

Tech Briefs, May 2003 19 Manufacturing Microscope Cells Containing Multiple Micromachined Wells The cost per cell has been reduced substantially. John H. Glenn Research Center, Cleveland, Ohio An improved design for multiple-well microscope cells and an associated improved method of fabricating them have been devised. [As used here, "well" denotes a cavity that has a volume of about 1 or 2 L and that is used to hold a sample for examination under a microscope. As used here, "cell" denotes a laminate, based on a standard 1- by 3-in. (2.54- by 7.62-cm) microscope slide, that comprises (1) the slide as the lower layer, (2) an intermediate layer that contains holes that serve as the wells, and (3) a top layer that either consists of, or is similar to, a standard microscope-slide cover slip.] The improved design and method of fabrication make it possible to increase (relative to a prior design and method of fabrication) the number of wells per cell while reducing the fabrication loss and reducing the cost per cell to about one-tenth of the prior value. In the prior design and method, the slide, well, and cover-slip layers were made from silicate glass. The fabrication of each cell was a labor-intensive process that included precise cutting and grinding of the glass components, fusing of the glass components, and then more grinding and polishing to obtain desired dimensions. Cells of the prior design were expensive and fragile, the rate of loss in fabrication was high, and the nature of the glass made it difficult to increase the number of cells per well. Efforts to execute alternative prior designs in plastic have not yielded satisfactory results because, for typical applications, plastics are not sufficiently thermally or chemically stable, not sufficiently optically clear, and/or not hard enough to resist scratching. The figure depicts a cell of the present improved type. The slide and cover-slip layers are made of a low-thermal-expansion glass (Pyrex(TradeMark) or equivalent) and the intermediate (well layer) is made of SiO2 - a combination of materials that results in a laminate stronger than one made from layers of silicate glass. Before the layers are assembled into the laminate, the SiO2 layer is micromachined to form the wells plus shallow grooves that, when subsequently covered with the cover slip, become capillary channels that are used to fill the wells with samples. The micromachining is accomplished by use of the same patterning and etching techniques used to fabricate microelectromechanical systems (MEMS).

Turner, Walter

Construction of Low Dissipative High Order Well-Balanced Filter Schemes for Non-Equilibrium Flows

The goal of this paper is to generalize the well-balanced approach for non-equilibrium flow studied by Wang et al. [26] to a class of low dissipative high order shock-capturing filter schemes and to explore more advantages of well-balanced schemes in reacting flows. The class of filter schemes developed by Yee et al. [30], Sjoegreen & Yee [24] and Yee & Sjoegreen [35] consist of two steps, a full time step of spatially high order non-dissipative base scheme and an adaptive nonlinear filter containing shock-capturing dissipation. A good property of the filter scheme is that the base scheme and the filter are stand alone modules in designing. Therefore, the idea of designing a well-balanced filter scheme is straightforward, i.e., choosing a well-balanced base scheme with a well-balanced filter (both with high order). A typical class of these schemes shown in this paper is the high order central difference schemes/predictor-corrector (PC) schemes with a high order well-balanced WENO filter. The new filter scheme with the well-balanced property will gather the features of both filter methods and well-balanced properties: it can preserve certain steady state solutions exactly; it is able to capture small perturbations, e.g., turbulence fluctuations; it adaptively controls numerical dissipation. Thus it shows high accuracy, efficiency and stability in shock/turbulence interactions. Numerical examples containing 1D and 2D smooth problems, 1D stationary contact discontinuity problem and 1D turbulence/shock interactions are included to verify the improved accuracy, in addition to the well-balanced behavior.

Wang, Wei

Characterizing the Effects of a Vertical Time Threshold for a Class of Well-Clear Definitions

A fundamental requirement for the integration of unmanned aircraft into civil airspace is the capability of aircraft to remain well clear of each other and avoid collisions. This requirement has led to a broad recognition of the need for an unambiguous, formal definition of well clear. It is further recognized that any such definition must be interoperable with existing airborne collision avoidance systems (ACAS). A particular class of well-clear definitions uses logic checks of independent distance thresholds as well as independent time thresholds in the vertical and horizontal dimensions to determine if a well-clear violation is predicted to occur within a given time interval. Existing ACAS systems also use independent distance thresholds, however a common time threshold is used for the vertical and horizontal logic checks. The main contribution of this paper is the characterization of the effects of the decoupled vertical time threshold on a well-clear definition in terms of (1) time to well-clear violation, and (2) interoperability with existing ACAS. The paper provides governing equations for both metrics and includes simulation results to illustrate the relationships. In this paper, interoperability implies that the time of well-clear violation is strictly less than the time a resolution advisory is issued by ACAS. The encounter geometries under consideration in this paper are initially well clear and consist of constant-velocity trajectories resulting in near-mid-air collisions.

Upchurch, Jason M.

Characteristics of a Well Clear Definition and Alerting Criteria for Encounters Between UAS and Manned Aircraft in Class E Airspace

Unmanned aircraft systems (UAS) will be required to equip with a detect-and-avoid (DAA) system in order to satisfy the federal aviation regulations to remain well clear of other aircraft. For a DAA system to satisfy the requirement to stay well clear of other airborne traffic, a quantitative definition of well clear needs to be defined and evaluated. This study investigates the implications of UAS using proposed well clear definitions as a separation standard for conducting operations in the National Airspace System (NAS). The first analysis considers three well clear definitions and presents the relative state conditions of intruder aircraft as they encroach upon the well clear boundary. The second analysis focuses on the definition of the alerting criteria needed to inform the UAS operator of a potential loss of well clear. All analyses are conducted in a NAS-wide fast-time simulation environment using UAS aircraft models, proposed UAS missions, and historical air defense radar data to populate the background traffic operating under visual flight rules. The results presented in this study inform the safety case, requirements development, and the operational environment for DAA minimum operational performance standards.

Safety

Pumping potential wells

Nonmonotonic plasma potential structures are a common feature of many double layers and sheaths. Steady state plasma potential wells separating regions having different plasma potentials are often found in laboratory experiments. In order to exist, all such structures must find a solution to a common problem. Ions created by charge exchange or ionization in the region of the potential well are electrostatically confined and tend to accumulate and fill up the potential well. The increase in positive charge should eliminate the well. Nevertheless, steady state structures are found in which the wells do not fill up. This means that it is important to take into account processes which pump ions from the well. As examples of ion pumping of plasma wells, potential dips in front of a positively biased electron collecting anode in a relatively cold, low density, multidipole plasma are considered. Pumping is provided by ion leaks from the edges of the potential dip or by oscillating the applied potential. In the former case the two-dimensional character of the problem is shown to be important.

Hershkowitz, N.

Pumping potential wells

Nonmonotonic plasma potential structures are a common feature of many double layers and sheaths. Steady state plasma potential wells separating regions having different plasma potentials are often found in laboratory experiments. In order to exist, such structures all must find a solution to a common problem. Ions created by charge exchange or ionization in the region of the potential well are electrostatically confined and tend to accumulate and fill up the potential well. The increase in positive charge should eliminate the well. Nevertheless, steady state structures are found in which the wells do not fill up. This means that it is important to take into account processes which 'pump' ions from the well. As examples of ion pumping of plasma wells, potential dips in front of a positively biased electro collecting anode in a relatively cold, low density multidipole plasma is considered. Pumping is provided by ion leaks from the edges of the potential dip or by oscillating the applied potential. In the former case the two dimensional character of the problem is shown to be important.

Hershkowitz, N.

Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes

The purpose of this study is to use both theoretical and experimental evidence to determine the impact of doping imbalance and symmetry on the physical and electrical characteristics of doped multiple quantum well avalanche photodiodes (APD). Theoretical models have been developed to calculate the electric field valence and conduction bands, capacitance-voltage (CV), and carrier concentration versus depletion depth profiles. The models showed a strong correlation between the p- and n-doping balance inside the GaAs wells and the number of depleted stages and breakdown voltage of the APD. A periodic doping imbalance in the wells has been shown to result in a gradual increase (or decrease) in the electric field profile throughout the device which gave rise to partially depleted devices at low bias. The MQW APD structures that we modeled consisted of a 1 micron top p(+)-doped (3 x 10(exp 18) cm(exp -3)) GaAs layer followed by a 1 micron region of alternating layers of GaAs (500 A) and Al(0.42)Ga(0.58)As (500 A), and a 1 micron n(+) back layer (3 x 10(exp 18) cm(exp -3)). The GaAs wells were doped with p-i-n layers placed at the center of each well. The simulation results showed that in an APD with nine doped wells, and where the 50 A p-doped layer is off by 10% (p = 1.65 x 10(exp 18) cm(exp -3), n = 1.5 x 10(exp 18) cm(exp -3)), almost half of the MQW stages were shown to be undepleted at low bias which was a result of a reduction in the electric field near the p(+) cap layer by over 50% from its value in the balanced structure. Experimental CV and IV data on similar MBE grown MQW structures have shown very similar depletion and breakdown characteristics. The models have enabled us to better interpret our experimental data and to determine both the extent of the doping imbalances in the devices as well as the overall p- or n-type doping characteristics of the structures.

Menkara, H. M.

Dot-in-Well Quantum-Dot Infrared Photodetectors

Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material system is expected to enable achievement of greater densities of QDs and correspondingly greater quantum efficiencies. The host GaAs/AlGaAs MQW structures are highly compatible with mature fabrication processes that are now used routinely in making QWIP FPAs. The hybrid InGaAs-dot/GaAs/AlGaAs-well system also offers design advantages in that the effects of variability of dot size can be partly compensated by engineering quantum-well sizes, which can be controlled precisely.

Gunapala, Sarath

Vectorization of a penalty function algorithm for well scheduling

In petroleum engineering, the oil production profiles of a reservoir can be simulated by using a finite gridded model. This profile is affected by the number and choice of wells which in turn is a result of various production limits and constraints including, for example, the economic minimum well spacing, the number of drilling rigs available and the time required to drill and complete a well. After a well is available it may be shut in because of excessive water or gas productions. In order to optimize the field performance a penalty function algorithm was developed for scheduling wells. For an example with some 343 wells and 15 different constraints, the scheduling routine vectorized for the CYBER 205 averaged 560 times faster performance than the scalar version.

Absar, I.

Characteristics of AlGaAs/GaAs multiple quantum well infrared detectors

Researchers fabricated and characterized several AlGaAs/GaAs multiple quantum well infrared detectors to evaluate the ultimate performance of these devices for low infrared background applications. The detectors were designed to have a single bound state in the quantum well and the first excited state in the continuum above the AlGaAs conduction band edge. The difference in energy between the two levels, as determined by the quantum well width and aluminum mole fraction in the barrier, was chosen such that peak absorption would occur near 8 microns. The initial structures studied comprised 50 periods with 40 A well widths and 300 A Al(0.28)Ga(0.72)As barriers. The performance of these detectors are summarized. To better interpret these results and design optimized detectors, researchers modeled both the detector noise and tunneling currents. The noise model correctly predicts that multiple quantum well detectors will, indeed, exhibit noise lower than full shot noise. The tunneling current model predicts the dark current versus bias for any choice of design parameters in a multiple quantum well detector. This model predicts a substantially reduced dark current (x 10(exp 04)) for samples with 400 A barriers. To evaluate structures with thicker barriers, researchers fabricated and characterized detectors with 400 A and 500 A barriers; a comparison of detector dark currents is shown. These results are consistent with the predictions of the dark current model.

Janousek, Bruce K.

Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors

We present a detailed and thorough study of a wide variety of quantum well infrared photodetectors (QWIPs), which were chosen to have large differences in their optical and transport properties. Both n- and p-doped QWIPs, as well as intersubband transitions based on photoexcitation from bound-to-bound, bound-to-quasi-continuum, and bound-to-continuum quantum well states were investigated. The measurements and theoretical analysis included optical absorption, responsivity, dark current, current noise, optical gain, hot carrier mean free path; net quantum efficiency, quantum well escape probability, quantum well escape time, as well as detectivity. These results allow a better understanding of the optical and transport physics and thus a better optimization of the QWIP performance.

Levine, B. F.

UAS Well Clear Recovery Against Non-Cooperative Intruders Using Vertical Maneuvers

This paper documents a study that drove the development of a mathematical expression in the detect-and-avoid (DAA) minimum operational performance standards (MOPS) for unmanned aircraft systems (UAS). This equation describes the conditions under which vertical maneuver guidance should be provided during recovery of DAA well clear separation with a non-cooperative VFR aircraft. Although the original hypothesis was that vertical maneuvers for DAA well clear recovery should only be offered when sensor vertical rate errors are small, this paper suggests that UAS climb and descent performance should be considered-in addition to sensor errors for vertical position and vertical rate-when determining whether to offer vertical guidance. A fast-time simulation study involving 108,000 encounters between a UAS and a non-cooperative visual-flight-rules aircraft was conducted. Results are presented showing that, when vertical maneuver guidance for DAA well clear recovery was suppressed, the minimum vertical separation increased by roughly 50 feet (or horizontal separation by 500 to 800 feet). However, the percentage of encounters that had a risk of collision when performing vertical well clear recovery maneuvers was reduced as UAS vertical rate performance increased and sensor vertical rate errors decreased. A class of encounter is identified for which vertical-rate error had a large effect on the efficacy of horizontal maneuvers due to the difficulty of making the correct left/right turn decision: crossing conflict with intruder changing altitude. Overall, these results support logic that would allow vertical maneuvers when UAS vertical performance is sufficient to avoid the intruder, based on the intruder's estimated vertical position and vertical rate, as well as the vertical rate error of the UAS' sensor.

UAS in the NAS

Pilot Evaluation of a UAS Detect-and-Avoid System's Effectiveness in Remaining Well Clear

Unmanned aircraft will equip with a detect-and-avoid (DAA) system that allows them to comply with the requirement to see and avoid other aircraft, an important layer in the overall set of procedural, strategic and tactical separation methods designed to prevent mid-air collisions. Although the effectiveness of the DAA system will be set to a minimum threshold by regulators, different combinations of algorithms, displays and procedures could be used to meet that minimum. The research presented in this paper indicates the effectiveness of the combined pilot-DAA system as a function of the DAA design requirements and provides data that may be used to model the behavior of pilots when employing such systems. Over the course of two simulations 21 professional UAS pilots evaluated eight different DAA system designs and metrics were collected on their ability to maintain the well clear separation standard. The independent variables were the time horizon at which pilots were alerted to potential losses of well clear, the location of the traffic display, and the tools and informational elements available on the display to aid the pilot in detecting and resolving those potential losses. In the second experiment the UAS encountered two categories of aircraft: those equipped with simulated transponders that could be seen dozens of miles away and those without that were only detectable by a simulated radar within a range of six nautical miles. The data indicate that integrating the traffic display with the primary mission map directly in front of the pilot reduced the frequency of losses of well clear. Improved detection and resolution tools, including explicit maneuver guidance and a trial planning capability, had less of an effect in reducing the frequency of losses but significantly reduced the time in loss when they occurred. The amount of warning time provided to the pilot had a strong effect on their ability to remain well clear: when alerts were first presented with less than about 15 seconds to a predicted loss of well clear pilots were able to maneuver successfully in only 26 percent of encounters, whereas they were about 83 percent successful when they had more than 15 seconds. Pilots' ability to separate from the two categories of aircraft was nearly the same after accounting for the amount of alert time provided in each encounter, although the limited surveillance volume for the non-transponder equipped aircraft meant alerts tended to occur later and therefore were more difficult to resolve.

loss of well clear