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Results for “wurtzite semiconductors”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Park, Yeonjoon↗
NASA NTRS2017

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Park, Yeonjoon↗
NASA NTRS2003

Transport Equations for CAD Modeling of Al(x)Ga(1-x)N/GaN HEMTs

BEMTs formed from Al(x)Ga(1-x)N/GaN heterostructures are being investigated for high RF power and efficiency around the world by many groups, both academic and industrial. In these devices, the 2DEG formation is dominated by both spontaneous and piezoelectric polarization fields, with each component having nearly the same order of magnitude. The piezoelectric portion is induced by the mechanical strain in the structure, and to analyze these devices, one must incorporate the stress/strain relationships, along with the standard semiconductor transport equations. These equations for Wurtzite GaN are not easily found in the open literature, hence this paper summarizes them, along with the constitutive equations for piezoelectric materials. The equations are cast into the format for the Wurtzite crystal class, which is the most common way GaN is grown epitaxially.

Freeman, Jon C.↗