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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

X-ray photoemission studies of superficially oxidized cesium antimonide photoemitters

Superficially oxidized cesium antimonide photoemitting surfaces prepared in ultrahigh vacuum were studied by X-ray photoelectron spectroscopy. Oxidation of Cs3Sb to produce a surface with enhanced photosensitivity converts part of the antimony to elemental antimony and part of the cesium to cesium suboxide. The latter is identified on the basis of an O1 s peak at 531.3 eV, characteristic of Cs11O3. The production of Cs2O is not ruled out in this process since its signature at 527.5 eV is masked by an antimony shake-up peak at 527 eV.

Bates, C. W., Jr.↗
NASA NTRS1984

The nature of chemisorbed oxygen on Ni(100) and Cu(100)

Model calculations indicate two low-lying states for the interaction of O with Ni and Cu(100). The oxide state is approximately 1 eV more stable and its R(perpendicular) for Ni(100) is consistent with the experimental value for Ni(100), indicating only one type of stable chemisorption bond. This agrees with XPS (X-ray photoemission spectroscopy) and EXAFS (extended X-ray absorption fine structure) data for the observed LEED (low energy electron diffraction) structures. Interpretations of EELS (electron energy loss spectroscopy) data in terms of a radical state forthe p(2x2) and the oxide state for the c(2x2) structure must be seriously questioned.

Bauschlicher, C. W., Jr.↗
NASA NTRS1978

Early stages of the oxidation of metal surfaces

Photoemission cross sections were calculated for the ZnO4(-6) cluster using the self consistent-chi alpha- scattered wave theory to display the main features of the ultraviolet and X-ray photoemission data from ZnO. A solid model is suggested for an absolute photoemission intensity comparison resulting in chi alpha intensities which are roughly 70% of the experimental values. Together with the experimental data, the calculations allow a complete determination of the electronic structure of a ZnO surface.

Gatos, H. C.↗
NASA NTRS1978

Lunar sample analysis

Flameless atomic abosrption, X-ray photoemission spectroscopy, ferromagnetic resonance, scanning electron microscopy, and Moessbauer spectroscopy were used to investigate the evolution of the lunar regolith, the transport of volatile trace metals, and the surface composition of lunar samples. The development of a model for lunar volcanic eruptions is also discussed.

Housley, R. M.↗
NASA NTRS1977

An XPS /ESCA/ study of lunar surface alteration profiles

We describe several important potential applications of surface analyses in planetology, and discuss some fundamental questions pertinent to the use of X-ray photoemission spectroscopy XPS or Auger electron spectroscopy AES to study complex powder samples. It appears that in addition to specific studies of surface chemistry, XPS may be able to provide useful major element analyses for all elements except hydrogen and perhaps helium and lithium. We provide data on the chemical changes associated with sputtering of a synthetic lunar glass. The surface is depleted in Si and enriched in Ca and Ti with Fe remaining nearly constant in parallel with changes observed during thermal volatilization. No Fe reduction was observed. Composition profiles obtained by sputtering 15301 fines suggest that surface alterations and reduced Fe are confined largely to depths of a few 100 A.

Housley, R. M.↗
NASA NTRS1979

Lunar sample analysis

The surface composition of two samples from the highly shocked, glass-coated lunar basalt (12054) and from four glass-coated fragments from the 1-2 mm (14161) fines were examined by X-ray photoemission spectroscopy to determine whether the agglutination process itself is responsible for the difference between their surface and bulk compositions. Auger electron spectroscopy of glass balls from the 15425 and 74001 fines were analyzed to understand the nature, extent, and behavior of volatile phases associated with lunar volcanism. Initial results indicate that (1) volatiles, in the outer few atomic layers sampled, vary considerably from ball to ball; (2) variability over the surface of individual balls is smaller; (3) the dominant volatiles on the balls are S and Zn; and (4) other volatiles commonly observed are P, Cl, and K.

Housley, R. M.↗
NASA NTRS1978

Studies of volatiles in Apollo 17 samples and their implication to vapor transport processes

Flameless atomic absorption (FLAA), X-ray photoemission spectroscopy (XPS) and grain size separation techniques were adopted to analyze Pb, Cd, Zn and S in orange and black droplets from Apollo 17 samples. The FLAA and XPS investigations show volatile trace metal enrichment in smaller grain fractions (broken droplets); thus a part of the volatiles was probably deposited after break-up of the droplets. In addition, redistribution of the volatiles by a cratering event is indicated by continuous decreases in Pb and Cd with core depth. Studies of Zn on individual regolith grains are also reported.

Cirlin, E. H.↗
NASA NTRS1979

XPS and SAM studies of the surface chemistry of lunar impact glasses including 12054

We report and discuss quantitative X-ray photoemission (XPS) analyses of mm size areas and qualitative scanning Auger microprobe (SAM) analyses of micron size areas on the surfaces of impact glass coatings found on fragments in the 14161 coarse fines and on the top surface, and a reentrant crack surface of rock 12054. The data suggest that some segregation occurs during impact glass formation leading to surface enrichments in Si and depletions in Mg, Al, Ca, and Ti. The magnitude of the effect appears fairly small, although the complexity of the surfaces severely complicates the data analysis. Because of the complexity of the surfaces, both XPS and SAM data were essential. A search for direct evidence of either solar wind sputter erosion or vapor deposition on the exposed top surface of 12054 provided interesting results which we cannot yet fully interpret. Both this surface and the surface from the re-entrant crack showed enrichments of more than a factor of two in Fe with respect to the bulk.

Housley, R. M.↗
NASA NTRS1981

XPS study of interface formation of CVD SiO2 on InSb

The interfacial chemistry of CVD SiO2 films deposited on thin native oxides grown on InSb substrates is examined using X-ray photoemission spectroscopy (XPS) and a relatively benign chemical etching technique for depth profiling. An intensity analysis of XPS spectra is used to derive the compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system. Peak positions in these spectra are used to follow the change in substrate surface potential during the etch sequence, and to establish the chemical nature of the species formed during deposition and subsequent processing. Reaction of the substrate with oxygen resulted in an In-rich native oxide and 1-2 monolayers of excess elemental Sb at the native-oxide/substrate interface, incompletely oxidized silane reduced the native oxide, leaving less than 1 monolayer of elemental In at the SiO2/native oxide interface. Etch removal of this thin In-rich layer leads to a change in the substrate surface potential of 0.06 eV, corresponding to a net increase in positive charge. The results are consistent with simple thermodynamic considerations; they are also compared to previously reported studies of deposited dielectrics on III-V compound semiconductors.

Vasquez, R. P.↗
NASA NTRS1982

Chemical bonding and charge redistribution - Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems

Via a systematic study of the correlation between the core and valence level X-ray photoemission spectra, the nature of the chemical bonding and charge redistribution for bulk transition metal silicides has been examined. Particular emphasis is placed on Pt2Si and PtSi. It is observed that the strength of the metal (d)-silicon (p) interaction increases in the order Ni2Si, Pd2Si, Pt2Si. It is also observed that both the metal and silicon core lines shift to higher binding energy as the silicides are formed. The notion of charge redistribution for metallic bonds is invoked to explain these data.

Grunthaner, P. J.↗
NASA NTRS1983

An XPS study of silicon/noble metal interfaces - Bonding trends and correlations with the Schottky barrier heights

This X-ray photoemission (XPS) study demonstrates a correlation of intrinsic TM-Si chemical bond formation with Schottky barrier heights for the near-noble transition metals (TM = Ni, Pd, Pt) and their corresponding silicides (TM2Si and TMSi) on Si(100). It is found that the barrier height correlates with the strength of the TM-Si orbital interaction as well as with the charge density around the Si atom. These observations suggest a dominant role for intrinsic chemical interactions in establishing the Schottky barrier heights in these TM-Si systems.

Grunthaner, P. J.↗
NASA NTRS1983

Cleaning chemistry of GaAs(100) and InSb(100) substrates for molecular beam epitaxy

Ploog (1980) and Bachrach and Krusor (1981) have pointed out the importance of substrate preparation and surface cleaning for obtaining high quality films with the aid of molecular beam epitaxial growth techniques. In the present investigation, high resolution X-ray photoemission (XPS) is used to determine the oxide removal mechanism for GaAs(100) substrates which have undergone a standardized cleaning procedure. Other objectives of the investigation are related to a comparison of different cleaning procedures in order to minimize carbon contamination, the extension of these cleaning techniques to other III-V compound semiconductors such as InSb, and the evaluation of the sensitivity of the compositional results to electron-induced damage effects.

Vasquez, R. P.↗
NASA NTRS1984

Electronic and chemical structure of metal-silicon interfaces

This paper reviews our current understanding of the near-noble metal silicides and the interfaces formed with Si(100). Using X-ray photoemission spectroscopy, we compare the chemical composition and electronic structure of the room temperature metal-silicon and reacted silicide-silicon interfaces. The relationship between the interfacial chemistry and the Schottky barrier heights for this class of metals on silicon is explored.

Grunthaner, P. J.↗
NASA NTRS1985

Photoenhanced thermal oxidation of InP

The growth rate of laser-photoenhanced thermally grown native oxides of InP in a N2O ambient and its dependence on growth condition are presented. Increased laser power, substrate temperature, and N2O pressure are observed to increase the growth rate. The topography and the composition of these oxides have been studied using secondary electron microscopy and X-ray photoemission spectroscopy, respectively. The oxide layers contain In2O3 and a phosphate, probably InPO4. The enhanced growth appears to be caused by both excited oxidizing species and a photon-enhanced surface reaction.

Fathipour, M.↗
NASA NTRS1985

Chemistry of MOS-LSI radiation hardening

The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.

Grunthaner, P.↗
NASA NTRS1983

A theoretical model study of observed correlations between whistler mode waves and energetic electron precipitation events in the magnetosphere

A recently extended test particle computer model of the gyroresonance wave-particle interaction in the magnetosphere is applied to previously reported cases of observed correlations between whistler mode waves and ionospheric responses to particle precipitation. Three different ionospheric effects, namely, X-ray bursts, photoemissions, and D region perturbations, all correlated with VLF waves and believed to be caused by precipitated particles, are considered. The precipitation flux level, the pulse shape, and the associated time delays are computed for the parameters relevant to each case and are compared with values deduced from the data. The results demonstrate that the existing theoretical model can be useful for interpreting experimental results of this kind. Furthermore, the model results and observations, used together, provide a basis for additional diagnostics of the various parameters of the cold and energetic particle distributions in the magnetosphere. For example, when applied to the observed photoemission case (Helliwell et al., 1980) the model results imply that the trapped energetic particle distribution function at the time could be modeled as proportional to E exp -n/2 with n about 3.5 to 6, where E is the particle energy.

Chang, H. C.↗
NASA NTRS1972

A Monte Carlo photocurrent/photoemission computer program

A Monte Carlo computer program was developed for the computation of photocurrents and photoemission in gamma (X-ray)-irradiated materials. The program was used for computation of radiation-induced surface currents on space vehicles and the computation of radiation-induced space charge environments within space vehicles.

Chadsey, W. L.↗
NASA NTRS1985

High speed photography, videography, and photonics III; Proceedings of the Meeting, San Diego, CA, August 22, 23, 1985

Papers are presented on the picosecond electronic framing camera, photogrammetric techniques using high-speed cineradiography, picosecond semiconductor lasers for characterizing high-speed image shutters, the measurement of dynamic strain by high-speed moire photography, the fast framing camera with independent frame adjustments, design considerations for a data recording system, and nanosecond optical shutters. Consideration is given to boundary-layer transition detectors, holographic imaging, laser holographic interferometry in wind tunnels, heterodyne holographic interferometry, a multispectral video imaging and analysis system, a gated intensified camera, a charge-injection-device profile camera, a gated silicon-intensified-target streak tube and nanosecond-gated photoemissive shutter tubes. Topics discussed include high time-space resolved photography of lasers, time-resolved X-ray spectrographic instrumentation for laser studies, a time-resolving X-ray spectrometer, a femtosecond streak camera, streak tubes and cameras, and a short pulse X-ray diagnostic development facility.

Ponseggi, B. G.↗