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At least 19 records

Low-Resistivity Zinc Selenide for Heterojunctions

Magnetron reactive sputtering enables doping of this semiconductor. Proposed method of reactive sputtering combined with doping shows potential for yielding low-resistivity zinc selenide films. Zinc selenide attractive material for forming heterojunctions with other semiconductor compounds as zinc phosphide, cadmium telluride, and gallium arsenide. Semiconductor junctions promising for future optoelectronic devices, including solar cells and electroluminescent displays. Resistivities of zinc selenide layers deposited by evaporation or chemical vapor deposition too high to form practical heterojunctions.

Stirn, R. J.↗

Study of CO2 sorbents for extravehicular activity

Portable life support equipment was studied for meeting the requirements of extravehicular activities. Previous studies indicate that the most promising method for performing the CO2 removal function removal function were metallic oxides and/or metallic hydroxides. Mgo, Ag2, and Zno metallic oxides and Mg(OH)2 and Zn(OH)2 metallic hydroxides were studied, by measuring sorption and regeneration properties of each material. The hydroxides of Mg and Zn were not regenerable and the zinc oxide compounds showed no stable form. A silver oxide formulation was developed which rapidly absorbs approximately 95% of its 0.19 Kg CO2 Kg oxide and has shown no sorption or structural degeneration through 22 regenerations. It is recommended that the basic formula be further developed and tested in large-scale beds under simulated conditions.

Colombo, G. V.↗

Synthesis and Optimization of Thermoelectric Properties of Zn(x)Sb3

High-performance thermoelectric materials are studied to investigate their abilities to optimize electrical and minimize thermal conductivities. A stoichiometric range of p-type zinc antimonide compounds was synthesized to analyze the trends in their thermoelectric properties. Zn(x)Sb3 (x=3.80, 3.85, 3.90, 3.95, 4.00, 4.05, 4.10) was reacted at 750 C and annealed at 300 C for 24 hours at each temperature. Electronic transport properties such as Seebeck and Hall Effect were measured to analyze possible trends in the set of compositions. SEM, EDS, and XRD were used to quantify both ingots and hot-pressed samples to confirm that they were single-phase and of the expected stoichiometries. Recent SEM data indicated that Zn(3.90)Sb3 and Zn(4.00)Sb3 samples were actually Zn3Sb2. In hopes of further improving the figure-of-merit (ZT) of the binary system, V, Cr, Mn, Fe, Co, In, and Sn were used to dope (Zn(0.95)M(0.05))(3.95)Sb3.

Doan-Nguyen, Vicky V.↗

Experiment 1: Orbital Processing of High-Quality Zn-Alloyed CdTe Compound Semiconductors

Zinc-alloyed cadmium telluride (Zn:CdTe) crystals were grown in unit gravity and in microgravity for comparative analysis. Two crystals were grown on USML-1/STS-50 in 1992, and two additional crystals were grown on USML-2/STS-73 in 1995. The Crystal Growth Furnace (CGF) in the seeded Bridgman-Stockbarger crystal growth geometry was utilized on both missions. Crystals grown on USML-1/STS-50 were found to have solidified with partial wall contact due to the near-absence of the hydrostatic pressure in microgravity, a residual g-vector that was not axial, and the nonwetting sample/ampoule wetting conditions. Crystals grown on USML-2/STS-73 included: a sample/ampoule identical to the USML-1/STS-73 sample/ampoule, with the addition of a restraining spring to simulate hydrostatic pressure internally, and a tapered ampoule which accomplished 2.2 cm of crystal growth without wall contact. Infrared transmission of all ground and flight samples was found to be 63-66 percent, very close to the theoretical 66 percent, suggesting good stoichiometric control. Infrared microscopy confirmed that the primary precipitates were Te and their size (1-10 microns) and density suggested that the flight- and ground-base samples experienced similar thermal histories. Longitudinal macrosegregation, calculated using scaling analysis, was predicted to be low. Nearly diffusion controlled growth was achieved even in unit gravity and macrosegregation data could be fit with a diffusion controlled model. Radial segregation was monitored and was found to vary with fraction solidified, particularly through the shoulder region, where the sample cross section was varying significantly. It was also disturbed in the flight samples in regions where asymmetric wall contact was noted. In regions where a steady state was established, the radial segregation was invariant within our experimental measurement error. Flight samples were found to be much higher in structural perfection than samples processed in unit gravity under identical growth conditions. In regions where solidification had occurred without wall contact, the free surfaces evidenced virtually no twinning, although twins appeared in the flight samples in regions of wall contact and were pervasive in the ground samples. These results were confirmed using optical microscopy and synchrotron x-ray white beam topography. Full-width half-maximum rocking curve widths (FWHM), recorded in arc-seconds, were significantly reduced from 20 a-s (1 g) to 9 a-s (micro-g) for the best regions of the crystals. The 9 a-s (FWHM) rocking curve value in the unconfined flight samples equals the best value reported terrestrially for this material. The ground samples exhibited a fully developed (111)[110] dislocation mosaic structure, whereas dislocations within the flight samples were discrete and no mosaic structure was evident. The defect density was quantitatively reduced from 75,000 (1 g) to 800 (micro-g) +/-50 percent. Dislocation etch pit density results were confirmed using transmission synchrotron white beam and monochromated beam topography. The low defect density is thought to have resulted from the near absence of hydrostatic pressure, which allowed the molten boule to solidify with little or no wall contact. This minimized the transfer of hoop stresses during solidification and post-solidification processing.

Larson, D. J., Jr.↗

Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices

A high conductivity, n-doped semiconductor film is produced from zinc, or Zn and Cd, and group VI elements selected from Se, S and Te in a reactive magnetron sputtering system having a chamber with one or two targets, a substrate holder, means for heating the substrate holder, and an electric field for ionizing gases in the chamber. Zinc or a compound of Zn and Cd is placed in the position of one of the two targets and doping material in the position of the other of the two targets. Zn and Cd may be placed in separate targets while a dopant is placed in the third target. Another possibility is to place an alloy of Zn and dopant, or Zn, Cd and dopant in one target, thus using only one target. A flow of the inert gas is ionized and directed toward said targets, while a flow of a reactant gas consisting of hydrides of the group VI elements is directed toward a substrate on the holder. The targets are biased to attract negatively ionized inert gas. The desired stochiometry for high conductivity is achieved by controlling the temperature of the substrate, and partial pressures of the gases, and the target power and total pressure of the gases in the chamber.

Stirn, Richard J.↗

Monotectic and syntectic alloys: ASTP experiment MA-044

A postflight preliminary technical evaluation is presented of the returned samples of aluminum antimonide (AlSb) syntectic compound and lead-zinc (PbZn) monotectic immiscible processed during the Apollo-Soyuz Test Project (ASTP) mission. The returned cartridges, extracted ampoules, and removed samples were examined in detail. A genesis of the experiment is given along with a summary of the efforts and various scheduled tests up to the ASTP mission. A tentative characterization plan is developed from the postflight preliminary examination which makes use of the limited number of available samples and is based on the initial observations. It is indicated that a higher degree of compositional homogeneity in aluminum antimonide was achieved under flight test conditions.

Ang, C. Y.↗

Bulk Growth of 2-6 Crystals in the Microgravity Environment of USML-1

The first United States Microgravity Laboratory Mission (USML- 1) flew in June 1992 on the Space Shuttle Columbia. An important part of this SpaceLab mission was the debut of the Crystal Growth Furnace (CGF). Of the seven samples grown in the furnace, three were bulk grown 2-6 compounds, two of a cadmium zinc telluride alloy, and one of a mercury zinc telluride alloy. Ground based results are presented, together with the results of computer simulated growths of these experimental conditions. Preliminary characterization results for the three USML-1 growth runs are also presented and the flight sample characteristics are compared to the equivalent ground truth samples. Of particular interest are the effect of the containment vessel on surface features, and especially on the nucleation, and the effect of the gravity vector on radial and axial compositional variations and stress and defect levels.

Gillies, Donald C.↗

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Park, Yeonjoon↗

Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure

An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

Park, Yeonjoon↗

Friction and Wear Modifiers Using Solvent Partitioning of Hydrophilic Surface-interactive Chemicals Contained in Boundary Layer-targeted Emulsions

A wear and/or friction reducing additive for a lubricating fluid in which the additive is a combination of a moderately hydrophilic single-phase compound and an anti-wear and/or anti-friction aqueous salt solution. The aqueous salt solution produces a coating on boundary layer surfaces. The lubricating fluid can be an emulsion-free hydrophobic oil, hydraulic fluid, antifreeze, or water. Preferably, the moderately hydrophilic single-phase compound is sulfonated castor oil and the aqueous salt solution additionally contains boric acid and zinc oxide. The emulsions produced by the aqueous salt solutions, the moderately hydrophilic single-phase compounds, or the combination thereof provide targeted boundary layer organizers that significantly enhance the anti-wear and/or anti-friction properties of the base lubricant by decreasing wear and/or friction of sliding and/or rolling surfaces at boundary layers.

Richmond, Robert Chafee↗

Friction and Wear Modifiers Using Solvent Partitioning of Hydrophilic Surface-Interactive Chemicals Contained in Boundary Layer-Targeted Emulsions

A wear and/or friction reducing additive for a lubricating fluid in which the additive is a combination of a moderately hydrophilic single-phase compound and an anti-wear and/or anti-friction aqueous salt solution. The aqueous salt solution produces a coating on boundary layer surfaces. The lubricating fluid can be an emulsion-free hydrophobic oil, hydraulic fluid, antifreeze, or water. Preferably, the moderately hydrophilic single-phase compound is sulfonated castor oil and the aqueous salt solution additionally contains boric acid and zinc oxide. The emulsions produced by the aqueous salt solutions, the moderately hydrophilic single-phase compounds, or the combination thereof provide targeted boundary layer organizers that significantly enhance the anti-wear and/or anti-friction properties of the base lubricant by decreasing wear and/or friction of sliding and/or rolling surfaces at boundary layers.

Richmond, Robert Chaffee↗

Friction and Wear Modifiers Using Solvent Partitioning of Hydrophilic Surface-Interactive Chemicals Contained in Boundary Layer-Targeted Emulsions

A wear and/or friction reducing additive for a lubricating fluid in which the additive is a combination of a moderately hydrophilic single-phase compound and an anti-wear and/or anti-friction aqueous salt solution. The aqueous salt solution produces a coating on boundary layer surfaces. The lubricating fluid can be an emulsion-free hydrophobic oil, hydraulic fluid, antifreeze, water, or a water-based lubricant. Preferably, the moderately hydrophilic single-phase compound is sulfonated castor oil and the aqueous salt solution additionally contains boric acid and zinc oxide. The emulsions produced by the aqueous salt solutions, the moderately hydrophilic single-phase compounds, or the combination thereof provide targeted boundary layer organizers that significantly enhance the anti-wear and/or anti-friction properties of the base lubricant by decreasing wear and/or friction of sliding and/or rolling surfaces at boundary layers.

Richmond, Robert Chaffee↗

Galvanic Liquid Applied Coating System for Protection of Embedded Steel Surfaces from Corrosion

The corrosion of reinforcing steel in concrete is an insidious problem for the Kennedy Space Center, government agencies, and the general public. Existing corrosion protection systems on the market are costly, complex, and time-consuming to install, require continuous maintenance and monitoring, and require specialized skills for installation. NASA's galvanic liquid-applied coating offers companies the ability to conveniently protect embedded steel rebar surfaces from corrosion. Liquid-applied inorganic galvanic coating contains one ore more of the following metallic particles: magnesium, zinc, or indium and may contain moisture attracting compounds that facilitate the protection process. The coating is applied to the outer surface of reinforced concrete so that electrical current is established between metallic particles and surfaces of embedded steel rebar; and electric (ionic) current is responsible for providing the necessary cathodic protection for embedded rebar surfaces.

Curran, Joseph↗

TPSAS-NF1676L-16388-DND

The 60° rotated twin defect on {111} planes is one of the most common crystal structure defects in the cubic semiconductors. This defect has a sigma-3 grain boundary commonly called the sigma-3 twin defect on {111} plane. Sigma-3 twin defects are also frequently found in the group IV semiconductors (Si, Ge, C) in a diamond structure and other cubic zinc blende III-V and II-VI compound semiconductors such as GaP, InP, InGaAs, CdTd and ZnSe.

Yeonjoon Park↗

Experimental Studies on Mass Transport of Cadmium-Zinc Telluride by Physical Vapor Transport

Experimental studies on mass transport of ternary compound, Cd(1-x)Zn(x)Te by physical vapor transport (PVT) for source compositions up to X = 0.21 are presented. The effect of thermochemical (temperatures, vapor composition) and other factors (preparation of the source, crystal growth rate, temperature gradient) on composition and composition profiles of the grown crystals were investigated. A steep decrease in the mass flux with an increase in X(crystal) for X less than 0.1, and a difference in composition between the source and the deposited material have been observed. The composition profiles of the crystals were found to depend on the density and pretreatment of the source, and on the temperature gradient in the source zone. The homogeneity of the crystals improves at low undercoolings and/or when an appropriate excess of metal constituents is present in the vapor phase. The experimental results are in good agreement with our thermochemical model of this system.

Palosz, W.↗