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Alberi, Kirstin

Publications and source records attributed to Alberi, Kirstin.

Tutorial: Defects in topological semimetals

Three-dimensional topological semimetals are a class of electronic materials in which their bulk and surface states contain linear band touching nodes near the Fermi level. Like semiconductors, their properties will be affected by point and extended defects in their crystal structures, although the extent to which defects and disorders influence topological semimetals may differ in key ways due to their unique electronic structures. In this Tutorial, we provide an overview of the defects in topological semimetals, covering both computational and experimental methods for exploring defect-property relationships. We also include a discussion on open questions that still need to be explored further.

36 MATERIALS SCIENCE

Celebrating Notable Advances in Compound Semiconductors: A Tribute to Dr. Wladyslaw Walukiewicz

The Special Topic "Native Defects, Impurities and the Electronic Structure of Compound Semiconductors" is dedicated to Dr. Wladyslaw (Wladek) Walukiewicz, our esteemed colleague who passed away on November 9, 2022, at age 76. It is not often that a scientist is able to profoundly impact more than one to two scientific topics in their lifetime. Dr. Walukiewicz, a condensed matter theorist by training, arguably did that for at least four. While his scientific accomplishments tell the story of a successful career and valuable contributions, it does not convey the entire story. For the rest, one has only to look at the community of researchers he brought together across the globe. Dr. Walukiewicz conducted his work with curiosity, integrity, and respect for others that elevated those around him. Here, we pay tribute to Dr. Walukiewicz's ideas and the legacy he leaves behind.

defects

Room-temperature spin injection across a chiral perovskite/III–V interface

Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of optoelectronic functionality. Current efforts are limited owing to inherent inefficiencies associated with spin injection across semiconductor interfaces. Here we demonstrate spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a standard semiconductor III-V (Al x Ga 1-x ) 0.5 In 0.5 P multiple quantum well light-emitting diode. The spin accumulation in the multiple quantum well is detected through emission of circularly polarized light with a degree of polarization of up to 15 ± 4%. The chiral perovskite/III-V interface was characterized with X-ray photoelectron spectroscopy, cross-sectional scanning Kelvin probe force microscopy and cross-sectional transmission electron microscopy imaging, showing a clean semiconductor/semiconductor interface at which the Fermi level can equilibrate. Finally, these findings demonstrate that chiral perovskite semiconductors can transform well-developed semiconductor platforms into ones that can also control spin.

14 SOLAR ENERGY