Probing charge trapping of high k dielectric stacks under ionizing radiation
Presentation for Rio Grande Symposium on Advanced Materials on Ocotber 21st
Engineering topics
Publications and source records attributed to Allemang, Christopher Richard.
Presentation for Rio Grande Symposium on Advanced Materials on Ocotber 21st
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This project’s goal was to explore new methods and tools to evaluate the focused ion beam (FIB) effect on active electrical devices, which is becoming increasingly challenged by the continual decrease in transistor geometry. Novel hole transfer methods leveraging FIB patterning were demonstrated utilizing selective area atomic layer deposition (ALD) and metal assisted chemical etching. A FIB damage electrical tester device was fabricated, and the effects of FIB beams were characterized by examining change in performance of damaged transistors. Detailed characterization of end-of-range damage for common FIB ions were correlated to modeling methods. Finally, undamaged and damaged devices were simulated by Charon to begin understanding the FIB effects on active devices. This test platform along with modeling methods give a powerful way to assess FIB damage in materials and devices, and with more development can help establish methods to predict FIB damage effects on electrical devices.
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Presentation for NMSU Postdoctoral Symposium, Sept 20th, based on ExEx work
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