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Andrews, R. N.

Publications and source records attributed to Andrews, R. N..

7 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Crystal growth of selected II-VI semiconducting alloys by directional solidification

A Hg(0.84)Zn(0.16)Te alloy crystal was back-melted and partially resolidified during the first United States Microgravity Laboratory (USML-1) mission in the Marshall Space Flight Center's Crystal Growth Furnace. The experiment was inadvertently terminated at about 30% of planned completion. Nonetheless, it was successfully demonstrated that HgZnTe alloy ingots partially grown and quenched on the ground can be back-melted and regrown in space under nearly steady state growth conditions. An identical 'ground-truth' experiment was performed following the mission. Preliminary results are presented for both crystals, as well as for a series of other crystals grown prior to the mission for the purposes of optimizing in-flight growth conditions.

Lehoczky, Sandor L.↗
NASA NTRS1991

Characterization of directionally solidified Hg(1-x)Zn(x)Se semiconducting alloys

Hg(1-x)Zn(x)Se alloys with composition between x = 0.08 and 0.115 were synthesized from elemental constituents and were resolidified using a Bridgman-Stockbarger growth technique. By performing precision mass-density measurements on selected wafers cut perpendicular to the growth axis, it was shown that the axial compositional profiles fit a numerical solution to the 1D diffusion equation which takes into account the variation of interface velocity with time. Infrared transmission-edge measurements performed on selected transverse slices from each ingot showed that the relative radial variations in composition decreased with decreasing growth rate. Van der Pauw measurements on selected wafers showed that the 10 exp 18/cu cm electron concentration, typical of as-grown crystals, could be reduced by approximately an order of magnitude by annealing in Se vapor.

Cobb, S. D.↗
NASA NTRS1990

Microhardness variations in II-VI semiconducting compounds as a function of composition

A comparison is made of microhardness variations as a function of composition in directionally solidified alloys of Hg(1-x)Cd(x)Te, Hg(1-x)Zn(x)Te, Hg(1-x)Cd(x)Se, and Hg(1-x)Zn(x)Se, using the same growth method for all four systems in order to eliminate preparation-induced mechanical property variations. In each case, compositional analysis was performed next to a microhardness indentation. Due to the 14-percent shorter bond length of ZnTe relative to HgTe, Zn-base alloy mechanical strength should exceed that of Cd-base systems. Experimental verification is furnished for this hardening effect in both Hg(1-x)Zn(x)Te and Hg(1-x)Zn(x)Se.

Andrews, R. N.↗
NASA NTRS1988

Growth and characterization of Hg(1-x)Cd(x)Se alloys

A detailed evaluation of the influence of growth conditions on the radial and axial compositional variations in directionally solidified Hg(1-x)Cd(x)Se alloys was performed. The measured axial compositional profiles were fitted to theoretical profiles to determine the effective solute (CdSe) diffusion coefficient (D) for the Hg(1-x)Cd(x)Se system. The value for D was estimated to be 3.0 + or - 0.5 x 10 to the -5th sq cm/s and did not appear to be significantly affected by the rate of crystal growth. The axial crystal uniformity was shown to be highly growth-rate dependent, with the faster growth rates producing crystals of more uniform composition in the axial direction. The magnitude of the radial variations was also shown to be highly growth-rate dependent, with the slower growth rates producing crystals of greater radial uniformity. This translation rate dependence of the radial uniformity is discussed in terms of lateral solute diffusion and convective interfacial fluid flows.

Andrews, R. N.↗
NASA NTRS1988

Internal temperature gradient of alloy semiconductor melts from interrupted growth experiments

Interrupted growth experiments on Hg(0.8)Cd(0.2)Se alloys were performed in an attempt to estimate the actual internal temperature gradient in the melt during directional solidification. The results have been analyzed in terms of a theoretical model which assumes an axial composition profile characteristic of diffusion controlled solute redistribution during growth. A comparison of the calculated and measured values suggests a reduction in the applied (empty furnace) temperature gradient by about a factor of three. Values of the interface segregation coefficient (k) determined from the phase diagram, predict values of solute concentration build up in the solid during growth interruptions which are inconsistent with measured results. It appears that the k values used tend to underestimate the actual k values for higher alloy compositions and overestimate k for the lower alloy compositions.

Andrews, R. N.↗
NASA NTRS1986

Growth and characterization of Hg(1-x)Zn(x)Se

Hg sub 1-xZn sub xSe alloys of composition x=0.10 were grown in a Bridgman-Stockbarger growth furnace at translation rates of 0.3 and 0.1 micron sec. The axial and radial composition profiles were determined using precision density measurements and IR transmission-edge-mapping, respectively. A more radially homogeneous alloy was produced at the slower growth rate, while the faster growth rate produced more axially homogeneous alloys. A determination of the electrical properties of the Hg sub 1-xZn sub xSe samples in the temperature range 300K-20K was also made. Typical carrier concentrations were on the order of magnitude of 10 to the 18th power cu/cm, and remained fairly constant as a function of temperature. A study was also made of the temperature dependence of the resistivity and Hall mobility. The effect of annealing in a selenium vapor on both the IR transmission and the electrical properties was determined. Annealing was effective in reducing the number of native donor defects and at the resulting lower carrier concentrations, charge carrier concentration was shown to be a function of temperature. Annealing caused the mobility to increase, primarily at the lower temperature, and the room temperature resistivity to increase. Annealing was also observed to greatly enhance the % IR transmittance of the samples. This was due primarily to the effect of annealing on decreasing the charge carrier concentration.

Andrews, R. N.↗