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Arafin, Shamsul

Publications and source records attributed to Arafin, Shamsul.

8 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Optical Properties of Low‐Defect Large‐Area Hexagonal Boron Nitride for Quantum Applications

Intrinsic defects and their concentrations in hexagonal boron nitride (h-BN) play a key role in single-photon emission. In this study, the optical properties of large-area multilayer h-BN-on-sapphire grown by metal-organic chemical vapor deposition are explored. Based on the detailed spectroscopic characterization using both cathodoluminescence (CL) and photoluminescence (PL) measurements, the material is devoid of random single-point defects instead of a few clustered complex defects. The emission spectra of the measurements confirm a record-low-defect concentration of ≈10 4 cm −2 . Post-annealing, no significant changes are observed in the measured spectra and the defect concentrations remain unaltered. Through CL and PL spectroscopy, an optically active boron vacancy spin defect is identified and a novel complex defect combination arising from carbon impurities is revealed. This complex defect, previously unreported, signifies a unique aspect of the material. In these findings, the understanding of defect-induced optical properties in h-BN films is contributed, providing insights for potential applications in quantum information science.

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DOE OSTI2023

Enhancement in electro-optic performance of InAlGaAs/GaAs quantum dot lasers by ex situ thermal annealing

Here, this Letter reports the growth, fabrication, and characterization of molecular beam epitaxy (MBE)-grown quaternary InAlGaAs/GaAs quantum dot (QD) lasers emitting at sub-900 nm. The presence of Al in QD-based active regions acts as the origin of defects and non-radiative recombination centers. Applying optimized thermal annealing annihilates the defects in p-i-n diodes, thus lowering the reverse leakage current by six orders of magnitude compared to as-grown devices. A systematic improvement in the optical properties of the devices is also observed in the laser devices with increasing annealing time. At an annealing temperature of 700°C for 180 s, Fabry–Pérot lasers exhibit a lower pulsed threshold current density at infinite length of 570 A/cm 2 .

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DOE OSTI2021

Low voltage drop tunnel junctions grown monolithically by MOCVD

Tunnel junction devices grown monolithically by metal organic chemical vapor deposition were optimized for minimization of the tunnel junction voltage drop. Here, two device structures were studied: an all-GaN homojunction tunnel junction and a graded InGaN heterojunction-based tunnel junction. This work reports a record-low voltage drop in the graded-InGaN heterojunction based tunnel junction device structure achieving a de-embedded tunnel junction voltage drop of 0.17 V at 100 A/cm 2 . The experimental data were compared with a theoretical model developed through technology computer-aided design (TCAD) simulations that offer a physics-based approach to understanding the key components of the design space, which lead to a more efficient tunnel junction.

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DOE OSTI2021

All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions

In this work, we carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and magnesium (Mg) buildup delay as well as experimentally demonstrate their influence on the electrical properties of GaN homojunction p–n diodes with a tunnel junction (TJ). The diodes were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in a single growth step. By optimizing the annealing parameters for Mg activation, δ-dose for both donors and acceptors at TJ interfaces, and p + -GaN layer thickness, a significant improvement in tunneling properties is achieved. For the TJs embedded within the continuously-grown, all-MOCVD GaN diode structures, ultra-low voltage penalties of 158 mV and 490 mV are obtained at current densities of 20 A cm –2 and 100 A cm –2 , respectively. The diodes with the engineered TJs show a record-low differential resistivity of 1.6 × 10 –4 Ω cm 2 at 5 kA cm –2 .

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DOE OSTI2020

Fully Transparent GaN Homojunction Tunnel Junction-Enabled Cascaded Blue LEDs.

A sidewall activation process was optimized for buried magnesium-doped p-GaN layers yielding a significant reduction in tunnel junction-enabled light emitting diode (LED) forward voltage. This buried activation enabled the realization of cascaded blue LEDs with fully transparent GaN homojunction tunnel junctions. The initial optimization of buried p-GaN activation was performed on PN junctions grown by metal organic chemical vapor deposition (MOCVD) buried under hybrid tunnel junctions grown by MOCVD and molecular beam epitaxy. Next the activation process was implemented in cascaded blue LEDs emitting at 450 nm, which were enabled by fully transparent GaN homojunction tunnel junctions. The tunnel junction-enabled multi-active region blue LEDs were grown monolithically by MOCVD. This work demonstrates a state-of-the-art tunnel junction-enabled cascaded LED utilizing homojunction tunnel junctions which do not contain any heterojunction interface.

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