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DOE OSTI · 1765752

Low voltage drop tunnel junctions grown monolithically by MOCVD

Jamal-Eddine, Zane·Hasan, Syed M. N.·Gunning, Brendan·Chandrasekar, Hareesh·Crawford, Mary·Armstrong, Andrew·Arafin, Shamsul·Rajan, Siddharth
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Abstract

Tunnel junction devices grown monolithically by metal organic chemical vapor deposition were optimized for minimization of the tunnel junction voltage drop. Here, two device structures were studied: an all-GaN homojunction tunnel junction and a graded InGaN heterojunction-based tunnel junction. This work reports a record-low voltage drop in the graded-InGaN heterojunction based tunnel junction device structure achieving a de-embedded tunnel junction voltage drop of 0.17 V at 100 A/cm 2 . The experimental data were compared with a theoretical model developed through technology computer-aided design (TCAD) simulations that offer a physics-based approach to understanding the key components of the design space, which lead to a more efficient tunnel junction.

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42 ENGINEERINGGaN homojunction tunnel junctionIII-Nitride tunnel junctionMOCVD tunnel junction growthTCAD modellinggallium nitridegraded InGaN tunnel junctionheterojunction tunnel junctiontunnel junctiontunnel junction optoelectronicstunnel junction simulation

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Jamal-Eddine, Zane, Hasan, Syed M. N., Gunning, Brendan, Chandrasekar, Hareesh, Crawford, Mary, Armstrong, Andrew, Arafin, Shamsul, Rajan, Siddharth. 2021-02-02. Low voltage drop tunnel junctions grown monolithically by MOCVD. https://doi.org/10.1063/5.0033554

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