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Aslam, S.

Publications and source records attributed to Aslam, S..

42 records · Page 3

l/f Noise in the Superconducting Transition of a MgB2 Thin Film

The noise voltage spectral density in the superconducting transition of a MgB2 thin film on a SiN-coated Si thick substrate was measured over the frequency range 1 Hz-to-1 KHz. Using established bolometer noise theory the theoretical noise components due to Johnson, 1/f(excess) and phonon noise are modeled to the measured data. It is shown that for the case of a MgB2 thin film in the vicinity of the mid-point of transition, coupled to a heat sink via a fairly high thermal conductance (approximately equal to 10(sup -1) W/K)) that the measured noise voltage spectrum is 1/f limited and exhibits lit dependence with a varying between 0.3 and 0.5 in the measured frequency range. At a video frame rate frequency of 30 Hz the measured noise voltage density in the film is approximately equal to 61 nV /the square root of HZ, using this value an upper limit of electrical NEP approximately equal to 0.67pW / the square root of Hz is implied for a practical MgB2 bolometer operating at 36.1 K.

Lakew, B.

Patterning Techniques for Magnesium Diboride Films for Superconducting Transition Edge Sensor Bolometer Arrays

We present a comparison of several patterning techniques for magnesium diboride films with the goal of making membrane-supported superconducting transition edge sensor bolometer arrays suited for far infrared exploration of outer planets and icy moons. We compare etch properties such as etch rate, selectivity to resist, and edge roughness for wet etching, reactive ion etching, and ion-milling processes.

Travers, D. E.

Dual Band Deep Ultraviolet AlGaN Photodetectors

We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

Aslam, S.

Fabrication of Monolithic Sapphire Membranes for High T(sub c) Bolometer Array Development

This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane single crystal sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to boiling H2SO4:H3PO4 etchant will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology (2) elemental concentration of the Pt/Cr thin film layers and (3) etch pit formation on the sapphire surface will be presented.

Pugel, D. E.

Fabrication of Monolithic Sapphire Membranes for High Tc Bolometer Array Development

This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to hot H2SO4:H3PO4 etchant, will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology and elemental concentration of the Pt/Cr thin film layers and (2) etch pit formation on the sapphire surface will be presented.

Pugel, D. E.