Ball, Dennis | Search NASA

DOE OSTI2024

Single-Event Effects in Heavy-Ion Irradiated 3-kV SiC Charge-Balanced Power Devices

Not provided.

Engineering↗

DOE OSTI2022

SRAM Multi-Cell Upset Vulnerability at the 5-nm FinFET Node.

Abstract not provided.

Pieper, Nicholas↗

DOE OSTI2021

Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.

42 ENGINEERING↗