Engineering topics

Barron, Andrew R.

Publications and source records attributed to Barron, Andrew R..

11 records

NASA NTRS1999

Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component

A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

Barron, Andrew R.↗

NASA NTRS1999

Thermal Protective Coating for High Temperature Polymer Composites

The central theme of this research is the application of carboxylate-alumoxane nanoparticles as precursors to thermally protective coatings for high temperature polymer composites. In addition, we will investigate the application of carboxylate-alumoxane nanoparticle as a component to polymer composites. The objective of this research was the high temperature protection of polymer composites via novel chemistry. The significance of this research is the development of a low cost and highly flexible synthetic methodology, with a compatible processing technique, for the fabrication of high temperature polymer composites. We proposed to accomplish this broad goal through the use of a class of ceramic precursor material, alumoxanes. Alumoxanes are nano-particles with a boehmite-like structure and an organic periphery. The technical goals of this program are to prepare and evaluate water soluble carboxylate-alumoxane for the preparation of ceramic coatings on polymer substrates. Our proposed approach is attractive since proof of concept has been demonstrated under the NRA 96-LeRC-1 Technology for Advanced High Temperature Gas Turbine Engines, HITEMP Program. For example, carbon and Kevlar(tm) fibers and matting have been successfully coated with ceramic thermally protective layers.

Barron, Andrew R.↗

NASA NTRS1996

CVD Of Thin Films From Single Organometallic Precursors

Method of forming thin inorganic films involves chemical vapor deposition (CVD) from single organometallic precursors. No toxic constituents, minimizes impurities, and yields films having substantially uniform crystal structure and composition. Especially suitable for depositing high-quality passivating or buffer layers of GaS on GaAs semiconductor substrates. Also applicable to formation of high-quality films for purposes other than buffering or passivation, and to different materials in which another element from same group in periodic table of elements substituted for all or portion of each element in GaS/GaAs system.

Hepp, Aloysius F.↗

NASA NTRS1994

Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

Macinnes, Andrew N.↗

NASA NTRS1994

Cubic GaS: A Surface Passivator For GaAs

Thin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.

Hepp, Aloysius F.↗

NASA NTRS1994

Room-temperature synthesis of CuInQ2 (Q = S or Se) in non-aqueous solution using an organoindium reagent

We have discovered a novel two-phase synthesis of CuInSe2 at 25 deg C from Cu2Se and (C5H5)3In in 4-methylpyridine (4-MePy). An analogous reaction to produce CuInS2 must be run at 140 deg C in refluxing 4-MePy in the presence of 2-mercaptopyridine. Microscopy of CuInSe2 produced at 25 deg C shows it to be platelet-shaped crystallites with an approximate particle size of 10 microns, less than 2 percent C and H, with a small amount of unidentified crystalline impurity. Our results demonstrate that it is possible to produce from solution a material that is ordinarily synthesized in bulk or films at much higher temperatures or using extraneous reagents and/or electrons.

Hepp, Aloysius F.↗

NASA NTRS1993

Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

Tabib-Azar, Massood↗

NASA NTRS1993

Synthesis of polycrystalline chalcopyrite semiconductors by microwave irradiation

Polycrystalline samples of the chalcopyrites CuInS2, CuInSe2, and CuInSSe were prepared from stoichiometric mixtures of the pure elements by microwave irradiation. The reactions were performed in sealed quartz tubes in as few as 3 minutes. The products were analyzed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, and X-ray photoelectron spectroscopy. The surface morphology and shape of the particles produced by this method suggest that the products are formed from liquid melts. This method could be applied to the production of bulk chalcopyrite as sources for thin film growth.

Landry, Christopher C.↗

NASA NTRS1993

Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster /(t-Bu)GaS/4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Macinnes, Andrew N.↗

NASA NTRS1993

Photoluminescence intensity enhancement of GaAs by vapor-deposited GaS - A rational approach to surface passivation

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster (/t-Bu/GaS)4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Jenkins, Phillip P.↗

NASA NTRS1992

Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

Macinnes, Andrew N.↗