NASA NTRS · 19950009173
Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD
Abstract
Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.
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Macinnes, Andrew N., Jenkins, Phillip P., Power, Michael B., Kang, Soon, Barron, Andrew R., Hepp, Aloysius F., Tabib-Azar, Massood. 1994-11-01. Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD. https://ntrs.nasa.gov/citations/19950009173
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