Engineering topics
Baxter, Jason B.
Publications and source records attributed to Baxter, Jason B..
Cross-Cutting Metrology Tools for In Operando Characterization of Carrier Dynamics in Photovoltaic Devices (Final Technical Report)
Understanding the nature of recombination and its dependence on defects and interfaces is essential for engineering materials and contacts for higher V oc and photovoltaic (PV) efficiency. Time-resolved photoluminescence (TRPL) has conventionally been used to evaluate recombination, but not all materials are strongly emissive or otherwise suitable. Time-resolved terahertz spectroscopy is a pump – probe method that presents valuable complementary information, wherein an optical pump pulse photoexcites carriers within the absorber and the transient photoconductivity is probed with a terahertz pulse. Until now, experimental constraints have prohibited the use of terahertz probes to interrogate full device stacks, and measurements were instead made on exfoliated films or films grown on unconventional substrates. However, interfaces are critical to the behavior of photoexcited carriers in solar cells, and the substrates themselves often influence the film growth and bulk properties. Therefore, it is important to probe the behavior of PV absorbers as close as possible to their normal operating conditions. Here we have developed cross-cutting metrology that enable in operando characterization of carrier dynamics and recombination mechanisms in working PV devices. Through a combination of complementary non-contact TRTS and TRPL experiments and modeling, we have obtained key parameters including photoexcited carrier bulk lifetime and interface and back surface recombination velocities with greater precision and accuracy than can be achieved with conventional TRPL alone. By varying pulsed photoexcitation conditions, the contributions of interface and bulk recombination mechanisms can be determined. We have developed and refined this characterization approach by investigating CdTe PVs, which is a well-established technology but with significant margin for further improvements in efficiency. Results were published in Journal of Applied Physics (DOI: 10.1063/5.0064730) and Proceedings of the IEEE PVSC (DOI: 10.1109/PVSC43889.2021.9518559). After validating the approach, we have applied it to correlate recombination rates to processing conditions and material properties, including composition and defects as well as interfaces and surface treatments. Such feedback can inform processing and design choices to enable higher PV efficiency, not only for CdTe, but also CdSe x Te 1-x , CIGS, perovskites, kesterites, and future technologies. A perspective on predicting solar cell performance from terahertz spectroscopy was published in Advanced Energy Materials (DOI: 10.1002/aenm.202102776). The cross-cutting metrology tools developed here will enable determination of the locus and mechanism of performance-limiting recombination in thin film PV devices. This feedback can guide the engineering of PV devices with higher V oc and efficiency, thereby leading to reductions in levelized cost of electricity to meet the SunShot 2030 target of $0.03/kWh for utility-scale PV. Lower costs will enable rapid expansion of renewable electricity generation that is nearly free of carbon emissions. Reducing carbon emissions of the electricity sector is one of the most important solutions to climate change. The project’s specific focus on CdTe PV can benefit First Solar, the US company that is the global leader in CdTe technology, through both technology and workforce development.
Predicting Solar Cell Performance from Terahertz and Microwave Spectroscopy
Abstract Mobilities and lifetimes of photogenerated charge carriers are core properties of photovoltaic materials and can both be characterized by contactless terahertz or microwave measurements. Here, the expertise from fifteen laboratories is combined to quantitatively model the current‐voltage characteristics of a solar cell from such measurements. To this end, the impact of measurement conditions, alternate interpretations, and experimental inter‐laboratory variations are discussed using a (Cs,FA,MA)Pb(I,Br) 3 halide perovskite thin‐film as a case study. At 1 sun equivalent excitation, neither transport nor recombination is significantly affected by exciton formation or trapping. Terahertz, microwave, and photoluminescence transients for the neat material yield consistent effective lifetimes implying a resistance‐free JV‐curve with a potential power conversion efficiency of 24.6 %. For grainsizes above ≈20 nm, intra‐grain charge transport is characterized by terahertz sum mobilities of ≈32 cm 2 V −1 s −1 . Drift‐diffusion simulations indicate that these intra‐grain mobilities can slightly reduce the fill factor of perovskite solar cells to 0.82, in accordance with the best‐realized devices in the literature. Beyond perovskites, this work can guide a highly predictive characterization of any emerging semiconductor for photovoltaic or photoelectrochemical energy conversion. A best practice for the interpretation of terahertz and microwave measurements on photovoltaic materials is presented.
Distinguishing bulk and surface recombination in CdTe thin films and solar cells using time-resolved terahertz and photoluminescence spectroscopies
Understanding the nature of recombination and its dependence on defects and interfaces is essential for engineering materials and contacts for higher open circuit voltage (V oc ) and power conversion efficiency in photovoltaic (PV) devices. Time-resolved photoluminescence (TRPL) has conventionally been used to evaluate recombination, but carrier redistribution often dominates the response at short times. In this work, we report on the quantification of carrier dynamics and recombination mechanisms by complementary use of both time-resolved terahertz spectroscopy (TRTS) and TRPL combined with numerical modeling of the continuity equations and Poisson’s equation. We have demonstrated this approach using CdTe thin films. A thin film stack with CdTe fabricated by vapor transport deposition and treated with CdCl 2 exhibited a bulk lifetime of 1.7 ± 0.1 ns, negligible CdTe/CdS interface recombination velocity, and back surface recombination velocity of 6.3 ± 1.3 x10 4 cm/s. In contrast, a film stack without CdCl 2 treatment had a bulk lifetime of only 68 ± 12 ps and a higher interface recombination velocity of 4 ± 2 x10 8 cm/s. By determining the locus and mechanisms of performance-limiting recombination, we can accelerate the development of thin-film PVs with higher V oc and efficiency. While the method has been demonstrated here using CdTe, it is also applicable to perovskites, Cu(InGa)Se 2 , Cu2ZnSn(S,Se) 4, and emerging technologies.
A Circularity Assessment for Silicon Solar Panels Based on Dynamic Material Flow Analysis: Preprint
Solar photovoltaics (PV) are the fastest growing renewable energy technology for clean, inexpensive, and sustainable electricity generation. Along with numerous technical roadmaps to improve system cost, performance and reliability, the PV industry should also plan to handle large volumes of silicon panel waste, which is initially estimated to be ~13 million metric tons (MT) by 2050 in the U.S. alone. Understanding the magnitude of material needs and how material flows throughout the PV panel life cycle could respond to design, operational and different end-of-life (EOL) circular pathways will help transition into a circular, resource-conserving economy. Herein, we introduce a dynamic material flow analysis (DMFA) framework based on electricity generation to quantify time-series stocks and flows of bulk PV materials (e.g., solar glass and aluminum frames) throughout the life cycles of utility-scale silicon PV systems in the U.S. in the period 2000-2100. We apply the model to a range of scenarios to understand how material demands depend on selected PV-related parameters, different material circularity strategies, and recent module design trends (e.g., bifacial, frameless). We found that float glass and aluminum in PV installations would likely reach 100 million MT and 12 million MT by 2100, respectively, in the baseline scenario. The most influential parameters for PV installation and subsequent waste reduction are found to be module lifetime, module efficiency, annual degradation, and material reduction. Module recycling and component remanufacturing were found to be the most effective material circularity strategies for waste minimization. Panel reuse has negligible savings on waste under current module efficiencies compared to replacements with newer generations with higher efficiency. Ongoing trends to produce larger power frameless modules could save 10 million MT of glass and ~9 million MT of aluminum. Our results enable advanced planning for future materials needs and provide insight into potential opportunities to minimize waste.
Quantifying Bulk and Surface Recombination in CdTe Solar Cells Using Time-Resolved Terahertz Spectroscopy
Understanding the nature of recombination mechanisms is essential for higher power conversion efficiency in photovoltaic (PV) devices. Here we use a combination of time-resolved terahertz spectroscopy and numerical modeling to determine the bulk Shockley-Read-Hall lifetime and interface and back surface recombination velocities in CdTe thin film stacks. Furthermore, the measurement was facilitated by fabricating wire-grid device structures using conventional laser scribing. Evaluation of a glass/FTO/SnO2/CdS/CdTe stack treated with CdCl2 allowed separation of the CdTe absorber bulk lifetime, 1.6 ns, from the back surface recombination velocity, ~6x10 4 cm/s, and indicated that CdTe/CdS interface recombination velocity had no significant impact on carrier dynamics.
A Circularity Assessment for Silicon Solar Panels Based on Dynamic Material Flow Analysis
This paper examines the impacts of design, operational, and end-of-life (EOL) waste pathways’ parameters on material circularity in silicon solar photovoltaic (PV) modules. Dynamic material flow analysis (DMFA) quantifies time-series material flows through systems’ life cycle stages to identify hotspots of waste generation, estimate resource needs in the future, and guide sustainable material management. We introduce a DMFA framework based on U.S. electricity demand for the period 2000-2100 to assess stocks and flows of bulk PV materials (i.e., solar glass and aluminum frames). We apply the model to a range of scenarios to understand how material demands depend on selected PV-related parameters, different material circularity strategies, and recent module design trends (e.g., bifacials, large-format-high power modules). Our results enable advanced planning for future materials needs and provide insight into potential opportunities to minimize material waste.
A Circularity Assessment for Silicon Solar Panels Based on Dynamic Material Flow Analysis
Solar photovoltaics (PV) are the fastest growing renewable energy technology for clean, inexpensive, and sustainable electricity generation. Along with numerous technical roadmaps to improve system cost, performance and reliability, the PV industry should also plan to handle large volumes of silicon panel waste, which is initially estimated to be ~13 million metric tons (MT) by 2050 in the U.S. alone. Understanding the magnitude of material needs and how material flows throughout the PV panel life cycle could respond to design, operational and different end-of-life (EOL) circular pathways will help transition into a circular, resource-conserving economy. Herein, we introduce a dynamic material flow analysis (DMFA) framework based on electricity generation to quantify time-series stocks and flows of bulk PV materials (e.g., solar glass and aluminum frames) throughout the life cycles of utility-scale silicon PV systems in the U.S. in the period 2000-2100. We apply the model to a range of scenarios to understand how material demands depend on selected PV-related parameters, different material circularity strategies, and recent module design trends (e.g., bifacial, frameless). We found that float glass and aluminum in PV installations would likely reach 100 million MT and 12 million MT by 2100, respectively, in the baseline scenario. The most influential parameters for PV installation and subsequent waste reduction are found to be module lifetime, module efficiency, annual degradation, and material reduction. Module recycling and component remanufacturing were found to be the most effective material circularity strategies for waste minimization. Panel reuse has negligible savings on waste under current module efficiencies compared to replacements with newer generations with higher efficiency. Ongoing trends to produce larger power frameless modules could save 10 million MT of glass and ~9 million MT of aluminum. Our results enable advanced planning for future materials needs and provide insight into potential opportunities to minimize waste.
Distinguishing Electron and Hole Dynamics in Functionalized CdSe/CdS Core/Shell Quantum Dots Using Complementary Ultrafast Spectroscopies and Kinetic Modeling
The evolution of excitation energy and photogenerated charges in semiconductor quantum dots (QDs) functionalized with molecular acceptors can be probed on ultrafast time scales using techniques such as transient absorption (TA) spectroscopy. However, historical interpretations that the 1S(e)-1S 3/2 (h) transition in Cd-chalcogenide QDs is fully attributable to electrons may be misleading, and multiexponential models used to fit TA kinetics do not correspond directly to specific photophysical processes. Here, we present visible-wavelength and mid-IR TA and time-resolved photoluminescence measurements to inform a comprehensive kinetic model of the photoexcited CdSe/CdS core/shell QDs functionalized with passivating oleic acid (OA), hole-accepting ferrocene, or electron-accepting naphthalene bisimide (NBI). We show that ~30% of the 1S signal and 72% of the IR signal can originate from holes in well-passivated core/shell QDs. We also demonstrate evidence of electron trapping in OA-capped core/shell QDs, with additional electron transfer and hole trapping in the QDs functionalized with NBI. Electron (hole) trapping and detrapping occur in 450 ± 100 ps (430 ± 70 ps) and 340 ± 100 ps (1.1 ± 0.4 ns) respectively, while the time constant for electron transfer to NBI is ~1.8 ns. The comprehensive picture of photophysical processes provided by the complementary ultrafast techniques and kinetic modeling can accelerate both the fundamental science and application development of nanostructured and molecular systems.
Nanosecond carrier lifetimes in solution-processed enargite (Cu 3 AsS 4 ) thin films
Enargite (ENG) Cu 3 AsS 4 is a promising material for photovoltaic applications due to its constituent earth abundant elements of differing ionic radii, ideal predicted optoelectronic properties, and demonstrated use in a working thin-film solar cell. However, little is known about ENG's defect properties; such knowledge is necessary to assess its potential for future use in high-efficiency devices. One indicator of a material's quality is its photogenerated carrier lifetime, which can be related to its bulk defect properties. Here, we use a combination of time-resolved terahertz spectroscopy and time-resolved photoluminescence to assess carrier dynamics in ENG thin films processed from nanoparticle precursors. The Shockley–Read–Hall (SRH) lifetimes are on the multi-nanosecond scale, which exceed those reported in more mature systems and represent promising values for a candidate photovoltaic material. These results suggest that ENG is worthy of further research and development effort with an eye toward future photovoltaic applications.