Engineering topics
Bell, L. Douglas
Publications and source records attributed to Bell, L. Douglas.
Functional Nanostructured Particle Arrays for Nanocrystal Nonvolatile Memories
This presentation outlines the performance characteristics of state-of-the-art nonvolatile memory devices and identifies charge storage mechanisms in nanocrystal floating gate materials.
Ballistic-electron-emission Microscopy of Semiconductor Heterostructures
Balistic-electron-emission microscopy has developed from its beginning as a probe of Schottky barriers into a powerful nanometer-scale method for characterizing semiconductor interfaces and hot-electron transport.
Using BEEM To Probe Strains In Semiconductors
Ballistic-electron-emission microscopy (BEEM) useful in determining strains in semiconductors under some conditions. More specifically, BEEM is variant of scanning tunneling microscopy and sensitive to electronic structure of probed material. In present approach, BEEM used to obtain data on those aspects of variations in electronic structures related to variations in strains. Then by use of mathematical modeling of relationships between electronic structures and strains, variations in strains deduced from BEEM data.
AIAs Diffusion/Schottky Barrier on GaAs
Ultrathin epitaxial film of AIAs deposited on GaAs substrate to serve as Schottky barrier and/or as barrier to diffusion. Deposited without interrupting processing vacuum in which substrate deposited and in which any subsequent layers deposited. In new technique, epitaxial film of AIAs deposited directly on GaAs substrate to depth of only two atomic layers - less than 1 nanometer thick. Film thin enough so it does not constitute electronic barrier, but thick enough to act as barrier to interdiffusion of gold and GaAs. Film also used as barrier to interdiffusion of dopants at heterojunctions.
Ballistic-Electron-Emission Microscope
Ballistic-electron-emission microscope (BEEM) employs scanning tunneling-microscopy (STM) methods for nondestructive, direct electrical investigation of buried interfaces, such as interface between semiconductor and thin metal film. In BEEM, there are at least three electrodes: emitting tip, biasing electrode, and collecting electrode, receiving current crossing interface under investigation. Signal-processing device amplifies electrode signals and converts them into form usable by computer. Produces spatial images of surface by scanning tip; in addition, provides high-resolution images of buried interface under investigation. Spectroscopic information extracted by measuring collecting-electrode current as function of one of interelectrode voltages.
Tunnel and field effect carrier ballistics
Methods and apparatus for interacting carriers with a structure of matter employ an electrode for emitting said carriers at a distance from a surface of that structure, and cause such carriers to travel along ballistic trajectories inside that structure by providing along the mentioned distance a gap for performance of a process selected from the group of carrier tunneling and field emission and injecting carriers emitted by the mentioned electrode and that process ballistically into the structure through the gap and the mentioned surface. The carriers are collected or analyzed after their travel along ballistic trajectories in the structure of matter. Pertinent information on the inside of the structure is obtained by conducting inside that structure what conventionally would have been considered external ballistics, while performing the carrier-propelling internal ballistics conversely outside that structure.