NASA NTRS · 19960021837
Using BEEM To Probe Strains In Semiconductors
Abstract
Ballistic-electron-emission microscopy (BEEM) useful in determining strains in semiconductors under some conditions. More specifically, BEEM is variant of scanning tunneling microscopy and sensitive to electronic structure of probed material. In present approach, BEEM used to obtain data on those aspects of variations in electronic structures related to variations in strains. Then by use of mathematical modeling of relationships between electronic structures and strains, variations in strains deduced from BEEM data.
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Bell, L. Douglas, Milliken, Autumn M., Manion, Stephen J., Kaiser, William J.. 1996-04-01. Using BEEM To Probe Strains In Semiconductors. https://ntrs.nasa.gov/citations/19960021837
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