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Biedermann, Laura B.

Publications and source records attributed to Biedermann, Laura B..

6 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Elastic wave suppression through additively manufactured petal lattice metamaterials

Lattice-core sandwich structure metamaterials are lightweight alternatives to monolithic materials that can present better mechanical, thermal, and energy dampening performance. Manufacturing lattice metamaterials to follow curved surfaces can pose a challenge, as the lattices rely on their geometric orientation to the substrate for their mechanical properties. This work rationally designed a lattice structure where the surface is broken up into “petals” connected to the underlying lattice, which localizes the petals’ impact response. This design opens a pathway for implementation of lattice-core sandwich structures onto complex surface geometries. These petal structures were evaluated for their energy absorption efficiency experimentally by utilizing pressure waves generated with nanosecond lasers and computationally via finite element modeling. The lattice structures exhibited a two-orders-of-magnitude decrease in transmitted pressure compared to their constituent steel at equivalent mass. Furthermore, localizing energy absorption into petal structures provided a 44% reduction in peak load compared to a continuous “single-petal” design.

Sarracino, Alex↗
DOE OSTI2023

Granular metals with SiN x dielectrics

Understanding and controlling nanoscale interface phenomena, such as band bending and secondary phase formation, is crucial for electronic device optimization. In granular metal (GM) studies, where metal nanoparticles are embedded in an insulating matrix, the importance of interface phenomena is frequently neglected. Here, we demonstrate that GMs can serve as an exemplar system for evaluating the role of secondary phases at interfaces through a combination of x-ray photoemission spectroscopy (XPS) and electrical transport studies. We investigated SiN x as an alternative to more commonly used oxide-insulators, as SiN x -based GMs may enable high temperature applications when paired with refractory metals. Comparing Co-SiN x and Mo-SiN x GMs, we found that, in the tunneling-dominated insulating regime, Mo-SiN x had reduced metal-silicide formation and orders-of-magnitude lower conductivity. XPS measurements indicate that metal-silicide and metal-nitride formation are mitigatable concerns in Mo-SiN x . Given the metal-oxide formation seen in other GMs, SiN x is an appealing alternative for metals that readily oxidize. Furthermore, SiN x provides a path to metal-nitride nanostructures, potentially useful for various applications in plasmonics, optics, and sensing.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Processing, structure, and thermal properties of ZrW 2 O 8 , HfW 2 O 8 , HfMgW 3 O 12 , Al(HfMg) 0.5 W 3 O 12 , and Al 0.5 Sc 1.5 W 3 O 12 negative and zero thermal expansion coefficient ceramics

Negative and zero coefficient of thermal expansion (CTE) materials are of interest for developing polymer composites in electronic circuits that match the expansion of Si and in zero CTE supports for optical components, e.g., mirrors. In this work, the processing challenges and stability of ZrW 2 O 8 , HfW 2 O 8 , HfMgW 3 O 12 , Al(HfMg) 0.5 W 3 O 12 , and Al 0.5 Sc 1.5 W 3 O 12 negative and zero thermal expansion coefficient ceramics are discussed. Al 0.5 Sc 1.5 W 3 O 12 is demonstrated to be a relatively simple oxide to fabricate in large quantity and is shown to exhibit single phase up to 1300 °C in air and inert N 2 environments. The negative and zero CTE behavior was confirmed with dilatometry. Thermal conductivity and heat capacity were reported for the first time for HfMgW 3 O 12 and Al 0.5 Sc 1.5 W 3 O 12 and thermal conductivity was found to be very low (~0.5 W/mK). Grüneisen parameter is also estimated. Methods for integration of Al 0.5 Sc 1.5 W 3 O 12 with other materials was examined and embedding 50 vol% of the ceramic powder in flexible epoxy was demonstrated with a commercial vendor.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The effect of metal–insulator interface interactions on electrical transport in granular metals

Here, we present an in-depth study of metal–insulator interfaces within granular metal (GM) films and correlate their interfacial interactions with structural and electrical transport properties. Nominally 100 nm thick GM films of Co and Mo dispersed within yttria-stabilized zirconia (YSZ), with volumetric metal fractions (φ) from 0.2–0.8, were grown by radio frequency co-sputtering from individual metal and YSZ targets. Scanning transmission electron microscopy and DC transport measurements find that the resulting metal islands are well-defined with 1.7–2.6 nm average diameters and percolation thresholds between φ = 0.4–0.5. The room temperature conductivities for the φ = 0.2 samples are several orders of magnitude larger than previously-reported for GMs. X-ray photoemission spectroscopy indicates both oxygen vacancy formation within the YSZ and band-bending at metal–insulator interfaces. The higher-than-predicted conductivity is largely attributed to these interface interactions. In agreement with recent theory, interactions that reduce the change in conductivity across the metal–insulator interface are seen to prevent sharp conductivity drops when the metal concentration decreases below the percolation threshold. These interface interactions help interpret the broad range of conductivities reported throughout the literature and can be used to tune the conductivities of future GMs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Encapsulant Void Breakdown Voltage Modeling & Experiments

For high voltage electrical devices, prevention of high voltage breakdown is critical for device function. Use of polymeric encapsulation such as epoxies is common, but these may include air bubbles or other voids of varying size. The present work aimed to model and experimentally determine the size dependence of breakdown voltage for voids in an epoxy matrix, as a step toward establishing size criteria for void screening. Effects were investigated experimentally for both one-dimensional metal/epoxy/air/epoxy/metal gap sizes from 50 μm to 10 mm, as well as spherical voids of 250 μm, 500 μm, 1 mm and 2 mm sizes. These experimental results were compared to modified Paschen curve and particle-in-cell discharge models; minimum breakdown voltages of 6 - 8.5 kV appeared to be predicted by 1D models and experiments, with minimum breakdown voltage for void sizes of 0.2 - 1 mm. In a limited set of 3D experiments on 250 μm, 500 μm, 1 mm and 2 mm voids within epoxy, the minimum breakdown voltages observed were 18.5 - 20 kV, for 500 μm void sizes. These experiments and models are aimed at providing initial size and voltage criteria for tolerable void sizes and expected discharge voltages to support design of encapsulated high voltage components.

42 ENGINEERING↗