DOE OSTI · 1596194
Carrier dynamics model for laser-solid interactions
Abstract
This report describes a model for the time development of carrier distributions within a metallic or semiconductor target after the onset of an incident laser pulse. The dynamics of electron and hole populations in momentum-resolved conduction- and valence-band states are treated at the level of carrier-carrier and carrier-phonon scattering. These scattering events result in plasma and lattice heating, which in turn lead to electron thermionic emission and tunneling, and target material ablation. A fairly phenomenological approach is taken to mitigate numerical computation demands, in order to facilitate parametric studies. Two examples of application are presented. One involve s the incident of an intense near-infrared laser pulse on a solid aluminum target, where the goal is to connect excited species emission to physics at a band-structure level. The second involves modeling the trigger mechanism in laser-triggered high-voltage switches, where the results are used as input to highly intensive particle-in-cell (PIC) plasma simulations of switch operation.
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Chow, Weng W., Moore, Christopher Hudson, Biedermann, Laura B., Hopkins, Matthew M., Dagel, Daryl, Cartwright, Keith. 2017-08-01. Carrier dynamics model for laser-solid interactions. https://doi.org/10.2172/1596194
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