Impact of surface pretreatment on Al2O3/GaN and HfO2/GaN band offsets measured by XPS
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Meyerson, Melissa Lynn↗
Engineering topics
Binder, Andrew
Publications and source records attributed to Binder, Andrew.
Silicon Carbide Research for Energy Efficiency and National Security
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Binder, Andrew↗
Reduction of Defects at or near ALD-Al2O3/GaN Interfaces for Improved Electrical Performance of GaN Power Devices
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Glaser, Caleb E↗
Component Testing, Co-Optimization, and Trade-Space Evaluation 2024
This poster is a presentation at the DOE EERE VTO AMR for 2024
Gill, Lee↗
XeF2 – A new MOCVD source for removal of surface Si contamination and in-situ etching of GaN for epitaxial regrowth
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Allerman, Andrew A.↗
High-Current (390 A) Large Area Vertical GaN PN Diodes with 1600 V Breakdown
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Yates, Luke↗
High-Current (390 A) Large Area Vertical GaN PN Diodes with 1600 V Breakdown
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Yates, Luke↗
Development of Medium-Voltage High-Current Vertical GaN Power Devices
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Yates, Luke↗
In-situ MOCVD Etching of GaN using XeF2 for Selective-Area-Epitaxial-Regrowth of p-type GaN for High Voltage PN Diodes
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Allerman, Andrew A.↗
Advanced Design Concepts for Vertical Gallium Nitride MOSFETs
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Binder, Andrew↗
Improving Electrical Performance of GaN-on-GaN MOS Devices Via Optimized Atomic Layer Deposition of Al2O3 Gate Dielectrics
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Glaser, Caleb E.↗
Demonstration of a Merged Pin Schottky in 30% AlGaN
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Allerman, Andrew A.↗
Progress in Medium-Voltage Vertical GaN Power Devices
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Kaplar, Robert↗
Design and Evaluation of Vertical GaN PN Diode Junction Termination Extensions in High Temperature Environments
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Yates, Luke↗
Ultra-Wide Bandgap AlGaN Alloys for Power Electronics (invited).
Abstract not provided.
Allerman, Andrew↗
Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique.
Abstract not provided.
Rummel, Brian↗
Ultra-wide Bandgap AlGaN Alloys for Power Diodes and Transistors (invited).
Abstract not provided.
Allerman, Andrew↗