DOE OSTI · 2430821
Improving Electrical Performance of GaN-on-GaN MOS Devices Via Optimized Atomic Layer Deposition of Al2O3 Gate Dielectrics
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Glaser, Caleb E., Rummel, Brian Douglas, Klesko, Joseph Peter, Dickens, Peter Thomas, Binder, Andrew, Kaplar, Robert, Feezell, Daniel. 2023-06-01. Improving Electrical Performance of GaN-on-GaN MOS Devices Via Optimized Atomic Layer Deposition of Al2O3 Gate Dielectrics. https://doi.org/10.2172/2430821
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